• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.4
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• pp.1993-1998
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• 2011

Semiconductor industry needs to have fine patterns in order to fabricate the high density integrated circuit. For nano-scale patterns, hard-mask is used to multi-layer structure which is formed by CVD (chemical vaporized deposition) process. In this work, we prepared single-layer hard-mask by using organic-inorganic hybrid polymer for spin-on process. The inorganic part of hard-mask was much easier etching than photo resist layer. Beside, the organic part of hard-mask was much harder etching than substrate layer. We characterized the optical and morphological properties to the hard mask films using organic-inorganic hybrid polymer, and then etch rate of photo resist layer and hard-mask film were compared. The hybrid polymer prepared from organic and inorganic materials was found to be useful hard-mask film to form the nano-patterns.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.5
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• pp.217-222
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• 2023

The purpose of this paper was to synthesize a polymer organic hard mask that simplifies the manufacturing process, reduces process time significantly, and thereby lowers manufacturing costs. The results of measuring residual metals through vapor refining showed that 9-Naphthalen-1-ylcarbazole(9-NC) measured 101.75ppb in the 4th zone, 2-Naphthol (2-NA) measured 306.98ppb in the 5th zone, and 9-Fluorenone(9-F) measured between 129.05ppb across the 4th and 5th zones. After passing through a filtration system, the synthesized organic hard mask measured residual metals in the range of 9 to 7ppb. Additionally, the thermal analysis indicated a decrease of 2.78%, a molecular weight of 942, carbon content of 89.74%, and a yield of 72.4%. The etching rate was measured at an average of 18.22Å/s, and the coating thickness deviation was averaged at 1.19. For particle sizes below 0.2㎛ in the organic hard mask, no particles were observed. By varying the coating speed at 1,000, 1,500, and 1,800rpm and measuring the resulting coating thickness, the shrinkage rate ranged from 17.9% to 20.8%. The coating results demonstrated excellent adhesion to SiON, and it was evident that the organic hard mask was uniformly applied.

• Applied Chemistry for Engineering
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• v.22 no.2
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• pp.230-234
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• 2011

In this work, the primary material for a single layered hardmask which can afford a spin-on process was prepared by the minture of organic and inorganic sources. The preparation of hybrid polymer was attempted by esterification from silanol terminated siloxane compounds and acetonide-2,2-bis(methoxy)propionic acid. The optical, thermal and morphological properties of the test hardmask film was examined in terms of cross-linking agent and additives. In addition, the etch rate of hardmask film and photo resist layer were compared. The hybrid polymer prepared from organic and inorganic materials was found to be useful for hardmask film to form the nano-patterns.