• 제목/요약/키워드: Plasma temperature

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플라즈마 활성 소결에 있어서 다이스의 온도분포에 미치는 몰드 크기의 영향 (Effect of Mold Dimensions on Temperature Distribution of Die during Plasma Activated Sintering)

  • 이길근;박익민
    • 한국분말재료학회지
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    • 제11권5호
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    • pp.363-368
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    • 2004
  • In the present study, the focus is on the analysis of the effect of the mold dimensions on the temperature distribution of a die during plasma activated sintering. The temperature distribution of a cylindrical mold with various dimensions was measured using K-type thermocouples. The temperature homogeneity of the die was studied based on the direction and dimensions of the die. A temperature gradient existed in the radial direction of the die during the plasma activated sintering. Also, the magnitude of the temperature gradient was increased with increasing sintering temperature. In the longitudinal direction, however, there was no temperature gradient. The temperature gradient of the die in the radial direction strongly depended on a ratio of die volume to punch area.

대기압 아르곤 플라즈마 토치의 진동 및 회전온도 측정 연구 (A Study on the Measurement of Vibrational and Rotational Temperature Using the Atmospheric Ar Plasma Torch)

  • 최광주;장문국;한상보;박재윤
    • 전기학회논문지
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    • 제60권10호
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    • pp.1895-1902
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    • 2011
  • This work was carried out for the measurement of vibration and rotation temperature using the optical emission spectroscopy of nitrogen second positive system in the small plasma torch. Among emissions $N_2$ SP systems, the emission of $N_2$ SP(0-0) was so strong. Emission peaks of SP system increased until the position of 12.5[mm] from the end of plasma torch, after that it decreased. However, vibration temperature decreased from 1540[K] to 1000[K] at the position of 12.5[mm]. In addition, rotational temperature was about 400[K] at the position of 10[mm] and it increased a little as much of 420[K] at 12.5[mm]. Consequently, the plasma torch discussed in this work is possible to apply in the surface treatment process under the low temperature.

플라즈마 용사된 알루미나-지르코니아 복합체의 고온 마모.마찰 거동 (High Temperature Wear Behavior of Plasma-Sprayed Zirconia-Alumina Composite Coatings)

  • 김장엽;임대순;안효석
    • Tribology and Lubricants
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    • 제12권3호
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    • pp.33-38
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    • 1996
  • High temperature wear behaviors of plasma-sprayed ZrO$_{2}$-$Y_{2}O_{3}$ composite coatings were investigated for high temperature wear resistance applications. The composite powders containing 20, 50, 80 vol% of alumina for plasma spray were made by spray drying method. Wear tests with composite coated specimens were performed at temperature ranges from room temperature to 800$^{\circ}$C. Wear tests were also carried out with heat treated specimens at room temperature. The microstructural change of coatings and the worn surface were examined by SEM and XRD. Sharp increase of wear loss at high temperature wear test was observed in specimens containing 50 and 80 vol% alumina. Similar trend was observed in the heat treated coatings. The measured residual stress was increased with increased alumina contents and heat treating temperatures. Residual stress induced during heat treatment appeared to be responsible to the observed harmful effect of alumina additions on the high temperature wear.

Exhaust Plasma Characteristics of Direct-Current Arcjet Thrusters

  • Tahara, Hirokazu
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2004년도 제22회 춘계학술대회논문집
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    • pp.327-334
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    • 2004
  • Spectroscopic and electrostatic probe measurements were made to examine plasma characteristics with or without a metal plate for a 10-㎾-class direct-current arcjet Heat fluxes into the plate from the plasma were also evaluated with a Nickel slug and thermocouple arrangement. Ammonia and mixtures of nitrogen and hydrogen were used. The NH$_3$ and $N_2$+3H$_2$ plasmas in the nozzle and in the downstream plume without a plate were in thermodynamical nonequilibrium states. As a result, the H-atom electronic excitation temperature and the $N_2$ molecule-rotational excitation temperature intensively decreased downstream in the nozzle although the NH molecule-rotational excitation temperature did not show an axial decrease. Each temperature was kept in a small range in the plume without a plate except for the NH rotational temperature for NH$_3$ gas. On the other hand, as approaching the plate, the thermodynamical nonequilibrium plasma came to be a temperature-equilibrium one because the plasma flow tended to stagnate in front of the plate. The electron temperature had a small radial variation near the plate. Both the electron number density and the heat flux decreased radially outward, and an increase in H$_2$ mole fraction raised them at a constant radial position. In cases with NH$_3$ and $N_2$+3H$_2$ a large number of NH radical with a radially wide distribution was considered to cause a large amount of energy loss, i.e., frozen flow loss, for arcjet thrusters.

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Measurement of electron temperature and density using Stark broadening of the coaxial focused plasma for extreme ultraviolet (EUV) lithography

  • Lee, Sung-Hee;Hong, Young-June;Choi, Eun-Ha
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.475-475
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    • 2010
  • We have generated Ar plasma in dense plasma focus device with coaxial electrodes for extreme ultraviolet (EUV) lithography and investigated an emitted visible light for electro-optical plasma diagnostics. We have applied an input voltage 4.5 kV to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ar gas of pressure 8 mTorr. The inner surface of the cylindrical cathode has been attatched by an acetal insulator. Also, the anode made of tin metal. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium (LTE) conditions, the electron temperature and density of the coaxial plasma focus could be obtained by Stark broadening of optical emission spectroscopy (OES). The Lorentzian profile for emission lines of Ar I of 426.629 nm and Ar II of 487.99 nm were measured with a visible monochromator. And the electron density has been estimated by FWHM (Full Width Half Maximum) of its profile. To find the exact value of FWHM, we observed the instrument line broadening of the monochromator with a Hg-Ar reference lamp. The electron temperature has been calculated using the two relative electron density ratios of the Stark profiles. In case of electron density, it has been observed by the Stark broadening method. This experiment result shows the temporal behavior of the electron temperature and density characteristics for the focused plasma. The EUV emission signal whose wavelength is about 6 ~ 16 nm has been detected by using a photo-detector (AXUV-100 Zr/C, IRD). The result compared the electron temperature and density with the temporal EUV signal. The electron density and temperature were observed to be $10^{16}\;cm^{-3}$ and 20 ~ 30 eV, respectively.

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플라즈마 산질화처리된 SCM435강의 표면경화층의 미세조직과 특성 (The Characteristics of the Oxide Layer Produced on the Plasma Nitrocarburized Compound Layer of SCM435 Steel by Plasma Oxidation)

  • 전은갑;박익민;이인섭
    • 한국재료학회지
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    • 제14권4호
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    • pp.265-269
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    • 2004
  • Plasma nitrocarburising and post oxidation were performed on SCM435 steel by a pulsed plasma ion nitriding system. Plasma oxidation resulted in the formation of a very thin ferritic oxide layer 1-2 $\mu\textrm{m}$ thick on top of a 15~25 $\mu\textrm{m}$ $\varepsilon$-F $e_{2-3}$(N,C) nitrocarburized compound layer. The growth rate of oxide layer increased with the treatment temperature and time. However, the oxide layer was easily spalled from the compound layer either for both oxidation temperatures above $450^{\circ}C$, or for oxidation time more than 2 hrs at oxidation temperature $400^{\circ}C$. It was confirmed that the relative amount of $Fe_2$$O_3$, compared with $e_3$$O_4$, increased rapidly with the oxidation temperature. The amounts of ${\gamma}$'-$Fe_4$(N,C) and $\theta$-$Fe_3$C, generated from dissociation from $\varepsilon$-$Fe_{2-3}$ /(N,C) phase during $O_2$ plasma sputtering, were also increased with the oxidation temperature.e.

Surface Cleaning of Polyethylene Terephthalate Film with Non-equilibrium Atmospheric Discharge Plasma

  • Sung, Youl-Moon
    • Transactions on Electrical and Electronic Materials
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    • 제9권2호
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    • pp.79-83
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    • 2008
  • The dampness by treating the surface with polyethylene terephthalate (PET) film was measured to grasp the plasma parameters and was observed the surface condition with an atomic force microscope (AFM) to find the causes of the dampness. Also, the vibrational and rotational temperatures in the plasma were calculated after identifying the radicals within the plasma by analyzing the emission spectral with an emission spectrum. The hydrophilic properties were enhanced, by treating the surface of the PET film with non-equilibrium atmospheric discharge plasma. When the rotational temperature was 0.22 to 0.31 eV within the plasma, surface modification control could be easily carried out to surface treatment of PET film on non-equilibrium atmospheric pressure plasma.

저온플라즈마 및 효소처리한 면의 물성 및 염색성 (Physical Properties and Dyeing Behaviors of Cotton Fabric Treated with Low Temperature Plasma and/or Cellulase)

  • Yoon, Nam Sik;Lim, Yong Jin
    • 한국염색가공학회지
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    • 제8권3호
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    • pp.59-65
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    • 1996
  • Cotton fabrics were treated by low temperature plasma and/or cellulase, and its physical and dyeing properties were investigated. All the pretreatments of the cotton with low temperature plasma of oxygen, nitrogen and argon slowed down the rate of weight loss of cotton in cellulase solution. Plasma pretreatment did not show any strength retention effect on cotton fiber in the subsequent cellulase treatment. Pretreatment of cotton with low temperature oxygen plasma decreased the rate of dyeing in direct dye bath, while cellulase or plasma/cellulase pretreatment increased the rate. Equilibrium dye uptake of cotton was not changed greatly by the pretreatments except the normal untreated cotton showed more or less high uptake. The pretreatment of cellulase with a water-soluble carbodiimide reduced the enzymatic activity, and did not show any strength retention of cotton in enzymatic weight loss.

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Plasma Etching Process based on Real-time Monitoring of Radical Density and Substrate Temperature

  • Takeda, K.;Fukunaga, Y.;Tsutsumi, T.;Ishikawa, K.;Kondo, H.;Sekine, M.;Hori, M.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.93-93
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    • 2016
  • Large scale integrated circuits (LSIs) has been improved by the shrinkage of the circuit dimensions. The smaller chip sizes and increase in circuit density require the miniaturization of the line-width and space between metal interconnections. Therefore, an extreme precise control of the critical dimension and pattern profile is necessary to fabricate next generation nano-electronics devices. The pattern profile control of plasma etching with an accuracy of sub-nanometer must be achieved. To realize the etching process which achieves the problem, understanding of the etching mechanism and precise control of the process based on the real-time monitoring of internal plasma parameters such as etching species density, surface temperature of substrate, etc. are very important. For instance, it is known that the etched profiles of organic low dielectric (low-k) films are sensitive to the substrate temperature and density ratio of H and N atoms in the H2/N2 plasma [1]. In this study, we introduced a feedback control of actual substrate temperature and radical density ratio monitored in real time. And then the dependence of etch rates and profiles of organic films have been evaluated based on the substrate temperatures. In this study, organic low-k films were etched by a dual frequency capacitively coupled plasma employing the mixture of H2/N2 gases. A 100-MHz power was supplied to an upper electrode for plasma generation. The Si substrate was electrostatically chucked to a lower electrode biased by supplying a 2-MHz power. To investigate the effects of H and N radical on the etching profile of organic low-k films, absolute H and N atom densities were measured by vacuum ultraviolet absorption spectroscopy [2]. Moreover, using the optical fiber-type low-coherence interferometer [3], substrate temperature has been measured in real time during etching process. From the measurement results, the temperature raised rapidly just after plasma ignition and was gradually saturated. The temporal change of substrate temperature is a crucial issue to control of surface reactions of reactive species. Therefore, by the intervals of on-off of the plasma discharge, the substrate temperature was maintained within ${\pm}1.5^{\circ}C$ from the set value. As a result, the temperatures were kept within $3^{\circ}C$ during the etching process. Then, we etched organic films with line-and-space pattern using this system. The cross-sections of the organic films etched for 50 s with the substrate temperatures at $20^{\circ}C$ and $100^{\circ}C$ were observed by SEM. From the results, they were different in the sidewall profile. It suggests that the reactions on the sidewalls changed according to the substrate temperature. The precise substrate temperature control method with real-time temperature monitoring and intermittent plasma generation was suggested to contribute on realization of fine pattern etching.

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