• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.3
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• pp.1-8
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• 2004

The anomalous behavior of the 1/f noise of halo or pocket ion implanted MOSFETs is investigated. The model for the anomalous 1/f noise behaviors of MOSFETs, which consist of inhomogeneous conductance along the channel is improved within a regional approximation as previous works and presented in a fen directly applicable to halo MOSFETs. The presented model reduces to the previous results, discussed in the linear region operation, for small drain bias. Comparisons with experimental results show that the 1/f model based on the regional approach can be applicable for limited ranges, especially for sufficiently large gate bias voltages.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.4 s.334
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• pp.1-8
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• 2005

The increased effective impurity due to the pocket ion implantation is well blown to give rise to a reduction of the effective mobility of halo MOSFETs. However, further decrease of the effective mobility can be observed in pocket implanted MOSFETs above the mobility reduction due to the Coulomb impurity scattering and the gate bias dependency of the effective mobility can also differ from the simple model describing the mobility behavior in terms of the effective impurity. Phonon scattering and surface scattering as well as impurity Coulomb scattering are also shown to be effective in the degradation of the carrier mobility of pocket implanted MOSFETs. Using the 1-D regional approximation the effect of the distribution of the inversion charge density along the channel on the drain current is investigated. The inhomogeneous channel charge distribution due to pocket implantation is also shown to contribute to the further reduction of the effective mobility in halo MOSFETs.