• Title/Summary/Keyword: Poly 3-hexylthiophene

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Properties of bulk-hetro junction polymer solar cells with P3HT:PCBM active layer (P3HT:PCBM의 고분자 유기박막태양전지의 특성연구)

  • Jang, Seong-Kyu;Choi, Jae-Young;Kim, Kun-Ho;Gong, Su-Cheol;Chang, Ho-Jung
    • Proceedings of the KAIS Fall Conference
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    • 2010.11a
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    • pp.488-490
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    • 2010
  • 최근 심각한 환경오염 문제와 화석 에너지 고갈로 차세대 청정 에너지 개발에 대한 중요성이 증대되고 있다. 그중에서 태양정지는 공해가 적고, 자원이 무한적이며 반 영구적인 수명을 가지고 있어 미래에너지 문제를 해결할 수 있는 에너지원으로 기대되고 있다. 본 연구에서는 P3HT(regioregular poly(3-hexylthiophene))와 PCBM(fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester)을 전자 도너와 억셉터 물질을 하나의 브랜드로 광 활성층을 형성하는 BHJ(bulk hetero junction)구조를 갖는 고분자 유기 박막 태양전지를 각각 Toluene, Mono-Chlorobenzene, Dichlorobenzene에 $60^{\circ}C$, 200rpm으로 약 12시간동안 1wt%로 교반(Stirring)한 후에 중량비(1:1 wt%)로 혼합하여 스핀코팅(Spin-coating)으로 제작하였고, 완성된 소자의 광활성층 면적은 0.04cm2이며, $150^{\circ}C$에서 후속 열처리 공정을 통해 특성 향상이 측정 되었다. 태양전지 소자 구조는 Glass / ITO / PEDOT:PSS / P3HT : PCBM / Al이다. 전류-전압, FF(Fill Factor), 변환효율 측정을 위해 solar simulator를 AM1.5 조건(100 mW/cm2)으로 이용하였으며, 소자의 최대 전류밀도는 12mA/$cm^2$, 개방전압은 0.566V이고 F.F(Fill Factor)는 55.2%이고 변환효율은 3.7%이다. 후속 열처리후 더욱 좋은 성능을 갖게 되었고, 최대 효율은 Dichl orobenzene일 때 이다.

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Solution-processible Inorganic-organic Hybrid Bipolar Field Effect Transistors

  • Chae, Gil Jo;Walker, Bright;Kim, Kang Dae;Cho, Shinuk;Seo, Jung Hwa
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.391.2-391.2
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    • 2014
  • Solution-processible hybrid bipolar field effect transistors (HBFETs) with balanced hole and electron mobilities were fabricated using a combination of the organic p-type poly (3-hexylthiophene) (P3HT) layer and inorganic n-type ZnO material. The hole and electron mobilities were first optimized in single layer devices by using acetonitrile as a solvent additive to process the P3HT and annealing to process the ZnO layer. The highest hole mobility of the P3HT-only-devices with 5% acetonitrile was 0.15 cm2V-1s-1, while the largest electron mobility was observed in the ZnO-only-devices annealed at $200^{\circ}C$ and found to be $7.2{\times}10-2cm2V-1s-1$. The inorganic-organic HBFETs consisting of P3HT with 5% acetonitrile and ZnO layer annealed at $200^{\circ}C$ exhibited balanced hole and electron mobilities of $4.0{\times}10-2$ and $3.9{\times}10-2cm2V-1s-1$, respectively. The effect on surface morphology and crystallinity by adding acetonitrile and thermal annealing were investigated through X-ray diffraction and atomic force microscopy (AFM). Our findings indicate that techniques demonstrated herein are of great utility in improving the performance of inorganic-organic hybrid devices

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Enhanced Performance Characteristics of Polymer Photovoltaics by Adding an Additive-incorporated Active Layer

  • Lee, Hye-Hyeon;Hwang, Jong-Won;Jo, Yeong-Ran;Gang, Yong-Su;Park, Seong-Hui;Choe, Yeong-Seon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.316-316
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    • 2010
  • Thin films spin-coated from solvent solutions are characterized by solution parameters and spin-coating process. In this study, performance characteristics of polymer solar cells were investigated with changing solution parameters such as solvent and additives. The phase-separation between polymer and fullerene is needed to make the percolation pathway for better transportation of hole and electron in polymer solar cells. For this reason, cooperative effects of solvent mixtures adding additives with distinct solubility have been studied recently. In this study, chlorobezene, 1, 2-dichlorbenzene, and chloroform were used as solvent. 1, 8-diiodoctaned and 1, 8-octanedithiol were used as additives and were added into poly(3-hexylthiophene-2, 5-diyl)/[6, 6]-phenyl C61 butyric acid methyl ester (P3HT/PCBM) blends. Pre-patterned ITO glass was cleaned using ultrasonication in mixed solvent with ethyl alcohol, isopropyl alcohol and acetone. PEDOT:PSS was spin-coated on to the ITO substrate at 3000rpm and was baked at $120^{\circ}C$ for 10min on the hotplate. The prepared solution was spin-coated at 1000rpm and the spin-coated thin film was dried in the Petri dishes. Al electrode was deposited on the thin film by thermal evaporation. The devices were annealed at $120^{\circ}C$ for 30min. By adding 2.5 volume percent of additives into the chlorobenzene from that bulk heterojunction films consisting of P3HT/PCBM, the power efficiency (AM 1.5G conditions) was increased from 2.16% to 2.69% and 3.12% respectively. We have investigated the effect of additives in P3HT/PCBM blends and the film characteristics and the film characteristics including J-V characteristics, absorption, photoluminescence, X-ray diffraction, and atomic force microscopy to mainly depict the morphology control by doping additives.

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Correlation between Oxidation State and Electron Blocking Performance of Tungsten Oxide Interlayer in Organic Solar Cell

  • Lee, Ji-Seon;Jang, In-Hyuk;Park, Nam-Gyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.217-217
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    • 2012
  • Solution-processed tungsten oxide thin film with thickness of about 30 nm is prepared from ammonium tungstate. This layer is introduced into the interface between the poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) layer and the ITO electrode to be used as an electron blocking layer. The annealed tungsten oxide thin films at $150^{\circ}C$ and $300^{\circ}C$ show amorphous phase, while the $400^{\circ}C$ -annealed tungsten oxide film shows crystalline phase. At $150^{\circ}C$ annealing temperature, the conversion efficiency is significantly improved from 0.71% to 1.42% as the condition is changed from vacuum to air atmosphere, which is related to oxidation state of tungsten in amorphous phase. For the air annealing condition, the conversion efficiency is further increased from 1.42% to 2.01% as the temperature is increased from $150^{\circ}C$ to $300^{\circ}C$, which is mainly due to the removal of the chemisorbed water. However, a slight deterioration in photovoltaic performance is observed when the temperature is increased to $400^{\circ}C$, which is ascribed to poor electron blocking ability due to the formation of crystalline phase. It is concluded that $W^{6+}$ oxidation state and amorphous nature in tungsten oxide interlayer is essential for blocking electron effectively from the active layer to the ITO electrode.

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The Post Annealing Effect of Organic Thin Film Solar Cells with P3HT:PCBM Active Layer (P3HT:PCBM 활성층을 갖는 유기 박막태양전지의 후속 열처리 효과)

  • Jang, Seong-Kyu;Gong, Su-Cheol;Chang, Ho-Jung
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.2
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    • pp.63-67
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    • 2010
  • The organic solar cells with Glass/ITO/PEDOT:PSS/P3HT:PCBM/Al structure were fabricated using regioregular poly (3-hexylthiophene) (P3HT) polymer:(6,6)- phenyl $C_{61}$-butyric acid methyl ester (PCBM) fullerene polymer as the bulk hetero-junction layer. The P3HT and PCBM as the electron donor and acceptor materials were spin casted on the indium tin oxide (ITO) coated glass substrates. The optimum mixing concentration ratio of photovoltaic layer was found to be P3HT:PCBM = 4:4 in wt%, indicating that the short circuit current density ($J_{SC}$), open circuit voltage ($V_{OC}$), fill factor (FF) and power conversion efficiency (PCE) values were about 4.7 $mA/cm^2$, 0.48 V, 43.1% and 0.97%, respectively. To investigate the effects of the post annealing treatment, as prepared organic solar cells were post annealed at the treatment time range from 5min to 20min at $150^{\circ}C$. $J_{SC}$ and $V_{OC}$ increased with increasing the post annealing time from 5min to 15min, which may be originated from the improvement of the light absorption coefficient of P3HT and improved ohmic contact between photo voltaic layer and Al electrode. The maximum $J_{SC},\;V_{OC}$, FF and PCE values of organic solar cell, which was post annealed for 15min at $150^{\circ}C$, were found to be about 7.8 $mA/cm^2$, 0.55 V, 47% and 2.0%, respectively.

Graphene Quantum Dot Interfacial Layer for Organic/Inorganic Hybrid Photovoltaics Prepared by a Facile Solution Process (용액 공정을 통한 그래핀 양자점 삽입형 유/무기 하이브리드 태양전지 제작)

  • Kim, Youngjun;Park, Byoungnam
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.19 no.6
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    • pp.646-651
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    • 2018
  • This paper reports that the electronic properties at a $P3HT/TiO_2$ interface associated with exciton dissociation and transport can be tailored by the insertion of a graphene quantum dot (GQD) layer. For donor/acceptor interface modification in an $ITO/TiO_2/P3HT/Al$ photovoltaic (PV) device, a continuous GQD film was prepared by a sonication treatment in solution that simplifies the conventional processes, including laser fragmentation and hydrothermal treatment, which limits a variety of component layers and involves low cost processing. The high conductivity and favorable energy alignment for exciton dissociation of the GQD layer increased the fill factor and short circuit current. The origin of the improved parameters is discussed in terms of the broad light absorption and enhanced interfacial carrier transport.