• Title/Summary/Keyword: Polishing temperature

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Effects of the Surface Roughness of a Graphite Substrate on the Interlayer Surface Roughness of Deposited SiC Layer (SiC 증착층 계면의 표면조도에 미치는 흑연 기판의 표면조도 영향)

  • Park, Ji Yeon;Jeong, Myung Hoon;Kim, Daejong;Kim, Weon-Ju
    • Journal of the Korean Ceramic Society
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    • v.50 no.2
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    • pp.122-126
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    • 2013
  • The surface roughness of the inner and outer surfaces of a tube is an important requirement for nuclear fuel cladding. When an inner SiC clad tube, which is considered as an advanced Pressurized Water Cooled Reactor (PWR) clad with a three-layered structure, is fabricated by Chemical Vapor Deposition (CVD), the surface roughness of the substrate, graphite, is an important process parameter. The surface character of the graphite substrate could directly affect the roughness of the inner surface of SiC deposits, which is in contact with a substrate. To evaluate the effects of the surface roughness changes of a substrate, SiC deposits were fabricated using different types of graphite substrates prepared by the following four polishing paths and heat-treatment for purification: (1) polishing with #220 abrasive paper (PP) without heat treatment (HT), (2) polishing with #220 PP with HT, (3) #2400 PP without HT, (4) polishing with #2400 PP with HT. The average surface roughnesses (Ra) of each deposited SiC layer are 4.273, 6.599, 3.069, and $6.401{\mu}m$, respectively. In the low pressure SiC CVD process with a graphite substrate, the removal of graphite particles on the graphite surface during the purification and the temperature increasing process for CVD seemed to affect the surface roughness of SiC deposits. For the lower surface roughness of the as-deposited interlayer of SiC on the graphite substrate, the fine controlled processing with the completed removal of rough scratches and cleaning at each polishing and heat treating step was important.

X-ray diffraction analysis on sapphire wafers with surface treatments in chemical-mechanical polishing process (사파이어 웨이퍼 연마공정에서의 표면처리효과에 대한 X-선 회절분석)

  • 김근주;고재천
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.11 no.5
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    • pp.218-223
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    • 2001
  • The chemical-mechanical polishing process was carried out for 2"-dia. sapphire wafer grown by horizontalBridgman method on the urethane lapping pad with the silica sol. The polished wafer shows the full-width at halfmaximum of 200~400 arcsec in double-crystal X-ray diffraction, indicating that the slicing, grinding and lapping processes before the polishing process affected the crystalline structural property of the wafer surface by the mechanical residual stress. For the inclusion of surface treatments after chemical-mechanical polishing such as the thermal annealing at the temperature of $1,200^{\circ}C$for 4 hrs. and chemical etching, the crystalline quality was sigdicantly enhanced with the reduced full-width at half maximum up to 8.3 arcsec.arcsec.

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A Study on a Hartmann Test of Optical Mirror for On-Machine Measurement of Polishing machine (광학면 연마기의 OMM을 위한 Hartmann Test 방법 연구)

  • 김옥현;이응석;오창진;김용관
    • Journal of the Korean Society for Precision Engineering
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    • v.21 no.1
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    • pp.40-45
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    • 2004
  • Recently, aspheric optical lenses and mirrors, which are harder to manufacture and measure than the conventional spherical ones, are widely used, particularly in electronic fabrication process. Generally, interferometric optical method is used for the measurement of spherical optical surface. However, the interferometric method for aspheric surface measurement is difficult because it needs a precise null corrector and strict environmental conditions such as constant temperature, humidity and vibrations. We have been studied on the manufacturing of aspheric optics to improve the surface profile accuracy and productivity using a corrective polishing process. For the corrective polishing, a practical method of On-Machine Measurement (OMM) is required. For this purpose, an optical OMM system has been studied using the Shach-Hartmann test, which is very robust to the practical polishing environment. The wavefront has been reconstructed from the measured data using the primary aberration polynomial function by the least squares fitting. The measured result of the OMM system shows that the maximum deviation is less than 200 nm for the one of commercial Fizeau interferometer Wyko 6000.

Bio-polishing and Silket Treatment of Cotton Yarns (면사의 효소가공 및 실켓 가공)

  • Bae, Young-Hwan;Lee, Ji-Wan;Son, Young-A;Kim, Ju-Hae;Kwon, Mi-Yeon;Kim, Eui-Hwa;Lee, Seung-Goo
    • Textile Coloration and Finishing
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    • v.20 no.4
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    • pp.15-20
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    • 2008
  • The cotton yarn was subjected to bio-polishing treatment with three commercial enzymes(Cellusoft L, Denimax-991L and Denimax-acid) to remove the fuzz on the cotton yarn. Also, enzyme treated cotton yarns were compared with singeing cotton yarns. Experimental variables of enzyme treated cotton yarn were as follow: concentration of enzyme solution and NaOH, dipping time, and processing temperature. The enzymatic treatments were evaluated by analyzing the effect on yarn count, twist contraction, evenness and tenacity. As the results, enzymatic treatment on cotton yarn induced same effects as the traditional singeing treatment. Also, silket treatment of cotton yarn after bio-polishing enhanced the tensile properties of the cotton yarn.

A Study on Magnetic Abrasive Using Sr-Ferrite (Sr-Ferrite를 이용한 자기 연마재에 관한 연구)

  • Kim, Hee-Nam;Kim, Dong-Wook
    • Journal of the Speleological Society of Korea
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    • no.79
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    • pp.77-81
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    • 2007
  • In this paper deals with behavior of the magnetic abrasive using Sr-Ferrite on polishing charateristiccs in a internal finishing of staninless steel pipe a tying magnetic abrasive polishing. The magnetic polishing is the useful method to finish some machinery fabrications by using magnetic power. This method is one of the precision techniques and has in aim for clean technology in the transportation of the pure gas in the clean pipes. The magnetic abrasive polishing method is not so common in the field of machine that it is not known to widely. There are rarely researcher in this field because of non-effectiveness of magnetic abrasive. Therefore, in this paper we deals with the development of the magnetic abrasive with the use of Sr-Ferrite. In this development, abrasive grain SiC has been made by using the resin bond fabricated at low temperature. And magnetic abrasive powder was fabricated from the Sr-Ferrite which was crushed into 200 mesh. The XRD analysis result shows that only SiC abrasive and Sr-Ferrite crystal peaks were detected, explaining that resin bond was not any more to contribute chemical reaction. From MACRO analysis, we found that SiC abrasive and Sr-Ferrite were strongly bonding with each other.

Development of The Magnetic Abrasive Using Ba-Ferrite and GC, CBN (Ba-Ferrite와 GC, CBN을 이용한 자기 연마재 개발)

  • Kim, Hee-Nam;Yun, Yeo-Kwon
    • Journal of the Korean Society of Safety
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    • v.23 no.5
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    • pp.43-48
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    • 2008
  • The magnetic polishing is the useful method to finish some machinery fabrications by using magnetic power. This method is one of the precision polishing techniques and has an aim for clean technology in the transportation of the pure gas in the clean pipes. The magnetic abrasive polishing method is not so common in the field of machine that it is not known to widely. There are only few researchers in this field because of non-effectiveness of magnetic abrasive. Therefore, in this paper deals with development of the magnetic abrasive using Ba-Ferrite. In this development, abrasive grain GC and CBN has been made by using the resin bond fabricated at low temperature. And magnetic abrasive powder was fabricated from the Ba-Ferrite which was crushed into 200 mesh. The XRD analysis result shows that only GC, CBN and Ba-Ferrite crystal peaks were detected, explaining that resin bond was not any more to contribute chemical reaction. From SEM analysis, we found that GC, CBN abrasive and Ba-Ferrite were strongly bonding with each other.

Electrical and Optical of Properties ITO Thin Film with a Control of Temperature in Pad Conditioning Process (CMP 패드 컨디셔닝 온도조절시 ITO박막의 전기적.광학적 특성 거동)

  • Choi, Gwon-Woo;Kim, Nam-Hoon;Seo, Yong-Jin;Lee, Woo-Sun
    • Proceedings of the KIEE Conference
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    • 2005.11a
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    • pp.148-150
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    • 2005
  • Indium tin oxide (ITO) thin film was polished by chemical mechanical polishing (CMP) immediately after pad conditioning with the various conditioning temperatures by control of de-ionized water (DIW). Light transparent efficiency of ITO thin film was improved after CMP process after pad conditioning at the high temperature because the surface morphology was smoother by soften polishing pad and decreased particle size.

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Electrical and Optical Properties of ITO Thin Film with a Control of Temperature in Pad Conditioning Process (패드 컨디셔닝 온도 변화가 ITO 박막의 전기적.광학적 특성에 미치는 영향)

  • Choi, Gwon-Woo;Seo, Yong-Jin;Lee, Woo-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.352-353
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    • 2005
  • Indium tin oxide (ITO) thin film was polished by chemical mechanical polishing (CMP) immediately after pad conditioning with the various conditioning temperatures by control of do-ionized water (DIW). Light transparent efficiency of ITO thin film was improved after CMP process after pad conditioning at the high temperature because the surface morphology was smoother by soften polishing pad and decreased particle size.

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Process Optimization for Life Extension of Electropolishing Solution using Half Round Bus Bar (반구형 부스바를 이용한 전해연마액 수명연장을 위한 공정 최적화)

  • Kim, Soo Han;Lee, Seung Heon;Cho, Jaehoon;Lim, Dong-Ha;Choi, Joongso;Park, Chulhwan
    • Journal of the Korean institute of surface engineering
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    • v.49 no.5
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    • pp.447-453
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    • 2016
  • In this study, we intended to extend the life of electropolishing solution through the reduction of electric resistance by improving the electrolysis efficiency. The optimum conditions were obtained by half round bus bar and Taguchi method. As the main control factors in the electropolishing process, current density, polishing time, electrolyte temperature and flow rate were selected. The electrolyte temperature was the most significant to the electrolysis efficiency. The optimum conditions for the life extension of electropolishing solution were as follows: current density, $45A/dm^2$; polishing time, 6 min; electrolyte temperature, $70^{\circ}C$; flow rate, 11 L/min. As a results of ANOVA of SN ratios, it was found that the electrolyte temperature was significant factor at the 90% confidence level.