• Journal of the Korean institute of surface engineering
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• v.50 no.4
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• pp.244-250
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• 2017

Effects of plating conditions (dispersant concentration, plating time, and ultrasonication) on electroless Cu plating on SiC fabric woven by crossing of SiC continuous fibers vertically were studied. The ultrasonic dispersion treatment not only did not improve the dispersion of the SiC fibers, but also did not change the plating thickness. The ultrasonication in the pretreatment step of electroless plating did not improve the dispersion of the fibers, while the ultrasonication in the plating step enhanced the dispersion of the fibers and decreased the thickness of the Cu films. It was possible to control the thickness of the Cu coating layer as well as the dispersion of the fibers in the fabric by changing the plating conditions such as dispersant concentration, plating time, and ultrasonication, but it was very difficult to coat copper on the intersection of vertical fibers in the fabric.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.161-167
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• 2003

In order to investigate the effects of pulse plating conditions on the electrodeposition of trivalent chromium, electroplating experiments from bath with low concentration of trivalent chromium were performed. The variation of current efficiency of chromium electroplating with the electroplating conditions was explained. The maximum current efficiency of pulse plating is 6.4 times as high as that of direct plating at the same mean current density The nodular size increased with pulse plating time and the pulse frequency.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.8
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• pp.88-95
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• 2008

Young's modulus of electroplated nickel thin film is systematically investigated using the resonance method of atomic force microscope. Thin layers of nickel to be measured are electroplated onto the surface of an AFM silicon cantilever and Young's modulus of plated nickel film is investigated as a function of process conditions such as the plating temperature and applied current density. It is found that Young's modulus of plated nickel thin film is as high as that of bulk nickel at low plating temperature or low current density, but decreases with increasing plating temperature or current density. The results imply that the plating rate increases as increasing the plating temperature or current density, therefore, slow plating rate produces a dense plating material due to the sufficient time fur nickel ions to form a dense coating.

• Journal of the Korean institute of surface engineering
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• v.36 no.3
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• pp.263-271
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• 2003

Optimal conditions of electroless nickel plating in acid baths has been studied for industrial applications of a developed EN solution. The phosphorus content in the deposition ranges from 8 to $12\;wt.\%$. The investigated EN plating parameters are ion concentrations of nickel and hypophosphite, concentration of reducing and complexing agent, temperature, and pH. The average plating rate of Ni-P deposition was ca. $14{\mu}m/h$. The EN solution used shows a deposition rate of $10{\mu}m/h$ up to seven metal turnovers.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.75-80
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• 2004

In copper metallization, resistivity of copper seed layer is very important. Conventionally MOCVD has been used for this purpose however electroless copper plating is simple process and the resistivity of copper deposit is less than that of copper prepared by MOCVD. In this study electroless copper plating was conducted on different substrate to find optimum conditions of electroless copper plating for electronic applications. To find optimum conditions, the effects and selectivity of activation method on several substrates were investigated. The effects of copper bath composition on morphology were investigated. The effects of pH and stabilizer on deposition rate were also investigated. The optimum pH of the bath was 12 with addition of stabilizer. The resistivity of copper was decreased with addition of stabilizer and alter heat treatment.

• Journal of the Korean institute of surface engineering
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• v.30 no.2
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• pp.104-110
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• 1997

Conventional hexavlent chromium electroplating baths deposit the matal at low cathode efficiency and have poor covering and throwing power. The processs also generate hazardous wastes. To overcome many of the disadvantages of hexavalent chromium plating the use of trivalent chromium has advocted. After Yoshida, who first studied trivalent chromium plating, using ammonium sulfate and urea, there are numerous report describing the trivalent chromium electropating process using complexing agents. This study investigaten trivalent chromium plating electrolyte solutious containing formate as a complexing agent and ammouim chloride for conducting agent. The effects of composition and operating conditions on deposits and current efficiencies were investigated in trivalent chromium plating baths by analyzing the relationship pulse conditions and surface morphology The surface morphology of the deposits was observed by SEM. pulse electrolysis has been effective on obtaining a smooth with high current efficiency comparing with D.C. electrolysis in trivalent chromium solution.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.2
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• pp.51-54
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• 2019

The electrodeposition of rhodium (Rh) on silicon substrate at different current conditions were investigated. The cracks were found at high current density during the direct current (DC) plating. The pulse current (PC) plating were applied to avoid the formation of cracks on the deposits. Off time in the pulse plating relieved the residual stress of the Rh deposits and consequently the current conditions for the crack-free Rh deposits were obtained. Optimum pulse current (PC) condition is 5:5 (on:off) for the crack-free Rh electroplating.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.658-663
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• 1998

Ferrite plating enables were grown by ferrite by plating method in solution at low temperature(<10$0^{\circ}C$). This faciltates the fabrication of new ferrite thin film devices using non- heat-resistant materials(plastic, GaAs ect) as substrates. Combining the ferrite plating with sonochemistry, application of power ultrasonic waves to stimulate chemical reactions, the crystallinity and qualities of films were improved. Modifying the reactions cell and plating conditions further improved the film quality.

• Journal of Power System Engineering
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• v.5 no.2
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• pp.71-78
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• 2001

Using sodium hypophosphite as reducing agent, bath composition and plating condition of electroless copper plating on plating rate have been studied. The followings were determined as optimum, bath composition; $CuSO_4\;0.025M,\;NiSO_4\;0.002M,\;NaH_2PO_2\;0.4M$, sodium citrate 0.06M, $H_3BO_3$ 0.6M, thiourea or 2-MBT $0.2mg/{\ell}$, and operation conditions; pH $9{\sim}10$ at bath temperature rage of $60{\sim}70^{\circ}C$. A small amount of nickel ion($Ni^{2+}/Cu^{2+}$=0.002/0.025) to the hypophosphite reduced solution promotes autocatalysis and continuous plating. An additive such as thiourea or 2-MBT of a small amount($0.2mg/{\ell}$) can be used to stabilize the solution without changing plating rate much. The attivation energy between $20^{\circ}C\;and\;70^{\circ}C$ were calculated to be 11.3kcal/mol for deposition weight. Plating reaction had been ceased by the adjustment of pH above 13, temperature higher than $90^{\circ}C\;and\;under\;20^{\circ}C$. Deposited surface became worse in the case of increment of bath temperature above $80^{\circ}C$.

• Journal of the Optical Society of Korea
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• v.19 no.3
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• pp.217-221
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• 2015

Developing a metallization that has low cost and high efficiency is essential in solar-cell industries, to replace expensive silver-based metallization. Ni/Cu two-step metallization is one way to reduce the cost of solar cells, because the price of copper is about 100 times less than that of silver. Alkaline electroless plating was used for depositing nickel seed layers on the front electrode area. Prior to the nickel deposition process, 2% HF solution was used to remove native oxide, which disturbs uniform nickel plating. In the subsequent step, a nickel sintering process was carried out in $N_2$ gas atmosphere; however, copper was plated by light-induced plating (LIP). Plated nickel has different properties under different bath conditions because nickel electroless plating is a completely chemical process. In this paper, plating bath conditions such as pH and temperature were varied, and the metal layer's structure was analyzed to investigate the adhesion of Ni/Cu metallization. Average adhesion values in the range of 0.2-0.49 N/mm were achieved for samples with no nickel sintering process.