• Title/Summary/Keyword: Polyimide Film

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Electrical breakdown free SWCNT thin film transistors on flexible polyimide substrate

  • Park, Jae-Hyeon;Ha, Jeong-Suk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.58-58
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    • 2010
  • Carbon nanotubes (CNTs) have been extensively studied owing to its superior electrical properties, especially high electron mobility, which can be applied to various nano-electronic devices. However, synthesized CNTs have a mixture of metallic and semiconducting tubes so that their separation has been a tremendous obstacle to the practical application in electronic device structures. Among the different separation methods, electrical breakdown process to selectively burn out the metallic tubes has been quite successful though it needs additional process in the fabrication of device structures. Here, we report on the selective but not perfect growth of semiconducting nanotubes via use of diluted ferritin catalyst. SWCNTs were grown on ferritin catalyst, where the concentration of the ferritin solution was changed. In this way, we could fabricate the electrical breakdown free SWCNT thin film transistors on the flexible polyimide (PI) substrate. When we used the ferritin diluted by 1/2000, ~ 60 % of the SWCNT thin film transistors showed a perfect p-type behavior with an on/off current ratio higher than $10^5$ and on-current greater than $10^{-7}$ A. We will also discuss the photo-response of such formed thin film transistors over both visible and UV light.

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A study on the Dielectric Characteristics of Polyimide Organic Ultra Thin Films (폴리이미드 유기초박막의 유전특성에 관한 연구)

  • Chon, D.K.;Lee, K.S.
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1744-1746
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    • 1999
  • In this paper, we give pressure stimulation into organic ultra thin films and detected the induced displacement current properties, and then manufacture a device under the accumulation condition. In processing of a device manufacture, we can see the process is good from the change of a surface pressure and transfer ratio of area per molecule of organic ultra thin films. The structure of manufactured device is MIM(Au/polyimide LB films/AU), the number of accumulated 19 layers. I-V characteristic of the device is measured from -5[V] to +5[V]. The maximum value of measured current is increased as the number of accumulated layers are decreased. The insulation of a thin film is better as the interval between electrodes is larger, and the insulation properties of a thin film is better as the distance between electrodes is larger.

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A Study on Effect of Photo-alignment in Nematic Liquid Crystal on Polyimide Film (폴리이미드막을 이용한 광배향 효과에 관한 연구)

  • 서대식;황율연
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.04a
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    • pp.116-119
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    • 1997
  • We investigated new type non-robbing liquid crystal (LC) alignment techniques in the cell with slanted non-polarized ultraviolet (UV) irradiation on polyimide (Pl) film. It is shown that the uniform alignment for nematic (N) LC is obtained by using slanted non-polarized UV irradiation on Pl surface. We successfully obtained that the pretilt ang1e of NLC is generated about 3 degree in the LC cells by using slanted non-polarized UV irradiation with 70 degree on Pl surface. We consider that the pretilt angle generation for NLC is attributed to interaction between the LC molecular and the PI surface. We conclude that the uniform LC alignment is attributed to anisotropic dispersion force effect due to photo depolymerization of polymer on Pl surface.

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PROPERTIES OF THE CRYSTALLINE POLYIMIDE FILM DEPOSITED BY IONIZED CLUSTER BEAM

  • Whang, Chung-Nam
    • Proceedings of the Materials Research Society of Korea Conference
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    • 1992.05a
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    • pp.6-6
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    • 1992
  • Ionized cluster beam deposition (ICBD) technique has been employed to fabricate high-purity crystalline polyimide (PI) film. The pyromellitic dianhydride (PMDA) and oxydianiline (ODA) were deposited using dual ICB sources, Fourier trans forminfraredspectroscopy (FT-IR), X-ray photoemission spectroscopy (XPS), and Transmission electron microscopy (TEM)study show that the bulk and surface chemical properties and the crystalline structure are very sensitive to the ICBD conditions such as cluster ion acceleration voltage and ionization voltage, At optimum ICBD conditions, the PI films have a maximum imidization, negligible impurities(∼1% isoimide), and a good crystalline structure probably due to the high surface migration energy and surface cleaning effect. These characteristics are superior to those of films deposited by other techniques such as colvent cast, vapowr deposition, or sputtering techniques.

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Coupled Thermal-Structure Analysis of UV Laser Pulsing according to the Thickness of Copper Film on the Surface of Polyimide (UV 펄스 레이저 가공의 구리 박막 두께에 따른 열-구조 연성 해석)

  • Shin, Minjae;Shin, Bosung
    • Laser Solutions
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    • v.16 no.2
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    • pp.7-11
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    • 2013
  • Recently advanced laser processing is widely introduced to improve the efficiency of micro part production and to reduce the rate of inferior goods. In this paper the trend of delamination of single layer with both thin copper and polyimide according to the variation of copper thickness was investigated using the coupled thermal-structural analysis of ANSYS. From these analyses results, some conclusions were obtained. Firstly, the maximum temperature was increasing with respect to decrease of copper thickness. Secondly the maximum strain which was in general estimation the main effect of the delamination was observed in case of the copper thickness of $5{\mu}m$. Finally the trend of the delamination was decreasing with increasing the thickness of copper layer.

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Patterning of Super-hydrophobic Surface Treated Polyimide Film (초발수 기판의 친수 패터닝을 이용한 금속배선화)

  • Rha, Jong-Joo;Um, Dae-Yong;Lee, Gun-Hwan;Choi, Doo-Sun;Kim, Wan-Doo
    • Proceedings of the KSME Conference
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    • 2008.11a
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    • pp.1553-1555
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    • 2008
  • Super-hydrophobic treated Polyimide film was used as a flexible substrate for developing a new method of metallization. Hydrophilic patterns were fabricated by IN irradiation through shadow mask. Patterned super-hydrophobic substrate was dipped into a bath containing silver nano ink Silver ink was only coated on hydrophilic patterned area. Metal lines of $600{\mu}m$ pitch were fabricated successfully. However, their thickness was too thin to serve as interconnection. To overcome this problem, iterative dipping was conducted. After repeating five times, the thickness of silver metal lines were increased to over than $2{\mu}$. After heat treatment of silver lines, their resistivities were reduced to order of $30{\mu}{\Omega}$-cm the similar level of values reported in other literatures. So, a new method of metallization has high potential for application of RFID antenna and flexible electronics substrates.

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A Study on the Preparation of Polyamic Acid Alkylamine Salt Langmuir-Biodgett Films (Polyamic Acid 알킬아민 염의 랭뮤어-블로젯막 제작에 관한 연구)

  • Jeong, Soon-Wook;Lim, Hyun-Sung
    • Journal of the Korean Applied Science and Technology
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    • v.17 no.4
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    • pp.226-232
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    • 2000
  • Polyimide is a well-known organic dielectric material, which has not only high chemical and thermal stability but also good electrical insulating and mechanical properties. In this research, we have synthesized a polyamic acid(PAA), which is a precursor of the polyimide. To obtain the optimum conditions of polyamic acid alkylamine salt(PAAS) Langmuir-Blodgett(LB) film deposition, the ${\pi}-A$ isotherms were examined by varying subphase temperature, barrier moving speed and spreading amount of solution. Film formation was verified by measuring transfer ratio, absorption of UV/vis spectra and scanning electron microscope(SEM) images.

Flexible Plasma Sheets

  • Cho, Guangsup;Kim, Yunjung
    • Applied Science and Convergence Technology
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    • v.27 no.2
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    • pp.23-25
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    • 2018
  • With respect to the electrode structure and the discharge characteristics, the atmospheric pressure plasma sheet of a thin polyimide film is introduced in this study; here, the flexible plasma device of a dielectric-barrier discharge with the ground electrode and the high-voltage electrode formulated on each surface of a polyimide film whose thickness is approximately $100{\mu}m$, that is operated with a sinusoidal voltage at a frequency of 25 kHz and a low voltage from 1 kV to 2 kV is used. The streamer discharge is appeared along the cross-sectional boundary line between two electrodes at the ignition stage, and the plasma is diffused on the dielectric-layer surface over the high-voltage electrode. In the development of a plasma sheet with thin dielectric films, the avoidance of the insulation breakdown and the reduction of the leakage current have a direct influence on the low-voltage operation.

Preparation and Properties of Polyimides Having Highly Flexible Linkages and Their Nanocomposites with Organoclays

  • Cho, Young-Ho;Park, Jong-Min;Park, Yun-Heum
    • Macromolecular Research
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    • v.12 no.1
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    • pp.38-45
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    • 2004
  • A highly flexible polyimide (PI) was synthesized successfully from ethylene glycol bis(anhydrotrimellitate) (TMEG) and 1,3-bis(4-aminophenoxy)benzene (TPER) for its application in electronics. To enhance the thermal stability and mechanical properties of this novel PI, we prepared PI nanocomposite films using nanoparticles of clays that had been treated with organic intercalating agents (organoclays). We used two types of organoclays: montmo-rillonite (MMT) treated with hexadecylamine (C$\_$16/) and MMT treated with dimethyl dihydrogenated tallow quaternary ammonium (l5A). PI/organoclay hybrid films were obtained by first preparing poly(amic acid) (PAA)/organoclay films and then converting the PAA to polyimide by thermal conversion. PAA was characterized by FT-IR and $^1$H-NMR spectroscopy and the conversion of PAA to PI was confirmed by FT-IR spectroscopy. We analyzed the dispersion of the organoclays in the PI film by X-ray diffraction. The thermal stability and mechanical properties of the hybrid films were also investigated.

COF(Chip On Film)에서의 Polyimide/Buffer layer/Cu 접착력 향상

  • 이재원;김상호;이지원;홍순성
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2004.05a
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    • pp.101-107
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    • 2004
  • 각종 전자기기의 소형화, 고성능화 요구에 따라 회로 또는 기판의 고집적화에 따른 대안으로 도입된 COF(Chip On Film)공정에서 PI(polyimide)/buffer layer/Cu의 접착력 개선을 목적으로 본 연구가 진행 되었다. 그리고 buffer layer로써 Cr을 증착 할 때 부착력의 개선을 목적으로 개질처리를 할 때는 RF plasma장비를 사용하였다. 실험 변수로는 peel strength에 대한 buffer layer의 종류와 증착시간, 표면 개질처리시 $O_2$/Ar비이다. Buffer layer의 종류에 따른 접착력은 Cr보다 Ni이 우수하였고 peel strength와 Cu THK는 같은 buffer layer의 증착 structure에서 비례 관계를 나타냈으며, Cr의 증착 시간과 Cu의 증착 시간을 변수로 peel strength test한 값은 Cr증착시간이 30초, Cu증착시간이 20분일때 40g/mm로 최적의 접착력이 나타났다. 증착전 PI의 개질 처리시 $O_2$/Ar 유량비에 따른 peel strength값은 $O_2$/Ar유량비가 증가 할수록 향상되었으며, 2/5에서 최고값인 58g/mm가 나타났다. 그 이상에서는 오히려 감소하였다.

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