• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.470-475
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• 2009

We deposited $Al_2O_3$ thin films on GaN by remote plasma atomic layer deposition (RPALD) technique, trimethylaluminum(TMA) and oxygen were used as precursors, at fixed process condition, the number of cycle were changed. Growth rate per cycle was $1.2\;{\AA}$/cycle. and Growth rate was in proportion to a number of cycle, the GaN MIS capacitors that $Al_2O_3$ thin film were deposited above 12 nm, have excellent electrical properties, a low electrical leakage current density(${\sim}10^{-10}\;A/cm^2$ at 1.5 MV), but below 12 nm, we can see the degradation of the leakage current density. After post deposition annealing, Dielectric constant was estimated by 1 MHz high-frequency C-V method, it was varied with the anealing temperature from 6.9 at no post anealed to 7.6 at $800^{\circ}C$, and we can see a improvement of the leakage current density and breakdown voltage by post deposition anealing below $700^{\circ}C$, but, after anealed at $800^{\circ}C$, we can see the degradation of the leakage current density and breakdown voltage.

• Journal of Animal Reproduction and Biotechnology
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• v.36 no.4
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• pp.194-202
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• 2021

In this study the effect of vitamin C administration on pregnancy rates during summer heat stress in dairy cows was examined. A total of 80 Holstein-Friesian cows were divided into control and treatment groups (n = 40 each). Control group animals were given 10 mL isotonic normal saline, and treatment group, Vitamin C (4 mg/kg) on artificial insemination day (day 0) and 4^th, 8^th and 12^th day post insemination. Pregnancy diagnosis was performed on 30^th day post insemination by ultrasonography. Blood samples were randomly taken from 11 animals from each group. Serum P₄, GSH, MDA and plasma 8-OHdG levels were determined by using ELISA method. Results showed that 8-OHdG levels were lower in treatment group on day 4, 8 and 12 (p < 0.05) compared with the control group. Similarly, pregnancy rate was higher in treatment group (32.5%) than control (22.5%), respectively. However, MDA, P₄ and GSH levels were similar in both groups at 4^th, 8^th and 12^th day. A gradual increase in P₄, and MDA levels, and a strong positive correlation between 0, 4^th (r = 0.54), 4, 8^th (r = 0.59) and 8, 12^th (r = 0.51) day was found. Similarly, GSH levels also showed positive correlation at days 0, 4^th (r = 0.47) and 4, 8^th (r = 0.56). However, a strong negative correlation (r = -0.56) between MDA day 0, and GSH day 8 was found. In conclusion, vitamin C application during insemination period in postpartum cows increases pregnancy rate, and reduces oxidative stress metabolite 8-OHdG levels.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1907-1909
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• 1999

In this paper, we report a high quality GaN films with high hole concentrations and low resistivities without post growth treatment using a GAIVBE system equipped with a home-made inductively coupled RF plasma source. The room temperature hole concentrations obtained were $5{\times}10^{17}{\sim}1.6{\times}10^{19}cm^{-3}$, and the mobilities were $2.5{\sim}8cm^2/Vs$. Also we have grown high quality n-type GaN films with the range of electron concentrations of $1.4{\times}10^{17}{\sim}4.7{\times}10^{19}cm^{-3}$ and the mobilities of $180{\sim}410cm^2/Vs$.

• Transactions on Electrical and Electronic Materials
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• v.7 no.5
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• pp.267-270
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• 2006

The Indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. ITO thin films deposited at room temperature because CR39 substrates its glass-transition temperature of is $130^{\circ}C$. ITO thin films used bottom and top electrode and for organic thin film transparent transistor.(OTFT) ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300 - 800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300 - 800 nm) measured without post annealing process and $9.83{times}10{-4}{\Omega}cm$ a low resistivity was measured thickness of 300 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.186-186
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• 2015

We have introduced multifunctional ITO single thin films formed by normal sputtering system equipped with a plasma limiter which effectively blocks the bombardment of energetic negative oxygen ions. MFSS ITO also possesses high gas diffusion barrier properties simultaneously low resistivity even it deposited at room temperature without post annealing on plastic substrate. Nano-crystalline enhancement by Ar energy has energy window from 20 to 30 eV under blocking NOI condition. Effect of blocking NOI and optimal Ar energy window enhancement facilitate that resistivity is minimized to $3.61{\times}10^{-4}{\Omega}cm$ and the WVTR of 100 nm thick MFSS ITO is $3.9{\times}10^{-3}g/(m^2day)$ which is measured under environmental conditions of 90% relative humidity and 50oC that corresponds to a value of ${\sim}10^{-5}g/(m^2day)$ at room temperature. The multifunctional MFSS ITO with low resistivity, and low gas permeability will be highly valuable for plastic electronics applications.

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.427-429
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• 2016

A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by plasma enhanced chemical vapor deposition (PECVD) is presented. The multi-step process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.

• BMB Reports
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• v.37 no.1
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• pp.133-138
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• 2004

Proteomics is a leading technology for the high-throughput analysis of proteins on a genome-wide scale. With the completion of genome sequencing projects and the development of analytical methods for protein characterization, proteomics has become a major field of functional genomics. The initial objective of proteomics was the large-scale identification of all protein species in a cell or tissue. The applications are currently being extended to analyze various functional aspects of proteins such as post-translational modifications, protein-protein interactions, activities and structures. Whereas the proteomics research is quite advanced in animals and yeast as well as Escherichia coli, plant proteomics is only at the initial phase. Major studies of plant proteomics have been reported on subcellular proteomes and protein complexes (e.g. proteins in the plasma membranes, chloroplasts, mitochondria and nuclei). Here several plant proteomics studies will be presented, followed by a recent work using multidimensional protein identification technology (MudPIT).

• Journal of Korean Society for Atmospheric Environment
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• v.7 no.2
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• pp.137-142
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• 1991

A method is developed for the simultaneous determination of dissolved iron, copper, and zinc in rainwater. The method involves 25-fold evaporative concentration, ion chromatographic separation and subsequent spectrophotometric detection after post-column reaction with 4-(2-pyridylazo) resorcinol. Analytical sensitivities, being defined by the slopes of calibration curves, are 0.93, 0.54, and 0.11 Abs/ $\mu$g/ml for iron, copper, zinc, respectively. Detection limits render around a few tenth of one ng/ml. Precisions evaluated by replicate analysis of real sample are better than 10% RSD. Due to the lack of certified standards for rainwater, the accuracy of the method could not be assessed directly. However, the results of this method agree well with those by inductively coupled plasma mass spectrometry. Analytical results for a suite of Seoul rainwaters are presented herein.

• Transactions on Electrical and Electronic Materials
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• v.5 no.3
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• pp.122-125
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• 2004

ITO films were deposited on polyethylene terephthalate substrate by a dc reactive magnetron sputtering using rf bias without substrate heater and post-deposition thermal treatment. The dependency of rf substrate bias on plasma sputter processing was investigated to control energetic particles and improve ITO film properties. The substrate was applied negative rf bias voltage from 0 to -80 V. The composition of indium, tin, and oxygen atoms is strongly depended on the rf substrate bias. Oxygen deficiency is the highest at rf bias of -20 V. The electrical and optical properties of ITO films also are dominated obviously by negative rf bias.

• Journal of Sensor Science and Technology
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• v.16 no.3
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• pp.229-233
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• 2007

The indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. The ITO thin films deposited at room temperature because CR39 substrate its glass-transition temperature is $130^{\circ}C$. The ITO thin films used bottom and top electrode and for organic thin film transparent transistors (OTFTs). The ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300-800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of the ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300-800 nm) measured without post annealing process and a low resistivity value $9.83{\times}10^{-4}{\Omega}cm$ was measured thickness of 300 nm. All fabrication process of ITO thin films did not exceed $80^{\circ}C$.