• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2012.05a
• /
• pp.716-718
• /
• 2012

This paper have presented the change for subthreshold characteristics for double gate(DG) MOSFET based on scaling theory and the shape of Gaussian function. To obtain the analytical solution of Poisson's equation, Gaussian function been used as carrier distribution and consequently potential distributions have been analyzed closely for experimental results, and the subthreshold characteristics have been analyzed for the shape parameters of Gaussian function such as projected range and standard projected deviation. Since this potential model has been verified in the previous papers, we have used this model to analyze the subthreshold chatacteristics. The scaling theory is to sustain constant outputs for the change of device parameters. As a result to apply the scaling theory for DGMOSFET, we know the subthreshold characteristics have been greatly changed, and the change of threshold voltage is bigger relatively.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.10 no.10
• /
• pp.1815-1821
• /
• 2006

In this paper, the subthreshold swing has been analyzed for FinFET under channel length of 20nm. The analytical current model has been developed , including thermionic current and tunneling current models. The potential distribution by Poisson equation and carrier distribution by Maxwell-Boltzman statistics are used to calculate thermionic emission current and WKB(Wentzel-Kramers-Brillouin) approximation to tunneling current. The cutoff current is obtained by simple adding two currents since two current is independent. The subthreshold swings by this model are compared with those by two dimensional simulation and two values agree well. Since the tunneling current increases especially under channel length of 10nm, the characteristics of subthreshold swing is degraded. The channel and gate oxide thickness have to be fabricated as am as possible to decrease this short channel effects, and this process has to be developed. The subthreshold swings as a function of channel doping concentrations are obtained. Note that subthreshold swings are resultly constant at low doping concentration.

• Journal of Internet Computing and Services
• /
• v.5 no.4
• /
• pp.63-76
• /
• 2004

For efficient design and operation of a communication network, precise simulation of network characteristics is essential. This issue has been the focus of research by several groups. In this study, we first modeled the HTTP traffic which would be employed on simulation on the level of application using the real collected traffic data. There are two different viewpoints on the characteristics of web traffic pattern, Poisson distribution and self-similar characteristics. In our study, the results show that web traffic characteristics do not depend on only one type of distribution, but the traffic can be modeled as composition of these depending on the size of response of Web server. This implicates that the web traffic can be modeled as the combination of two characteristics. We also found that the characteristics of Web traffic rely on the properties of web servers. This result was deployed as a traffic generator in implementing the network simulator (NetDAS).

• Asian Pacific Journal of Cancer Prevention
• /
• v.15 no.12
• /
• pp.4839-4842
• /
• 2014

Background: Although the Cox's proportional hazard model is the popular approach for survival analysis to investigate significant risk factors of cancer patient survival, it is not appropriate in the case of log-term disease free survival. Recently, cure rate models have been introduced to distinguish between clinical determinants of cure and variables associated with the time to event of interest. The aim of this study was to use a cure rate model to determine the clinical associated factors for cure rates of patients with breast cancer (BC). Materials and Methods: This prospective cohort study covered 305 patients with BC, admitted at Shahid Faiazbakhsh Hospital, Tehran, during 2006 to 2008 and followed until April 2012. Cases of patient death were confirmed by telephone contact. For data analysis, a non-mixed cure rate model with Poisson distribution and negative binomial distribution were employed. All analyses were carried out using a developed Macro in WinBugs. Deviance information criteria (DIC) were employed to find the best model. Results: The overall 1-year, 3-year and 5-year relative survival rates were 97%, 89% and 74%. Metastasis and stage of BC were the significant factors, but age was significant only in negative binomial model. The DIC also showed that the negative binomial model had a better fit. Conclusions: This study indicated that, metastasis and stage of BC were identified as the clinical criteria for cure rates. There are limited studies on BC survival which employed these cure rate models to identify the clinical factors associated with cure. These models are better than Cox, in the case of long-term survival.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.25 no.11
• /
• pp.1373-1379
• /
• 1988

This paper describes a two-dimensional analysis of the potential distribution and electron concentration of the MODFET at channel using FDM. More exact analysis can be obtained by two-dimensional analysis which considers parasitic effects ignored in one-dimensional analysis. Using Poisson and Shrodinger equations, the potential distribution and the wave function are calculated within a constant error bound. As a result, the relations between the thickness of spacer, doping concentration of (n) AlGaAs layer, and the sheet density of the 2DEG (2 Dimensional Electron Gas) of MODFET at channel are suggested quantitively. The sheet density of the 2DEG is increased as the thickness of the spacer is decreased of the doping concentration of the (n)AlGaAs layer is lowered.

• Journal of the Korean Data and Information Science Society
• /
• v.27 no.3
• /
• pp.711-724
• /
• 2016

Under variable complex operating environment, various factors can affect the lifetimes of systems. In this research, we study bivariate reliability models having multiple dynamic competing risks. As competing risks, in addition to the natural failure, we consider the increased stress caused by the failure of one component, external shocks, and the level of stress of the working environment at the same time. Considering two reliability models which take into account all of these competing risks, we derive bivariate life distributions. Furthermore, we compare these two models and also compare the distributions of maximum and minimum statistics in the two models.

• The Korean Journal of Applied Statistics
• /
• v.23 no.2
• /
• pp.335-344
• /
• 2010

Reliability of the estimation is usually damaged in the situation where a linear regression model without spatial dependencies is employed to the spatial data analysis. In this study, we considered the conditional autoregressive model in order to construct spatial association structures and estimate the parameters via the Bayesian approaches. Finally, we compared the performances of the models with spatial effects and the ones without spatial effects. We analyzed the yearly total crime count data measured from each of 25 districts in Seoul, South Korea in 2007.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.18 no.12
• /
• pp.2939-2945
• /
• 2014

This paper has analyzed the change of threshold voltage for oxide structure of symmetric and asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET can be fabricated with different top and bottom gate oxide thickness, while the symmetric DGMOSFET has the same top and bottom gate oxide thickness. Therefore optimum threshold voltage is considered for top and bottom gate oxide thickness of asymmetric DGMOSFET, compared with the threshold voltage of symmetric DGMOSFET. To obtain the threshold voltage, the analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. We investigate for bottom gate voltage, channel length and thickness, and doping concentration how top and bottom gate oxide thickness influences on threshold voltage using this threshold voltage model. As a result, threshold voltage is greatly changed for oxide thickness, and we know the changing trend greatly differs with bottom gate voltage, channel length and thickness, and doping concentration.

• Journal of Digital Convergence
• /
• v.11 no.9
• /
• pp.159-166
• /
• 2013

In this paper, make a study decision problem called an optimal release policies after testing a software system in development phase and transfer it to the user. When correcting or modifying the software, finite failure non-homogeneous Poisson process model, presented and propose release policies of the life distribution, half-logistic property model which used to an area of reliability because of various shape and scale parameter. In this paper, discuss optimal software release policies which minimize a total average software cost of development and maintenance under the constraint of satisfying a software reliability requirement. In a numerical example, the parameters estimation using maximum likelihood estimation of failure time data, make out estimating software optimal release time. Software release time is used as prior information, potential security damages should be reduced.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2006.05a
• /
• pp.865-868
• /
• 2006

In this paper, the subthreshold swing has been analyzed for double gate FinFET under channel length of 20nm. The analytical current model has been developed, including thermionic current and tunneling current models. The potential distribution by Poisson equation and carrier distribution by Maxwell-Boltzman statistics are used to calculate thermionic emission current, and WKB(Wentzel-Framers-Brillouin) approximation to tunneling current. The cutoff current is obtained by simple adding two currents since two current is independent. The subthreshold swings by this model are compared with those by two dimensional simulation and two values are good agreement. Since the tunneling current increases especially under channel length of 10nm, the characteristics of subthreshold swing is degraded. The channel and gate oxide thickness have to be fabricated as thin as possible to decrease this short channel effects and this process has to be developed. The subthreshold swings as a function of channel doping concentrations are obtained.