• 제목/요약/키워드: Plasma x-ray

검색결과 1,009건 처리시간 0.032초

CORONAL TEMPERATURE AS AN AGE INDICATOR

  • Sung, Hwan-Kyung;Bessell, M.S.;Sana, Hugues
    • 천문학회지
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    • 제41권1호
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    • pp.1-6
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    • 2008
  • The X-ray spectra of late type stars can generally be well fitted by a two temperature component model of the corona. We find that the temperatures of both components are strong functions of stellar age, although the temperature of the hotter plasma in the corona shows a larger scatter and is probably affected by the activity of stars, such as flares. We confirm the power-law decay of the temperature of the hot plasma, but the temperature of the cool plasma component decays linearly with log(age).

유도결합형 플라즈마를 사용한 반응성 마그네트론 스퍼터링에 의한 ZnO 박막 증착 및 특성분석 (Characterization and deposition of ZnO thin films by Reactive Magnetron Sputtering using Inductively-Coupled Plasma (ICP))

  • 김동선
    • 반도체디스플레이기술학회지
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    • 제10권2호
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    • pp.83-89
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    • 2011
  • In this study, we investigated the effects of shutter control by Reactive Magnetron Sputtering using Inductively-Coupled Plasma(ICP) for obtaining ZnO thin films with high purity. The surface morphologies and structure of deposited ZnO thin films were characterized using Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and X-ray Diffractometer (XRD). Also, optical and chemical properties of ZnO thin films were analyzed by Spectroscopic Ellipsometer (SE) and X-ray Photoelectron spectroscopy (XPS). As a result, it observed that ZnO thin films grown at reactive sputtering using shutter control and ICP were higher density, lower surface roughness, better crystallinity than other conventional sputtering deposition methods. For obtaining better quality deposition ZnO thin films, we will investigate the effects of substrate temperature and RF power on shutter control by a reactive magnetron sputtering using inductively-coupled plasma.

고전압 방전 플라즈마에 의해 합성한 질화탄소 박막의 열처리 효과 (Effect of Annealing on Carbon Nitride Films Prepared by High Voltage Discharge Plasma)

  • 김종일
    • 한국전기전자재료학회논문지
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    • 제15권5호
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    • pp.455-459
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    • 2002
  • I have investigated the effects of annealing on a polymeric $\alpha-C_3N_{4.2}$ at high pressure and temperature in the presence of seeds of crystalline carbon nitride films prepared by a high voltage discharge plasma. The samples were evaluated by x-ray photoelectron spectroscopy (XPS), infrared spectroscopy, Auger electron spectroscopy and x-ray diffraction(XRD). Notably, XPS studies of the film composition before and after annealing demonstrate that the nitrogen composition in $\alpha-C_3N_{4.2}$ material initially containing more than 58% nitrogen decreases during the annealing process and reaches a common, stable composition of ~43%. XPS analysis also shows that the nitrogen composition in the annealed films without polymeric $\alpha-C_3N_{4.2}$ was reduced from 35% to 17%. Furthermore the concentration of the sp$^3$bonded phase increased with the increment of the annealing temperature.

고도처리를 위한 금속티타늄 고정화광촉매기술평가 (Evaluation of Photocatalysis-Fixed Using Titanium for Advanced Wastewater Treatment)

  • 장준원;민지은;박재우
    • 한국방재학회:학술대회논문집
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    • 한국방재학회 2008년도 정기총회 및 학술발표대회
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    • pp.815-818
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    • 2008
  • Titanium was oxidized with oxygen plasma and calcinated with rapid thermal annealing for degradation of humic acid dissolved in water. Titania photocatalytic plate was produced by titanium surface oxidized with oxygen plasma by Plasma Enhanced Chemical Vapor Deposition(PECVD). RF-power and deposition condition is controlled under 100 W, 150 W, 300 W and 500 W. Treatment time was controlled by 5 min and 10 min. The film properties were evaluated by the X-ray Photoelectron Spectroscopy (XPS) and X-Ray Diffraction (XRD). From the experimental results, we found the optimal condition of titania film which exhibited good performance. Moreover photocatalytic capacity was about twice better than thermal spray titania film, and also as good as titania powder.

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RAMBE를 사용하여 Si 기판 위에 성장된 AIN 박막의 결정성 분석 (Microstructural ananalysis of AlN thin films on Si substrate grown by plasma assisted molecular beam epitaxy)

  • 홍성의;한기평;백문철;조경익;윤순길
    • 한국진공학회지
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    • 제10권1호
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    • pp.22-26
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    • 2001
  • Plasma assisted molecular beam epitaxy(PAMBE)를 사용하여 Si 기판위에 성장시킨 AlN 박막에 대하여 성장온도 및 기판의 방향성에 따른 박막의 결정성 변화를 분석하였다. Reflection high energy electron diffraction(RHEED) 패턴을 이용하여 성장 중의 결정성을 관찰하였고, 성장 후에는 X-ray diffraction(XRD), double crystal X-ray diffraction(DCXD), transmission electron microscopy/diffraction(TEM/TED)분석을 하였다. $850^{\circ}C$이상의 온도에서 Si(100)위에 성장된 AlN박막은 육방정계의 c축 방향으로 우선 배향되어 있음을 확인하였으며 Si(111)위에 성장된 AlN박막의 경우 AlN(0001)/Si(111), AlN(1100)/Si(110), AlN(1120)/Si(112)의 결정방위를 가지고 성장하였음을 확인하였다. 또한 Si(111) 기판 위에서는 전위와 적층결함 등 많은 결정결함에 의해 DCD패턴의 반치폭이 2$\theta$=$36.2^{\circ}$에서 약 3000arcsec에 이르는 등 결정성은 좋지 않았으나 AlN박막이 단결정으로 성장된 것으로 나타났다.

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GROUND LEVEL ENHANCEMENTS IN RELATION WITH ENERGETIC SOLAR FEATURES AND DISTURBANCES IN SOLAR WIND PLASMA PARAMETERS

  • VERMA, PYARE LAL
    • 천문학논총
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    • 제30권2호
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    • pp.47-51
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    • 2015
  • Ground Level Enhancements (GLEs) in cosmic ray intensity observed during the period of 1997-2012 have been studied with energetic solar features and disturbances in solar wind plasma parameters and it is seen that all the GLEs have been found to be associated with coronal mass ejections, hard X-ray solar flares and solar radio bursts. All the GLEs have also been found to be associated with sudden jumps in solar proton flux of energy of ${\geq}60Mev$. A positive correlation with correlation coefficient of 0.48 has been found between the maximum percentage intensity (Imax%) of Ground Level Enhancements and the peak value of solar proton flux of energy (${\geq}60Mev$). All the Ground Level Enhancements have been found to be associated with jumps in solar wind plasma velocity (JSWV) events. A positive correlation with correlation coefficient of 0.43 has been found between the maximum percentage intensity (Imax %) of Ground Level Enhancements and the peak value of solar wind plasma velocity of associated (JSWV) events. All the Ground Level Enhancements have been found to be associated with jumps in solar wind plasma pressure (JSWP) events. A positive correlation with correlation coefficient of 0.67 has been found between the maximum percentage intensity (Imax %) of Ground Level Enhancements and the peak value of solar wind plasma pressure of associated (JSWP) events and of 0.68 between the maximum percentage intensity (Imax %) of Ground Level Enhancements and the magnitude of the jump in solar wind plasma pressure of associated (JSWP) events.

Infrared Supernova Remnants and Their Infrared to X-ray Flux Ratios

  • Koo, Bon-Chul;Lee, Jae-Joon;Seok, Ji-Yeon;Jeong, Il-Gyo;Kim, Hyun-Jeong
    • 천문학회보
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    • 제40권2호
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    • pp.34.3-35
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    • 2015
  • Recent high-resolution infrared space missions have revealed supernova remnants (SNRs) of diverse morphology in far infrared (FIR), often very different from their X-ray appearance. This suggests that the FIR emission from SNRs could be of different origins. For a sample of 20 Galactic SNRs, we examine the correlation between their FIR and X-ray properties and explore the origin of the FIR emission. We find that the SNRs with very different FIR and X-ray morphology have relatively large infrared-to-X-ray (IRX) flux ratios. We argue that the FIR emission in these SNRs is likely mainly from dust grains radiatively-heated by shock radiation. For SNRs with similar IR and X-ray morphology, the FIR emission of which is probably mostly from dust grains collisionally heated by hot plasma, we compare their IRX flux ratios with theoretical ratios from a model incorporating time-dependent dust destruction and non-equilibrium ionization cooling behind SNR shock, and discuss the implications of our result.

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Material Design for the Fabrication of Barrier Ribs with High Aspect Ratio of Plasma Display Panel by X-ray Lithography

  • Ryu, Seung-Min;Yang, Dong-Yol;So, Jae-Yong;Park, Lee-Soon
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.989-992
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    • 2008
  • X-ray lithography is one of the most powerful processes in the fabrication of nano/micro structures with a high aspect ratio. This process enables the fabrication of ultra-thin barrier ribs for PDP using X-ray sensitive paste. In this paper, organic material including photo-monomers, photo-oligomers, binder polymer and additives as well as inorganic powders with different size were optimized to fabricate high aspect ratio barrier rib pattern for PDP.

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Laboratory Astrophysics using Intense X-ray from Free Electron Lasers

  • Chung, Moses
    • 천문학회보
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    • 제42권2호
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    • pp.65.4-65.4
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    • 2017
  • The laboratory astrophysics is a new emerging field of basic sciences, and has tremendous discovery potentials. The laboratory astrophysics investigates the basic physical phenomena in the astrophysical objects in controlled and reproducible manners, which has become possible only recently due to the newly-established intense photon and ion beam facilities worldwide. In this presentation, we will introduce several promising ideas for laboratory astrophysics programs that might be readily incorporated in the Pohang Accelerator Laboratory X-ray Free Electron Laser (PAL-XFEL). For example, precise spectroscopic measurements using Electron Beam Ion Trap (EBIT) and intense X-ray photons from the PAL-XFEL can be performed to explore the fundamental processes in high energy X-ray phenomena in the visible universe. Besides, in many violent astrophysical events, the energy density of matter becomes so high that the traditional plasma physics description becomes inapplicable. Generation of such high-energy density states can be also be achieved by using the intense photon beams available from the PAL-XFEL.

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$CF_4$/Ar 가스 플라즈마를 이용한 $YMnO_3$ 박막의 식각 반응연구 (Etching Mechanism of $YMnO_3$ Thin Films in High Density $CF_4$/Ar Plasma)

  • 김동표;김창일;이철인
    • 한국전기전자재료학회논문지
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    • 제14권12호
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    • pp.959-964
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    • 2001
  • We investigated the etching characteristics of YMnO$_3$ thin films in high-density plasma etching system. In this study, YMnO$_3$ thin films were etched with CF$_4$/Ar gas chemistries in inductively coupled plasma(ICP). Etch rates of YMnO$_3$ increased up to 20% CF$_4$ in CF$_4$/(CF$_4$+Ar), but decreased with furthermore increasing CF$_4$ in CF$_4$/(CF$_4$+Ar). In optical emission spectroscopy (OES) analysis, F radical and Ar* ions in plasma at various gas chemistries decreased with increasing CF$_4$ content. Chemical states of YMnO$_3$ films exposed in plasma were investigated with x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). There is a chemical reaction between metal (Y, Mn) and F and metal-fluorides were removed effectively by Ar ion sputtering. YF$_{x}$, MnF$_{x}$ such as YF, YF$_2$, YF$_3$ and MnF$_3$ were detected using SIMS analysis. The etch slope is about 65$^{\circ}$ and cleasn surface. surface of the etched YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The etch profile was also investigated by scanning electron microscopy (SEM).EM).

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