• Journal of the Institute of Electronics Engineers of Korea SP
• /
• v.45 no.5
• /
• pp.95-102
• /
• 2008

This paper presents an appropriate approach for modeling noise in Computed Radiography(CR) images of high strength materials. The approach is specifically designed for types of noise with the statistical and nonlinear properties. CR images Ere degraded even before they are encoded by computer process. Various types of noise often contribute to contaminate radiography image, although they are detected on digitalization. Quantum noise, which is Poisson distributed, is a shot noise, but the photon distribution on Image Plate(IP) of CR system is not always Poisson process. The statistical properties are relative and case-dependant due to its material characteristics. The usual assumption of a distribution of Poisson, binomial and Gaussian statistics are considered. Nonlinear effect is also represented in the process of statistical noise model. It leads to estimate the noise variance in regions from high to low intensity, specifying analytical model. The analysis approach is tested on a database of steel tube step-wedge CR images. The results are available for the comparative parameter studies which measure noise coherence, distribution, signal/noise ratios(SNR) and nonlinear interpolation.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.16 no.5
• /
• pp.982-988
• /
• 2012

This paper has presented the relation of scaling theory and threshold voltage of double gate(DG) MOSFET. In the case of conventional MOSFET, current and switching frequency have been analyzed based on scaling theory. To observe the possibility of application of scaling theory for threshold voltage of DGMOSFET, the change of threshold voltage has been observed and analyzed according to scaling theory. The analytical potential distribution of Poisson equation has been used, and this model has been already verified. To solve Poisson equation, charge distribution such as Gaussian function has been used. As a result, it has been observed that threshold voltage is grealty changed according to scaling factor and change rate of threshold voltages is traced for scaling of doping concentration in channel. This paper has explained for the best modified scaling theory reflected the influence of two gates as using weighting factor when scaling theory has been applied for channel length and channel thickness.

• Geomechanics and Engineering
• /
• v.7 no.4
• /
• pp.403-430
• /
• 2014

Shale gas formations exhibit strong mechanical and strength anisotropies. Thus, it is necessary to study the effect of anisotropy on the hydraulic fracture initiation pressure. The calculation model for the in-situ stress of the bedding formation is improved according to the effective stress theory. An analytical model of the stresses around wellbore in shale gas reservoirs, in consideration of stratum dip direction, dip angle, and in-situ stress azimuth, has been built. Besides, this work established a calculation model for the stress around the perforation holes. In combination with the tensile failure criterion, a prediction model for the hydraulic fracture initiation pressure in the shale gas reservoirs is put forward. The error between the prediction result and the measured value for the shale gas reservoir in the southern Sichuan Province is only 3.5%. Specifically, effects of factors including elasticity modulus, Poisson's ratio, in-situ stress ratio, tensile strength, perforation angle (the angle between perforation direction and the maximum principal stress) of anisotropic formations on hydraulic fracture initiation pressure have been investigated. The perforation angle has the largest effect on the fracture initiation pressure, followed by the in-situ stress ratio, ratio of tensile strength to pore pressure, and the anisotropy ratio of elasticity moduli as the last. The effect of the anisotropy ratio of the Poisson's ratio on the fracture initiation pressure can be ignored. This study provides a reference for the hydraulic fracturing design in shale gas wells.

• Advances in nano research
• /
• v.17 no.2
• /
• pp.137-147
• /
• 2024

Graphene nanoribbons (GNRs) are considered a promising alternative to graphene for future nanoelectronic applications. However, GNRs-based device modeling is still at an early stage. This research models the electronic properties of n-doped rough-edged 13-armchair graphene nanoribbons (13-AGNRs) and quantum transport properties of n-doped rough-edged 13-armchair graphene nanoribbon field-effect transistors (13-AGNRFETs) at different doping concentrations. Step-up and edge doping are used to incorporate doping within the nanostructure. The numerical real-space nearest-neighbour tight-binding (NNTB) method constructs the Hamiltonian operator matrix, which computes electronic properties, including the sub-band structure and bandgap. Quantum transport properties are subsequently computed using the self-consistent solution of the two-dimensional Poisson and Schrödinger equations within the non-equilibrium Green's function method. The finite difference method solves the Poisson equation, while the successive over-relaxation method speeds up the convergence process. Performance metrics of the device are then computed. The results show that highly doped, rough-edged 13-AGNRs exhibit a lower bandgap. Moreover, n-doped rough-edged 13-AGNRFETs with a channel of higher doping concentration have better gate control and are less affected by leakage current because they demonstrate a higher current ratio and lower off-current. Furthermore, highly n-doped rough-edged 13-AGNRFETs have better channel control and are less affected by the short channel effect due to the lower value of subthreshold swing and drain-induced barrier lowering. The inclusion of dopants enhances the on-current by introducing more charge carriers in the highly n-doped, rough-edged channel. This research highlights the importance of optimizing doping concentrations for enhancing GNRFET-based device performance, making them viable for applications in nanoelectronics.

• Journal of Preventive Medicine and Public Health
• /
• v.32 no.2
• /
• pp.191-199
• /
• 1999

Objectives: To examine the relationship between air pollution exposure and mortality in Seoul for the years of 1991-1995, Methods: Daily counts of death were analyzed by general additive Poisson model, with adjustment for effects of secular trend, seasonal factor, day of the week, heat wave, temperature, and humidity. Pollution variables were ozone, nitrogen dioxide, total suspended particles(TSP), and sulfur dioxide. Results: Daily death counts were associated with ozone(1 day before), nitrogen dioxide(1 day before), TSP(2 days before), sulfur dioxide(2 days before). The association with ozone was most statisfically significant and independent of other air pollutants. Increase of 100 ppb in ozone was associated with 0%(95% Cl= 2%-10%) increase in the daily number of death, This effect was greater in persons aged 65 and older. The relative risks of death from respiratory disease and cardiovascular disease were greater than for all-cause mortality in each pollutant. After ozone level exceeds 25 ppb, the dose-response relationship between mortality and ozone was almost linear. However, the effect of TSP, sulfur dioxide, and nitrogen dioxide on mortality might be confounded with each other. Conclusion: Daily variations in air pollution within the range currently occurring in Seoul might have an adverse effect on daily mortality.

• Proceedings of the Earthquake Engineering Society of Korea Conference
• /
• 2001.04a
• /
• pp.120-127
• /
• 2001

Long term earthquake observations at different tunnel sites within a variety of alluvial soil deposits have demonstrated that a circular tunnel is liable to deform in such a way that its two diagonal diameters crossing each other expand and contract alternately. Based on this knowledge, the soil-tunnel interaction and isolation effect for this particular vibration mode is investigated. Interaction effect is considered with the condition of fixed tangential strain between the tunnel and the soil. Isolation effect embodied by covering up the tunnel with isolation materials is discussed as a possible measure for mitigating seismic damage to it. When Poisson`s ratio of isolation material decreases or the shear modulus ratios of the soil to isolation material become large, the isolation effect becomes bigger.

• The Korean Journal of Applied Statistics
• /
• v.27 no.3
• /
• pp.445-459
• /
• 2014

As a certain job is repeatedly done by a worker, the outcome comparative to the effort to complete the job gets more remarkable. The outcome may be the time required and fraction defective. This phenomenon is referred to a learning-curve effect. We focus on the parametric modeling of the learning-curve effects on count data using a logistic cumulative distribution function and some probability mass functions such as a Poisson and negative binomial. We conduct various simulation scenarios to clarify the characteristics of the proposed model. We also consider a real application to compare the two discrete-type distribution functions.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.47 no.12
• /
• pp.17-23
• /
• 2010

In this paper, a new analytical model for deriving the threshold voltage of a short-channel bulk-type MOSFET is suggested. Using the Fourier coefficient method, the Laplace equation in the oxide region and the Poisson equation in the depleted silicon region have been solved two-dimensionally. Making use of them, the minimum surface potential is derived to describe the threshold voltage. Simulation results show good agreement with the dependencies of the threshold voltage on the various device parameters and applied bias voltages.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.13 no.4
• /
• pp.747-752
• /
• 2009

Three dimensional(3D) Poisson's equation is used to calculate the potential variation for FinFET in the channel to analyze subthreshold current and short channel effect(SCE). The analytical model has been presented to lessen calculating time and understand the relationship of parameters. The accuracy of this model has been verified by the data from 3D numerical device simulator and variation for dimension parameters has been explained. The model has been developed to obtain channel potential of FinFET according to channel doping and to calculate subthreshold current and threshold voltage.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.45 no.7
• /
• pp.9-16
• /
• 2008

In this paper, a simple analytical model for deriving the threshold voltage of a short-gate SOI MESFET is suggested. Using the iteration method, the Poisson equation in the fully depleted silicon channel and the Laplace equation in the buried oxide region are solved two-dimensionally, Obtained potential distributions in each region are expressed in terms of fifth-order of $\chi$, where $\chi$ denotes the coordinate perpendicular to the silicon channel direction. From them, the bottom channel potential is used to describe the threshold voltage in a closed-form. Simulation results show the dependencies of the threshold voltage on the various device geometry parameters and applied bias voltages.