• Title/Summary/Keyword: Point Heat Source

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Growth and photoluminescience propeties for $CuInSe_2$ single crystal thin film by Hot Wall Epitaxy (Hot Wall Epitaxy (HWE)법에 의한 $CuInSe_2$ 단결정 박막 성장과 점결함)

  • Hong, Kwang-Joon;Lee, Sang-Youl;Kim, Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.111-112
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    • 2005
  • To obtain the single crystal thin films, $CuInSe_2$, mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wail epitaxy (HWE) system. The source and substrate temperatures were 620$^{\circ}C$ and 410$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobilily of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}$ $cm^{-3}$ and $296cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the CulnSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation E$_g$(T) = 1.1851 eV - ($8.99\times10^{-4}$ ev/K)T$_2$/(T + 153K). After the as-grown $CuInSe_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres the origin of point defects of $CuInSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The nat ive defects of V$_{Cu}$, $V_{Se}$, Cu$_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInSe_2$/GaAs did not form the native defects because In in $CuInSe_2$ single crystal thin films existed in the form of stable bonds.

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The Effect of Thermal Annealing and Growth of $CuGaSe_2$ Single Crystal Thin Film for Solar Cell Application (태양전지용 $CuGaSe_2$ 단결정 박막 성장과 열처리 효과)

  • Hong, Kwang-Joon;You, Sang-Ha
    • Journal of the Korean Solar Energy Society
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    • v.23 no.2
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    • pp.59-70
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    • 2003
  • A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615{\AA}$ and $11.025{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $5.01\times10^{17}cm^{-3}$ and $245cm^2/V{\cdot}s$ at 293K. respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T)=1.7998 eV-($8.7489\times10^{-4}$ eV/K)$T^2$/(T+335K). After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU},\;V_{Se},\;Cu_{int}$ and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2$/GaAs did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

The Developed Study for SMPS to Protect the Noise and Inrush Current at LED Lighting Source (LED 광원에서 잡음 및 돌입전류 방지를 위한 스위칭모드 전원공급 장치 (SMPS) 개발 연구)

  • Chung, Chansoo;Hong, Gyujang;We, Sungbok;Yu, Geonsu;Kim, Mijin
    • KEPCO Journal on Electric Power and Energy
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    • v.2 no.4
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    • pp.577-582
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    • 2016
  • This Study focused on the development of SMPS (Switching Mode Power Supply) to supply the constant votage and current nevertheless LED fluorescent Light generated the electric noise (with Harmonics) and Inrush current at instant time of turn-on and off. Recently, according to the Green policy in government, the LED fluorescent Lighter showed the rapidly increasing tend as indoor and outdoor Lighter. But, because of costs, LED fluorescent Light not considered and neglected the following items; power factor, efficiency, Harmonics and Inrush current. So, we are developed the SMPS about 3 key issues as follows: 1st, power factor and efficiency is 85%. 2nd, the switching noisy by harmonic is minimized. 3rd, the Inrush current at turn on and off time is reduced the minimum 0.3 A after $100{\mu}sec$ on turnon time. The proposed SMPS adjusted by LNK 409 driver (included the high frequency modulation function). Although, the developed SMPS maintained the about 85% of power factor and efficiency. but, the SMPS must be generated low heat by the variation of minute load current at switching timing. To improve the above weak point, the developed SMPS have the feedback monitoring circuit between input side and output side to maintain the power factor and efficiency. Also, we are studied the time-constant of control circuit to output the constant voltage and current nevertheless the load disturbance of LED lighting. The LED fluorescent Light of 46W is checked the above items.

A Brazing Defect Detection Using an Ultrasonic Infrared Imaging Inspection (초음파 열 영상 검사를 이용한 브레이징 접합 결함 검출)

  • Cho, Jai-Wan;Choi, Young-Soo;Jung, Seung-Ho;Jung, Hyun-Kyu
    • Journal of the Korean Society for Nondestructive Testing
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    • v.27 no.5
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    • pp.426-431
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    • 2007
  • When a high-energy ultrasound propagates through a solid body that contains a crack or a delamination, the two faces of the defect do not ordinarily vibrate in unison, and dissipative phenomena such as friction, rubbing and clapping between the faces will convert some of the vibrational energy to heat. By combining this heating effect with infrared imaging, one can detect a subsurface defect in material in real time. In this paper a realtime detection of the brazing defect of thin Inconel plates using the UIR (ultrasonic infrared imaging) technology is described. A low frequency (23 kHz) ultrasonic transducer was used to infuse the welded Inconel plates with a short pulse of sound for 280 ms. The ultrasonic source has a maximum power of 2 kW. The surface temperature of the area under inspection is imaged by an infrared camera that is coupled to a fast frame grabber in a computer. The hot spots, which are a small area around the bound between the two faces of the Inconel plates near the defective brazing point and heated up highly, are observed. And the weak thermal signal is observed at the defect position of brazed plate also. Using the image processing technology such as background subtraction average and image enhancement using histogram equalization, the position of defective brazing regions in the thin Inconel plates can be located certainly.

The Study on the Crystal Growing of Mn-Zn Ferrite Single Crystals by Floating Zone Method (Floating Zone법에 의한 Mn-Zn Ferrite 단결정성장에 관한 연구)

  • 정재우;오근호
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.2 no.1
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    • pp.10-19
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    • 1992
  • Mn - Zn Ferrite has physical properties of the high initial permeability, saturation magnetic flux density, and low loss factor as a representative magnetic material of soft ferrites, in addition the mechanical property is excellent as a single crystal. Therefore it is important electronic components and used for VTR Head. Mn - Zn Ferrite single crystals with the diameter 8mm were grown in atmosphere mixed with $O_2$ and Ar gas by the Floating Zone(FZ) method that impurities can not be incorporated to the crystals because of not-using the crucible to put in the melt, and the sharp temperature gradient results from making a focus at one point utilizing the infrared ray emitted from the halogen lamp as a heat source. During the crystal growing, the highest temperature of melting area was maintained to be $1650^{\circ}C$, growth rate and rotation rate were 10 mm/hr, 20 rpm respectively. The phases and the growth directions of crystals were determined from the analysis of X RD patterns, Laue, TEM diffraction patterns and etch pit shapes were observed by the optical microscope through the chemical etching. The corelation of optimum conditions for acquiring the better crystals was found out with the growth rate, the length and diameter of melt at the interface according to the diameter of feed rod, and the patterns of growing interface also studied.

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Microstructure Evaluation and Wear Resistance Property of Al-Si-X/Al2O3 Composite by the Displacement Reaction in Al-Mg Alloy Melt using High Energy Mechanical Milled Al-SiO2-X Composite Powder (HEMM Al-SiO2-X 복합 분말을 Al-Mg 용탕에서 자발 치환반응으로 제조된 Al-Si-X/Al2O3 복합재료의 조직 및 마멸 특성)

  • Woo, Kee-Do;Kim, Dong-Keon;Lee, Hyun-Bom;Moon, Min-Seok;Ki, Woong;Kwon, Eui-Pyo
    • Korean Journal of Materials Research
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    • v.18 no.6
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    • pp.339-346
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    • 2008
  • Single-crystal $ZnIn_2S_4$ layers were grown on a thoroughly etched semi-insulating GaAs (100) substrate at $450^{\circ}C$ with a hot wall epitaxy (HWE) system by evaporating a $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structures of the single-crystal thin films were investigated via the photoluminescence (PL) and Double-crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by Varshni's relationship, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T2/(T+489K)$. After the as-grown $ZnIn_2S_4$ single-crystal thin films was annealed in Zn-, S-, and In-atmospheres, the origin-of-point defects of the $ZnIn_2S_4$ single-crystal thin films were investigated via the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained from the PL measurements were classified as donor or acceptor types. Additionally, it was concluded that a heat treatment in an S-atmosphere converted $ZnIn_2S_4$ single crystal thin films into optical p-type films. Moreover, it was confirmed that In in $ZnIn_2S_4$/GaAs did not form a native defects, as In in $ZnIn_2S_4$ single-crystal thin films existed in the form of stable bonds.

Economic Analysis of Geothermal Energy and VMD Desalination Hybrid Process (지열에너지와 진공 막 증류법을 활용한 해수담수화 연계형 공정의 경제성 분석)

  • Park, Kiho;Kim, Jin Hyun;Kim, Hyuk Soo;Lee, Kwan-Young;Yang, Dae Ryook;Kim, Kyung Nam
    • Clean Technology
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    • v.20 no.1
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    • pp.13-21
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    • 2014
  • Because of the water scarcity caused by the increase of salinity in the underground water, seawater desalination stands out as one of the most promising solution. As there are so much energy costs in operating desalination plants, new hybrid process which is more effective should be researched. A geothermal VMD (vacuum membrane distillation) hybrid process is a competitive alternative for seawater desalination. Because geothermal energy has significant characteristics of high capacity factor to operate the power plant at full capacity for 24 hour per day, it can be a priority heat source of VMD superior to any other renewable energies such as solar and wind power. In this study, we design a geothermal VMD hybrid process, analyze it economically and finally compare the result with a case of conventional VMD process. Geothermal VMD hybrid process generates $23,822,409 of NPV (net present value) more than the conventional VMD process in case of 5% discount rate. The break-even point between these processes is 5.36 year. Sensitivity analysis indicates that steam cost is the most decisive influence variable to the economic outcome.

Development of Climate Change Adaptation Plan for Kurunegala City, Sri Lanka (스리랑카 Kurunegala시의 기후변화 적응 계획 개발)

  • Reyes, Nash Jett DG.;Cho, Hanna;Geronimo, Franz Kevin F.;Jeon, Minsu;Kim, Leehyung
    • Journal of Wetlands Research
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    • v.21 no.4
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    • pp.354-364
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    • 2019
  • Sri Lanka is an island nation susceptible to climate-related disasters and extreme weather events. Kurunegala City is the developing capital city of the North-Western Province of Sri Lanka. Changes in rainfall patterns and a steadily increasing annual average temperature amounting to 0.69±0.37℃ were observed in the city area. Generally, urban areas are at risk due to the lack of climate change adaptation provisions incorporated in the development plans. This study was conducted to investigate the characteristics of Krunegala City, Sri Lanka and develop an appropriate climate change adaptation plan for the city. Site investigation and qualitative risk assessment were conducted to devise a plan relevant to the climate change adaptation needs of the city. Qualitative risk analyses revealed that drinking water, water resources, and health and infrastructure risks were among the major concerns in Kurunegala City. Low impact development (LID) technologies were found to be applicable to induce non-point source pollutant reduction, relieve urban heat island phenomenon, and promote sound water circulation systems. These technologies can be effective means of alleviating water shortage and reducing urban temperature. The measures and strategies presented in this study can serve as reference for developing climate change adaptation plans in areas experiencing similar adverse effects of climate change.

A Study on Actual Conditions for Prevention of Infections by Dental Hygienists (치과위생사의 감염 예방 실태 조사)

  • Nam, Young-Shin;Yoo, Jung-Sook;Park, Myung-Suk
    • Journal of dental hygiene science
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    • v.7 no.1
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    • pp.1-7
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    • 2007
  • This study aimed to provide basic information on dental hygienists' practicing the prevention of infections by figuring out their actual conditions in dental clinics. The subjects of the study were the dental hygienists who participated in the continuing medical education of Incheon & Gyeonggi-do association and Seoul city association in October and November 2005 and the self-administered surveys were used for the prevention of infections. The results were as below. 1. In terms of education experiences of infection prevention, those who answered "there were" were 72 persons (42.9%) and those who followed the educational route for infection prevention were "through the in-house education from the hospital" and they were 42 persons (58%), which were highest. 2. In terms of the injury experiences, those who answered "there were" were 147 persons (87.5%) and the number of annual injury out of 147 persons with injury experiences was 7.7 time. For the tools that were damaged, 125 persons (75%) damaged the "explorer," which was highest. 3. For the experiences of being infected with contagious diseases, those who answered "there were" were 6 persons (3.6%) and there were four persons for "hepatitis B", one person for "rubella" and one person for "TB." 4. The questions with high practice scores were as in the following: "2. I wash my hands after conducting medical examinations (1.86 points)," "7. I always close the lid of a shot of Novocain after doing local anesthesia (1.86 points)" and "20. I separate and collect the wastes and give them to those who treat accumulated materials (1.85 points)". Meanwhile, the questions with low practice scores were as below: "16. I change my medical gowns (doctor wears) once a day (0.24 point)" and "I wash my medical gowns every time after examining patients with contagious diseases (0.52 points)." 5. The question with high knowledge was as below: "1. The contagion during the dental treatment is determined by source of infection, infection methods, infection routes and the host that is prone to infection (0.95 point)" and the question with the lowest knowledge was "5. HBV(hepatitis B) is destroyed after adding 95oC of heat for more than 5 minutes (0.27 points)." 6. The question with the highest organization-related factors was "I am always ready to use a mask, gloves, etc. if necessary" (0.89 points)" and the question with the lowest score was "There is a guideline that I can refer when I am exposed to dangerous situations related to the contagion in my workplace (0.33 point)." 7. In terms of the equipment conditions of protectors in medical environments, 168 persons for (disposable) mask (100%), 167 persons for disposable gloves (Latex) (99.4%), which meant that most of them were equipped with them. On the contrary, 108 persons (64.3%) are equipped with the protectors for frontal faces, which is the lowest and 165 persons (98.2%) said that they had autoclave in their disinfecting and sterilizing devices.

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