• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.622-625
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• 2004

The CMP monitoring system was newly developed by the aid of friction force measurement, resulting from installation of piezoelectric quartz sensor on R&D polisher. The correlation between friction and CMP results was investigated in terms of tribological aspects by using the monitoring system. Various friction signals were monitored and analyzed by the change of experimental conditions such as pressure, velocity, pad and slurry. First of all, the lubrication regimes were classified with Sommerfeld Number through measuring coefficient of friction in ILD CMP. And then, the removal mechanism of abrasives could be understood through the correlation with removal rate and coefficient of friction. Especially, the amount of material removal per unit sliding distance is directly proportional to the friction force. The uniformity of CMP performances was also deteriorated as coefficient of friction increased.

• Journal of the Korean Ceramic Society
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• v.42 no.4
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• pp.287-291
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• 2005

Pop-in deformation phenomena in aluminum was studied. Whether a pop-in occurs or not depended on the surface polishing method. Pop-in did not occur in aluminum which was polished mechanically, while it occurred in aluminum which was polished electrically. When pop-in occurred, elastic deformation preceded. Pop-in mechanism based on dislocation activity was suggested. Suggested mechanism was consistent with the result of microstructure analysis by Focused Ion Beam polisher (FIB) and Transmission Electron Microscopy (TEM).

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.950-955
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• 2001

For the development of an ultra-precision CNC polishing system including on-machine measurement system, we study a corrective polishing algorithm. We analyze and test the unit removal profiles for a ball type polishing tool. Using these results we calculate dwell time distributions and residual errors for a target removal shape. We use the polishing simulation method and feed rate calculation method for the dwell time calculation. We test corrective polishing algorithm with an optical glass. The target removal shape is a sine wave that has amplitude 0.3 micro meters. We find this polishing process has a machining resolution of nanometer order and is effective for sub-micrometer order machining. This result will be used for the software development of the CNC polishing system.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1999.10a
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• pp.525-529
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• 1999

A cone shape drum polisher was developed to make up for the demerits of conventional CMP apparatus. The developed equipment has several superiorities. First of all, it can achieve uniform velocity profile on all the contact line because of its shape and easy to control the amount of slurry at the position of use. The whole area of wafer surface is exposed to the visual area except the contact line between wafer and drum, hence we can detect polishing end point more easily than any other polishing equipments. Also it has additional merits such as small foot print and polishing load. Polishing characteristics were investigated by developed equipment.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.1
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• pp.99-106
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• 2002

For the development of a ultra-precision CNC polishing system including on-machine measurement system, we study a corrective polishing algorithm. We calculated unit removal profiles for various flat type polishing tools and polishing tool positions. Using these results we simulate the corrective polishing process based on dwell time control. We calculate dwell time distributions and residual error of the polishing simulation method and the FFT calculation method. We test corrective polishing algorithm with an optical glass. The target removal shape is a sine wave that has amplitude 0.3 micro meters. We find this polishing process has a machining resolution of nanometer order and is effective for sub-micrometer order machining. This result will be used for the software development of the CNC polishing system.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.122-123
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• 2002

Cu CMP process control for global planarization of semiconductor surface were studied on a platen polisher by using an experimental copper slurry containing ceria as the abrasive component. In order to understand the process. a design of experiment was conducted. From the experiment. the effects of polishing parameters such as polishing pressure, platen speed, and speed of wafer carrier on the removal rate of copper and the uniformity in copper removal were calculated and discussed. In this study, process parameters of Cu CMP and WIWNU(Within Wafer Non Uniformity) were presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.57-58
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• 2006

Chemical-mechanical planarization (CMP) of Cu has used currently in semiconductor process for multilevel metallization system. This process requires the application of a considerable down-pressure to the sample in the polishing, because porous low-k films used in the Cu-multilevel interconnects of 65nm technology node are often damaged by mechanical process. Also, it make possible to reduce scratches and contaminations of wafer. Electrochemical mechanical planarization (ECMP) is an emerging extension of CMP. In this study, the electrochemical mechanical polisher was manufactured. And the static and dynamic potentiodynamic curve of Cu were measured in KOH based electrolyte and then the suitable potential was found.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.7
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• pp.22-29
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• 2004

As a result of high integration of semiconductor device, the global planarization of multi-layer structures is necessary. So the chemical mechanical polishing(CMP) is widely applied to manufacturing the dielectric layer and metal line in the semiconductor device. CMP process is under influence of polisher, pad, slurry, and process itself, etc. In comparison with the general CMP which uses the slurry including abrasives, fixed abrasive pad takes advantage of planarity, resulting from decreasing pattern selectivity and defects such as dishing & erosion due to the reduction of abrasive concentration especially. This paper introduces the manufacturing technique of fixed abrasive pad using hydrophilic polymers with swelling characteristic in water and explains the self-conditioning phenomenon. And the tungsten CMP using fixed abrasive pad achieved the good conclusion in terms of the removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary with the pad life-time.

• Restorative Dentistry and Endodontics
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• v.33 no.1
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• pp.1-8
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• 2008

The purpose of this study was to evaluate the effect of a new resin monomer, filler size and polishing technique on the surface roughness of composite resin restorations using confocal laser scanning microscopy. By adding new methoxylated Bis-GMA (Bis-M-GMA, 2,2-bis[4-(2-methoxy-3-methacryloyloxy propoxy) phenyl] propane) having low viscosity, the content of TEGDMA might be decreased. Three experimental composite resins were made: EX1 (Bis-M-GMA/TEGDMA = 95/5 wt%, 40 nm nanofillers); EX2 (Bis-M-GMA/TEGDMA = 95/5 wt%, 20 nm nanofillers); EX3 (Bis-GMA/TEGDMA = 70/30 wt%, 40 nm nanofillers). Filtek Z250 was used as a reference. Nine specimens (6 mm in diameter and 2 mm in thickness) for each experimental composite resin and Filtek Z250 were fabricated in a teflon mold and assigned to three groups. In Mylar strip group, specimens were left undisturbed. In Sof-lex group, specimens were ground with #1000 SiC paper and polished with Sof-lex discs. In DiaPolisher group, specimens were ground with #1000 SiC paper and polished with DiaPolisher polishing points. The Ra (Average roughness), Rq (Root mean square roughness), Rv (Valley roughness), Rp (Peak roughness), Rc (2D roughness) and Sc (3D roughness) values were determined using confocal laser scanning microscopy. The data were statistically analyzed by Two-way ANOVA and Tukey multiple comparisons test (p = 0.05). The type of composite resin and polishing technique significantly affected the surface roughness of the composite resin restorations (p < 0.001). EX3 showed the smoothest surface compared to the other composite resins (p < 0.05). Mylar strip resulted in smoother surface than other polishing techniques (p < 0.05). Bis-M-GMA. a new resin monomer having low viscosity, might reduce the amount of diluent, but showed adverse effect on the surface roughness of composite resin restorations.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1888-1890
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• 1999

In this work, we have systematically studied the effects of filtration and the defect trend as a function of polished wafer count using various filters in Inter-Metal Dielectric(IMD) CMP. The filter Installation in CMP polisher makes defect reduced after IMD CMP. As a result of formation micro-scratches, it shows that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. We have acknowledged slurry filter lifetime is fixed by the degree of generating defects.