• 제어로봇시스템학회:학술대회논문집
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• 2002.10a
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• pp.46.2-46
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• 2002

Plasma processing plays a crucial role in fabricating integrated circuits (ICs). Manufacturing ICs in a cost effective way, it is increasingly demanded a computer model that predicts plasma properties to unknown process inputs. Physical models are limited in the prediction accuracy since they are subject to many assumptions. Expensive computation time is another hindrance that prevents their widespread used in manufacturing site. To circumvent these difficulties inherent in physical models, neural networks have been used to learn nonlinear plasma data [1]. Among many types of networks, a backpropagation neural network (BPNN) is the most widely used architecture. Many training variables are...

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.933-936
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• 2007

An inductively coupled plasma source with internaltype linear inductive antennas named as "multiple Utype antenna" was developed for the substrate size of $2,300mm\;{\times}\;2,000mm$. High density plasmas on the order of $1.18\;{\times}\;10^{11}\;cm^{-3}$ could be obtained and the RF power of 8kW with good plasma stability.

• Journal of the Korean institute of surface engineering
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• v.50 no.6
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• pp.486-491
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• 2017

Silver nanowire (AgNW) transparent electrode is one of next generations of flexible and transparent electrode. The electrode shows high conductivity and high transparency comparable to ITO. However, the electrode is weak against heat. The wires are separated into nanodots at temperature above $200^{\circ}C$. It causes the electrical resistance increase. Moreover, it is vulnerable to oxygen and moisture in the atmosphere. The improvement of thermal and moisture resistance of silver nanowire transparent electrode is the most important for commercializing. We proposed silver nanowires transparent electrode which is capped with very thin nickel oxide layer. The nickel oxide layer is five nanometers of thickness, but the heat and moisture resistance of the transparent electrode is effectively improved. The AgNW/NiO electrode can endure at $300^{\circ}C$ of temperature for 30 minutes, and resistance is not increased for 180 hours at $85^{\circ}C$ of temperature and 85% of relative humidity. We showed an applications of transparent and flexible heater using the electrode, the heater is operated more than $180^{\circ}C$ of temperature.

• Korean Journal of Metals and Materials
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• v.49 no.11
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• pp.853-859
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• 2011

Compressive deformation behavior of Al-10Si-5Fe-1Zr (wt%) alloy preform fabricated by SPS(spark plasma sintering) of gas atomized powder was investigated in the temperature range from 380 to $480^{\circ}C$ and at strain rates from $1.0{\times}10^{-3}$ to $1.0{\times}10^{0}s^{-1}$. Stress-strain curves showed a peak stress (${\sigma}_p$) during initial stage of deformation, followed by a steady state flow at all temperatures and strain rates tested. The (${\sigma}_p$) decreased with both increase in temperature and decrease in strain rate. Nearly full densification was found to occur in the compressively deformed specimens irrespective of test condition. TEM observation revealed a restricted grain growth during steady state flow.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.395-402
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• 2001

An induction thermal plasma system have been newly designed for advanced operation with a pulse modulated mode to control the plasma power in time domain and to create non-equilibrium effects such as fast quenching of the plasma to produce new functional materials in high rate. The system consists of MOSFET power supply with a maximum power of 50 kW with a frequency of 460 kHz, an induction plasma torch with a 10-turns coil of 80 mm diameter and 150 mm length and a vacuum chamber. The pulse modulated plasma was successfully generated at a plasma power of 30 kW and a high pressure of 100 kPa, with taking the on and off time as 10 ms, respectively. Measurements were carried out on the time-dependent spectral lines emitted from Ar species. The dynamic behavior of plasma temperature in a pulse cycle was estimated by the Boltzmann plot and the excitation temperature of Ar atom was found to be changed periodically from around 0.5 to 1.7 eV during the cycle. Two application regions of the induction thermal plasma newly generated were introduced to material processing with high rate synthesis based on non equilibrium effects, and to the finding of new arc quenching gases coming necessary for power circuit breaker, which is friendly with earth circumstance alternative to SF6 gas.

• The Transactions of the Korean Institute of Power Electronics
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• v.15 no.4
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• pp.274-281
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• 2010

This paper proposes a DFPS (Dual Frequency Power Source) impedance matching device for uniformity improvement of a semiconductor plasma etching system. The DFPS consists of two parts for safe plasma processing on large-area substrates. The first part is an ICP (Inductively Coupled Plasma) for high integration by using ferrite core. The second part is a CCP (Capacitive Coupled Plasma) to control uniformity of whole cells. Proposed DFPS can achieve high productivity improvement required for semiconductor equipment industry. The proposed plasma system is analyzed, simulated and experimentally verified with a matching equipment at 27.12MHz and 400kHz.

• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.28-33
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• 2020

Plasma etching process employs high density plasma to create surface chemistry and physical reactions, by which to remove material. Plasma chamber includes silicon-based materials such as a focus ring and gas distribution plate. Focus ring needs to be replaced after a short period. For this reason, there is a need to find materials resistant to erosion by plasma. The developed chemical vapor deposition processing to produce silicon carbide parts with high purity has also supported its widespread use in the plasma etch process. Silicon carbide maintains mechanical strength at high temperature, it have been use to chamber parts for plasma. Recently, besides the structural aspects of silicon carbide, its electrical conductivity and possibly its enhanced life time under high density plasma with less generation of contamination particles are drawing attention for use in applications such as upper electrode or focus rings, which have been made of silicon for a long time. However, especially for high purity silicon carbide focus ring, which has usually been made by the chemical vapor deposition method, there has been no study about quality improvement. The goal of this study is to reduce surface roughness and depth of damage by diamond tool grit size and tool dressing of diamond tools for precise dimensional assurance of focus rings.

• Journal of Ocean Engineering and Technology
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• v.25 no.1
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• pp.56-60
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• 2011

A low temperature plasma carburizing process was performed to AISI 304L austenitic stainless steel to achieve the enhancement of surface hardness without a compromise in their corrosion resistance. Attempts were made to investigate the influence of the processing temperatures on the surface-hardened layer during low temperature plasma carburizng in order to obtain the optimum processing conditions. The expanded austenite (${\gamma}C$) was formed on all the treated surfaces. Precipitates of chromium carbides were detected in the hardened layer (C-enriched layer) only for the specimen treated at $500^{\circ}C$. The hardened layer thickness of ${\gamma}C$ increased up to about $35\;{\mu}m$, with increasing treatment temperature. The surface hardness reached about 1000 $HK_{0.05}$, which is about 4 times higher than that of the untreated sample (250 $HK_{0.05}$). Minor loss in corrosion resistance was observed for the specimens treated at temperatures of $310^{\circ}C-450^{\circ}C$ compared with untreated austenitic stainless steel. Particularly, the precipitation of chromium carbides at $500^{\circ}C$ led to a significant decrease in the corrosion resistance.

• Journal of Microbiology and Biotechnology
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• v.14 no.5
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• pp.972-977
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• 2004

The hypoglycemic effect of an exo-biopolymer (EXO) and endo-biopolymer (ENDO) produced from submerged mycelial culture of Ganoderma lucidum was investigated in streptozotocin (STZ)-induced diabetic rats. Both the EXO and ENDO showed hypoglycemic potential, however, the former proved to be more potent than the latter. The administration of the EXO at the dose of 100 mg/kg body weight (BW) significantly reduced the plasma glucose level (23.5%) and increased the plasma insulin level (2.2 fold) in the diabetic animals. The EXO also lowered the plasma total cholesterol, triglyceride, low-density lipoprotein (LDL) cholesterol, and athrogenic index by 14.7, 31.4, 24.1, and 45.4%, respectively, and reduced the liver total cholesterol and triglyceride levels by 6.7 and 25.8%, respectively. It increased the plasma high-density lipoprotein (HDL) cholesterol (37.7%), compared to the control group. Furthermore, the alanine transaminase (ALT) and aspartate transaminase (AST) showed lower activities in the EXO administered groups than the other experimental groups. Taken together, these results suggest that the exo-biopolymer may alleviate the blood glucose level by increased insulin secretion.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.98-103
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• 2016

The dry etching characteristics of SnO thin films were investigated using inductively coupled plasma (ICP) in Ar, $CF_4$, $Cl_2$ chemistries. the SnO thin films were deposited by reactive rf magnetron sputtering with Sn metal target. In order to study the etching rates of SnO, the processing factors of processing pressure, source power, bias power, and etching gas were controlled. The etching behavior of SnO films under various conditions was obtained and discussed by comparing to that of $SiO_2$ films. In our results, the etch rate of SnO film was obtained as 94nm/min. The etch rates were mainly affected by physical etching and the contribution of chemical etching to SnO films appeared relatively week.