• 한국전기전자재료학회논문지
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• 제11권8호
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• pp.620-627
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• 1998

For chemical microsensors such as humidity and gas sensors, it is essential to obtain a single pore with a large inner surface and straight structure. In this paper, cylindrical macroporous silicon layers have been formed of p-silicon substrate by anodization in HF-ethanol-water solution with an applied current. The pores grew normal to the (100) surface and were uniformly distributed. The pore diameter was approximately $1.5~2{\mu}m$ with a depth of $20~30{\mu}m$ and the pores were not interconnected, which are in sharp contrast to the porous silicon reported previouly for similarly doped p-Si. Porous silicon diaphragms 18 to $200{\mu}m$ thick were formed by anistropic etching in TMAH solution and then anodization. The fabrication of macroporous silicon and free-standing diaphragms is expected to offer applications for microsensors, micromachining, and separators.

• 센서학회지
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• 제22권3호
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• pp.227-232
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• 2013

In this research, fiber-optic pressure sensors were fabricated with rugate-structured porous silicon (RPS) diaphragms coated with PMMA (Polymethyl-Methacrylate). The reflectance spectrum of the PMMA/RPS diaphragm was almost the same as that of uncoated RPS diaphragm. However the mechanical strength of the PMMA/RPS diaphragm increased more than that of the uncoated diaphragm. As a result, the fiber-optic sensor fabricated with PMMA/RPS diaphragm could successfully detect more high pressure difference without diaphragm damage than the highest detectable pressure difference of the sensor with normal RPS diaphragm. The response data of the fiber-optic sensor recorded as a function of pressure difference were fitted by theoretical curves. During this process, elastic moduli of the used PMMA/RPS diaphragms were obtained numerically. The dynamic response properties of the fiber-optic sensor were also investigated under continuous variation of the pressure difference conditions.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1558-1560
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• 1998

Macroporous silicon diaphragms 20 to $200{\mu}m$ thick have been formed on p-type silicon by anistropic etching in TMAH solution and then by electrochemical etching in HF-ethanol-water solution with an applied current. The pores have a pore diameter of $1.5{\sim}2{\mu}m$, with a depth of $20{\sim}30{\mu}m$ and are not interconnected, which are in sharp contrast to the porous silicon reported previouly for similarly doped p-Si. The fabrication of macroporous silicon and free-standing diaphragms is expected to offer new applications for microsensors, micro-machining, and separators.