• Journal of Powder Materials
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• v.12 no.5 s.52
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• pp.351-356
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• 2005

Nanoscale Al powder with thin layer of alumina was produced by Wire Electric Explosion (WEE) process. Spark-Plasma Sintering (SPS) was performed for the produced powder to confirm the effectiveness of SPS like so-called 'surface-cleaning effect' and so on. Crystallite size and alumina content of produced powder varied with the ratio of input energy to sublimation energy of Al wire ($e/e_s$): Increase in ($e/e_s$) resulted in the decrease of crystallite size and the increase of alumina content. Shrinkage curve during SPS process showed that the oxide surface layer could not be destroyed near the melting point of Al. It implied that there was not enough or no spark-plasma effect during SPS for Al/Alumina powder.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.371-378
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• 1996

An RF inductively coupled plasma (ICP) torch has been developed as a typical thermal plasma generator and reactor. It has been applied to various materials processings such as plasma flash evaporation, thermal plasma CVD, plasma spraying, and plasma waste disposal. The RF ICP reactor has been generally operated under one atmospheric pressure. Lately the characteristics of low pressure RF ICP is attracting a great deal of attention in the field of plasma application. In our researches of RF plasma applications, low pressure RF ICP is mainly used. In many cases, the plasma generated by the ICP torch under low pressure seems to be rather capacitive, but high density ICP can be easily generated by our RF plasma torch with 3 turns coil and a suitable maching circuiit, using 13.56 MHz RF generator. Plasma surface modification (surface hardening by plasma nitriding and plasma carbo-nitriding), plasma synthesis of AIN, and plasma CVD of BN, B-C-N compound and diamond were practiced by using low pressure RF plasma, and the effects of negative and positive bias voltage impression to the substrate on surface modification and CVD were investigated in details. Only a part of the interesting results obtained is reported in this paper.

• Proceedings of the Korean Vacuum Society Conference
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• 2004.02a
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• pp.170-170
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• 2004

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1736-1741
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• 2003

The characteristics plasma flow of an atmospheric plasma torch used for thermal plasma processing is studied. In general, it is produced by the arc-gas interactions between a cathode tip and an anode nozzle. The performance of non-transferred plasma torch is significantly dependent on jet flow characteristics out of the nozzle. In this work, the distribution of gas flow that goes out to the atmosphere through a plenum chamber and nozzle is analyzed to evaluate the performance of atmospheric plasma torch. Numerical analysis is carried out with various angles of an inlet flow which can create different swirl flow fields. Moreover, the size of plasma plume is experimentally depicted.

• Transactions on Electrical and Electronic Materials
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• v.2 no.2
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• pp.1-4
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• 2001

Urgency of using plasma-energy technologies in power industry, is outlined, increasing of economical efficiency, decreasing of energy consumption and decreasing of environmental pollution, are shown, scientific and technical bases for plasma-energy technologies of fuel utilisation, are designed, results of theoretical, experimental and rig investigations of processes of plasma ignition, gasification, thermochemical preparation for burning and combined processing of coals, are presented, results of realisation of plasma technologies of residual-oil-free (mazout) pulverised-coal boiler kindling, lighting of torch and stabilisation of luid slagging in furnaces with removal of fluid slag, are described.

• Nuclear Engineering and Technology
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• v.44 no.1
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• pp.1-8
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• 2012

Thermal plasma technology has been at the center of major developments over the past century. It has found numerous applications ranging from aerospace materials testing to nanopowder synthesis and processing. In the present review highlights of principal breakthroughs in this field are presented with emphasis on an analysis of the basic phenomena involved, and the potential of the technology for industrial scale applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.472-472
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• 2011

The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity, but also low electron temperature. But CCP source has some problems, such as difficulty in varying the ion bombardment energy separately, low plasma density, and high processing pressure, etc. In this reason, dual frequency CCP has been investigated with a separate substrate biasing to control the plasma parameters and to obtain high etch rate with high etch selectivity. Especially, in this study, we studied on the etching of $SiO_2$ by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, as the size of the semiconductor device is decreased to nano-scale, the etching of contact hole which has nano-scale higher aspect ratio is required. For the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.67-68
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• 2008

A simple bi-layer structure of organic light emitting diode (OLED) was used to study the characteristics of anode preparation. Indium tin oxide (ITO) anode surface treatment of OLEDs was performed to get the optimum condition for the ITO anode. The ITO surface was treated by $O_2$ or $O_2$ / Ar mixed gas plasma with different processing time. The electrical characteristics of OLED were improved by plasma treatment. The operating voltage of OLED with $O_2$ or $O_2$/Ar mixed gas plasma treated anodes decreases from 8.2 to 3.4 V and 3.2V, respectively. The $O_2$ /Ar mixed gas plasma treatment results in better electrical property.

• Textile Coloration and Finishing
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• v.19 no.4
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• pp.38-46
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• 2007

Surface properties of the plasma treated fabric were changed while maintaining its bulk properties. Surface of plasma treated fabric take charge of enhanced adhesion by surface etching, surface activity. The water repellency coating Poly(Ethylene Terephthalate) fabric was treated with atmospheric pressure plasma using various parameters such as Argon gas, treatment time, processing power. Morphological changes by atmospheric pressure plasma treatment were observed using field emmission scanning electron microscopy(FE-SEM) and the zeta-potential measurement, contact angle measurement equipment. At the atmospheric pressure plasma treatment time of 150 sec, the power of 800W, the best wettability and peel strength were obtained. And we confirmed the possibility of industrial application by using atmospheric plasma system.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.11-14
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• 2005

In plasma processing reactors, it is common practice to control plasma density and ion bombardment energy by manipulating excitation voltage and frequency. In this paper, a dually excited capacitively coupled rf plasma reactor is self-consistently simulated with a three moment model. Effects of phase differences between primary and secondary voltage waves, simultaneously modulated at various combinations of commensurate frequencies, on plasma properties are investigated. The simulation results show that plasma potential and density as well as primary self-dc bias are nearly unaffected by the phase lag between the primary and the secondary voltage waves. The results also show that, with the secondary frequency substantially lower than the primary frequency, secondary self·do bias remains constant regardless of the phase lag. As the secondary frequency approaches to the primary frequency, however, the secondary self-dc bias becomes greatly altered by the phase lag, and so does the ion bombardment energy at the secondary electrode. These results demonstrate that ion bombardment energy can be more carefully controlled through plasma simulation.