• Journal of the Korean Ceramic Society
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• v.36 no.9
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• pp.923-929
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• 1999

The cause of optical nonlinearity induced in thermally poled silica glass is believed to be the space charge polarization. Since the second order optical nonlinearity (electro-optic effect) can be used in optical switches the optical nonlinearity in silica glass has drawn a large attention. Space charge polarization occurs when an ionic conducting material is subjected to dc electric field by the blocking electrode. Thermal poling performed to induce the optical nonlinearity in silica glass is basically identical to the process generating space charge polarization. As a first step to understand the mechanism of space charge polarization in silica glass hence the induced optical nonlinearity the absorption currents as functions of time were measured for various types of silica glasses and analyzed by the theory of space charge polarization. It was found that the electrical relaxation exhibited a step by the space charge polarization in the relatively long time range and dielectric loss peak showed a maximum at a specific temperature which is depending on type of silica glass. It was turned out that this relaxation might be a cause of nonlinearity in electrical conductivity of silica glass.

• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1374-1380
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• 1999

The cause of Scond Harmonic Generation (SHG) in thermally poled silica glass is suggested basedon the electrical and dielectric relaxation measurements. The absorption currents as functions of time were measured for various types of silica glasses and analyzed by the theory of Space Charge Polarization. Space charge polarization occurs when an ionic conducting material is subjected to dc electric field with blocking electrode. Thermal poling performed to induce SHG in silica glass is basically identical to the process generating space charge polarization. Hence it was found that gene-ration removal reproduction and temperature dependence of SHG in poled silica is directly related to those of space charge polarization. It turned out that the fundamental parameters governing the SHG in poled silica are charge carrier concentration and mobility. Based on the theory of space charge polarization and experimental results of electrical rela-xation the method to increase the intensity of SHG is proposed.

• Journal of IKEEE
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• v.26 no.2
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• pp.329-332
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• 2022

In this paper, retention characteristics of lateral charge migration according to parameters of 3D NAND flash memory to which ferroelectric (HfO₂) structure is applied and ∆V_th were analyzed. The larger the P_s, the greater maximum polarization possible in ferroelectric during Programming. Therefore, the initial V_th increases by about 1.04V difference at P_s 70µC/cm² than at P_s 25µC/cm². Also, electrons trapped after the Program operation causes lateral charge migration over time. Since ferroelectric maintains polarization without applying voltage to the gate after Programming, regardless of P_s value, polarization increases as P_r increases and the ∆V_th due to lateral charge migration becomes smaller by about 1.54V difference at P_r 50µC/cm² than P_r 5µC/cm².

• Journal of IKEEE
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• v.25 no.4
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• pp.770-773
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• 2021

In this paper, the retention characteristics of 3D NAND flash memory applied with tapering and ferroelectric (HfO₂) structure were analyzed after programming operation. Electrons trapped in nitride are affected by lateral charge migration over time. It was confirmed that more lateral charge migration occurred in the channel thickened by tapering of the trapped electrons. In addition, the Oxide-Nitride-Ferroelectric (ONF) structure has better lateral charge migration due to polarization, so the change in threshold voltage (V_th) is reduced compared to the Oxide-Nitride-Oxide (ONO) structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.86-89
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• 2000

The detection technique both the polarization and the mobile charge density at the same time in ferroelectric films on Si using TVS method have been proposed. This method yields a polarizable and an ionic displacement current peaks whose areas are proportional to the total polarization reversal charge and the total moble ionic space charge, respectively. The calculated polarization and the mobile charge density were 0.42 [$\mu$C/$\textrm{cm}^2$] and 5.5$\times$10$^{11}$ (ions/$\textrm{cm}^2$) in the SBT film of MFIS structure measured at 25$0^{\circ}C$, and 1.4 [$\mu$C/$\textrm{cm}^2$] in the LiNbO$_3$ film of MFS structure measured at 30$0^{\circ}C$, respectively.

• Electrical & Electronic Materials
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• v.10 no.3
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• pp.239-246
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• 1997

The ZnO is stabilize dielectric constant over a broad temperature range because its addition makes the relaxation time short. In this study, the composite oxide material (B $a_{0.85}$ $Ca_{0.15}$)Ti $O_{3}$ was mixed by ZnO additive material and the dielectric polarization characteristics was studied. The relative density was over 90[%] at all specimen in the structural characteristics. Among of the specimen, the relative density of (B $a_{0.85}$ $Ca_{0.15}$)Ti $O_{3}$ with ZnO (0.4mol) has a 95[%]. The grain size of composite oxide material with an increasing ZnO increased and it was 1.0[.mu.m]-1.22[.mu.m]. In the electrical characteristics, the charge and discharge current was increased by ZnO addition. The dielectric relaxation time was increased by space charge polarization at above 110[.deg. C] and the dielectric relaxation time was fixed by space charge polarization of para-dielectric layer at below 110[.deg. C]. The dielectric relaxation time was maximum when the grain size was small. The dielectric relaxation time is decreased with an additive material ZnO and interface polarization, existing void at the grain and grain boundary. The remnant polarization is increased and the coercive electric field is decreased by ZnO.

• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.6-11
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• 2000

Electron emission from the Pb(ZrxTi1-x)O3 ferroelectrics by pulsed electric field has been investigated as a function of Zr/Ti ratios such as 35/65, 50/50 and 65/35 below 250kV/cm. Electrons were emitted regardless of the applied field polarity to the rear electrode. When the negative field was applied to the rear electrode, the electron emission charge was more stable. It was proved that the electrons were emitted at the edge of the upper electrode. The emission charge increased in order of 65/35>50/50>35/65. The electron emission characteristics were dependent on the ferroelectric properties such as polarization and coercive field. The emission charge and emission threshold field were affected by the polarization change and the coercive field, respectively. This result explains that the electron emission is a field emission with polarization induced surface potential by a modified Fowler-Nordheim plot of emission charge.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.22 no.2
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• pp.311-320
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• 1998

The cryogenic fracture behaviors of austenitic stainless steel HN2 developed for nuclear fusion reactor were evaluated quantitatively by using the small punch(SP) test. The electrochemical polarization test was applied to study thermal aging degradation of HN2 steel. The X-ray diffraction(XRD) analysis was conducted to detect carbides and nitrides precipitated on the grain boundary of the heat treated HN2 steel. The mechanical properties of the HN2 steel significantly decreased with increasing time and temperature of heat treatment or with decreasing testing temperature. The integrated charge(Q) obtained from electrochemical polarization test showed a good correlation with the SP energy(ESP) obtained by means of SP tests. From the results observed in the x-ray diffraction and anodic polarization curve, it was known that the material the grain boundary. Combining SP test and electrochemical polarization test, it could be useful tools to non-destructively evaluate the cryogenic fracture behaviors and the aging degradation for cryogenic structural material.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.6 no.6
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• pp.23-31
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• 1992

Charged particle in the polymers is supposed to affect the electrical conduction and to lead them th dielectrical breakdown finally. So we measured the space charge distribution made by application of high electric field and evaluated the polarity of the charged particle affected on electrical conduction and space charge formed in the insulating materials by using temperature gradient thermally stimulated current measurement method(TG-TSC measurement). As a result, in the cross-linked polyethylene, A-peak was caused from dipole polarization, C-peak was caused from ionic space charge polarization and D-peak was injected trap hole. Also we found it crossible the evaluated the polarity of injected trap carrier and electron(or hole) of carrier trap in the cross-lined polyethylene. We found that ${\gamma}$-ray irradiated low density polyethylene had a relation to the electronic trap and we also could get the value of electric field distribution in the samples of which evaluation was available.