• The Transactions of the Korean Institute of Electrical Engineers
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• v.37 no.6
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• pp.406-413
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• 1988

This paper is to investigate relationships between tree inception voltage, tree extension or treeing breakdown voltage and physical characteristics changing as parameter of the post-cured conditions of thermo-setting epoxy resin. According to the results in this paper, the optimal tree inception voltage and treeing breakdown voltage of the samples are obtained for the sample post cured for 15 hours at 100 'C. It can be noticed that these results are closely related with the state of interior molecule coupling and three-dimen sional cross-linked of thermo-setting epoxy resin. And tree inception, tree extension and treeing breakdown of the samples are affected significantly on the post-cured conditions and the cooling method after post-cured of thermo-setting epoxy resin. Moreover, the tree extension by ambient temperature are closely related with softening temperature of thermo-setting epoxy resin.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.232-235
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• 2002

Recently developed liquid silicone rubber (LSR) can be cured by platinum catalyzed additional hydrosilylation mechanism and has the advantage of no byproduct compared to traditional millable peroxide curing silicone rubber. We investigated the characteristics of dielectric breakdown of silicone rubber and adhesion properties between semi-conductive LSR and insulating LSR for high voltage application of pre-molded joint (PMJ). In order to understand the dielectric breakdown characteristics, we used the sheet samples and the paired type rogowski insert electrode system. The breakdown strength and adhesion strength of LSR (E-3) were superior to those of several silicone rubbers. Adhesion strength could be improved by curing at high temperature without post-curing process or enhanced by post-curing process. When LSR (E-3) was cured at $(150^{\circ}C{\times}10min$ semi-conductive )${\times}$ ($175^{\circ}C{\times}10min$ insulation), it showed the high breakdown strength with low standard deviation, and good adhesion strength. In this results, we could apply this process to the fabrication of PMJ without post-curing.

• Journal of Surface Science and Engineering
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• v.52 no.5
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• pp.275-281
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• 2019

Anodization is widely used to enhance the properties of aluminum, such as hardness, electric resistance, abrasion resistance, corrosion resistance etc. But these properties can be enhanced with additional process. According to the partial crystallization of oxide layer with post heat treatment, enhanced hardness can be expected with partial crystallization. In this study, post heat treatments were applied to the anodized aluminum alloys of Al6061 to achieve the partial crystallization, and crystallizations were evaluated with the reduced breakdown voltages. Interestingly, remarkable enhanced hardness (21~29%), abrasion resistance (26~62%), and reduced breakdown voltage (24~44%) were observed for the sulfuric acid anodized samples when we annealed the anodized samples with 1hour post heat treatment at $360^{\circ}C$. For the Al5052 alloys, a lot of cracks were observed when we applied the post heat treatment.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1649-1651
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• 2001

The effect of ribbed spacers having metallic particle attached to the post-type spacer on dielectric breakdown phenomena has been investigated using electric field analysis for imaginary streamer process and a breakdown experiment. It was described that the electric field analysis and the dielectric breakdown test were performed on the case that the particle was attached to the various position of the ribbed spacer having various shapes. As a result, the breakdown voltage of the spacer with two ribs was highest, and it was varied by the length and the thickness of the rib. Especially, in case of the rib with round edge, the breakdown voltage was higher than that with rectangular edge, which complied with the result through the field analysis.

• Journal of Surface Science and Engineering
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• v.32 no.3
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• pp.440-443
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• 1999

The morphology and composition of anodic films, formed on aluminium at various current densities, in the range 1-$100{\;}Am^{-2}$, in the molten bisulphate melt at different temperatures (418-498K), have been studied using transmission electron microscopy of ultramicrotomed film sections, and ion beam thinned films. From the structural analysis of the electron diffraction patterns taken from the ultramicrotomed sections and ion beam thinned films, it can be concluded that the crystal modification process from ${\gamma}-Al_2O_3{\;}to{\;}{\alpha}-Al_2O_3$ proceeds in the following steps : (equation omitted)

• Korean Journal of Materials Research
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• v.3 no.3
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• pp.310-315
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• 1993

The effects of RT A treatment on the breakdown strengths were studied for tantalum pentoxide(${Ta_2}{O_5}$) films prepared by thermal oxidation of dc-sputtered Ta(400$\AA$) on p-type (100) Si wafer. While the relative dielectric constants of the RT A -treated specimens were not remarkably affected, the breakdown strengths of the RTA-treated specimens were greatly changed by RTA temperature and time. After the RTA treatment, the breakdown strengths of the specimens RTA-treated at the temperature below the crystallization temperature were increased to 5.4MV /cm, while those of the specimens RTA -treated at the temperature above it were decreased to 0.5MV /cm. RTA time-independence of the flat-bant voltage shift refleted that the RT A post-annealing effects on the breakdown strengths were not due to the interface reaction between the ${Ta_2}{O_5}$ layer and the Si substrate but, through the RBS analysis, to densification of the ${Ta_2}{O_5}$ films.

• 한국전산유체공학회:학술대회논문집
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• 2003.10a
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• pp.2-2
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• 2003

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.229-236
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• 1998

Ferroelectric $Sr_xBi_yTa_2O_{9+\alpha}$/(0.7$\leqSr\leq1.0,\; 2.0\leqBi\leq2.6)$ solutions were prepared by MOD (Metalorganic Deposition) process. These solutions were made into thin films with thickness ranging from 1500~2000${\AA}$ by spin coating. The phase transformation of the SBT thin films by variation of annealing temperature and annealing time were observed using high temperature XRD and SEM. The crystallization and grain growth of SBT thin film were accomplished at $800^{\circ}C$ for 30 minutes after deposition of Pt top electrode by sputtering to prevent electrical breakdown. Ferroelectric properties of the SBT thin films were measured in the range of $\pm$3V\; and\; \pm5V$. The specimen with composition ratio of Sr/Bi/Ta (0.8/2.4/2.0) has the excellent ferroelectric properties ; $2P_r = 10.5,\; 13.2\muC/cm^2 \;at\; \pm3V\; and\; \pm5V$ respectively. Observing the post annealed Pt/SBT/Pt interface by SEM, it was found that Pt electrode sputtered on to the SBT thin film penetrated into the hollow on the SBT thin film, thus decreasing the effective insulation thickness. The effective insulation thickness recovered by post annealing, and this was confirmed by leakage current density measurement.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.470-475
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• 2009

We deposited $Al_2O_3$ thin films on GaN by remote plasma atomic layer deposition (RPALD) technique, trimethylaluminum(TMA) and oxygen were used as precursors, at fixed process condition, the number of cycle were changed. Growth rate per cycle was $1.2\;{\AA}$/cycle. and Growth rate was in proportion to a number of cycle, the GaN MIS capacitors that $Al_2O_3$ thin film were deposited above 12 nm, have excellent electrical properties, a low electrical leakage current density(${\sim}10^{-10}\;A/cm^2$ at 1.5 MV), but below 12 nm, we can see the degradation of the leakage current density. After post deposition annealing, Dielectric constant was estimated by 1 MHz high-frequency C-V method, it was varied with the anealing temperature from 6.9 at no post anealed to 7.6 at $800^{\circ}C$, and we can see a improvement of the leakage current density and breakdown voltage by post deposition anealing below $700^{\circ}C$, but, after anealed at $800^{\circ}C$, we can see the degradation of the leakage current density and breakdown voltage.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.1
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• pp.44-50
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• 1993

In an attempt to improve the electrical characteristics of tantalum pentoxide dielectric film, silicon substrate was reacted with a nitrogen plasma to form a silicon nitride of 50.angs. and then tantalum pentoxide thin films were formed by reactive sputtering in the same chamber. Breakdown field and leakage current density were measured to be 2.9 MV/cm and 9${\times}10^{8}\;A/cm^{2}$ respectively in these films whose thickness was about 180.angs.. With annealing at rectangular waveguides with a slant grid are investigated here. In particular, 900.deg. C in oxygen ambient for 100 minutes, breakdown field and leakage current density were improved to be 4.8 MV/cm and 1.61.6${\times}10^{8}\;A/cm^{2}$ respectively. It turned out that the electrical characteristics could also be improved by oxygen plasma post-treatment and the conduction mechanism at high electric field proved to be Schottky emission in these double-layered films.