• Title/Summary/Keyword: Positive temperature coefficient of resistivity effect

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Influence of Surface Free Energy of Carbon Black/Thermoplastic Resin Composites on PTC Characteristics

  • Park, Soo-Jin;Kim, Hyun-Chel;Lee, Jae-Rock
    • Carbon letters
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    • v.1 no.1
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    • pp.1-5
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    • 2000
  • The effect of surface free energy on the positive temperature coefficient (PTC) of carbon black/thermoplastic resin composites was investigated. The thermoplastic resins such as EVA, LDPE, LLDPE and HDPE were used with the addition of 30 wt.% of the carbon black. The surface free energy of the composites was studied in the context of two-liquid contact angle measurements, i.e., deionized water and diiodomethane. It was observed that the resistivity on PTC composites Was greatly increased near the crystalline melting temperature, due to the thermal expansion of polymeric matrix. From the experimental results, it was proposed that the decrease of surface free energy induced by interactions between carbon black surfaces and polymer chains is an important factor to the fabrication of a PTC composite made of carbon black and polymeric matrix.

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Effect of Ozone Treatment of Carbon Nanotube on PTC/NTC Behaviors of High-Density Polyethylene Matrix Composites (오존처리에 따른 탄소나노튜브 강화 고밀도 폴리에틸렌 기지 복합재료의 PTC/NTC 특성)

  • Park, Soo-Jin;Seok, Su-Ja;Lee, Jae-Rock;Hong, Sung-Kwon
    • Polymer(Korea)
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    • v.29 no.1
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    • pp.32-35
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    • 2005
  • In this paper, the carbon nanotubes (CNTs) were ozonized and the positive temperature coefficient (PTC) behaviors of CNTs-filled high-density polyethylene (HDPE) conductive composites were studied. The results of element analysis (EA) and FT-IR indicate that the oxygen-containing functional groups on the CNTs surfaces, such as O-H, C-O, and C=O groups, were increased with the ozonization. Electrical resistivities of the CNTs/HDPE composites were measured by using a digital multimeter. The resistivity of the composites was increased abruptly near the crystalline melting temperature of the HDPE used as matrix, which could be attributed to the destruction of conductive network by the thermal expansion of HDPE. And, the PTC intensity of the CNTs/HDPE composites was increased with the increase of the ozone treatment time. It was probably due to the growing of maximum volume resistivity of the composites induced by the increased oxygen-containing functional groups in the CNTs surfaces.

Effect of Sintering Temperature on Properties of $\beta$-SiC-$ZrB_2$ Composites Manufactured by Pressureless Sintering (상압소결법에 의해 제조한 $\beta$-SiC-$ZrB_2$ 복합체의 특성에 미치는 소결온도의 영향)

  • Ju, Jin-Young;Shin, Yong-Deok
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1436-1438
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    • 2001
  • The $\beta$-SiC + $ZrB_2$ ceramic electroconductive composites were pressureless-sintered and annealed by adding 12wt% $Al_2O_3$ + $Y_2O_3$ (6 : 4wt%) powder as a function of sintering temperature. The relative density showed the highest value of 81.1% at 1900$^{\circ}C$ sintering temperature. The phase analysis of the composites by XRD revealed of $\alpha$-SiC(6H), $TiB_2$, $Al_5Y_2O_{12}$ and $\beta$-SiC(15R). Flexural strength showed the highest value of 230 MPa for composites sintered at 1900$^{\circ}C$. The vicker's hardness and the fracture toughness showed the highest value of increased with increasing sintering temperature and showed the highest of 9.88 GPa and 6.05 $MPa{\cdot}m^{1/2}$ at 1900$^{\circ}C$. The electrical resistivity was measured by the Pauw method from 25$^{\circ}C$ to 700$^{\circ}C$. The electrical resistivity of the composites showed the PTCR (Positive Temperature Coefficient Resistivity).

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Effect of Annealing Temperature on Microstructure and Properties of the Pressureless-Sintered $SiC-ZrB_2$ Electroconductive Ceramic Composites (상압소결(常壓燒結)한 $SiC-ZrB_2$ 전도성(電導性) 복합체(複合體)의 미세구조(微細構造)와 특성(特性)에 미치는 Annealing 온도(溫度)의 영향(影響))

  • Shin, Yong-Deok;Ju, Jin-Young
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.9
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    • pp.434-441
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    • 2006
  • The effect of pressureless-sintered temperature on the densification behavior, mechanical and electrical properties of the $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at temperatures in the range of $1,750{\sim}1,900[^{\circ}C]$, with an addition of 12[wt%] of $Al_2O_3+Y_2O_3$(6:4 mixture of $Al_2O_3\;and\;Y_2O_3$) as a sintering aid. The relative density and mechanical properties are increased markedly at temperatures in the range of $1,850{\sim}1,900[{^\circ}C]$. The relative density, flexural strength, vicker's hardness and fracture toughness showed the highest value of 81.1[%], 230[MPa], 9.88[GPa] and $6.05[MPa\;m^{1/2}]$ for $SiC-ZrB_2$ composites of $1,900[{^\circ}C]$ sintering temperature at room temperature respectively. The electrical resistivity was measured by the Pauw method in the temperature ranges from $25[{^\circ}C]\;to\;700[{^\circ}C]$, The electrical resistivity showed the value of $1.36{\times}10^{-4},\;3.83{\times}10^{-4},\;3.51{\times}10^{-4}\;and\; 3.2{\times}10^{-4}[{\Omega}{\cdot}cm]$ for SZ1750, SZ1800, SZ1850 and SZ1900 respectively at room temperature. The electrical resistivity of the composites was all PTCR(Positive Temperature Coefficient Resistivity). The resistance temperature coefficient showed the value of $4.194{\times}10^{-3},\;3,740{\times}10^{-3},\;2,993{\times}10^{-3},\;3,472{\times}10^{-3}/[^{\circ}C}$ for SZ1750, SZ1800, SZ1850 and SZ1900 respectively in the temperature ranges from $25[{\circ}C]\;to\;700[{\circ}C]$, It is assumed that because polycrystallines such as recrystallized $SiC-ZrB_2$ electroconductive ceramic composites, contain of porosity and In Situ $YAG(Al_5Y_3O_{12})$ crystal grain boundaries, their electrical conduction mechanism are complicated. In addition, because the condition of such grain boundaries due to $Al_2O_3+Y_2O_3$ additives widely varies with sintering temperature, electrical resistivity of the $SiC-ZrB_2$ electroconductive ceramic composites with sintering temperature also varies with sintering condition. It is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

Effect of Annealing Temperature on Microstructure and Properties of the Pressureless-Sintered $SiC-TiB_2$ Electroconductive Ceramic Composites (상압소결(常壓燒結)한 $SiC-TiB_2$ 전도성(電導性) 복합체(複合體)의 미세구조(微細構造)와 특성(特性)에 미치는 Annealing 온도(溫度)의 영향(影響))

  • Shin, Yong-Deok;Ju, Jin-Young
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.10
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    • pp.467-474
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    • 2006
  • The effect of pressureless-sintered temperature on the densification behavior, mechanical and electrical properties of the $SiC-TiB_2$ electroconductive ceramic composites was investigated. The $SiC-TiB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at temperatures in the range of $1,750{\sim}1,900[^{\circ}C]$, with an addition of 12[wt%] $Al_2O_3+Y_2O_3(6:4\;mixture\;of\;Al_2O_3\;and\;Y_2O_3)$ as a sintering aid. The relative density, flexural strength, vicker's hardness and fracture toughness showed the highest value of 84.92[%], 140[MPa], 4.07[GPa] and $3.13[MPa{\cdot}m^{1/2}]$ for $SiC-TiB_2$ composites of $1,900[^{\circ}C]$ sintering temperature at room temperature respectively. The electrical resistivity was measured by the Pauw method in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. The electrical resistivity showed the value of $5.51{\times}10^{-4},\;2.11{\times}10^{-3},\;7.91{\times}10^{-4}\;and\;6.91{\times}10^{-4}[\Omega{\cdot}cm]$ for ST1750, ST1800, ST1850 and ST1900 respectively at room temperature. The electrical resistivity of the composites was all PTCR(Positive Temperature Coefficient Resistivity). The resistance temperature coefficient showed the value of $3.116{\times}10^{-3},\;2.717{\times}10^{-3},\;2.939{\times}10^{-3},\;3.342{\times}10^{-3}/[^{\circ}C]$ for ST1750, ST1800, ST1850 and ST1900 respectively in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. It is assumed that because polycrystallines, such as recrystallized $SiC-TiB_2$ electroconductive ceramic composites, contain of porosity and In Situ $YAG(Al_5Y_3O_{12})$ crystal grain boundaries, their electrical conduction mechanism are complicated. In addition, because the condition of such grain boundaries due to $Al_2O_3+Y_2O_3$ additives widely varies with sintering temperature, electrical resistivity of the $SiC-TiB_2$ electroconductive ceramic composites with sintering temperature also varies with sintering condition. It is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

Effect of Pressure on Properties of the SiC-$TiB_2$ Electroconductive Ceramic Composites (SiC-$TiB_2$ 전도성(電導性) 복합체(複合體)의 특성(特性)에 미치는 가압(加壓)의 영향(影響))

  • Shin, Yong-Deok;Seo, Je-Ho;Ju, Jin-Young;Ko, Tae-Hun;Lee, Jung-Hoon
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1228-1229
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    • 2008
  • The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressure or pressureless annealing at 1,650[$^{\circ}C$] for 4 hours. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $TiB_2$, and In Situ $YAG(Al_5Y_3O_{12})$. The relative density, the flexural strength and the Young's modulus showed the highest value of 88.32[%], 136.43[MPa] and 52.82[GPa] for pressure annealed SiC-$TiB_2$ composites at room temperature. The electrical resistivity showed the lowest value of 0.0162[${\Omega}{\cdot}cm$] for pressure annealed SiC-$TiB_2$ composite at 25[$^{\circ}C$]. The electrical resistivity of the pressure annealed SiC-$TiB_2$ composite was positive temperature coefficient resistance (PTCR) but the electrical resistivity of the pressureless annealed SiC-$TiB_2$ composites was negative temperature coefficient resistance(NTCR) in the temperature ranges from 25[$^{\circ}C$] to 700[$^{\circ}C$].

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Effect of YAG on the Fracture Toughness and Electrical Conductivity of $\beta-SIC-ZrB_{2}$ Composites ($\beta-SIC-ZrB_{2}$복합체의 파괴인성과 전기전도도에 미치는 YAG의 영향)

  • Shin, Yong-Deok;Ju, Jin-Young;Yoon, Se-Won;Hwang, Chul;Park, Mi-Lim
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.839-842
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    • 2000
  • The mechanical and electrical properties of the hot-pressed and annealed $\beta$-SiC-ZrB$_2$ electroconductive ceramic composites were investigated as function of the liquid forming additives of $Al_2$O$_3$+Y$_2$O$_3$. Phase analysis of composites by XRD revelled $\alpha$ -SiC(6H), ZrB$_2$, and YAG(Al$_{5}$ Y$_3$O$_{12}$ ). Owing to crack deflection, crack bridging, phase transition and YAG of fracture toughness mechanism, the fracture toughness showed the highest value of 6.3MPa.m$^{1}$2/ for composites added with 24wt% $Al_2$O$_3$+Y$_2$O$_3$additives at room temperature. The resistance temperature coefficient respectively showed the value of 2.46$\times$10$^{-3}$ , 2.47$\times$10$^{-3}$ , 2.52$\times$ 10$^{-3}$ $^{\circ}C$ for composite added with 16, 20, 24wt% A1$_2$O$_3$+Y$_2$O$_3$additives. The electircal resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25^{\circ}C$ to 90$0^{\circ}C$.

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$BaTiO_3-(Bi_{1/2}Na_{1/2})TiO_3$ system for PTC Thermistor (PTC 써미스터를 위한 $BaTiO_3-(Bi_{1/2}Na_{1/2})TiO_3$)

  • Park, Yong-Jun;Lee, Young-Jin;Paik, Jong-Hoo;Kim, Dae-Joon;Lee, Woo-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.91-92
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    • 2007
  • An anomalous positive temperature coefficient of electrical resistivity (PTCR) was investigated in a ferroelectric lead-free perovskite-type compound $(Bi_{0.5}Na_{0.5})TiO_3$ within $BaTiO_3$-based solid solution ceramics. The effect of $Nb_2O_5$ content on the electrical properties and the microstructure of (1 - x) $BaTiO_3-x\;(Bi_{0.5}Na_{0.5})TiO_3$ (BNT) ceramics made using a conventional mixed oxide process also has been studied. The Curie temperature was obviously increased with the increasing of $(Bi_{0.5}Na_{0.5})TIO_3$ content. The Nb - doped BNT ceramics (x=0.01) display low resistivity values of $10^{1{\circ}}C-10^{2{\circ}}C$ ohm.cm at room temperature and the Curie Temperature of $T_c=160^{\circ}C$.

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Effect of the YAG with fracture toughness and electric conductive of $\beta$-Sic-$TiB_2$ ($\beta$-Sic-$TiB_2$복합체의 파괴인성과 전기전도도젠 미치는 YAG의 영향)

  • Yoon, Se-Won;Ju, Jin-Young;Shin, Yong-Deok;Yeo, Dong-Hun;Park, Ki-Yub
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1545-1547
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    • 2000
  • The mechanical and electrical properties of the hot-pressed and annealed $\beta$-Sic-$TiB_2$ electroconductive ceramic composites were investigated as function of the liquid forming additives of $Al_{2}O_{3}+Y_{2}O_3$. Phase analysis of composites by XRD revealed $\alpha$-SiC(6H), $TiB_2$, and YAG($Al_{5}Y_{3}O_{12}$). The relative density and the mechanical properties of composites were increased with increasing $Al_{2}O_{3}+Y_{2}O_3$ contents because YAG of reaction between $Al_{2}O_3$ and $Y_{2}O_3$ was increased. The Flexural strength showed the highest value of 432.5MPa for composites added with l2wt% $Al_{2}O_{3}+Y_{2}O_3$ additives at room temperature. Owing to crack deflection, crack bridging, phase transition and YAG of fracture toughness mechanism. the fracture toughness showed 7.1MPa${\cdot}m^{1/2}$. For composites added with l2wt% $Al_{2}O_{3}+Y_{2}O_3$ additives at room temperature The electrical resistivity and the resistance temperature coefficient respectively showed the lowest of 6.0${\sim}10^{-4}{\Omega}{\cdot}$ cm and 3.1${\times}10^{-3}/^{\circ}C$ for composite added with l2wt% $Al_{2}O_{3}+Y_{2}O_3$ additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of 25$^{\circ}C$ to 700$^{\circ}C$.

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The PTCR Effect in Lead-free (1-x)$BaTiO_3$ - $x(Bi_{0.5}K_{0.5})TiO_3$ Ceramics Doped with $Nb_2O_5$ ($Nb_2O_5$가 도핑된 (1-x)$BaTiO_3$ - $x(Bi_{0.5}K_{0.5})TiO_3$ 무연 세라믹스의 PTCR 효과)

  • Jeong, Young-Hun;Park, Yong-Jun;Lee, Young-Jin;Paik, Jong-Hoo;Lee, Woo-Young;Kim, Dae-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.52-52
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    • 2008
  • The positive temperature coefficient of resistivity (PTCR) effect in (1-x)$BaTiO_3$ - $x(Bi_{0.5}K_{0.5})TiO_3$ doped with $Nb_2O_5$ was investigated. $(Bi_{1/2}K_{1/2})TiO_3$ (BKT) is more environment-friendly than $PbTiO_3$ in order to use in PTC thermistors. The incorporation of 1 mol% BKT to $BaTiO_3$ increased the Curie temperature (Tc) to $148^{\circ}C$. Doping of $Nb_2O_5$ to $Ba_{0.99}(Bi_{0.5}K_{0.5})_{0.01}TiO_3$ (BaBKT) ceramic has enhanced its PTCR effects. For the sample containing 0.025 mol% $Nb_2O_5$, it showed good PTCR properties; low resistivity at room temperature (${\rho}_r$) of 30 $\Omega{\cdot}cm$, a high PTCR intensity of approximately $3.3\times10^3$, implying the ratio of maximum resistivity to minimum resistivity (${\rho}_{max}/{\rho}_{min}$) in the measured temperature range, and a large resistivity temperature factor (a) of 13.7%/$^{\circ}C$ along with a high Curie temperature (Tc) of $167^{\circ}C$. In addition, the cooling rate of the samples during the sintering process had an influence on their PTCR behavior. All the samples showed the best ${\rho}_{max}/{\rho}_{min}$ ratio when they have cooled down at a rate of $600^{\circ}C$/min.

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