• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.313-320
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• 2005

Stick-slip friction is one of the material removal mechanisms in tribology. It occurs when the static friction force is larger than the dynamic friction force, and make the friction curve fluctuated. In the friction monitoring of chemical mechanical polishing(CMP), the friction force also vibrates just as stick-slip friction. In this paper, an attempt to show the similarity between stick-slip friction and the friction of CMP was conducted. The prepared hard pa(IC1000/Suba400 stacked/sup TM/) and soft pad(Suba400/sup TM/) were tested with SiO₂ slurry. The friction force was measured by piezoelectric sensor. According to this experiment, it was shown that as the head and table velocity became faster, the stick-slip time shortened because of the change of real contact area. And, the gradient of stick-slip period as a function of head and table speed in soft pad was more precipitous than that of hard one. From these results, it seems that the fluctuating friction force in CMP is stick-slip friction caused by viscoelastic behavior of the pad and the change of real contact area.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.17 no.2
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• pp.1-6
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• 2008

In recent years, developments in the semiconductor and electronic industries have brought a rapid increase in the use of large size silicon wafer. For further improvement of the ultra precision surface and flatness of Si wafer necessary to high density ULSI, it is known that polishing is very important. However, most of these investigation was experiment less than 300mm diameter. Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafers. This study reports the machining variables that has major influence on the characteristic of wafer polishing. It was adapted to polishing pressure, machining speed, and the slurry mix ratio, the optimum condition is selected by ultra precision wafer polishing using load cell and infrared temperature sensor. The optimum machining condition is selected a result data that use a pressure and table speed data. By using optimum condition, it achieves a ultra precision mirror like surface.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.38 no.8
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• pp.887-892
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• 2014

In a conventional magnetic abrasive polishing process, the polishing abrasives are mixed with ferrous particles and slight cutting oil to form a cluster of abrasives. However, when a tool rotates at a high revolution speed, most of the polishing abrasives are scattered away from it due to the increase in centrifugal force. This phenomenon directly reduces the polishing efficiency. The use of a highly viscous matter such as silicone gel instead of cutting oil for mixing is one method to solve this problem and increase abrasive adhesion. Another method to avoid high abrasive scattering is the application of wet magnetic abrasive polishing (WMAP). In WMAP, abundant mineral oil is preliminarily applied to the workpiece surface. This study experimentally evaluated the effect of WMAP on abrasive adhesion. The relationship between the amount of working abrasives and polishing conditions was characterized. Despite the lower adhesion ratio of polishing abrasives, the surface roughness was found to be significantly improved as the result of WMAP.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.5
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• pp.39-39
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• 2003

As the design rules in semiconductor manufacturing process become more and more stringent, the higher degree of planarization of device surface is required for a following lithography process. Also, it is great challenge for chemical mechanical polishing to achieve global planarization of 12” wafer or beyond. To meet such requirements, it is essential to understand the CMP equipment and process itself. In this paper, authors suggest the velocity distribution on the wafer, direction of friction force and the uniformity of velocity distribution of conventional rotary CMP equipment in an analytical method for an intuitive understanding of variation of kinematic variables. To this end, a novel dimensionless variable defined as “kinematic number” is derived. Also, it is shown that the kinematic number could consistently express the velocity distribution and other kinematic characteristics of rotary CMP equipment.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.5
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• pp.29-38
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• 2003

As the design rules in semiconductor manufacturing process become more and more stringent, the higher degree of planarization of device surface is required for a following lithography process. Also, it is great challenge for chemical mechanical polishing to achieve global planarization of 12” wafer or beyond. To meet such requirements, it is essential to understand the CMP equipment and process itself. In this paper, authors suggest the velocity distribution on the wafer, direction of friction force and the uniformity of velocity distribution of conventional rotary CMP equipment in an analytical method for an intuitive understanding of variation of kinematic variables. To this end, a novel dimensionless variable defined as “kinematic number” is derived. Also, it is shown that the kinematic number could consistently express the velocity distribution and other kinematic characteristics of rotary CMP equipment.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.5
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• pp.90-95
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• 2007

Single side final polishing is a very important role to stabilize a wafer finally before the device process on the wafer is executed. In this study, the machining variables, such as pressure, machining time, and the velocity of pad table were adopted. These parameters have the major influence on the characteristics of wafer polishing. We investigated the surface roughness changing these variables to find the optimal polishing condition. Pad, slurry, slurry quantity, and oscillation distance were set to the fixed variables. In order to reduce defects and find a stable machining condition, a hall sensor was used on the polishing process. AE sensor was attached to the polishing machine to verify optimal condition. Applying data analysis of the sensor signal, experiments were performed. We can get better surface roughness from loading the quasi static force and improving wafer-holding method.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.8
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• pp.34-42
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• 2004

A new polishing technique for three dimensional micro/meso-scale parts is suggested using a micro quill and a magnetic chain structure. The principle of this method is to polish the target surface with the collected magnetic brushes at a micro tool by the non-uniform magnetic field generated around the tool. In a typical magnetic abrasive finishing process magnetic particles and abrasive particles are unbonded each other. But, to finish the three dimensional small parts bonded magnetic abrasive have to be used. Bonded magnetic abrasives are made from direct bonding, and their polishing characteristics are also examined. Alumina, silicon carbide and diamond micro powders are used as abrasives. Base metal matrix is carbonyl iron powder. It is found that bonded magnetic abrasives are superior to unbonded one by experiment. finally, the polished surface roughness is evaluated by atomic force microscope.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.11 no.1
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• pp.1-6
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• 2012

The polishing of silicon wafers has an important role in semiconductor manufacturing. Generally, getting a flat surface such as a mirror is the purpose of the process. The wafer surface roughness is affected by many variables such as the characteristics of the carrier head unit, operation, speed, the pad and slurry temperature. Optimum process conditions for experimental temperature, pH value, down-force, slurry ratio are investigated, time is used as a fixed factor. This study carried out a series of experiments at varying platen, chuck rpm and oscillation cpm taking particular note of the difference between the rpm and the affect it has on the surface roughness. In this experiment determine the optimum conditions for polishing silicone wafers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.358-359
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• 2005

Chemical mechanical polishing(CMP) process depends on a variety of variables. Especially, surface roughness of pad plays a key role in material removal in CMP in terms of transportation ability of pores and real contact area. The surface roughness is deteriorated with polishing time by applied pressure and relative velocity. In this reason, diamond conditioner has been used to maintain the roughness on the pad. The authors try to investigate the correlation between pad roughness and frictional behavior by comparing ex-situ conditioning with in-situ conditioning.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.5
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• pp.514-520
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• 2009

In configuring an automated polishing system, a monitoring scheme to estimate the surface roughness is necessary. In this study, a precision polishing process, magnetic abrasive finishing (MAF), along with an in-process monitoring setup was investigated. A magnetic tooling is connected to a CNC machining to polish the surface of stavax(S136) die steel workpieces. During finishing experiments, both AE signals and force signals were sampled and analysed. The finishing results show that MAF has nano scale finishing capability (upto 8nm in surface roughness) and the sensor signals have strong correlations with the parameters such as gap between the tool and workpiece, feed rate and abrasive size. In addition, the signals were utilized as the input parameters of artificial neural networks to predict generated surface roughness. Among the three networks constructed -AE rms input, force input, AE+force input- the ANN with sensor fusion (AE+force) produced most stable results. From above, it has been shown that the proposed sensor fusion scheme is appropriate for the monitoring and prediction of the nano scale precision finishing process.