• Title/Summary/Keyword: Plating conditions

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Influence of counter anions on metal separation and water transport in electrodialysis treating plating wastewater

  • Oh, Eunjoo;Kim, Joohyeong;Ryu, Jun Hee;Min, Kyung Jin;Shin, Hyun-Gon;Park, Ki Young
    • Membrane and Water Treatment
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    • v.11 no.3
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    • pp.201-206
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    • 2020
  • Electrodialysis (ED) is used in wastewater treatment, during the processing and recovery of beneficial materials, to produce usable water. In this study, sulfate and chlorine ions, which are the anions majorly used for electroplating, were studied as factors affecting the recovery of copper, nickel and water from wastewater by electrodialysis. Although the removal rates of copper and nickel ions were slightly higher with the use of chlorine ions than of sulfate ions, the removal efficiencies were above 99.9% under all experimental conditions. The metal ions of the plating wastewater flowed through the ion exchange membrane of the diluate tank and the concentrate tank while all the water moved together due to electro-osmosis. The migration of water from the diluate tank to the concentrate tank was higher in the presence of a monovalent chloride ion compared to that of a divalent sulfate ion. When sulfate was the anion used, the recoveries of copper and nickel increased by about 25% and 30%, respectively, as compared to the chloride ion. Therefore, when divalent ions such as sulfate are present in the electrodialysis, it is possible to reduce the movement amount of water and highly concentrate the copper and nickel in the plating wastewater.

COD, Ni and P Removal Characteristics for Plating Wastewater According to Different NaOCl Reaction Times in BPC Unit Process (도금폐수처리공정 중 BPC 단위공정 내 NaOCl 반응시간에 따른 도금폐수의 COD, Ni 및 P 제거특성)

  • Jung, Byung-Gil;Lee, Seung-Won;Yun, Kwon-Gam;Choi, Young-Ik
    • Journal of Environmental Science International
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    • v.30 no.1
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    • pp.69-76
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    • 2021
  • The purposes of this study were to evaluate the removal characteristics of COD, Ni, and P and to derive appropriate operating conditions for the plating wastewater according to NaOCl reaction time and pH operating conditions in the BPC unit process during the plating wastewater treatment process. As a results of evaluating the removal characteristics for raw wastewater by each BPC unit process, the removal efficiencies of COD, Ni and P in BPC 1-1 unit process were 72.8%, 99.1%, and 100.0%. Therefore, the proper reaction time of NaOCl was derived as 21.1 minutes. In order to maintain the +800 mV ORP and the reaction time of 20 minutes, the temporary injection and continuous injection of NaOCl in the BPC unit process were 13.7 mL and 18.7 mL, respectively. It was found that the temporary injection method of NaOCl reduced the chemical cost by 36.5% compared to the continuous injection method. Also, Ni showed the highest removal efficiency of 97.8% at pH 10.5. On the other hand, P showed a removal efficiency of 57.4% at pH 10.0.

Leaching Characteristics of Heavy Metals of Bottom Ash and Plating Sludge with Environmental Conditions in Landfill (매립지 환경조건을 고려한 소각재와 도금슬러지의 중금속 용출특성)

  • 손희정;김은호;이용희
    • Journal of environmental and Sanitary engineering
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    • v.13 no.2
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    • pp.121-127
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    • 1998
  • This study was to understand leaching characteristics with pH controlling agents and Temp. control, and investigate leaching characteristics with pH control from opening a leaching test to an end for reassessing leaching test of heavy metals with environmental conditions in landfill. Because leaching of heavy metals was increased in low pH, pH must control for leaching in existing leaching test. Generally, regulation time(6hr) of leaching was confirmed reasonablely, except for Cu in plating sludge. In pH controlling solution, there was nearly not difference between Acetic acid and HCl and if considering Cu, the former was appropriate. In a part of heavy metal, leaching rate was increased in high Temp., and normal Temp. in existing leaching test would be revaluated.

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Effect of Additives and Plating Conditions on Sn-Pb Alloy Film of Semiconductor Formed by High Speed Electroplating (전해도금에 의해 형성된 반도체 금속도금용 주석-납 합금피막의 첨가제 및 전해조건의 영향)

  • 정강효;김병관;박상언;김만;장도연
    • Journal of the Korean institute of surface engineering
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    • v.36 no.1
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    • pp.34-41
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    • 2003
  • Effects of additives and plating conditions of high speed electroplating were investigated. The Sn content in electrodeposit was highly decreased with increasing current density from $10A/dm^2$ to $50A/dm^2$, and the current efficiency on the cathode was decreased. The carbon content in the electrodeposit was decreased with increasing current density from $10A/dm^2$ to $30A/dm^2$, however the carbon content was highly increased in the range of $40A/dm^2$$∼50A/dm^2$. The formation of tetravalent tin and stannic oxide sludge was prevented by the addition of gallic acid in the bath. The changing of Sn content in the electrodeposit is caused by the addition of gallic acid.

Optimization of Electrolysis Using Sacrificial Electrode for the Treatment of Electroless Nickel Plating Wastewater (희생전극을 이용한 무전해 니켈 도금 폐수의 전기분해처리 최적화)

  • Kim, Young-Shin;Jeon, Byeong-Han;Cho, Soon-Haing
    • Journal of Korean Society of Environmental Engineers
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    • v.37 no.4
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    • pp.204-209
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    • 2015
  • The effluent limit of nickel from electroplating wastewater has been strengthened from 5 mg/L to 3 mg/L from 2014. However, currently applied treatment process for nickel plating wastewater is unable to meet the effluent limit, most of the treatment concept conducted by treatment plant is dilution with other metal bearing wastewater. This can cause very significant impact to the environment of nickel contamination. With this connection, the feasibility test has been conducted with the use of electrolysis by using sacrificial electrodes. Experiments were conducted in synthetic and electroless nickel plating wastewater. Optimal condition of current density, pH were derived from the synthetic wastewater. It was found that the removal efficiency of nickel exceeded 94% at the operation condition of at pH 9 and the current density of $1{\sim}2mA/cm^2$. At this conditions, the iron sludge was generated very low amount. However, it was unsuccessful to meet the effluent limit by applying these treatment conditions to the real electroplating wastewater. This can be explained due to the matrix effect of other metals and anions contained real electroplating wastewater. From the result of further study, the optimal conditions for the real wastewater treatment were found out to be at pH 9, current density $6{\sim}7mA/cm^2$, for 5 minutes of operating time. At these conditions, 88% removal of nickel was achieved, which results the residual nickel concentration was below 3 mg/L.

Fabrication and Characteristics of Electroplated Sn-0.7Cu Micro-bumps for Flip-Chip Packaging (플립칩 패키징용 Sn-0.7Cu 전해도금 초미세 솔더 범프의 제조와 특성)

  • Roh, Myong-Hoon;Lee, Hea-Yeol;Kim, Wonjoong;Jung, Jae Pil
    • Korean Journal of Metals and Materials
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    • v.49 no.5
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    • pp.411-418
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    • 2011
  • The current study investigates the electroplating characteristics of Sn-Cu eutectic micro-bumps electroplated on a Si chip for flip chip application. Under bump metallization (UBM) layers consisting of Cr, Cu, Ni and Au sequentially from bottom to top with the aim of achieving Sn-Cu bumps $10\times10\times6$ ${\mu}m$ in size, with 20${\mu}m$ pitch. In order to determine optimal plating parameters, the polarization curve, current density and plating time were analyzed. Experimental results showed the equilibrium potential from the Sn-Cu polarization curve is -0.465 V, which is attained when Sn-Cu electro-deposition occurred. The thickness of the electroplated bumps increased with rising current density and plating time up to 20 mA/$cm^2$ and 30 min respectively. The near eutectic composition of the Sn-0.72wt%Cu bump was obtained by plating at 10 mA/$cm^2$ for 20 min, and the bump size at these conditions was $10\times10\times6$ ${\mu}m$. The shear strength of the eutectic Sn-Cu bump was 9.0 gf when the shearing tip height was 50% of the bump height.

Structure and Growth of Tin Whisker on Leadframe with Lead-free Solder Finish (무연솔더 도금된 리드프레임에서 Sn 위스커의 성장과 구조)

  • Kim Kyung-Seob;Leem Young-Min;Yu Chong-Hee
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.3 s.32
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    • pp.1-7
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    • 2004
  • Tin plating on component finishes may grow whiskers under certain conditions, which may cause failures in electronics equipment. To protect the environment, 'lead-free' among component finishes is being promoted worldwide. This paper presents the evaluation results of whiskers on two kinds of lead-free plating materials at the plating temperature and under the reliability test. The rising plating temperature caused increasing the size of plating grain and shorting the growth of whisker. The whisker was grown under the temperature cycling the bent type in matt Sn plating and striated type in malt Sn-Bi. The whisker growth in Sn-Bi plating was shorter than that in Sn plating. In FeNi42 leadframe, the $7.0{\~}10.0{\mu}m$ diameter and the $25.0{\~}45.0{\mu}m$ long whisker was grown under 300 cycles. In the 300 cycles of Cu leadframe, only the nodule(nuclear state) grew on the surface, and in the 600 cycles, a $3.0{\~}4.0{\mu}m$ short whisker grew. After 600 cycles, the ${\~}0.34{\mu}m$ thin $Ni_3Sn_4$ formed on the Sn-plated FeNi42. However, we observed the amount of $0.76{\~}1.14{\mu}m$ thick $Cu_6Sn_5$ and ${\~}0.27{\mu}m$ thin $Cu_3Sn$ intermetallics were observed between the Sn and Cu interfaces. Therefore, the main growth factor of a whisker is the intermetallic compound in the Cu leadframe, and the coefficient of thermal expansion mismatch in FeNi42.

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Selective Contact Hole Filling by Electroless Ni Plating (무전해Ni도금에 의한 선택적 CONTACT HOLE 충진)

  • 김영기;우찬희;박종완;이원해
    • Proceedings of the Materials Research Society of Korea Conference
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    • 1992.05b
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    • pp.26-27
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    • 1992
  • The effect of activation and electroless nickel plating conditions on contact properties were investigated for selective electroless nickel plating of Si farers in order to obtain an optimum condition of contact hole filling. According to RCA prosess, p-type si 1 icon (100) surface was cleaned out and activated. The effects of temperture, DMAB concentration, time, and stirring iwere investigated for activation of p-type Si(100) surface. The optimal activation condition obtained was 0.5M HF, 1mM PdCl$_2$, 2mM EDTA, 7$0^{\circ}C$, 90sec under ultrasonic vibration. In electroless nickel plating, the effect of temperature, DMAB concentration, pH, and plating ti me were studied. The optimal plating condition found was 0. 10M NiS0$_4$.$H_2O$, 0.lIM Citrate, pH 6.8, 6$0^{\circ}C$, 30 minutes. The contact resistence of fi]ms wascomparatively low. It took 30 minutes to obtain 1$\mu$m thick film with 8$\mu$M DMAB concentration. The film surface roughness was improved with increasing temperature and decreasing pH of the plating solution. The best quality of the film was obtained with the condition of temperature 6$0^{\circ}C$ and pH 6.8. The micro-victors hardness of film was about 600Hv and was decreased wi th increasing particle size of plating layer.

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