• Title/Summary/Keyword: Plasma processing

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Time-dependent Characteristics of Pulse Modulated rf Plasma (펄스모듈레이션 된 고주파 플라즈마의 시변특성)

  • Lee Sun-Hong;Park Chung-Hoo;Lee Ho-Jun
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.11
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    • pp.566-571
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    • 2004
  • Pulse modulation technique provide additional controling method for electron temperature and density in rf and microwave processing plasma. Transient characteristics of electron density and temperature have been measured in pulse modulated rf inductively coupled argon plasma using simple probe circuit. Electron temperature relaxation is clearly identified in the after glow stage. Controllability of average electron temperature and density depends on the modulation frequency and duty ratio. Numerical calculation of time-dependent electron density and temperature have been performed based on the global model. It has been shown that simple langmuir probe measurement method used for continuous plasma is also applicable to time-dependent measurement of pulse modulated plasma.

Electromagnetic Field Distribution of Electrodeless Fluorescent Lamps (무전극 형광램프의 페라이트 특성변화에 따른 전자계 분포)

  • 김광수;이영환;조주웅;최용성;박대희
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.2
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    • pp.79-82
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    • 2004
  • The RF inductive discharge or inductively coupled plasma (ICP) continues to attract growing attention as an effective plasma source in many industrial applications, the best known of which are plasma processing and lighting technicology. Although most practical ICP operate at 13.56 [MHz]and 2.65 [MHz], the trend to reduce the operating frequency is clearly recognizable from recent ICP developments. In an electrodeless fluorescent lamp, the use of a lower operating frequency simplifies and reduces cost of rf matching systems and rf generators and can eliminate capacitive coupling between the inductor coil and plasma, which could be a strong factor in wall erosion and plasma contamination. In this study, the configuration of ferrite and fixture which operates at the frequency of 2.65[MHz]was discussed as functions of the ferrite thickness and distance by using the electromagnetic simulation software (Maxwell 2D).

Numerical Modeling of Plasma Characteristics of ICP System with a Pulsed dc Bias (수치모델을 이용한 pulsed dc bias ICP장치의 플라즈마 특성 해석)

  • Joo, Jung-Hoon
    • Journal of the Korean institute of surface engineering
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    • v.43 no.3
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    • pp.154-158
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    • 2010
  • Numerical analysis is done to investigate the effects of pulse bias on the plasma processing characteristics like ion doping and ion nitriding by using fluid dynamic code with a 2D axi-symmetric model. For 10 mTorr of Ar plasma, -1 kV of pulse bias was simulated. Maximum sheath thickness was around 20 mm based on the electric potential profile. The peak electron temperature was about 20 eV, but did not affect the averaged plasma characteristics of the whole chamber. Maximum ion current density incident on the substrate was 200 $A/m^2$ at the center, but was decreased down to 1/10th at radius 100 mm, giving poor radial uniformity.

Study of Parameters of the Plasma Electrolyte Polishing on the Stainless Steel (스테인레스강의 폴리싱에 미치는 전해질 플라즈마 영향)

  • Lee, W.H.;Kim, J.R.;Kim, S.G.;Kim, S.H.;Kim, S.W.
    • Journal of the Korean Society for Heat Treatment
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    • v.22 no.4
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    • pp.223-227
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    • 2009
  • The feasibility of plasma electrolytic polishing technology of stainless steel was examined. The results show that austenitic stainless steel can be polished clearly using potentiostatic regimes with various concentration of ammonium sulfate ($(NH_4)_2SO_4$) solution above certain initial temperature. The equipment and deposition produces for polishing process are described and the effect of processing parameters on the characterizations polished-samples has been investigated.

A spectroscopic study of the effect of humidity on the atmospheric pressure helium plasma jets

  • Han, Duksun
    • Current Applied Physics
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    • v.18 no.11
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    • pp.1375-1380
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    • 2018
  • Atmospheric-pressure plasma has a great potential in many applications due to its simplicity rather than low pressure plasmas. In material processing, biomedical applications, and many other applications, the input power, gas flow rate, and the geometry of electrode have been mainly considered and studied as important external parameters of atmospheric-pressure plasma control. Besides, since the atmospheric-pressure plasmas are typically generated in an open air, the relative humidity is difficult to control and can change day by day. Therefore, the relative humidity cannot be ignored for plasmas. Thus, in this work, the atmospheric-pressure plasma jet was characterized by changing relative humidity, and it was found that the increase in electron density and OH radicals are due to Penning ionization between helium metastable and water vapors at higher humidity condition.

Effects of Plasma Treatment on the Reliability of a-IGZO TFT

  • Xin, Dongxu;Cui, Ziyang;Kim, Taeyong;Yi, Junsin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.34 no.2
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    • pp.85-89
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    • 2021
  • High reliability thin film transistors are important factors for next-generation displays. The reliability of transparent a-IGZO semiconductors is being actively studied for display applications. A plasma treatment can fill the oxygen vacancies in the channel layer and the channel layer/insulating layer interface so that the device can work stably under a bias voltage. This paper studies the effect of plasma treatment on the performance of a-IGZO TFT devices. The influence of different plasma gases on the electrical parameters of device and its working reliability are reviewed. The article mentions argon, fluorine, hydrogen and several ways of processing in the atmosphere. Among these methods, F (fluorine) plasma treatment can maximize equipment reliability. It is expected that the presented results will form a basis for further research to improve the reliability of a-IGZO TFT.

Studies on the formation of CrN surface layer by chromizing and plasma nitriding (Chromizing과 이온 질화에 의한 CrNvyaus층 형성에 관한연구)

  • Park, H. J.;Lee, S. Y.;Yang, S. C.;Lee, S. Y.;Kim, S. S.;Han, J. G.
    • Journal of the Korean institute of surface engineering
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    • v.31 no.6
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    • pp.334-344
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    • 1998
  • Yew coating pmccss t.o form a surface layer ol CrN phasc on mild steel (A81 1020!, AlSI Hi3, 1Cr-0.5Mo steel (ASTM A213 and Nickrl-base superalloy (Inconel 718) was developed. Surlaces of various alloys t,n.ateii by chromizing for the formation ol Cr diffusion layer was subsequently trcaled by plasma nitriding in order t.o form the hard CrS coating layer on the surfaces. This duplex plasma surface tri-atments of chromizing and plasma nitriding have induced a lormation of a duplex-lrcated surfacr hyer of approximat~ls 70-80 $\mu\textrm{m}$thickncss with a iargcly improved microiiardnrss up to approxiniateW 1500Hv(50gf). The main cause for the lage improvment in the surface hardncss is altribilted to [.he fact that CrN and $Fe_xN$ phases are created successfully by ccliromizins and plasma nilriding treatment. High tenipera1,urc wear resislance of the duplex-treated mild steel and HI3 steels at $600^{\circ}C$ was examined. Comparing the duplex-treated specimens with the specimens treated only by chromizing, the rcsults shovmi that, thc wear volume of the duplex-treated mild skcl and 1113 stcel aSt.er a wear test, at $600^{\circ}C$ were reduced hy a Iactor of 8 and 3, respectively. Characteristics of the CrS phase by duplrx treatment were compared with $CrN_x$,/TEX> film by ion plating and the wear behaviors of CrN film lormed by two different nroccsses arc nea.riy identical.

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Comparison of PCB Surface Treatment Effect Using UV Equipment and Atmospheric Pressure Plasma Equipment (UV 장비 및 대기압 플라즈마 장비를 이용한 PCB 표면 처리 효과 비교)

  • Ryu, Sun-Joong
    • Journal of the Microelectronics and Packaging Society
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    • v.16 no.3
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    • pp.53-59
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    • 2009
  • Low pressure mercury lamp type UV equipments have been widely used for cleaning and modification of PCB surfaces. To enhance the productivity of the process, we newly developed remote DBD type atmospheric pressure plasma equipment. The productivity of both equipments could be compared by measuring surface contact angle for various transferring speed. By the result of the measurement, we could verify that the productivity of the atmospheric pressure plasma be superior to the productivity of the UV equipment. XPS experiments confirmed that the surface effect of the UV and atmospheric pressure plasma processing are similar for each other. Organic contamination level was reduced after the processing and some surface elements were oxidized for both cases. Finally, the atmospheric pressure plasma equipment was adapted to flip chip BGA's flux printing process and it was concluded that the printing uniformity be enhanced by the atmospheric pressure plasma surface treatment.

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A GRNN Classification of Statistically Designed Experiment

  • Kim, Kunho;Kim, Byungwhan
    • 제어로봇시스템학회:학술대회논문집
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    • 2002.10a
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    • pp.89.3-89
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    • 2002
  • Plasma processing plays a crucial role in fabricating integrated circuits (ICs). Manufacturing ICs in a cost effective way, it is increasingly demanded a computer model that predicts plasma properties to unknown process inputs. Physical models are limited in the prediction accuracy since they are subject to many assumptions. Expensive computation time is another hindrance that prevents their widespread used in manufacturing site. To circumvent these difficulties inherent in physical models, neural networks have been used to learn nonlinear plasma data. A generalized regression neural network (GRNN) [I] is one of the architectures that have been widely used to analyze complex chemical data. I...

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