• Title/Summary/Keyword: Plasma plume

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Real Time Monitoring of Ionic Species Generated from Laser-Ablated Pb$(Zr_{0.52}Ti_{0.48})O_3$ Target Using Pulsed-Field Time-Of-Flight Mass spectrometer

  • 최영구;임훙선;정광우
    • Bulletin of the Korean Chemical Society
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    • v.19 no.8
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    • pp.830-835
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    • 1998
  • The characteristics of the ablation plume generated by 532 nm Nd: YAG laser irradiation of a Pb(Zr0.52Ti0.48)O3 (PZT) target have been investigated using a pulsed-field time-of-flight mass spectrometer (TOFMS). The relative abundance of O+, Ti+, Zr+, Pb+, TiO+, and ZrO+ ions has been measured and discussed. TiO+ and ZrO+ ions were also found to be particularly stable within the laser ablation plasma with respect to PbO+ species. The behavior of the temporal distributions of each ionic species was studied as a function of the delay time between the laser shot and the ion extraction pulse. The most probable velocity of each ablated ion is estimated to be Vmp=1.1-1.6x 105 cm/s at a laser fluence of 1.2 J/cm2, which is typically employed for the thin film deposition of PZT. The TOF distribution of Ti+ and Zr+ ions shows a trimodal distribution with one fast and two slow velocity components. The fast velocity component (6.8x 10' cm/s) appears to consist of directly ablated species via nonthermal process. The second component, originated from the thermal evaporation process, has a characteristic velocity of 1.4-1.6 x 105 cm/s. The slowest component (1.2 x 105 cm/s) is composed of a dissociation product formed from the corresponding oxide ion.

Electrical properties of n-ZnO/p-Si heterojunction photovoltaic devices

  • Kang, Ji Hoon;Lee, Kyoung Su;Kim, Eun Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.306.1-306.1
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    • 2016
  • ZnO semiconductor material has been widely utilized in various applications in semiconductor device technology owing to its unique electrical and optical features. It is a promising as solar cell material, because of its low cost, n-type conductivity and wide direct band gap. In this work ZnO/Si heterojunctions were fabricated by using pulsed laser deposition. Vacuum chamber was evacuated to a base pressure of approximately $2{\times}10^{-6}Torr$. ZnO thin films were grown on p-Si (100) substrate at oxygen partial pressure from 5mTorr to 40mTorr. Growth temperature of ZnO thin films was set to 773K. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnO target, whose density of laser energy was $10J/cm^2$. Thickness of all the thin films of ZnO was about 300nm. The optical property was characterized by photoluminescence and crystallinity of ZnO was analyzed by X-ray diffraction. For fabrication ZnO/Si heterojunction diodes, indium metal and Al grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. Finally, current-voltage characteristics of the ZnO/Si structure were studied by using Keithly 2600. Under Air Mass 1.5 Global solar simulator with an irradiation intensity of $100mW/cm^2$, the electrical properties of ZnO/Si heterojunction photovoltaic devices were analyzed.

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Intermediate band solar cells with ZnTe:Cr thin films grown on p-Si substrate by pulsed laser deposition

  • Lee, Kyoung Su;Oh, Gyujin;Kim, Eun Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.247.1-247.1
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    • 2016
  • Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, ZnO/ZnTe:Cr and ZnO/i-ZnTe structures were fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 10 J/cm2. The base pressure of the chamber was kept at approximately $4{\times}10-7Torr$. ZnTe:Cr and i-ZnTe thin films with thickness of 210 nm were grown on p-Si substrate, respectively, and then ZnO thin films with thickness of 150 nm were grown on ZnTe:Cr layer under oxygen partial pressure of 3 mTorr. Growth temperature of all the films was set to $250^{\circ}C$. For fabricating ZnO/i-ZnTe and ZnO/ZnTe:Cr solar cells, indium metal and Ti/Au grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. From the fabricated ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cell, dark currents were measured by using Keithley 2600. Solar cell parameters were obtained under Air Mass 1.5 Global solar simulator with an irradiation intensity of 100 mW/cm2, and then the photoelectric conversion efficiency values of ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cells were measured at 1.5 % and 0.3 %, respectively.

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ZnTe:O/CdS/ZnO intermediate band solar cells grown on ITO/glass substrate by pulsed laser deposition

  • Lee, Kyoung Su;Oh, Gyujin;Kim, Eun Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.197.2-197.2
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    • 2015
  • Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, the ZnTe:O/CdS/ZnO structure was fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 4.5 J/cm2. The base pressure of the chamber was kept at a pressure of approximately $4{\times}10-7Torr$. ZnO thin film with thickness of 100 nm was grown on to ITO/glass, and then CdS and ZnTe:O thin film were grown on ZnO thin film. Thickness of CdS and ZnTe:O were 50 nm and 500 nm, respectively. During deposition of ZnTe:O films, O2 gas was introduced from 1 to 20 mTorr. For fabricating ZnTe:O/CdS/ZnO solar cells, Au metal was deposited on the ITO film and ZnTe:O by thermal evaporation method. From the fabricated ZnTe:O/CdS/ZnO solar cell, current-voltage characteristics was measured by using HP 4156-a semiconductor parameter analyzer. Finally, solar cell performance was measured using an Air Mass 1.5 Global (AM 1.5 G) solar simulator with an irradiation intensity of 100 mW cm-2.

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Development and Experiments of the Low Power Hall Thruster for STSAT-3 (과학기술위성 3호 탑재를 위한 저전력 홀 추력기 개발 및 시험)

  • Lee, Jong-Sub;Seo, Mi-Hui;Seon, Jong-Ho;Choe, Won-Ho
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2009.11a
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    • pp.298-302
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    • 2009
  • Low power Hall thruster is under development as one of the core technologies for STSAT-3. The Hall thruster has several advantages such as its simple structure, high thrust density and specific impulse etc. Development target values deduced by analyzing requirements are consumed electrical power, thrust, thrust efficiency, and specific impulse of < 300 W, > 10 mN, ~ 35%, and > 1000 s, respectively. In order to achieve the target specifications, two prototype Hall thrusters were developed and compared. To date, thrust and efficiency are 11 mN and 37% under the total power of 290 W with 0.97 mg/s Xe propellent supply.

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Gadanki radar observations of F-region irregularities during June solstice of solar minimum: First results and preliminary analysis

  • Kumar, D.V. Phani;Patra, A.K.;Kwak, Y.S.;Pant, T.K.
    • Bulletin of the Korean Space Science Society
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    • 2009.10a
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    • pp.38.1-38.1
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    • 2009
  • In this paper we present the first results of summer-time F region irregularities during low solar condition observed using the Gadanki MST radar. Echoes were observed on all 20 nights of radar observations and were mostly confined to the post-midnight hours. Echo morphology is very different from the equinoxial post-sunset plume-like features reported earlier from Gadanki. Echo SNRs are lower by 25 dB than their equinoxial post-sunset counterpart, and are quite comparable to the equinoxial irregularities in the post-midnight hours, which are essentially the decaying post-sunset irregularities. The Doppler velocities, which lie in the range of $\pm$ 100 m s-1, show upward/northward motion of the irregularities during the initial phase in contrast to the observed predominant downward/southward velocities associated with the decaying equinoxial post-midnight F region irregularities. Spectral widths of the summer echoes, which are well below 50 m s-1 and are very similar to those of the decaying equinoxial irregularities, represent the presence of weak plasma turbulence. Simultaneous observations made using a collocated ionosonde show no ionogram trace during 2200-0530 LT except for a few occasions. Weak frequency type spread F observed during midnight hours occurred without prior occurrence of range spread F. Concurrent ionosonde observations made from magnetic equatorial location Trivandrum also show very similar result and thus no height rise of the F layer during the midnight hours could be monitored. The preliminary analysis suggests that the post-midnight irregularities reported here are mostly freshly generated ones. The observations are discussed in the light of other observational results reported earlier and the current under standing on the post-midnight occurrence F region irregularities in summer.

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