• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.06a
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• pp.14-14
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• 2001

Nitride films such as TiN, CrN etc. deposited on glass by PVD processes have been developed for many industrial applications. These nitride films deposited on glass were widely used for not only decorative and optical coatings but also wear and corrosion resistance coatings employed as dies and molds made of glass for the example of lens forming molds. However, the major problem of nitride coatings on glass by PVD process is non-uniform film owing to pin-hole and micro crack. It is estimated that nonuniform coating is influenced by a different surface energy between metal nitrides and glass due to binding states. In this work, therefore, for the evaluation of nucleation and growth mechanism of nitride films on glass TiN and CrN film were synthesized on glass with various nitrogen partial pressure by unbalanced magnetron sputtering. Prior to deposition, for the examination of relationship between surface energy and film microstructure plasma pre-treatment process was carried out with various argon to hydrogen flow rate and substrate bias voltage, duty cycle and frequency by using pulsed DC power supply. Surface energy owing to the different plasma pre-treatment was calculated by the measurement of wetting angle and surface conditions of glass were investigated by X-ray Photoelectron Spectroscopy(XPS) and Atomic Force Microscope(AFM). The microstructure change of nitride films on glass with increase of film thickness were analyzed by X-Ray Diffraction(XRD) and Scanning Electron Microscopy(SEM).

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1415-1417
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• 2009

High transmittance and low resistance index matched transparent conducting oxide (IMTCO) coated glass was prepared and characterized. IMTCO was deposited by RF magnetron sputtering with the thickness of 15nm and 90nm thick anti-reflection layer was evaporated. To modify surface to hydrophilic, in-situ plasma treatment was also performed. IMTCO coated glass exhibited 96.6% of transmittance in the wavelength range of 400~700nm which is relatively high value compared to commercially available IMTCO glass. The sheet resistance uniformity was measured to be 1.53%.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.52 no.5
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• pp.206-206
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• 2003

It is hard to expect excellent electrical, mechanical and chemical properties from most of the composite materials presently used as insulators due to insufficient wettability property caused by the difference of interfacial properties between the matrix material and the reinforcer. Therefore, various interfacial coupling agents have been developed to improve the interfacial properties of composite materials. But if the wettable coupling agents are used outdoor for a long time, change in quality takes place in the coupling agents themselves, bringing about deterioration of the properties of the composite materials. In this study, glass surface was treated by plasma to examine the effect of dry interface treatment without coupling agent. It was identified that the optimum parameters for the best wettability of the samples at the time of generation of plasma were oxygen atmosphere, 0.1 torr of system pressure, 100 W of discharge power, and 3 minutes of discharge time. Also, the surface resistance rate and dielectric property were improved.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.5
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• pp.206-212
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• 2003

It is hard to expect excellent electrical, mechanical and chemical properties from most of the composite materials presently used as insulators due to insufficient wettability property caused by the difference of interfacial properties between the matrix material and the reinforcer. Therefore, various interfacial coupling agents have been developed to improve the interfacial properties of composite materials. But if the wettable coupling agents are used outdoor for a long time, change in quality takes place in the coupling agents themselves, bringing about deterioration of the properties of the composite materials. In this study, glass surface was treated by plasma to examine the effect of dry interface treatment without coupling agent. It was identified that the optimum parameters for the best wettability of the samples at the time of generation of plasma were oxygen atmosphere, 0.1 torr of system pressure, 100 W of discharge power, and 3 minutes of discharge time. Also, the surface resistance rate and dielectric property were improved.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.38.1-38.1
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• 2009

Plasma etching is an essential process for electronic device industries and the particulate contamination during plasma etching has been interested as a big issue for the yield of productivity. The oxynitride glasses have a merit to prevent particulate contamination due to their amorphous structure and plasma etching resistance. The YSiAlON oxynitride glasses with increasing nitrogen content were manufactured. Each oxynitride glasses were fluorine-plasma etched and their plasma etching rate and surface roughness were compared with reference materials such as sapphire, alumina and quartz. The reinforcement mechanism of plasma etching resistance of the YSiAlON glasses studied by depth profiling at plasma etched surface using electron spectroscopy for chemical analysis. The plasma etching rate decreased with nitrogen content and there was no selective etching at the plasma etched surface of the oxynitride glasses. The concentration of silicon was very low due to the generation of SiF4 very volatile byproduct and the concentration of aluminum and yttrium was relatively constant. The elimination of silicon atoms during plasma etching was reduced with increasing nitrogen content because the content of the nitrogen was constant. And besides, the concentration of oxygen was very low on the plasma etched surface. From the study, the plasma etching resistance of the glasses may be improved by the generation of nitrogen related structural groups and those are proved by chemical composition analysis at plasma etched surface of the YSiAlON oxynitride glasses.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.2
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• pp.122-129
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• 2004

There is an increasing need for large flat panel display devices. PDP (Plasma Display Panel) is one of the most promising candidates for this need. Thermal shock failure of PDP glass during manufacturing process is a critical issue in PDP industry since it is closely related to the product yield and the production speed. In this study, thermal shock resistance of PDP glass is measured by water quenching test and an analysis scheme is described for estimating transient temperature and stress distributions during thermal shock. Based on the experimental data and the analysis results, a simple procedure for predicting the thermal shock failure of PDP glass is proposed. The fast cooling process for heated glass plates can accelerate the speed of PDP production, but often leads to thermal shock failure of the glass plates. Therefore, a design guideline for preventing the failure is presented from a viewpoint of high speed PDP manufacturing process. This design guideline can be used for PDP process design and thermal -shock failure prevention.

• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.130-135
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• 2023

Plasma-resistant ceramic (PRC) is a material used to prevent internal damage in plasma processing equipment for semiconductors and displays. The challenge is to suppress particles falling off from damaged surfaces and increase retention time in order to improve productivity and introduce the latest miniaturization process. Here, we confirmed the effect of suppressing plasma deterioration and reducing the etch rate through surface treatment of existing PRC with an initial illumination level of 200 nm. In particular, quartz glass showed a decrease in etch rate of up to 10%. Furthermore, it is believed that micro-scale secondary particles formed on the microstructure of each material grow as crystals during the fluoridation process. This is a factor that can act as a killer defect when dropped, and is an essential consideration when analyzing plasma resistance. The plasma etching suppression effect of the initial illumination is thought to be due to partial over etching at the dihedral angle of the material due to the sputtering of re-emission of Ar+-based cations. This means that plasma damage due to densification can also be interpreted in existing PRC studies. The research results are significant in that they present surface treatment conditions that can be directly applied to existing PRC for mass production and a new perspective to analyze plasma resistance in addition to simple etching rates.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1463-1464
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• 2011

An indium thin oxide(ITO) is used as a substrate material for organic light-emitting diodes(OLEDs) and organic photovoltaic cells. This study examined the effects of an $O_2$ plasma treatment on the electrical properties of an organic photovoltaic cell. The four probe method and Atomic force microscope(AFM) revealed the lowest surface resistance at the plasma treatment intensity of 250 [W] and the lowest average surface roughness of 2.0 [nm] at 250 [W]. The lowest average resistance of 17 [${\Omega}$/sq] was also observed at 250 [W] 40 [sec]. The $O_2$ plasma treatment device and a basic device in a structure of CuPc/C60/BCP/Al on ITO glass were fabricated by thermal evaporation, respectively. When the $O_2$ plasma treatment was used to the ITO, The experimental results revealed that the power conversion efficiency(PCE) indicated 65 [%] higher in the PCE than that without the plasma treatment.

• Korean Journal of Materials Research
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• v.34 no.6
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• pp.303-308
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• 2024

The semiconductor and display industries require the development of plasma resistant materials for use in high density plasma etching process equipment. Yttria (Y₂O₃) is a ceramic material mainly used to ensure good plasma resistance properties, which requires a dense microstructure. In commercial production, a sintering process is applied to reduce the sintering temperature of Y₂O₃. In this study, the effect of the addition of glass frit to the sintered specimen was examined when manufacturing yttria sintered specimens for semiconductor process equipment parts. The Y₂O₃ specimen was shaped into a Ø50 mm size and then sintered at 1,600 ℃ for 1~8 h. The characteristics, X-ray diffraction pattern, densities, contraction rate of the specimen, and swelling of the surface of the Y₂O₃ specimens were investigated as a function of the sintering time and glass frit addition. The Y₂O₃ specimen exhibited a density of over 4.9 g/cm³ as the sintering time increased, and the swelling phenomenon characteristics were improved by glass frit, by controlling particle size.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.232.2-232.2
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• 2014

Since its discovery in 2004, graphene, a sp2-hybridized 2-Dimension carbon material, has drawn enormous attention. A variety of approaches have been attempted, such as epitaxial growth from silicon carbide, chemical reduction of graphene oxide and CVD. Among these approaches, the CVD process takes great attention due to its guarantee of high quality and large scale with high yield on various transition metals. After synthesis of graphene on metal substrate, the subsequent transfer process is needed to transfer graphene onto various target substrates, such as bubbling transfer, renewable epoxy transfer and wet etching transfer. However, those transfer processes are hard to control and inevitably induce defects to graphene film. Especially for wet etching transfer, the metal substrate is totally etched away, which is horrendous resources wasting, time consuming, and unsuitable for industry production. Thus, our group develops one-step process to directly grow graphene on glass substrate in plasma enhanced chemical vapor deposition (PECVD). Copper foil is used as catalyst to enhance the growth of graphene, as well as a temperature shield to provide relatively low temperature to glass substrate. The effect of growth time is reported that longer growth time will provide lower sheet resistance and higher VSG flakes. The VSG with conductivity of $800{\Omega}/sq$ and thickness of 270 nm grown on glass substrate can be obtained under 12 min growing time. The morphology is clearly showed by SEM image and Raman spectra that VSG film is composed of base layer of amorphous carbon and vertically arranged graphene flakes.