• 제목/요약/키워드: Plasma sheath

검색결과 98건 처리시간 0.026초

유체 모델을 이용한 질소 플라즈마의 특성 분석 (The Analysis of Nitrogen Plasma Using One-dimensional Self-consistent RF Fluid-Model)

  • 임장섭;소순열
    • 조명전기설비학회논문지
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    • 제18권1호
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    • pp.28-35
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    • 2004
  • 질소는 안정한 가스로서 잘 알려져 있지만, 해리, 여기, 선리 등의 반응이 일어나기 시작하면 활성도가 높아지게 되고 오랫동안 유지되는 특성을 갖고 있다. 이러한 반응 및 전송과정을 이용하는 예가 많은 분야에서 볼 수 있다. 현재 질소 가스만의 특성 분석 연구에 관한 보고는 상당히 부ㅈㄱ하며 이러한 부분에 대한 연구가 필요하다고 볼 수 있다. 본 연구에서는 질소 플라즈마의 특성을 상세하게 이해하기 위해, 용량 결합형 프라즈마의 1차원 유체 모델에 의한 시뮬레이션을 행하였다. 하전입자의 밀도, 공가 전계 및 전자 에너지 등의 기본적인 움직임을 혹인하고, 전기적으로 정의 가스에서는 발생? 않는 전기적 이중층의 형성을 분석하였다. 또한 전원 전압을 300∼700 [V] 로, 압력을 0.2∼2.0 [Tow] 로 변화시켜, 그에 따른 플라즈마를 구성하는 각 입자들의 특성을 고찰하였다.

초미세 공정에 적합한 ICP(Inductive Coupled Plasma) 식각 알고리즘 개발 및 3차원 식각 모의실험기 개발 (Development of New Etching Algorithm for Ultra Large Scale Integrated Circuit and Application of ICP(Inductive Coupled Plasma) Etcher)

  • 이영직;박수현;손명식;강정원;권오근;황호정
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1999년도 하계종합학술대회 논문집
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    • pp.942-945
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    • 1999
  • In this work, we proposed Proper etching algorithm for ultra-large scale integrated circuit device and simulated etching process using the proposed algorithm in the case of ICP (inductive coupled plasma) 〔1〕source. Until now, many algorithms for etching process simulation have been proposed such as Cell remove algorithm, String algorithm and Ray algorithm. These algorithms have several drawbacks due to analytic function; these algorithms are not appropriate for sub 0.1 ${\mu}{\textrm}{m}$ device technologies which should deal with each ion. These algorithms could not present exactly straggle and interaction between Projectile ions and could not consider reflection effects due to interactions among next projectile ions, reflected ions and sputtering ions, simultaneously In order to apply ULSI process simulation, algorithm considering above mentioned interactions at the same time is needed. Proposed algorithm calculates interactions both in plasma source region and in target material region, and uses BCA (binary collision approximation4〕method when ion impact on target material surface. Proposed algorithm considers the interaction between source ions in sheath region (from Quartz region to substrate region). After the collision between target and ion, reflected ion collides next projectile ion or sputtered atoms. In ICP etching, because the main mechanism is sputtering, both SiO$_2$ and Si can be etched. Therefore, to obtain etching profiles, mask thickness and mask composition must be considered. Since we consider both SiO$_2$ etching and Si etching, it is possible to predict the thickness of SiO$_2$ for etching of ULSI.

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플라즈마 침적에 의한 핵열료 제조에 미치는 변수들의 영향 (Parameters Effect on Fabrication of Nuclear Fuel by Plasma Deposition)

  • 정인하;배기광
    • 한국재료학회지
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    • 제8권9호
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    • pp.783-790
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    • 1998
  • 용융점 및 물리.화학적 특성이 $\textrm{UO}_{2}$와 비슷한 yttria-stabilized-zirconia ($\textrm{ZrO}_{2}$-$\textrm{Y}_{2}\textrm{O}_{3}$)분말을 유도플라즈마(induction plasma)로 용융 침적시켜 원자력발전용 핵연료펠렛 제조공정에 응용하고자 하였다. 분말의 용융정도는 플라즈마동력 및 분말의 크기에 영향을 받는 것으로 나타났으며, 쉬스가스 조성, 분말분사관 위치, 입자크기 및 분사거리 등을 최적화 하여 Ar/$\textrm{H}_{2}$유량120/20$\ell$/min, 플리즈마 동력 80KW, 분사관의위치 8cm , 챔버압력 200Torr, 분사거리 18cm에서 이론밀도의 97.91%, 침적속도 20mm/min의 최적조건을 도출하였다. 침적시험에서 도출된 최적조건으로 펠렛몰더에서 제조한 펠렛은 96.5%의 밀도를 나타내었으며, 균일도 및 외곤도 우수하여 신기술에 의한 핵연료의 제조가능성을 확인하였다. 고밀도 침적에 영향을 미치는 각 변수들의 영향과 이들 변수들의 상호영향은 ANOVA(Analysis of Variance)을 이용하여 분석하였다.

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VHF-CCP 설비에서 Ar/SF6 플라즈마 분포가 Si 식각 균일도에 미치는 영향 분석 (Analysis of Si Etch Uniformity of Very High Frequency Driven - Capacitively Coupled Ar/SF6 Plasmas)

  • 임성재;이인규;이하늘;손성현;김곤호
    • 반도체디스플레이기술학회지
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    • 제20권4호
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    • pp.72-77
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    • 2021
  • The radial distribution of etch rate was analyzed using the ion energy flux model in VHF-CCP. In order to exclude the effects of polymer passivation and F radical depletion on the etching. The experiment was performed in Ar/SF6 plasma with an SF6 molar ratio of 80% of operating pressure 10 and 20 mTorr. The radial distribution of Ar/SF6 plasma was diagnosed with RF compensated Langmuir Probe(cLP) and Retarding Field Energy Analyzer(RFEA). The radial distribution of ion energy flux was calculated with Bohm current times the sheath voltage which is determined by the potential difference between the plasma space potential (measured by cLP) and the surface floating potential (by RFEA). To analyze the etch rate uniformity, Si coupon samples were etched under the same condition. The ion energy flux and the etch rate show a close correlation of more than 0.94 of R2 value. It means that the etch rate distribution is explained by the ion energy flux.

AC PDP 유전층의 절연내력과 투명도에 관한 연구 (A STUDY ON THE CHARACTERISTICS OF DIELECTRIC LAYER ON THE DISCHARGE ELECTRODES IN AC PDP)

  • 이성현;김방주;김규섭;박정후;조정수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 하계학술대회 논문집 E
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    • pp.1788-1790
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    • 1998
  • The dielectric layers in AC plasma display panel(AC PDP) are essential to the discharge cell structure, because they protect metal electrodes from sputtering by positive ion bombarding in discharge plasma and form a sheath of wall charges which are essential to memory function of AC PDP. This layer should have high dielectric strength and also be transparent because the luminance of PDP is strongly correlated this layer. In this paper, we discussed the dielectric strength and transparency of the dielectric layer under various conditions. As a result, on the $15{\mu}m$ thickness, the minimum dielectric strength was $29V/{\mu}m$ and the transmittance coefficient was about 80% after $570^{\circ}C$ firing process. It can be proposed that the resonable dielectric thickness in AC PDP is $15{\mu}m$ because it has about 80V margin on the maximum applied voltage.

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AC PDP 유전층의 절연파괴 전압과 투명도에 관한 연구 (A Study on the Dielectric Breakdown voltage and Transparency of Dielectric Layer in AC PDP)

  • 박정후;이성현;김규섭;손제봉;조정수
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제48권1호
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    • pp.39-44
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    • 1999
  • The dielectric layers in AC plasma display panel(PDP) are essential to the discharge cell structure, because they protect metal electrodes from sputtering by positive ion bombarding in discharge plasma and form a sheath of wall charges which are essential to memory function of AC PDP. This layer should have high dielectric breakdown voltage, and also be transparent because the luminance of PDP is strongly correlated this layer. In this paper, we discussed the dielectric breakdown voltage and transparency of the dielectric layer under various conditions. As a result, on the $15\mum$ thickness, the minimum dielectric breakdown voltage was 435V and the transmission coefficient was about 80% after $570^{\circ}C$ firing process. It can be proposed that the resonable dielectric thickness in AC PDP is $15\mum$ because it has about 75V margin on the maximum applied voltage.

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Simulation of Capacitively Coupled RF Plasma; Effect of Secondary Electron Emission - Formation of Electron Shock Wave

  • Park, Seung-Kyu;Kim, Heon-Chang
    • 반도체디스플레이기술학회지
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    • 제8권3호
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    • pp.31-37
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    • 2009
  • This paper presents one and two dimensional simulation results with discontinuous features (shocks) of capacitively coupled rf plasmas. The model consists of the first two and three moments of the Boltzmann equation for the ion and electron fluids respectively, coupled to Poisson's equation for the self-consistent electric field. The local field and drift-diffusion approximations are not employed, and as a result the charged species conservation equations are hyperbolic in nature. Hyperbolic equations may develop discontinuous solutions even if their initial conditions are smooth. Indeed, in this work, secondary electron emission is shown to produce transient electron shock waves. These shocks form at the boundary between the cathodic sheath (CS) and the quasi-neutral (QN) bulk region. In the CS, the electrons emitted from the electrode are accelerated to supersonic velocities due to the large electric field. On the other hand, in the QN the electric field is not significant and electrons have small directed velocities. Therefore, at the transition between these regions, the electron fluid decelerates from a supersonic to a subsonic velocity in the direction of flow and a jump in the electron velocity develops. The presented numerical results are consistent with both experimental observations and kinetic simulations.

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Immunochemical Localization of Tetrahydrocannabinol (THC) in Chemically Fixed Glandular Thrichomes of Cannabis (Cannabaceae)

  • Eun Soo Kim;Paul G. Mahlberg
    • Animal cells and systems
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    • 제3권2호
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    • pp.215-219
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    • 1999
  • Monoclonal antibody for delta-9-tetrahydrocannabiol (THC Ab), conjugated with protein A-gold, was employed as a probe to detect THC localization in the gland and subjacent cells of chemically fixed bracts of Cannabis. THC was detected in the outer wall of the disc cells, fibrillar matrix, the surface feature of secretory vesicles, and sheath throughout development of the secretory cavity. The probe was absent from vesicles. Label was also present in anticlinal walls of disc cells and walls of dermal and mesophyll cells. Little or no THC Ab was present in disc cells and none were detected in control tissues. This distribution pattern of THC Ab was similar to that in tissues prepared by high pressure cryofixation-cryosubstitution. Consistent association of THC with wall and wall-derived materials suggests that cannnabinoids are synthesized outside the plasma membrane and bound to a wall component, where-upon they are transported to the cavity with wall materials released from the disc cell wall during development of the secretory cavity.

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진공 / 플라즈마 실험 카트 설계 (Vacuum / Plasma Lab Cart Design)

  • 강충현;강대현;주정훈
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2016년도 추계학술대회 논문집
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    • pp.187-187
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    • 2016
  • 진공 압력에 따른 플라즈마 발생의 관계, 전압에 따른 방전 밝기, gas와 방전 전극에 따른 플라즈마 색의 변화 등 실험을 통하여 학부생들에게 진공 시스템과 플라즈마의 이해도를 높이기 위해 Geissler tube cart를 제작하였다. Pump는 TMP station (PFEIFFER Vacuum Hi Cube ECO 80)을 사용하였으며 reducer를 이용하여 CF-4.5"에서 CF-2.75" adaptor를 설치, gate valve를 연결하여 진공도를 조절 할 수 있게 하였으며, 5-way를 이용하여 왼쪽은 gas line, 정면 view port, 상단 geissler tube, 후면 compact full range gauge를 설치하였고, cart 제작 결과를 Fig. 1에 나타내었다. Geissler tube의 수치모델은 Fig. 2에 나타내었다. 저진공(<10-3 Torr) 영역부터 고진공(<10-4 Torr) 영역까지 진공도에 따른 방전을 관찰 할 수 있으며, 표면과 플라즈마 사이의 전위 변화에 따른 쉬스(sheath) 관찰, trans 와 slidacs를 이용하여 전압 조정이 가능하기 때문에 전압에 따른 방전 관찰과 gas line을 통한 gas 주입에 따른 색의 변화를 관찰이 가능하도록 설계하였다.

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PDP에서 방전전극상의 유전층의 절연내력과 투명도에 관한 연구 (A Study on the Dielectric Breakdown Strength and Transparency of Dielectric Layer on the Discharge Electrodes in PDP)

  • 이성현;김영기;지성원;조정수;박정후
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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    • pp.379-381
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    • 1997
  • The dielectric layers in AC plasma display panel(AC PDP) are essential to the discharge cell structure, because they protect metal electrodes from sputtering by positive ion and from a sheath of wall charges which are essential to memory function of AC PDP. Furthermore, this layer should be transparent because the visible light must pass through the layer. In this paper, the dielectric breakdown strength and transparency of the dielectric layer on the discharge electrodes are studied. The variables in this test are the dielectric layer thickness, dielectric firing condition, gas pressure, species of gas and so on.

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