• 제목/요약/키워드: Polyaluminocarbosilane

검색결과 2건 처리시간 0.016초

One-Pot 합성공정으로 만든 Aluminum이 doping된 폴리카보실란으로부터 제조된 치밀한 결정화 탄화규소 섬유 (Dense Polycrystalline SiC Fiber Derived from Aluminum-doped Polycarbosilane by One-Pot Synthesis)

  • 신동근;공은배;류도형;김영희;박홍식;김현이
    • 한국세라믹학회지
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    • 제44권7호
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    • pp.393-402
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    • 2007
  • Polyaluminocarbosilane was synthesized by direct reaction of polydimethylsilane with aluminum(III)-acetylacetonate in the presence of zeolite catalyst. A fraction of higher molecular weight polycarbosilane was formed due to the binding of aluminium acetylacetonate radicals with the polycarbosilane backbone. Small amount of Si-O-Si bond was observed in the as-prepared polyaluminocarbosilane as the result. Polyaluminocarbosilane fiber was obtained through a melt spinning and was pyrolyzed and sintered into SiC fiber from $1200{\sim}2000^{\circ}C$ under a controlled atmosphere. The nucleation and growth of ${\beta}-SiC$ grains between $1400{\sim}1600^{\circ}C$ are accompanied with nano pores formation and residual carbon generation. Above $1800^{\circ}C$, SiC fiber could be sintered to give a fully crystallized ${\beta}-SiC$ with some ${\alpha}-SiC$.

폴리카보실란으로부터 제조된 탄화규소 중공사의 미세구조제어 (Nano-Structure Control of SiC Hollow Fiber Prepared from Polycarbosilane)

  • 신동근;공은배;조광연;권우택;김영희;김수룡;홍준성;류도형
    • 한국세라믹학회지
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    • 제50권4호
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    • pp.301-307
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    • 2013
  • SiC hollow fiber was fabricated by curing, dissolution and sintering of Al-PCS fiber, which was melt spun the polyaluminocarbosilane. Al-PCS fiber was thermally oxidized and dissolved in toluene to remove the unoxidized area, the core of the cured fiber. The wall thickness ($t_{wall}$) of Al-PCS fiber was monotonically increased with an increasing oxidation curing time. The Al-PCS hollow fiber was heat-treated at the temperature between 1200 and $2000^{\circ}C$ to make a SiC hollow fibers having porous structure on the fiber wall. The pore size of the fiber wall was increased with the sintering temperature due to the decomposition of the amorphous $SiC_xO_y$ matrix and the growth of ${\beta}$-SiC in the matrix. At $1400^{\circ}C$, a nano porous wall with a high specific surface area was obtained. However, nano pores grew with the grain growth after the thermal decomposition of the amorphous matrix. This type of SiC hollow fibers are expected to be used as a substrate for a gas separation membrane.