• Journal of Electrical Engineering and Technology
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• v.9 no.1
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• pp.307-312
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• 2014

We present a full finite element analysis for plasma discharge in etching process of semiconductor circuit. The charge transport equations of hydrodynamic diffusion-drift model and the electric field equation were numerically solved in a fully coupled system by using a standard finite element procedure for transient analysis. The proposed method was applied to a real plasma reactor in order to characterize the plasma sheath that is closely related to the yield of the etching process. Throughout the plasma discharge analysis, the base electrode of reactor was tested and modified for improving the uniformity around the wafer edge. The experiment and numerical results were examined along with SEM data of etching quality. The feasibility and usefulness of the proposed method was shown by both numerical and experimental results.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.7-15
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• 2000

An ECR-PECVD system with the characteristics of high ionization rat다 ability of plasma processing in a wide pressure range and deposition at low temperature was manufactured and characterized for the deposition of thin films. The system consists of a vacuum chamber, sample stage, vacuum gauge, vacuum pump, gas injection part, vacuum sealing valve, ECR source and a control part. The control of system is carried out by the microprocessor and the ROM program. We have investigated the vacuum characteristics of ECR-PECVD system, and also have diagnosed the characteristics of ECR microwave plasma by using the Langmuir probe. From the data of system and plasma characterization, we could confirmed the stability of pressure in the vacuum chamber according to the variation of gas flow rate and the effect of ion bombardment by the negative DC self bias voltage. The plasma density was increased with the increase of gas flow rate and ECR power. On the other hand, it was decreased with the increase of horizontal radius and distance between ECR source and probe. The calculated plasma densities were in the range of 49.7\times10^{11}\sim3.7\times10^{12}\textrm{cm}^{-3}$. It is also expected that we can estimate the thickness uniformity of film fabricated by the ECR-PECVD system from the distribution of the plasma density.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.891-894
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• 1999

ICP reactor produces high-density and high-uniformity plasma in large area, are has excellent characteristic of direction in the case of etching. Until now, many algorithms used one mesh method. These algorithms are not appropriate for sub 0.1 ${\mu}{\textrm}{m}$ device technologies which should deal with each ion. These algorithms could not present exactly straggle and interaction between projectile ions and could not consider reflection effects due to interactions among next projectile ions, reflected ions and sputtering ions, simultaneously. And difficult consider am-bipolar drift effect.

• Journal of the Semiconductor & Display Technology
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• v.3 no.3
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• pp.45-50
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• 2004

Highly oriented diamond (HOD) films in polycrystalline can be grown on the (100) silicon substrate by microwave plasma CVD. Bias enhanced nucleation (BEN) method was adopted for highly oriented diamond deposition with high nucleation density and uniformity. The substrate was biased up to -250[Vdc] and bias time required for forming a diamond film was varied up to 25 minutes. Diamond was deposited by using $\textrm{CH}_4$/CO and $H_2$ mixture gases by microwave plasma CVD. Nucleation density and degree of orientation of the diamond films were studied by SEM. Thermal conductivity of the diamond films was ∼5.27[W/cm.K] measured by $3\omega$ method.

• Journal of the Korean institute of surface engineering
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• v.50 no.6
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• pp.455-459
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• 2017

The development of flexible transparent electrode has been paid attention for flexible electronics. In this study, we have developed transparent electrode based on silver nanowires with improved electrical property and stability through ion-beam treatment. The energetic particles of ion-beam could sinter junctions of each silver nanowires and etch out polyvinylpyrollidone(PVP) coated on silver nanowires. The sheet resistance of silver nanowire transparent electrode was reduced by 74%, and the resistance uniformity was increased about 3 times after exposure of ion beam. Moreover, the stability at $85^{\circ}C$ of temperature and 85% of relative humidity could be also improved.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.185.2-185.2
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• 2016

The plasma density is an essential plasma parameter describing plasma physics. Furthermore, it affects the throughput and uniformity of plasma processing (etching, deposition, ashing, etc). Therefore, a novel technique for plasma density measurement has been attracting considerable attention. Microwave probe is a promising diagnostic technique. Various type of cutoff, hairpin, impedance, transmission, and absorption probes have been developed and investigated. Recently, based on the basic type of probes, modified flat probe (curling and multipole probes), have been developing for in situ processing plasma monitoring. There is a need for comparative study between the probes. It can give some hints on choosing the reliable probe and application of the probes. In this presentation, we make attempt of numerical study of different kinds of microwave probes. Characteristics of frequency spectrum from probes were analyzed by using three-dimensional electromagnetic simulation. The plasma density, obtained from the spectrum, was compared with simulation input plasma density. The different microwave probe behavior with changes of plasma density, sheath and pressure were found. To confirm the result experimentally, we performed the comparative experiment between cutoff and hairpin probes. The sheath and collision effects are corrected for each probe. The results were reasonably interpreted based on the above simulation.

• Transactions on Electrical and Electronic Materials
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• v.10 no.2
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• pp.35-39
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• 2009

A novel Helmholtz coil inductively coupled plasma(H-ICP) etcher is proposed and characterized for deep nano-scale CMOS technology. Various hardware tests are performed while varying key parameters such as distance between the top and bottom coils, the distance between the chamber ceiling and the wafer, and the chamber height in order to determine the optimal design of the chamber and optimal process conditions. The uniformity was significantly improved by applying the optimum conditions. The plasma density obtained with the H-ICP source was about $5{\times}10^{11}/cm^3$, and the electron temperature was about 2-3 eV. The etching selectivity for the poly-silicon gate versus the ultra-thin gate oxide was 482:1 at 10 sccm of $HeO_2$. The proposed H-ICP was successfully applied to form multiple 60-nm poly-silicon gate layers.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.649-652
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• 1992

ECR(Electron Cyclotron Resonance) occure at ${\omega}_c$=${\omega}$, ${\omega}_c$:electron cycltron frequency, ${\omega}$:electromagnetic wave frequency. ECR system have several merit, 1) power transefer efficiency 2) low neutral gas pressure (below 1 mTorr) 3) high plasma density($10^{12}$ $cm^{-3}$). It is applicated variously in the field of semiconductor and new materials as the manufacturing equipment. Magnetic field in ECR system contruct resonance layer (${\omega}$=2.45GHz, $B_z$=875 Gauss) and control plasma. Plasma is almost generated at resonance layer. If the distance between substrate and resonance layer is short, uniformity of plasma is related with profile of resonance layer. Plasma have the property "Cold in Field", so directonality of magnetic field is one of the control factors of anisotropic etching. In this study, we calculate B field and flux line distribution, optimize geometry and submagnet current and improve of magnetic field directionality (99.9%) near substrate. For the purpose of calculation, vector potential A(r,z) and magnetic field B(r,z), green function and numerical integration is used. Object function for submagnet optimization is magnetic field directionality on the substrate and Powell method is used as optimization skim.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.949-951
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• 1992

A low pressure DC plasma jet has been used to obtain diamond films from a mixture of $CH_4$ and $H_2$ with high deposition rate (>1$\mu\textrm{m}$/min). The effects of the deposition conditions such as torch geometry, substrate temperature, gas mixing ratio, chamber pressure, axial magnetic field on the diamond film properties such as morphology, purity, uniformity of the film and deposition rate, etc. have been examined with the aid of Scanning Electron Microscopy, X-Ray Diffraction, and Raman Spectroscopy. Both the growth rate and particle size increased rapidly for low methane concentrations but saturated and the morphology changed from octahedral to cubic structure when the concentration exceeded 1.0 %. Higher growth rates (>1.5${\mu}m$/min) can be obtained by applying an axial magnetic field to the DC plasma jet. Diamond obtained from the magnetized plasma jet also shows a sharp peak at 1332.5$cm^{-1}$ in the Raman Spectra and this result implies that higher growth rate with a good quality diamond films can he obtained by applying an external magnetic field to the plasma jet.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.376-378
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• 1997

Plasma density and its axial distribution and uniformity on the substrate in a helical resonator plasma in the external magnetic field have been measured using Langmuir probes. Net RF power is set to 200W and chamber pressure is varied from $1{\times}10^{-1}Torr$ to $1{\times}10^{-4}Torr$. There are three kinds of external magnetic field structure applied on the helical resonator plasma. One is a uniform magnetic field, another is a plus gradient magnetic field and the third is a minus gradient magnetic field. Of the three magnetic field structure, the minus gradient magnetic field is found to show the highest increase in plasma density on the substrate compared with other magnetic structures. In order to avoid radial density ununiformity, weak magnetic fields under 100Gauss are applied.