• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.707-710
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• 2004

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). In this paper, we have investigated slurry properties and CMP performance of silicon dioxide (oxide) as a function of different temperature of slurry. Thermal effects on the silica slurry properties such as pH, particle size, conductivity and zeta potential were studied. Moreover, the relationship between the removal rate (RR) with WIWNU and slurry properties caused by changes of temperature were investigated. Therefore, the understanding of these temperature effects provides a foundation to optimize an oxide CMP Process for ULSI multi-level interconnection technology.

• 한국표면공학회지
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• 제49권4호
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• pp.363-367
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• 2016

For the industrial application of electropolishing process, we investigated electropolishing characteristics of stainless steel through increasing the specimen size or electrode gap. In this study, we performed a set of experiment with the specimen size of $10cm{\times}10cm$ and the electrode gap of 1 cm or more. In the view of the electropolishing process, the electrolyte temperature and the polishing time were most important factors compared with the current density and the electrode gap. Especially, the electrolyte temperature most importantly affected surface roughness and current efficiency on electropolishing characteristics. For the industrial application of electropolishing process, it should be considered for important factors such as electrolyte temperature, polishing time, current density and electrode gap, etc.

• Design & Manufacturing
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• 제13권3호
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• pp.48-52
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• 2019

As the consumer market in the mold, automation and aerospace industries grows, the demand for chemical machining using on electrochemical polishing increases. To enhance the surface roughness and gloss of the micro-needle, we have studied for an electrochemical polishing. Electrochemical polishing requires the chemical reaction of solution and material according to the electrolyte and electrode. In this study, sulfuric acid(30%), phosphoric acid(50%), and DI-water(20%)were used as the electrolytic solution, and the electrolytic solution temperature used $58^{\circ}C$. Electrochemical polishing was carried out in experimental conditions, and the micro-needle experiment was carried out from the basic experiment to obtain the experimental conditions. Experimental results show that as the voltage and current increase, the surface roughness improved and the gloss is improved. So, the best result for this experiment was obtained in condition 6, which improved micro-needle.

• 구강회복응용과학지
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• 제30권3호
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• pp.199-205
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• 2014

목적: 치과용 연마기를 통한 캔디다균의 2차 감염성 여부를 알아보고자 하였다. 연구 재료 및 방법: 동일한 모형에서 제작된 상악 총의치를 캔디다균에 감염시키고, 멸균된 퍼미스와 휠 증류수를 이용하여, 치과기공용 연마기로 연마하였다. 이후 멸균된 상악 총의치를 연이어 연마한 뒤연마한 부위를 면봉으로 채취하여, 캔디다균을 배양하였다. 연마한 휠은 3일동안 상온에 노출시켜 24시간 간격으로 캔디다균의 잔존여부를 측정하였다. 결과: 연마한 멸균 총의치에서 다수의 캔디다균이 발견되었으며, 연마한 휠에서는 2일까지 캔디다균이 검출되었다. 결론: 의치 연마를 위한 치과기공용 연마기를 사용시 캔디다균의 감염가능성이 있기 때문에 감염방지책이 필요하다.

• 대한안전경영과학회지
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• 제11권4호
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• pp.311-317
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• 2009

In this paper deals with behavior of the magnetic abrasive using Ba-Ferrite on polishing characteristics in a new internal finishing of STS304 pipe applying magnetic abrasive polishing. The magnetic abrasive using Ba-Ferrite grain WA used to resin bond fabricated low temperature. And Ba-Ferrite of magnetic abrasive powder fabricated that Ba-Ferrite was crused into 200 mesh. The previous research have made an experiment in the static state the movement of magnetic abrasive grain is nevertheless in the dynamic state. In this paper, We could have investigated into the changes of the movement of magnetic abrasive grain. In reference to this result, we could have made the experiment which is set under the condition of the magnetic flux density, polishing velocity according to the form of magnetic brush.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.565-568
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• 2003

In this paper we deal with behavior of the magnetic abrasive using Ba-Ferrite on polishing characteristics in a new internal finishing of STS304 pipe applying magnetic abrasive polishing. The magnetic abrasive using Ba-Ferrite grain WA was used to resin bond fabricated at low temperature. And Ba-Ferrite of magnetic abrasive powder was crused into 200 mesh. The previous research made an experiment in the static and the dynamic state on the movement of magnetic abrasive grain. In this paper. We investigated into the changes of the movement of magnetic abrasive grain. In reference to this result. we have made the experiment which is set under the condition of the magnetic flux density. polishing velocity according to the form of magnetic brush.

• 열처리공학회지
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• 제22권4호
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• pp.223-227
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• 2009

The feasibility of plasma electrolytic polishing technology of stainless steel was examined. The results show that austenitic stainless steel can be polished clearly using potentiostatic regimes with various concentration of ammonium sulfate ($(NH_4)_2SO_4$) solution above certain initial temperature. The equipment and deposition produces for polishing process are described and the effect of processing parameters on the characterizations polished-samples has been investigated.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.297-302
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• 2005

Chemical mechanical polishing(CMP) performances can be optimized by several process parameters such as equipment and consumables (pad, backing film and slurry). Pad properties are important in determining removal rate and planarization ability of a CMP process. It is investigated the performance of oxide CMP process using commercial silica slurry after the pad conditioning temperature was varied. Conditioning process with the high temperature made the slurry be unrestricted to flow and be hold, which made the removal rate of oxide film increase. The pad became softer and flexible as the conditioning temperature increases. Then the softer pad provided the better surface planarity of oxide film without defect.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.1283-1288
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• 2003

The friction heat generated by the CMP process hasinfluence on removal rate and WIWNU(Within Wafer Non-Uniformity). Therefore, the object of this study is to find the distribution of temperature on pad surface during CMP process. To do this, the authors analyse the kinematics of CMP equipment to verify the sources of friction heat and compare the analysis result with the experimental results. Through the analysis and experiment conducted in this paper, we can predict the distribution of polishing temperature across the pad surface. Furthermore the result could help to predict the process conditions which could enhance the polishing results, such as WIWNU and removal rate of thin film to achieve more efficient process.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 추계학술대회 논문집
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• pp.939-942
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• 1997

In chemical mechanical polishing(CMP) there are many factors affecting the results. Temperature is one of the factors and it affects the removal rate. That is, the higher it arise, the more the material is removed. But the detailed temperature behavior is not discovered. In this study, we discover the distribution of temperature across the pad where the wafer has just been polished. And then we reveal the cause of the result in connection with the mechanical structure. In addition, we also discover the relationship of the friction force and normal force. With the result of two forces, we get the friction coefficient and obtain the contact model of the wafer and pad.