• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.145-148
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• 2001

A large area plasma source using parallel $2{\times}2$ ICP antennas showed improved etching uniformity by the E-ICP operation. ITO etching process with $CH_4$ gas chemistry is optimized with the DOE (Design of Experiment) based on Taguchi method. Various methane ratios in methane and argon mixture are compared to confirm the effect of polymerization. The analysis shows that the effect of bias power is the largeset. We obtained higher ITO etching rate and better uniformity on $350{\times}300mm$ substrate at the 50Hz magnetization frequency of the E-ICP operation technique,

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.145-148
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• 2001

A large area plasma source using parallel 2x2 ICP antennas showed improved etching uniformity by the E-ICP operation. ITO etching process with CH$_4$ gas chemistry is optimized with the DOE(Design of Experiment) based on Taguchi method. Various methane ratios in methane and argon mixture are compared to confirm the effect of polymerization. The analysis shows that the effect of bias power is the largeset. We obtained higher ITO etching rate and better uniformity on 350x300mm substrate at the 50Hz magnetization frequency of the E-ICP operation technique.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.77-78
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• 2000

We verified the charged static electricity on LCD glass influences upon the etching uniformity of dry etching process by plasma. In the TFT-LCD manufacturing process, we mainly paid attention to eliminate the static electricity for TFT reliability. The static electricity caused the serious ununiformity of etching surface profile and etching rate in the dry etch process. Through our experiment on the made static electricity from -200V to -1000V, it was confirmed that the static electricity on LCD glass caused the etching rate variation of $1.5%{\sim}15%$. We recommend the etching process equipment for LCD manufacturing have to establish the soft X-ray exposure module system for eliminating the static electricity inside the loading and unloading chamber.

• Transactions on Electrical and Electronic Materials
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• 제12권3호
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• pp.106-109
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• 2011

We investigated the etching characteristics of titanium nitride (TiN) thin film in $BCl_3$/Ar inductively coupled plasma. The etching parameters were the gas mixing ratio, radio frequency (RF) power, direct current (DC)-bias voltages and process pressures. The standard conditions were as follows: total flow rate = 20 sccm, RF power = 500 W, DC-bias voltage = -100 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate of TiN thin film and the selectivity of TiN to $Al_2O_3$ thin film were 54 nm/min and 0.79. The results of X-ray photoelectron spectroscopy showed no accumulation of etch byproducts from the etched surface of TiN thin film. The TiN film etch was dominated by the chemical etching with assistance by Ar sputtering in reactive ion etching mechanism, based on the experimental results.

• Journal of the Microelectronics and Packaging Society
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• 제7권2호
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• pp.1-6
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• 2000

X-ray lithography mask with SiC membrane and Ta absorber patterns has been fabricated using ECR plasma CVD, d.c. magnetron sputtering, and ECR plasma etching. The stress of stoichiometric SiC film was adjusted by rapid thermal annealing under $N_2$, ambient. Adjusting the working pressure during sputtering process resulted in a near-zero residual stress, reasonable density, and smooth surface morphology of Ta film. Cl-based plasma showed a good etching characteristics of Ta, and two-step etching process was implemented to suppress microloading effect fur sub-quarter $\mu\textrm{m}$ patterning.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제14권2호
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• pp.158-162
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• 2001

In this report, a new process for patterning of YBaCuO thin films, ICP(inductively coupled plasma) method, is described by comparing with existing wet etching method. Two 100㎛ wide and 2mm long YBaCuO striplines on LaAlO$_3$ substrates have been fabricated using two patterning techniques. And the properties were compared with the critical temperature and the SEM photography. Then, the critical temperatures of two samples were about 88 K, but the cross section of sample using ICP method was shaper than that using the wet etching method. ICP method can be used as a good etching technique process for patterning of YBaCuO superconductor.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.390-390
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• 2012

Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

• Corrosion Science and Technology
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• 제2권5호
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• pp.243-246
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• 2003

We have used a plasma etching method in order to develop a concave-type Pt electrode capacitor to overcome the limitation of conventional stack-type capacitor in a small critical-dimension (CD) pattern. We have deposited Pt layer on the concave-type structure made by patterning of $SiO_2$ and subsequently we separated the adjacent nodes by etch-back process with photoresist (PR) as a protecting layer.

• Design & Manufacturing
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• 제12권1호
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• pp.47-51
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• 2018

As the IT industry rapidly progresses, the functions of electronic devices and display devices are integrated with high density, and the model is changed in a short period of time. To implement the integration technology, a uniform micro-pattern implementation technique to drive and control the product is required. The most important technology for the micro pattern generation is the exposure processing technology. Failure to implement the basic pattern in this process cannot satisfy the demands in the manufacturing field. In addition, the conventional exposure method of the mask method cannot cope with the small-scale production of various types of products, and it is not possible to implement a micro-pattern, so an alternative technology must be secured. In this study, the technology to implement the required micro-pattern in semiconductor processing is presented through the photolithography process and plasma etching.

• Proceedings of the KIEE Conference
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1343-1345
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• 1998

This work was carried out to develop a pattern on the nanometer scale using plasma polymerization and plasma etching. This study is also aimed at developing a resist for the nano process and a vacuum lithography process. The thin films of plasma polymerization were fabricated by the plasma polymerization of inter-electrode capacitively coupled gas flow system. After delineating the pattern at accelerating voltage of 30[kV], ranging the dose of $1-500[{\mu}C/cm^2$], the pattern was developed with dry type and formed by plasma etching.