• 제목/요약/키워드: Plasma resistance glass

검색결과 47건 처리시간 0.023초

Al2O3 Free 다성분계 유리의 CF4/O2/Ar 내플라즈마 특성 (CF4/O2/Ar Plasma Resistance of Al2O3 Free Multi-components Glasses)

  • 민경원;최재호;정윤성;임원빈;김형준
    • 반도체디스플레이기술학회지
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    • 제21권3호
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    • pp.57-62
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    • 2022
  • The plasma resistance of multi-component glasses containing La, Gd, Ti, Zn, Y, Zr, Nb, and Ta was analyzed in this study. The plasma etching was performed via inductively coupled plasma-reactive ion etching (ICP-RIE) using CF4/O2/Ar mixed gas. After the reaction, the glass with a low fluoride sublimation temperature and high content of P, Si, and Ti elements showed a high etching rate. On the other hand, the glass containing a high fluoride sublimation temperature component such as Ca, La, Gd, Y, and Zr exhibited high plasma resistance because the etch rate was lower than that of sapphire. Glass with low plasma resistance increased surface roughness after etching or nanoholes were formed on the surface, but glass with high plasma resistance showed little change in surface microstructure. Thus, the results of this study demonstrate the potential for the development of plasma-resistant glasses (PRGs) with other compositions besides alumino-silicate glasses, which are conventionally referred to as plasma-resistant glasses.

MgO-Al2O3-SiO2계 유리 열물성 및 내플라즈마 특성에 대한 Fluorine 첨가의 영향 (Effects of Fluorine Addition on Thermal Properties and Plasma Resistance of MgO-Al2O3-SiO2 Glass)

  • 윤지섭;최재호;정윤성;민경원;김형준
    • 반도체디스플레이기술학회지
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    • 제21권1호
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    • pp.119-126
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    • 2022
  • MAS-based glass, which has been studied to replace the ceramic material used in the plasma etching chamber, has problems such as forming and processing due to its high melting temperature. To solve this problem, in this study, fluoride was added to the existing MAS-based glass to increase the workability in the glass manufacturing and to improve the chemical resistance to CF4/Ar/O2 plasma gas. Through RAMAN analysis, the structural change of the glass according to the addition of fluoride was observed. In addition, it was confirmed that high-temperature viscosity and thermal properties decreased as the fluoride content increased and plasma resistance was maintained, it showed an excellent etching rate of up to 11 times compared to quartz glass.

MgO-Al2O3-SiO2계 유리의 열물성과 내플라즈마성 연구 (Study on Thermal Properties and Plasma Resistance of MgO-Al2O3-SiO2 Glass)

  • 윤지섭;최재호;정윤성;민경원;임원빈;김형준
    • 반도체디스플레이기술학회지
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    • 제20권2호
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    • pp.61-66
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    • 2021
  • In this study, we studied the alternative of plasma resistant ceramic parts that constitute plasma chambers in the semiconductor dry etching process. MgO-Al2O3-SiO2(MAS) glass was made of 13 types of glass using the Design Of Experiments(DOE) and the effect on thermal properties such as glass transition temperature and crystallization temperature depending on the content of each composition and etching resistance to CF4/O2/Ar plasma gas. MAS glass showed excellent plasma resistance and surface roughness up to 20 times higher than quartz glass. As the content of Al2O3 and MgO increases, the plasma resistance is improved, and it has been confirmed that it has an inverse relationship with SiO2.

Bi-Al-Si-O와 Bi-Al-Si-O-F 유리 코팅막의 플라즈마 저항성 (Plasma resistance of Bi-Al-Si-O and Bi-Al-Si-O-F glass coating film)

  • 우성현;정지훈;이정헌;김형준
    • 한국결정성장학회지
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    • 제34권4호
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    • pp.131-138
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    • 2024
  • 본 연구에서는 소결된 알루미나 기판에 코팅된 35Bi2O3-15Al2O3-50SiO2(BiAlSiO) 및 35Bi2O3-7.5Al2O3-50SiO2-7.5AlF3(BiAlSiOF) 유리층의 미세구조와 플라즈마 저항 특성이 소결 조건에 따라 어떻게 변화하는지를 조사하였다. 코팅된 층은 바 코팅(bar Coating) 방법을 사용하여 형성되었으며, 이후 탈지 공정을 거쳐 반구 형성 온도 전/후인 700~900℃ 범위의 온도에서 소결 되었다. 내플라즈마성은 석영유리보다 두개의 코팅 유리가 약 2~3배 더 높았으며, F를 첨가한 BiAlSiOF는 BiAlSiO보다 높은 내플라즈성을 나타냈다. 이는 불소 첨가 효과로 판단된다. 소결 온도가 700℃에서 800℃로 증가함에 따라 두 유리 모두 내플라즈마성이 향상되었으나, 900℃까지 소결 온도를 증가시키면 내플라즈마성은 다시 감소한다(즉, 식각률이 높아진다). 이러한 현상은 두 유리의 결정화 거동과 관련 깊은 것으로 판단된다. 소결 조건에 따른 내플라즈마성의 변화는 Al과 Bi-rich 상의 출현여부에 관련된 것으로 생각된다.

Bi2O3-Al2O3-SiO2 유리의 열물성과 내플라즈마 특성 연구 (A Study on the Thermal Properties and Plasma Resistance of Bi2O3-Al2O3-SiO2 Glass)

  • 변영민;최재호;임원빈;김형준
    • 반도체디스플레이기술학회지
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    • 제22권1호
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    • pp.64-71
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    • 2023
  • In this study, we investigated the effects of BiAlSiO glass composition on its glass forming range, thermal properties, and plasma resistance. The results showed that increasing the Al2O3 content suppressed the tendency for crystallization and hindered glass formation beyond a certain threshold. Bi2O3 was found to increase the content of non-bridging oxygen, resulting in a decrease in glass transition temperature and an increase in thermal expansion coefficient. Furthermore, the etching rate was found to improve with increasing Al2O3 content but decrease with increasing SiO2 content. It was concluded that the boiling point of fluorinated compounds should be considered to 900℃. Therefore, this study is expected to contribute to the understanding of the properties of BiAlSiO glass and its application to low temperature melting PRG compositions.

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Characteristics of Carbon Tetrafluoride Plasma Resistance of Various Glasses

  • Choi, Jae Ho;Han, Yoon Soo;Lee, Sung Min;Park, Hyung Bin;Choi, Sung Churl;Kim, Hyeong Jun
    • 한국세라믹학회지
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    • 제53권6호
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    • pp.700-706
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    • 2016
  • Etch rate, surface roughness and microstructure as plasma resistance were evaluated for six kinds of oxide glass with different compositions. Borosilicate glass (BS) was found to be etched at the highest etch rate and zinc aluminum phosphate glass (ZAP) showed a relatively lower etch rate than borosilicate. On the other hand, the etching rate of calcium aluminosilicate glass (CAS) was measured to be similar to that of sintered alumina while yttrium aluminosilicate glass (YAS) showed the lowest etch rate. Such different etch rates by mixture plasma as a function of glass compositions was dependent on whether or not fluoride compounds were formed on glass and sublimated in high vacuum. Especially, in view that $CaF_2$ and $YF_3$ with high sublimation points were formed on the surface of CAS and YAS glasses, both CAS and YAS glasses were considered to be a good candidate for protective coating materials on the damaged polycrystalline ceramics parts in semi-conductor and display processes.

Plasma etching behavior of RE-Si-Al-O glass (RE: Y, La, Gd)

  • 이정기;황성진;이성민;김형순
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2010년도 춘계학술발표대회
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    • pp.49.1-49.1
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    • 2010
  • The particle generation during the plasma enhanced process is highly considered as serious problem in the semiconductor manufacturing industry. The material for the plasma processing chamber requires the plasma etching characteristics which are homogeneously etched surface and low plasma etching depth for preventing particulate contamination and high durability. We found that the materials without grain boundaries can prevent the particle generation. Therefore, the amorphous material with the low plasma etching rate may be the best candidate for the plasma processing chamber instead of the polycrystalline materials such as yttria and alumina. Three glasses based on $SiO_2$ and $Al_2O_3$ were prepared with various rare-earth elements (Gd, Y and La) which are same content in the glass. The glasses were plasma etched in the same condition and their plasma etching rate was compared including reference materials such as Si-wafer, quartz, yttria and alumina. The mechanical and thermal properties of the glasses were highly related with cationic field strength (CFS) of the rare-earth elements. We assumed that the plasma etching resistance may highly contributed by the thermal properties of the fluorine byproducts generated during the plasma exposure and it is expected that the Gd containing glass may have the highest plasma etching resistance due to the highest sublimation temperature of $GdF_3$ among three rare-earth elements (Gd, Y and La). However, it is found that the plasma etching results is highly related with the mechanical property of the glasses which indicates the cationic field strength. From the result, we conclude that the glass structure should be analyzed and the plasma etching test should be conducted with different condition in the future to understand the plasma etching behavior of the glasses perfectly.

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CaO-Al2O3-SiO2 계 벌크 유리와 스프레이 코팅막의 CF4/O2/Ar 플라즈마 식각 시 내식성 비교 (Comparison of plasma resistance between spray coating films and bulk of CaO-Al2O3-SiO2 glasses under CF4/O2/Ar plasma etching)

  • 나혜인;박제원;박재혁;김대근;최성철;김형준
    • 한국결정성장학회지
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    • 제30권2호
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    • pp.66-72
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    • 2020
  • 본 연구에서는 CaO-Al2O3-SiO2(CAS) 계 유리 벌크와 유리 분체를 알루미나 소결체 표면에 스프레이 코팅막 적용 시 내플라즈마 특성에 대하여 비교하였다. CAS 유리 벌크와 유리 코팅막을 CF4/O2/Ar 플라즈마 가스에 노출시켰을 때의 식각율과 표면의 미세구조 분석을 통해 내플라즈마 특성을 확인하였다. CAS 유리 소성막은 유리 벌크와 비교하여 에칭속도가 최대 25배 빠른 것을 확인하였다. 유리 소성막의 표면 조도 값과 식각율 간의 통계학적으로 높은 상관성을 도출하였고, 이에 따라 소성막의 높은 표면조도가 빠른 식각을 유발하는 것으로 판단하였다. 그리고 유리 소성막은 Ca 성분의 함량이 적고, Si 함량이 많은 크리스토발라이트(cristobalite) 결정의 형성으로 인하여 Ca과 Ca 불화물에 의한 내플라즈마 효과가 감소한 것으로 판단된다. 따라서 CAS 유리 소성막은 유리 벌크에 비해 낮은 내플라즈마 특성을 갖는 것으로 판단된다.

유리기판에 O2 플라즈마 표면처리 후 제작된 ITO 박막의 특성 (Characteristics of ITO Films Grown on an Oxygen Plasma Treated Glass Substrate)

  • 채홍철;홍주화
    • 대한금속재료학회지
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    • 제50권7호
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    • pp.545-548
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    • 2012
  • The optical and electronic properties of Indium Tin Oxide (ITO) thin films deposited on a RF-plasma treated glass substrate were investigated by X-Ray Photoelectron Spectroscopy (XPS), Ultra-violet Photoelectron Spectroscopy (UPS), Reflected Electron Energy Loss Spectroscopy (REELS). The modification of glass substrates was carried out by varying the time of the plasma surface treatment in an oxygen atmosphere. The focus of this research was to examine how the optical and electronic properties of ITO thin films change with the plasma treatment time. The surface energy increased since the carbon bonds were removed from the surface after the glass substrate received the surface treatment. The ITO thin films produced on the glass substrate with surface treatment showed that the high optical transmittance was approximately 85%. The measured band gap energy was as high as 3.23 eV when the plasma treatment time was 60 s and the work function after the treatment was increased by 0.5 eV in comparison to that before the treatment of 60 s. The ITO thin film exhibited an excellent sheet resistance of $2.79{\Omega}/{\Box}$. We found that the optical and electronic properties of ITO thin films can be improved by RF-plasma surface treatment.

플라즈마 및 니트로셀롤로우스로 처리된 유리기판을 사용한 MWCNT 스프레이 박막의 수소가스 검출특성 (Sensing Properties of Hydrogen Gas for the MWCNT Thin Film Sprayed on the Glass Substrate Cured with Plasma and Nitrocellulose)

  • 장경욱
    • 한국전기전자재료학회논문지
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    • 제24권4호
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    • pp.290-296
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    • 2011
  • Carbon nanotubes (CNTs) have excellent electrical, chemical stability, mechanical and thermal properties. In this paper, networks of Multi-walled carbon nanotube (MWCNT) materials were investigated as a resistive gas sensors for the $H_2$ gas detection. Sensor films were fabricated by the air spray method using the multi-walled CNTs dispersion solution on the glass substrates cured with plasma and nitrocellulose. Sensors were characterized by the resistance measurements in the self-fabricated oven in order to find the optimum detection properties for the hydrogen gas molecular. The sensitivity and the linearity of the MWVNT sensors using the glass substrate cured with plasma for the $H_2$ gas concentration of 0.06~0.6 ppm are 0.013~0.097%/sec and 0.131~0.959%FS, respectively. The MWCNT film was excellent in the response for the hydrogen gas moleculars and its reaction speed was very fast, which could be using as hydrogen gas sensor. The resistance of the fabricated sensors decreases when the sensors are exposed to $H_2$ gas.