• Title/Summary/Keyword: Poisson effect

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The Poisson effect on the curved beam analysis

  • Chiang, Yih-Cherng
    • Structural Engineering and Mechanics
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    • 제19권6호
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    • pp.707-720
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    • 2005
  • The bending stress formula that taking into account the transverse deformation is developed for plane-curved, untwisted isotropic beams subjected to loadings that result in deformations in the plane of curvature. In order to account the transverse Poisson contraction effect, a new constitutive relation between force resultants, moment resultants, mid-plane strains and deformed curvatures for a curved plate is derived in a $6{\times}6$ matrix form. This constitutive relation will provide the fundamental basis to the analyses of curved structures composing of isotropic or anisotropic materials. Then, the bending stress formula of a curved isotropic beam can be deduced from this newly developed curved plate theory. The stress predictions by the present analysis are compared to those by the analysis that neglected the Poisson contraction effect. The results show that the Poisson effect becomes more significant as the Poisson ratio and the curvature are getting larger.

Poisson Effect on Electromechanical Impedance of Unconstrained Piezoelectric Patch

  • Shin, Sung-Woo;Kwon, Oh-Heon
    • International Journal of Safety
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    • 제8권2호
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    • pp.26-30
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    • 2009
  • In this study, the Poisson effect on resonant frequency behaviors of the unconstrained piezoelectric patch is investigated. The electromechanical impedance models for the un-bonded patch are derived from the two existing bonded patch models and numerical analysis for a given piezoelectric material is performed. From the analysis, it is found that the Poisson effect is not important as long as the electromechanical impedance model is used to predict the locations of resonant frequencies. However, Poisson effect should be considered when predicting the location of the largest resonant frequency of the patch since the amplitude responses are different with the model used.

THE EFFECT OF TRACER PARTICLE SIZE ON FEED MIXING QUALITY

  • Heping, Z.;Chuanping, F.
    • Asian-Australasian Journal of Animal Sciences
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    • 제1권4호
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    • pp.189-193
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    • 1988
  • Distribution of tracer particles in carrier conform to Poisson distribution and the effect of Poisson distribution on mixing uniformity can be reduced by increasing the tracer particle number per unit weight. In this paper, above-mentioned theory has been demonstrated by using three kinds of rotor whose pitches are different.

Correlation between frequency and Poisson's ratio: Study of durability of armchair SWCNTs

  • Muzamal Hussain;Mohamed A. Khadimallah;Abdelouahed Tounsi
    • Computers and Concrete
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    • 제32권3호
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    • pp.303-311
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    • 2023
  • An analysis of the Poisson's ratios influence of single walled carbon nanotubes (SWCNTs) based on Sander's shell theory is carried out. The effect of Poisson's ratio, boundary conditions and different armchairs SWCNTs is discussed and studied. The Galerkin's method is applied to get the eigen values in matrix form. The obtained results shows that, the decrease in ratios of Poisson, the frequency increases. Poisson's ratio directly measures the deformation in the material. A high Poisson's ratio denotes that the material exhibits large elastic deformation. Due to these deformation frequencies of carbon nanotubes increases. The frequency value increases with the increase of indices of single walled carbon nanotubes. The prescribe boundary conditions used are simply supported and clamped simply supported. The Timoshenko beam model is used to compare the results. The present method should serve as bench mark results for agreeing the results of other models, with slightly different value of the natural frequencies.

The Likelihood for a Two-Dimensional Poisson Exceedance Point Process Model

  • Yun, Seok-Hoon
    • Communications for Statistical Applications and Methods
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    • 제15권5호
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    • pp.793-798
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    • 2008
  • Extreme value inference deals with fitting the generalized extreme value distribution model and the generalized Pareto distribution model, which are recently combined to give a single model, namely a two-dimensional non-homogeneous Poisson exceedance point process model. In this paper, we extend the two-dimensional non-homogeneous Poisson process model to include non-stationary effect or dependence on covariates and then derive the likelihood for the extended model.

음의 프와송 비를 갖는 미세 구조체에 대한 유한요소해석 (Finite Element Analysis to Micro-structure with Negative Poisson's ratio)

  • 이문규;최귀원;최재봉
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2003년도 춘계학술대회 논문집
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    • pp.694-697
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    • 2003
  • Materials with specific micro-structural shape can exhibit negative Poisson's ratio. These materials can be widely used in structural applications because of their high resilience and resistance to impact. Specially, in the field of artificial implant's material, they have many potential applications. In this study, we investigated the Poisson's ratio and the ratio(E$_{e}$/E) of the elastic modulus of rotational particle structures based on structural design variables using finite element method. As the ratio of fibril's length to particle's diameter increased and the ratio of fibril's diameter to fibril's length decreased fixing the fibril's angle with 45 degree. the negative Poisson effect of rotational particle structures increased. The ratio of elastic modulus of these structures decreased with Poisson's ratio. The results show the reasonable values as compared with the previous analytical results.s.

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Compact Model of a pH Sensor with Depletion-Mode Silicon-Nanowire Field-Effect Transistor

  • Yu, Yun Seop
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제14권4호
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    • pp.451-456
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    • 2014
  • A compact model of a depletion-mode silicon-nanowire (Si-NW) pH sensor is proposed. This drain current model is obtained from the Pao-Sah integral and the continuous charge-based model, which is derived by applying the parabolic potential approximation to the Poisson's equation in the cylindrical coordinate system. The threshold-voltage shift in the drain-current model is obtained by solving the nonlinear Poisson-Boltzmann equation for the electrolyte. The simulation results obtained from the proposed drain-current model for the Si-NW field-effect transistor (SiNWFET) agree well with those of the three-dimensional (3D) device simulation, and those from the Si-NW pH sensor model also agree with the experimental data.

Empirical Bayes Estimate for Mixed Model with Time Effect

  • Kim, Yong-Chul
    • Communications for Statistical Applications and Methods
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    • 제9권2호
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    • pp.515-520
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    • 2002
  • In general, we use the hierarchical Poisson-gamma model for the Poisson data in generalized linear model. Time effect will be emphasized for the analysis of the observed data to be collected annually for the time period. An extended model with time effect for estimating the effect is proposed. In particularly, we discuss the Quasi likelihood function which is used to numerical approximation for the likelihood function of the parameter.

Statistical Analysis of K-League Data using Poisson Model

  • Kim, Yang-Jin
    • 응용통계연구
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    • 제25권5호
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    • pp.775-783
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    • 2012
  • Several statistical models for bivariate poisson data are suggested and used to analyze 2011 K-league data. Our interest is composed of two purposes: The first purpose is to exploit potential attacking and defensive abilities of each team. Particular, a bivariate poisson model with diagonal inflation is incorporated for the estimation of draws. A joint model is applied to estimate an association between poisson distribution and probability of draw. The second one is to investigate causes on scoring time of goals and a regression technique of recurrent event data is applied. Some related future works are suggested.

포아송 분포를 가정한 Wafer 수준 Statistical Bin Limits 결정방법과 표본크기 효과에 대한 평가 (Methods and Sample Size Effect Evaluation for Wafer Level Statistical Bin Limits Determination with Poisson Distributions)

  • 박성민;김영식
    • 산업공학
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    • 제17권1호
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    • pp.1-12
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    • 2004
  • In a modern semiconductor device manufacturing industry, statistical bin limits on wafer level test bin data are used for minimizing value added to defective product as well as protecting end customers from potential quality and reliability excursion. Most wafer level test bin data show skewed distributions. By Monte Carlo simulation, this paper evaluates methods and sample size effect regarding determination of statistical bin limits. In the simulation, it is assumed that wafer level test bin data follow the Poisson distribution. Hence, typical shapes of the data distribution can be specified in terms of the distribution's parameter. This study examines three different methods; 1) percentile based methodology; 2) data transformation; and 3) Poisson model fitting. The mean square error is adopted as a performance measure for each simulation scenario. Then, a case study is presented. Results show that the percentile and transformation based methods give more stable statistical bin limits associated with the real dataset. However, with highly skewed distributions, the transformation based method should be used with caution in determining statistical bin limits. When the data are well fitted to a certain probability distribution, the model fitting approach can be used in the determination. As for the sample size effect, the mean square error seems to reduce exponentially according to the sample size.