• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.8
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• pp.14-18
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• 2018

Generally. the Ohmic's law is an important factor to increase the conductivity in a micro device. So it is also known that the Ohmic contact in a semiconductor device is import. The PN junction as a structure of semiconductor involves the depletion layer, and this depletion layer induces the non linear electrical properties and also makes the Schottky contact as an intrinsic characteristics of semiconductor. To research the conduction effect of insulators in the semiconductor device, $SiO_2$ thin film and $V_2O_5/SiO_2$ thin film were researched by using the current-voltage system. In the nano electro-magnetic system, the $SiO_2$ thin film as a insulator had the non linear Schottky contact, and the as deposited $V_2O_5$ thin film had the linear Ohmic contact owing to the $SiO_2$ thin film with superior insulator's properties, which decreases the leakage current. In the positive voltage, the capacitance of $SiO_2$ thin film was very low, but that of $V_2O_5$ thin film increased with increasing the voltage. In the normal electric field system, it was confirmed that the conductivity of $V_2O_5$ thin film was increased by the effect of $SiO_2$ thin film. It was confirmed that the Schottky contact of semiconductors enhanced the performance of electrical properties to increased the conductivity.

• Journal of the Earthquake Engineering Society of Korea
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• v.9 no.2 s.42
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• pp.59-69
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• 2005

Employing the classical beam theory for the design of welded steel moment connections has been brought into question by several researchers since the 1994 Northridge earthquake. In this study, the load transfer mechanism in various welded steel moment connections is comprehensively reviewed mainly based on recent studies conducted by the writer. Available analytical and experimental results showed that the load path in almost all the welded steel moment connections is completely different from that as predicted by the classical beam theory. Vertical plates near the connection such as the beam web, the web of the straight haunch, and the rib act as a strut rather than following the classical beam theory. The shear force transfer in the RBS connection is essentially the same as that in PN type connection. Some simplified analytical models that can be used as the basis of a practical design procedure are also presented.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.100-105
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• 1994

Analytical expressions for the breakdown voltage and the optimum drift region length (L$_{dr}$) of SOI (Silicon-On-Insulator) pn diodes are derived in terms of the doping concentration and the thickness of the n- drift region and the buried oxide thickness. The optimum L$_{dr}$ is obtained from the condition that the breakdown voltage of the vertical electric field of n+n- junction equals to the of the lateral electric field of n+n-p+ junction. Analytical results agree reasonably with the numerical simulations using PISCESII.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.12
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• pp.2234-2237
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• 2008

Approximate equations for cylindrical breakdown voltages of planar pn junctions are proposed and verified. The equations show good agreement with the Baliga's results for $r_{j}/Wpp{\leqq}0.3$ and with numerical results for $r_{j}/Wpp{\geqq}0.3$ within 1% error. Sensitivity of the breakdown voltage with respect to the doping concentrations is successfully derived using the approximate equations. The sensitivity formula can be utilized in the area of tolerance design of power semiconductor devices.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.56-59
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• 2000

In this paper, we have made a comparison between secondary ion mass spectroscopy(SIMS) data by the 5kcV-15keV boron implantation and computer simulation results. In order to make electrical activation of implanted carriers, thermal annealing are carried out by RTP method for 30s at 1000$^{\circ}C$ Two dimensional doping concentration distribution from different mask dimensions under inert gas annealing, dry-, and wet-oxidation condition were calculated and simulated with microtec simulator.

• Proceedings of the KIEE Conference
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• 2006.04b
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• pp.369-371
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• 2006

반도체에 이온화 방사선을 조사시키면 소자 내부에서 전자-전공쌍(Electron-Hole Pair, EHP) 생성현상이 나타난나. 이 발성 전하는 방사선원에 따라 반영구적인 전원으로 활용이 가능하다. 본 논문에서는 반감기가 100여년인 Ni-63 베타 방사성 능위원소와 PN 접합형 반도체 소자를 사용한 방사선 전지를 개발하기 위한 연구의 일환으로 효율적인 방사광 변환 법과 전류 발생방법 및 전지회로 구현에 대해서 고찰하였다. 또한 Ni-63 방사선의 베타선 스펙트럼을 계산하고 이에 해당하는 광입력 특성에 대한 실리콘 PN 접합 다이오드의 반응특성을 태양광 시뮬레이션용 소프트웨어를 사용하여 검증하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.121-121
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• 2008

We propose a novel nanomaterial-based pn diode which constructed with an n-type ZnO nanowire (NW) and a p-type HgTe nanoparticle (NP) thin film. The photo current characteristics of a ZnO NW, a HgTe NP thin film and pn diode constructed with a ZnO NW and a HgTe NP thin film were investigated under illumination of the 325 nm and 633 nm wavelength light. The conductivities of a ZnO NW exposed to the 325 nm and 633 nm wavelength light increased, while the photocurrents taken from the HgTe NP thin film was very close to the dark currents. Moreover, The pn diode exhibited the rectifying characteristics of the dark current and of the photocurrent excited by the 633 nm wavelength light. In contrast, the ohmic characteristics for the photocurrent were observed due to the junction barrier lowering in the conduction band of the ZnO nanowire under the illumination of the 325 nm wavelength light.

• Industry Promotion Research
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• v.3 no.1
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• pp.1-5
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• 2018

$SnO_2$ films were annealed in a vaccum atmosphere conditions to research the temperature dependency of current-voltage characteristics in according to the bonding structures. The $SnO_2$ film annealed in a vacuum became an amorphous structure but films annealed in an atmosphere condition had a crystal structure. The defects or depletion layer were formed by the electron-hole combination after annealing processes, and the electrical properties were changed depending on the crystal structure, binding energy and the variation of carriers. $SnO_2$ became more crystal-structural with increasing the annealing temperature, and the current increased at $SnO_2$ film annealed at $150^{\circ}C$ with Schottky current.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.934_935
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• 2009

LED는 기존조명에 비해 친환경적이고, 긴 수명을 갖기 때문에 현재에 이르러 광고조명이나 백라이트 유닛 그리고 실내 외 조명으로 각광받기 시작했다. LED를 조명으로 사용 함에 있어서 LED의 PN 접합부에서 발생하는 접합온도 상승을 고려해야한다. 접합온도 상승은 LED의 광 출력과 수명의 감소, 광색의 변화를 초래하기 때문에 광 출력 및 광색을 유지시키고, 수명을 예측하기 위해서는 LED의 접합온도를 일정하게 유지시키는 LED 전용의 전력제어 시스템이 필요하다. 본 논문은 LED 접합온도 측정 시스템과 구동전원을 설계 및 제작하였으며, 측정된 온도를 구동전원에 궤환시켜 접합온도를 일정하게 유지시키는 시스템을 제안하였다.

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.179-180
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• 2008

Approximate equations for cylindrical breakdown voltages of planar pn junctions are proposed and verified. The equations show good agreement with the Baliga's results for rj/Wpp${\leq}0.3$ and with numerical results for rj/Wpp${\geq}0.3$ within 1 % error. Sensitivity of the breakdown voltage with respect to the doping concentrations is successfully derived using the approximate equations. The sensitivity formula can be utilized in the area of tolerance design of power semiconductor devices.