• Title/Summary/Keyword: Plastic Chip, Thermal Bonding

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Fabrication of plastic CE (capillary electrophoresis) microchip by hot embossing process (핫 엠보싱 공정을 이용한 플라스틱 CE(capillary electrophoresis) 마이크로 칩의 제작)

  • Cha Nam-Goo;Park Chang-Hwa;Lim Hyun-Woo;Park Jin-Goo
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.06a
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    • pp.1140-1144
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    • 2005
  • A plastic-based CE (capillary electrophoresis) microchip was fabricated by hot embossing process. A Si mold was made by wet etching process and a PMMA wafer was cut off from 1mm thick PMMA sheet. A micro-channel structure on PMMA substrate was produced by hot embossing process using the Si mold and the PMMA wafer. A vacuum assisted thermal bonding procedure was employed to seal an imprinted PMMA wafer and a blank PMMA wafer. The results of microscopic cross sectional images showed dimensions of channels were well preserved during thermal bonding process. In our procedure, the deformation amount of bonding process was below 1%. The entire fabrication process may be very useful for plastic based microchip systems.

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Contact Resistance and Thermal Cycling Reliability of the Flip-Chip Joints Processed with Cu-Sn Mushroom Bumps (Cu-Sn 머쉬룸 범프를 이용한 플립칩 접속부의 접속저항과 열 싸이클링 신뢰성)

  • Lim, Su-Kyum;Choi, Jin-Won;Kim, Young-Ho;Oh, Tae-Sung
    • Korean Journal of Metals and Materials
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    • v.46 no.9
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    • pp.585-592
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    • 2008
  • Flip-chip bonding using Cu-Sn mushroom bumps composed of Cu pillar and Sn cap was accomplished, and the contact resistance and the thermal cycling reliability of the Cu-Sn mushroom bump joints were compared with those of the Sn planar bump joints. With flip-chip process at a same bonding stress, both the Cu-Sn mushroom bump joints and the Sn planar bump joints exhibited an almost identical average contact resistance. With increasing a bonding stress from 32 MPa to 44MPa, the average contact resistances of the Cu-Sn mushroom bump joints and the Sn planar bump joints became reduced from $30m{\Omega}/bump$ to $25m{\Omega}/bump$ due to heavier plastic deformation of the bumps. The Cu-Sn mushroom bump joints exhibited a superior thermal cycling reliability to that of the Sn planar bump joints at a bonding stress of 32 MPa. While the contact resistance characteristics of the Cu-Sn mushroom bump joints were not deteriorated even after 1000 thermal cycles ranging between $-40^{\circ}C$ and $80^{\circ}C$, the contact resistance of the Sn planar bump joints substantially increased with thermal cycling.

Fabrication of PMMA Micro CE Chip Using IPA Assisted Low-temperature Bonding (IPA 저온 접합법을 이용한 PMMA Micro CE Chip의 제작)

  • Cha, Nam-Goo;Park, Chang-Hwa;Lim, Hyun-Woo;Cho, Min-Soo;Park, Jin-Goo
    • Korean Journal of Materials Research
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    • v.16 no.2
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    • pp.99-105
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    • 2006
  • This paper reports an improved bonding method using the IPA (isopropyl alcohol) assisted low-temperature bonding process for the PMMA (polymethylmethacrylate) micro CE (capillary electrophoresis) chip. There is a problem about channel deformations during the conventional processes such as thermal bonding and solvent bonding methods. The bonding test using an IPA showed good results without channel deformations over 4 inch PMMA wafer at $60^{\circ}C$ and 1.3 bar for 10 minutes. The mechanism of IPA bonding was attributed to the formation of a small amount of vaporized acetone made from the oxidized IPA which allows to solvent bonding. To verify the usefulness of the IPA assisted low-temperature bonding process, the PMMA micro CE chip which had a $45{\mu}m$ channel height was fabricated by hot embossing process. A functional test of the fabricated CE chip was demonstrated by the separation of fluorescein and dichlorofluorescein. Any leakage of liquids was not observed during the test and the electropherogram result was successfully achieved. An IPA assisted low-temperature bonding process could be an easy and effective way to fabricate the PMMA micro CE chip and would help to increase the yield.

Development of a Chip Bonding Technology for Plastic Film LCDs

  • Park, S.K.;Han, J.I.;Kim, W.K.;Kwak, M.K.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.89-90
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    • 2000
  • A new technology realizing interconnection between Plastic Film LCDs panel and a driving circuit was developed under the processing condition of low temperature and pressure with ACFs developed for Plastic Film LCDs. The conduction failure of interconnection of the two resulted from elasticity, low thermal resistance and high thermal expansion of plastic substrates. Conductive particles with elasticity similar to the plastic substrate did not damaged a ITO electrode on plastic substrates, and low temperature and pressure process also did not deform the surface of plastic substrates. As a result highly reliable interconnection with minimum contact resistance was accomplished.

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Thermo-mechanical Behavior of Wire Bonding PBGA Packages with Different Solder Ball Grid Patterns (Wire Bonding PBGA 패키지의 솔더볼 그리드 패턴에 따른 열-기계적 거동)

  • Joo, Jin-Won
    • Journal of the Microelectronics and Packaging Society
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    • v.16 no.2
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    • pp.11-19
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    • 2009
  • Thermo-mechanical behaviors of wire-bond plastic ball grid array (WB-PBGA) package assemblies are characterized by high-sensitivity moire interferometry. Using the real-time moire setup, fringe patterns are recorded and analyzed for several temperatures. Experiments are conducted for three types of WB-PBGA package that have full grid pattern and perimeter pattern with/without central connections. Bending deformations of the assemblies and average strains of the solder balls are investigated, with an emphasis on the effect of solder interconnection grid patterns, Thermal strain distributions and the location of the critical solder ball in package assemblies are quite different with the form of solder ball grid pattern. For the WB-PBGA-PC, The largest of effective strain occurred in the inner solder ball of perimeter closest to the chip solder balls. The critical solder ball is located at the edge of the chip for the WB-PBGA-FG, at the most outer solder ball of central connections for the WB-PBGA-P/C, and at the inner solder ball closest to the chip for the WB-PBGA-P.

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