• 한국ITS학회:학술대회논문집
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• v.2007 no.10
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• pp.92-99
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• 2007

• Journal of Applied Reliability
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• v.16 no.3
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• pp.192-201
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• 2016

Purpose: In this paper, we propose the output model of the optimal inventory requirements of the Maintenance Float (M/F). Weapon systems were modernized and increased costs. Thus, the complexity increases with. Alternatives to achieve the goal of availability of weapon systems and to reduce life-cycle cost are required. Especially, securing spare parts is more effective than adding the amount of equipment or maintenance facilities to achieve the goal of availability and reduce life cycle costs. However, securing spare parts and repair costs are directly related, so exact requirements are needed. Methods: Three kinds of methods (Calculation method of applying the Poisson distribution, Calculation method of considering the number of CSP, and Calculation method of applying M&S program) that this paper proposed compare the influence of the availability and the amount of spare parts. Result: We calculate the cost of M/F when the operational availability is over than 80% and compare that result. The biggest cost was calculated from the Poisson distribution method. We found that requirements and unit price is the key factor that gives a significant effect. Conclusion: These three kinds of methods can be used as a basis for Maintenance Float calculation. Among them, the calculation method based on CSP is optimal replacement equipment requirements calculation method.

• Journal of the Korean Society of Marine Environment & Safety
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• v.22 no.5
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• pp.402-409
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• 2016

Vessel traffic servies (VTS) control movements in ports and coastal areas 24 hours a day using VHF. Thus, we were able to check ship movements and the patterns followed by VTS officers in VTS areas using VHF communication analysis. This study is intended to identify control intervals for dangerous situations and provide VTS officers with basic data and guidelines to prevent these occurrences in advance. We listened to Busan port's VHF communication for seven days and obtained risk values using the Park model with reference to controlled ships. The probability of a dangerous situation arising under a controller's watch per unit of time was confirmed to follow a Poisson distribution. As a result, for each 3.50 hours that VTS directly controls an area, (and in daytime for each 2.85 hours) a ship communicates in a VTS area every 3.84 hours, and some of there communications exceed certain risk values in VTS areas.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.3
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• pp.651-656
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• 2014

This paper analyzed the change of subthreshold swing for channel doping of asymmetric double gate(DG) MOSFET. The subthreshold swing is the factor to describe the decreasing rate of off current in the subthreshold region, and plays a very important role in application of digital circuits. Poisson's equation was used to analyze the subthreshold swing for asymmetric DGMOSFET. Asymmetric DGMOSFET could be fabricated with the different top and bottom gate oxide thickness and bias voltage unlike symmetric DGMOSFET. It is investigated in this paper how the doping in channel, gate oxide thickness and gate bias voltages for asymmetric DGMOSFET influenced on subthreshold swing. Gaussian function had been used as doping distribution in solving the Poisson's equation, and the change of subthreshold swing was observed for projected range and standard projected deviation used as parameters of Gaussian distribution. Resultly, the subthreshold swing was greatly changed for doping concentration and profiles, and gate oxide thickness and bias voltage had a big impact on subthreshold swing.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.5
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• pp.1143-1148
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• 2014

This paper has analyzed the change of subthreshold swing for doping distribution function of asymmetric double gate(DG) MOSFET. The basic factors to determine the characteristics of DGMOSFET are dimensions of channel, i.e. channel length and channel thickness, and doping distribution function. The doping distributions are determined by ion implantation used for channel doping, and follow Gaussian distribution function. Gaussian function has been used as carrier distribution in solving the Poisson's equation. Since the Gaussian function is exactly not symmetric for top and bottome gates, the subthreshold swings are greatly changed for channel length and thickness, and the voltages of top and bottom gates for asymmetric double gate MOSFET. The deviation of subthreshold swings has been investigated for parameters of Gaussian distribution function such as projected range and standard projected deviation in this paper. As a result, we know the subthreshold swing is greatly changed for doping profiles and bias voltage.

• Journal of the Korean Statistical Society
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• v.26 no.2
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• pp.155-170
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• 1997

We propose an integer-valued MA(q) process with Poisson disturbance. Its various properties are discussed such as the joint distribution, time reversibility and regression. We derive the asymptotic distribution of autocovariance function and estimators of the parameters in the suggested model. We also consider the relationship between INMA(q) and M/D/.infty. processes.

• Journal of Information Technology Applications and Management
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• v.27 no.3
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• pp.69-75
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• 2020

In this paper, we applied the shape parameters of the exponentialized exponential life distribution widely used in the field of software reliability, and compared the reliability properties of the software using the non-homogeneous Poisson process in finite failure. In addition, the average value function is also a non-decreasing form. In the case of the larger the shape parameter, the smaller the estimated error in predicting the predicted value in comparison with the true value, so it can be regarded as an efficient model in terms of relative accuracy. Also, in the larger the shape parameter, the larger the estimated value of the coefficient of determination, which can be regarded as an efficient model in terms of suitability. So. the larger the shape parameter model can be regarded as an efficient model in terms of goodness-of-fit. In the form of the reliability function, it gradually appears as a non-increasing pattern and the higher the shape parameter, the lower it is as the mission time elapses. Through this study, software operators can use the pattern of mean square error, mean value, and hazard function as a basic guideline for exploring software failures.

• Convergence Security Journal
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• v.11 no.4
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• pp.85-91
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• 2011

Due to the large-scale application software syslmls, software reliability, software development has animportantrole. In this paper, software truncated software reliability growth model was proposed based on log-logistic distribution. According to fixed time, the intensity function, the mean value function, the reliability was estimated and the parameter estimation used to maximum likelihood. In the empirical analysis, Poisson execution time model of the existiog model in this area and the log-logistic model were compared Because log-logistic model is more efficient in tems of reliability, in this area, the log-logistic model as an alternative 1D the existiog model also were able to confim that you can use.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.6
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• pp.1409-1413
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• 2013

This paper analyzed the change of subthreshold current for channel doping concentration of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for channel doping concentration, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. As a result, we know the subthreshold current was influenced on parameters of Gaussian function and channel doping concentration for DGMOSFET.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.4
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• pp.217-222
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• 2003

A new two-dimensional analytical model for the potential distribution and drain-induced barrier lowering (DIBL) effect of fully depleted short-channel Silicon-on-insulator (SOI)-MESFET's has been presented in this paper. The two dimensional potential distribution functions in the active layer of the device is approximated as a simple parabolic function and the two-dimensional Poisson's equation has been solved with suitable boundary conditions to obtain the bottom potential at the Si/oxide layer interface. It is observed that for the SOI-MESFET's, as the gate-length is decreased below a certain limit, the bottom potential is increased and thus the channel barrier between the drain and source is reduced. The similar effect may also be observed by increasing the drain-source voltage if the device is operated in the near threshold or sub-threshold region. This is an electrostatic effect known as the drain-induced barrier lowering (DIBL) in the short-gate SOI-MESFET's. The model has been verified by comparing the results with that of the simulated one obtained by solving the 2-D Poisson's equation numerically by using the pde toolbox of the widely used software MATLAB.