• Title/Summary/Keyword: Polyethylene naphthalate

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Flexible E-Paper Displays Using Low-Temperature Process and Printed Organic Transistor Arrays

  • Jin, Yong-Wan;Kim, Joo-Young;Koo, Bon-Won;Song, Byong-Gwon;Kim, Jung-Woo;Kim, Do-Hwan;Yoo, Byung-Wook;Lee, Ji-Youl;Chun, Young-Tea;Lee, Bang-Lin;Jung, Myung-Sup;Park, Jeong-Il;Lee, Sang-Yoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.431-433
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    • 2009
  • We developed 4.8 inch WQVGA e-paper on plastic substrate using organic field effect transistors (OFETs). Polyethylene naphthalate (PEN) film was used as a flexible substrate and arrays of OFETs with bottom-gate, bottom-contact structure were fabricated on it. Lowtemperature curable organic gate insulating materials were employed and polymer semiconductor solutions were ink-jetted on arrays with high-resolution. At all steps, process temperature was limited below $130^{\circ}C$. Finally, we could drive flexible e-paper displays based on OFET arrays with the resolution of 100 dpi.

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Properties of ZrO2 Gas Barrier Film using Facing Target Sputtering System with Low Temperature Deposition Process for Flexible Displays (플렉서블 디스플레이용 저온공정을 갖는 대향 타겟식 스퍼터링 장치를 이용한 ZrO2 가스 차단막의 특성)

  • Kim, Ji-Hwan;Cho, Do-Hyun;Sohn, Sun-Young;Kim, Hwa-Min;Kim, Jong-Jae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.5
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    • pp.425-430
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    • 2009
  • $ZrO_2$ film was deposited by facing target sputtering (FTS) system on polyethylene naphthalate (PEN) substrate as a gas barrier layer for flexible organic light emitting devices (FOLEDs), In order to control the heat of the FTS system caused by the ion bombardment in the cathode compared with the conventional sputtering system, the process characteristics of the FTS apparatus are investigated under various sputtering conditions such as the distance between two targets ($d_{TT}$), the distance between the target and the substrate ($d_{TS}$), and the deposition time. The $ZrO_2$ film by the FTS system can reduce the damage on the films because the ion bombardment with high-energy particles like gamma-electrons, Moreover, the $ZrO_2$ film with optimized condition ($d_{TT}$=140 mm) as a function of the distance from center to edge showed a very uniform thickness below 5 % for a deposition time of 3 hours, which can improve the interface property between the anode and the plastics substrate for flexible displays, It is concluded that the $ZrO_2$ film prepared by the FTS system can be applied as a gas barrier layer or an interlayer between the anode and the plastic substrate with good properties of an uniform thickness and a low deposition-temperature.

Properties of Organic-Inorganic Protective Films on Flexible Plastic Substrates by Spray Coating Method (연성 플라스틱 기판위에 스프레이 코팅방법으로 제조한 유·무기 보호막의 특성)

  • Lee, Sang Hee;Chang, Ho Jung
    • Journal of the Microelectronics and Packaging Society
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    • v.24 no.4
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    • pp.79-84
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    • 2017
  • The solar cells should be protected from the moisture and oxygen in order to sustain the properties and reliability of the devices. In this research, we prepared the protection films on the flexible plastic substrates by spray coating method using organic-inorganic hybrid solutions. The protection characteristics were studied depending on the various process conditions (nozzle distance, thicknesses of the coatings, film structures). The organic-inorganic solutions for the protection film layer were synthesized by addition of $Al_2O_3$ ($P.S+Al_2O_3$) and $SiO_2$ ($P.S+SiO_2$) nano-powders into PVA (polyvinyl alcohol) and SA (sodium alginate) (P.S) organic solution. The optical transmittances of the protection film with the thicknesses of $5{\mu}m$ showed 91%. The optical transmittance decreased from 81.6% to 73.6% with the film thickness increased from $78{\mu}m$ to $178{\mu}m$. In addition, the protective films were prepared on the PEN (polyethylene naphthalate), PC (polycarbonate) single plastic substrates as well as the Acrylate film coated on PC substrate (Acrylate film/PC double layer), and $Al_2O_3$ film coated on PEN substrate ($Al_2O_3$ film/PEN double layer) using the $P.S+Al_2O_3$ organic-inorganic hybrid solutions. The optimum protection film structure was studied by means of the measurements of water vapor transmittance rate (WVTR) and surface morphology. The protective film on PEN/$Al_2O_3$ double layer substrate showed the best water protective property, indicating the WVTR value of $0.004gm/m^2-day$.

Characteristics of amorphous IZTO-based transparent thin film transistors (비정질 IZTO기반의 투명 박막 트렌지스터 특성)

  • Shin, Han-Jae;Lee, Keun-Young;Han, Dong-Cheul;Lee, Do-Kyung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.151-151
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    • 2009
  • Recently, there has been increasing interest in amorphous oxide semiconductors to find alternative materials for an amorphous silicon or organic semiconductor layer as a channel in thin film transistors(TFTs) for transparent electronic devices owing to their high mobility and low photo-sensitivity. The fabriction of amorphous oxide-based TFTs at room temperature on plastic substrates is a key technology to realize transparent flexible electronics. Amorphous oxides allows for controllable conductivity, which permits it to be used both as a transparent semiconductor or conductor, and so to be used both as active and source/drain layers in TFTs. One of the materials that is being responsible for this revolution in the electronics is indium-zinc-tin oxide(IZTO). Since this is relatively new material, it is important to study the properties of room-temperature deposited IZTO thin films and exploration in a possible integration of the material in flexible TFT devices. In this research, we deposited IZTO thin films on polyethylene naphthalate substrate at room temperature by using magnetron sputtering system and investigated their properties. Furthermore, we revealed the fabrication and characteristics of top-gate-type transparent TFTs with IZTO layers, seen in Fig. 1. The experimental results show that by varying the oxygen flow rate during deposition, it can be prepared the IZTO thin films of two-types; One a conductive film that exhibits a resistivity of $2\times10^{-4}$ ohm${\cdot}$cm; the other, semiconductor film with a resistivity of 9 ohm${\cdot}$cm. The TFT devices with IZTO layers are optically transparent in visible region and operate in enhancement mode. The threshold voltage, field effect mobility, on-off current ratio, and sub-threshold slope of the TFT are -0.5 V, $7.2\;cm^2/Vs$, $\sim10^7$ and 0.2 V/decade, respectively. These results will contribute to applications of select TFT to transparent flexible electronics.

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Separation of 2,6-dimethylnaphthalene in Dimethylnaphthalene Isomers Mixture by Crystallization Operation (결정화 조작에 의한 Dimethylnaphthalene 이성체 혼합물 중의 2,6-dimethylnaphthalene의 분리)

  • Kang, Ho-Cheol;Kim, Su Jin
    • Applied Chemistry for Engineering
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    • v.25 no.1
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    • pp.116-120
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    • 2014
  • Light cycle oil (LCO), one of the by-products of the catalytic cracking gasoline manufacturing process, contains a lot of valuable aromatics. In particular, 2,6-dimethylnaphthalene (2,6-DMN) contained in LCO has been becoming important as the basic material of polyethylene naphthalate plastic and liquid crystal polymer, etc. If it were possible to separate and purify the valuable aromatic hydrocarbons (such as 2,6-DMN) from LCO, which have only been used as fuel mixed with heavy oil, it would be very meaningful in terms of the efficient use of resources. We investigated the high-purity purification of 2,6-DMN by the combined method of melt crystallization (MC) and solute crystallization (SC). The enriched DMN isomer mixtures (concentration of 2,6-DMN : 10.43%) recovered from LCO by distillation-extraction combination and the crystal recovered by MC used as raw materials of MC and SC, respectively. The solvent of SC used was a mixture of methanol and acetone (60 : 40 wt%). The crystal of 2,6-DMN with a high-purity of 99.5% was recovered by MC-SC combination. We confirmed that the MC-SC combination was one of the very useful combinations for the high-purity purification of 2,6-DMN contained in the enriched DMN isomer mixtures.