• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.320-321
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• 2006

In this work, impedance Spectroscopic analysis was applied to study the effect of plasma treatment on the surface of indium-tin oxide (ITO) anodes using $CF_4g$ as and to model the equivalent circuit for organic light emitting diodes (OLEDs) with the $CF_4$ plasma treatment of ITO surface at the anodes. This device with ITO/TPD/$Alq_3$/LiF/Al structure can be modeled as a simple combination of a resistor and a capacitor. The $CF_4$ plasma treatment on the surface of ITO shifts the vacuum level of the ITO as a result of which the barrier height for hole injection at the ITO/organic interface is reduced. The Impedance spectroscopy measurement of the devices with the $CF_4$ plasma treatment on the surface of ITO anodes shows change of values in parallel resistance ($R_p$) and parallel capacitance ($C_p$).

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.284-284
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• 2011

Recently, the increasing degree of device integration in the fabrication of Si semiconductor devices, etching processes of nano-scale materials and high aspect-ratio (HAR) structures become more important. Due to this reason, etch selectivity control during etching of HAR contact holes and trenches is very important. In this study, The etch selectivity and etch rate of TEOS oxide layer using ACL (amorphous carbon layer) mask are investigated various process parameters in CH2F2/C4F8/O2/Ar plasma during etching TEOS oxide layer using ArF/BARC/SiOx/ACL multilevel resist (MLR) structures. The deformation and etch characteristics of TEOS oxide layer using ACL hard mask was investigated in a dual-frequency superimposed capacitively coupled plasma (DFS-CCP) etcher by different fHF/ fLF combinations by varying the CH2F2/ C4F8 gas flow ratio plasmas. The etch characteristics were measured by on scanning electron microscopy (SEM) And X-ray photoelectron spectroscopy (XPS) analyses and Fourier transform infrared spectroscopy (FT-IR). A process window for very high selective etching of TEOS oxide using ACL mask could be determined by controlling the process parameters and in turn degree of polymerization. Mechanisms for high etch selectivity will discussed in detail.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.436-437
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• 2006

In this work, impedance Spectroscopic analysis was applied to study the effect of plasma treatment on the surface of indum-tin oxide (ITO) anodes using $O_2$ gas and to model the equivalent circuit for organic light emitting diodes (OLEDs) with the $O_2$ plasma treatment of ITO surface at the anodes. This device with ITO/TPD/Alq3/LiF/Al structure can be modeled as a simple combination of a resistor and a capacitor. The $O_2$ plasma treatment on the surface of ITO shifts the vacuum level of the ITO as a result of which the barrier height for hole injection at the ITO/organic interface is reduced. The impedance spectroscopy measurement of the devices with the $O_2$ plasma treatment on the surface of ITO anodes shows change of values in parallel resistance ($R_p$) and parallel capacitance ($C_p$).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.301-301
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• 2010

In order to enhance the efficiency of the organic solar cells, the effects of plasma surface treatment with using $CF_4$ and $O_2$ gas on the anode ITO were studied. The polymer solar cell devices were fabricated on ITO glasses an active layer of P3HT (poly-3-hexylthiophene) and PCBM ([6,6]-phenyl C61-butyric acid methyl ester) mixture, without anode buffer layer, such as PEDOT:PSS layer. The metallic electrode was formed by thermally evaporated Al. Before the coating of organic layers, ITO surface was exposed to plasma made of $CF_4$ and $O_2$ gas, with/without heat treatment. In order to identify the effect the surface treatment, the current density and voltage characteristics were measured by solar simulator and the chemical composition of plasma treated ITO surface was analyzed by using X-ray photoelectron spectroscopy(XPS). In addition, the work function of the plasma treated ITO surface was measured by using ultraviolet photoelectron spectroscopy(UPS). The effects of plasma surface treatment can be attributed to the removal organic contaminants of the ITO surface, to the improvement of contact between ITO and buffer layer, and to the increase of work function of the ITO.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.176.2-176.2
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• 2013

Property of optical diagnostics for pulse-discharged plasma in liquid and its biological applications to proteins are investigated by making use of high voltage Marx generator. The Marx generator has been consisted of 5 stages, where each charging capacitor is 0.5 ${\mu}F$, to generate a high voltage pulse with rising time of $1{\mu}s$. We have applied an input voltage of 6 kV to the each capacitor of 0.5 ${\mu}F$. High voltage pulsed plasma has been generated inside a polycarbonate tube by a single-shot operation, where the breakdown voltage is measured to be 7 kV, current of 1.2 kA, and pulse width of ~ 1 ${\mu}s$ between the two electrodes of anode-cathode whose material is made of tungsten pin, which are immersed into the liquids. We have investigated the emitted hydrogen lines for optical diagnostics of high voltage pulsed plasma. The emission line of 656.3 nm from $H-{\alpha}$ and 486.1 nm from $H-{\beta}$ have been measured by a monochromator. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium conditions, the electron temperature and density of the high voltage pulsed plasma in liquid could be obtained by the Stark broadening of optical emission spectroscopy. For the investigation of the influence of pulsed plasma on biological proteins, we have exposed it onto the proteins such as hemoglobin and myoglobin. The structural changes in these proteins and their analysis have also been obtained by circular dichroism (CD) and ultraviolet (UV) visible spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.136.1-136.1
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• 2015

In the present study, UHF (320 MHz) in combination with RF (13.56 MHz) plasmas was used for the synthesis of hydrogenated silicon nitride (SiNx:H) films by PECVD process at low temperature. RF/UHF hybrid plasmas were maintained at a fixed pressure of 410 mTorr in the N2/SiH4 and N2/SiH4/NH3 atmospheres. To investigate the radical generation and plasma formation and their control for the growth of the film, plasma diagnostic tools like vacuum ultraviolet absorption spectroscopy (VUVAS), optical emission spectroscopy (OES), and RF compensated Langmuir probe (LP) were utilized. Utilization of RF/UHF hybrid plasmas enables very high plasma densities ~ 1011 cm-3 with low electron temperature. Measurements using VUVAS reveal the UHF source is quite effective in the dissociation of the N2 gas to generate more active atomic N. It results in the enhancement of the Si-N bond concentration in the film. Consequently, the deposition rate has been significantly improved up to 2nm/s for the high rate synthesis of highly transparent (up to 90 %) SiNx:H film. The films properties such as optical transmittance and chemical composition are investigated using different analysis tools.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.171-171
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• 2011

Atmospheric pressure- plasma enhanced chemical vapor deposition(AP-PECVD)Processes are recognized as promising and cost effective methods for wide-area coating on sheets of steel, glass, polymeric web, etc. In this study, $SiO_xC_y$ thin films were deposited by using AP-PECVD with a dielectric barrier discharge(DBD). The characteristic of $SiO_xC_y$ thin films were investigated as afunction of the HMDSO/O2/He flow rate. And the moisture permeability of $SiO_xC_y$ thin films was studied. The $SiO_xC_y$ thin films were characterized by the Fourier-transformed Infrared(FT-IR) spectroscopy and also investigated by X-ray photo electron spectroscopy(XPS), Auger Electron Spectroscopy(AES). The moisture permeability of $SiO_xC_y$ thin films was investigated by $H_2O$ permeability tester Detailed experimental results will be demonstrated through th present work.

• Analytical Science and Technology
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• v.32 no.4
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• pp.121-130
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• 2019

Alumina is one of the most important ceramic materials because of its useful physical and chemical properties. Recently, high-purity alumina has been used in various industrial fields. This leads to increasing demand for reliable elemental analysis of impurities in alumina samples. However, the chemical inertness of alumina makes the sample preparation for conventional elemental analysis a tremendously difficult task. Herein, we demonstrated the feasibility of laser ablation for effective sampling of alumina powder. Laser ablation performs sampling rapidly without any chemical reagents and also allows simultaneous optical emission spectroscopy and mass spectrometry analyses. For six alumina samples including certified reference materials and commercial products, laser-induced breakdown spectroscopy (LIBS) and laser-ablation inductively-coupled plasma mass spectrometry (LA-ICP-MS) analyses were performed simultaneously based on a common laser ablation sampling. LIBS was found to be useful to quantify alkali and alkaline earth metals with limits-of-detection (LODs) around 1 ppm. LA-ICP-MS could quantify transition metals such as Ti, Cu, Zn, and Zr with LODs in the range from a few tens to hundreds ppb.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.395-401
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• 2013

In-situ optical emission spectroscopy (OES) is employed for leak detection in plasma etching system. A misprocessing is reported for significantly reduced silicon etch rate with chlorine gas, and OES is used as a supplementary sensor to analyze the gas phase species that reside in the process chamber. Potential cause of misprocessing reaches to chamber O-ring wear out, MFC leaks, and/or leak at gas delivery line, and experiments are performed to funnel down the potential of the cause. While monitoring the plasma chemistry of the process chamber using OES, the emission trace for nitrogen species is observed at the chlorine gas supply. No trace of nitrogen species is found in other than chlorine gas supply, and we found that the amount of chlorine gas is slightly fluctuating. We successfully found the root cause of the reported misprocessing which may jeopardize the quality of thin film processing. Based on a quantitative analysis of the amount of nitrogen observed in the chamber, we conclude that the source of the leak is the fitting of the chlorine mass flow controller with the amount of around 2-5 sccm.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.2
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• pp.141-148
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• 2014

In this work, effects of plasma on different hardness of welding steel using laser-induced breakdown spectroscopy were investigated. The ratios of ionic to atomic spectrum peaks were related to its material hardness. The major spectrum peak (Fe) and minor spectrum peak (Mn) were considered as monitoring elements. The stronger repulse plasma was generated, the harder material it was. The ratios of ionic to atomic spectrum peaks increased with respect to the material hardness as well. The correlation of minor spectrum peaks was stronger than that of major spectrum peaks. However, the major spectrum peaks indicated a similar trend, which could be used to estimate the hardness, too. Based on this result, the method could be used as a non-contact remote measurement of material properties.