• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1376-1377
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• 2006

본 연구에서는 고밀도 플라즈마 식각 시스템을 이용하여 contact hole 식각을 연구하였다. 실험은 공정 변수에 따른 식각 특성을 변화를 SEM 분석을 이용하여 보였으며 공정 압력 증가에 따른 contact hole 패턴의 하부 및 측면이 vertical 하지 못한 현상을 볼 수 있었으며 이는 과도한 라디컬 생성으로 인하여 식각 반응 부산물과 폴리머가 식각 패턴 밖으로 탈착되지 못하여 나타나는 것으로 생각되며 하부 bias 전력을 증가시킴으로써 식각 반응 부산물과 폴리머의 탈착을 도와 식각 프로파일 개선에 영향을 줌을 확인하였다. 또한, 본 장비의 낮은 전자온도 등의 특성으로 인하여 PR의 degradation 현상 등이 나타나지 않았다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.8-11
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• 2001

In this study. the recovery of plasma induced damage in the etched PZT thin film with $O_2$ re-annealing have been investigated. The PZT thin films were etched as a function of $Cl_2/Ar$ and additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etch rates of PZT thin films were $1600\dot{A}/min$ at $Cl_{2}(80%)/Ar(20)%$ gas mixing ratio and $1970\dot{A}/min$ at 30 % additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etched profile of PZT films was obtained above 70 by SEM. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT phase revealed by x-ray diffraction (XRD). From XPS analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of TixOy is recovered by $O_2$ recombination during rapid thermal annealing process. From AFM images, it shows that the surface roughness of re-annealed sample after etching is improved.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.375-378
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• 1998

Platinum thin film which hardly form volatile compounds with any reactive gas at normal process temperature was etched in inductive coupled BCl$_{3}$/Cl$_{2}$ plasma. The etch rate of platinum thin film increased with increasing Cl$_{2}$/(Cl$_{2}$ + BCl$_{3}$) ratio. That reasoned increasing of ion current density.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1432-1433
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• 2007

반도체 제조공정에서 널리 쓰이고 있는 플라즈마 에칭프로세스는 기판의 물질을 선택적으로 제거할 때 사용하는 방법이다. 컴퓨터 시뮬레이션을 이용하여 플라즈마 에칭공정을 예측하기 위한 많은 노력이 행하여져 왔다. 그러나 많은 연구에서 플라즈마와 쉬스영역을 따로 모델링하거나 PIC-MC 방법을 이용하였다. 본 논문에서는 반도체 에칭 공정에 사용되는 플라즈마와 플라즈마 쉬스를 상용 코드인 Multiphysics를 사용하여 동시에 시뮬레이션하고 실험결과와의 일치성을 보이고자 한다.

• Journal of Institute of Control, Robotics and Systems
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• v.21 no.9
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• pp.875-880
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• 2015

Traditional semiconductor process control has been performed through statistical process control techniques in a constant process-recipe conditions. However, the complexity of the interior of the etching apparatus plasma physics, quantitative modeling of process conditions due to the many difficult features constraints apply simple SISO control scheme. The introduction of the Advanced Process Control (APC) as a way to overcome the limits has been using the APC process control methodology run-to-run, wafer-to-wafer, or the yield of the semiconductor manufacturing process to the real-time process control, performance, it is possible to improve production. In addition, it is possible to establish a hierarchical structure of the process control made by the process control unit and associated algorithms and etching apparatus, the process unit, the overall process. In this study, the research focused on the methodology and monitoring improvements in performance needed to consider the process management of future developments in the semiconductor manufacturing process in accordance with the age of the APC analysis in real applications of the semiconductor manufacturing process and process fault diagnosis and control techniques in progress.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.570-575
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• 2002

$SrBi_2Ta_2O_9$ thin films were etched in $Cl_2/CF_4/Ar$ inductively coupled plasma (ICP). The maximum etch rate was 1300 ${\AA}/min$ at 900 W ICP power in Cl$_2$(20%)/$CF_4$(20%)/Ar(60%). As RF source power increased, radicals (F, Cl) and ion ($Ar^+$) increased. The influence of plasma induced damage during etching process was investigated in terms of P-E hysteresis loops, chemical states on the surface, surface morphology and phase of X-ray diffraction. The chemical states on the etched surface were investigated with X-ray spectroscopy and secondary ion mass spectrometry. After annealing $700^{\circ}C$ for 1 h in $O_2$ atmosphere, the decreased P-E hysteresises of the etched SBT thin films in Ar and $Cl_2/CF_4/Ar$ plasma were recovered.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.6
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• pp.460-464
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• 2003

The barium strontium titannate ((Ba,Sr)TiO$_3$:BST) thin films were etched in an inductively coupled plasma (ICP) as a function of CF$_4$/Ar gas mixing ratio. Under CF$_4$(20%)/Ar(80%), the maximum etch rate of the BST films was 400 $\AA$/min. Etching products were redeposited on the surface of BST and then the nature of crystallinity were varied. Therefore, we investigated the etched surface of BST by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The plasma damages were evaluated in terms of leakage current density by Agilent 4145C and dielectric constant by HP 4192 impedance analyzer. After the BST thin films exposed in the plasma, the leakage current density and roughness increases. After annealing at 600 $^{\circ}C$ for 10 min in $O_2$ ambient, the leakage current density, roughness and nonvolatile etch byproducts reduced. From this results, the plasma induced damages were recovered by annealing process owing to the relaxation of lattice mismatches by Ar ions and the desorption of metal fluorides in high temperature.

• Journal of the Korean Ceramic Society
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• v.50 no.5
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• pp.348-352
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• 2013

The evaluation of plasma resistance and the characteristics of yttria ceramics fabricated by calcination yttria as a starting material without dopants under an oxidation atmosphere was investigated. Regardless of the starting materials, as-received, and calcined yttria powder, XRD patterns showed that all samples have $Y_2O_3$ phase. The three cycling process inhibited a large grain, which occurs frequently during the yttria sintering, and a high density ceramic with a homogeneous grain size was obtained. The grain size of the sintered ceramic was affected by the starting powders. The smaller the grain size, the larger were the Young's modulus and KIC. Compared to $Al_2O_3$ and $ZrO_2$ ceramics, yttria ceramics showed a 3 times larger plasma resistance and a 1.4~2.2 times lower weight loss during the plasma etching test, respectively.

• Journal of the Korean institute of surface engineering
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• v.37 no.1
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• pp.5-12
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• 2004

The enhancement of adhesion for Cu film on polycarbonate (PC) surface with the $Ar/O_2$ gas plasma treatment and dc-bias sputtering was studied. The plasma treatment with this reactive mixture changes the chemical property of PC surface into hydrophllic one, which is shown by the variation of contact angle with surface modification. The micro surface roughness that also gives the high adhesive environment is increased by the $Ar/O_2$ gas plasma treatment. These results were observed distinctly from the atomic force microscopy (AFM). The negative substrate dc-bias effect for the Cu adhesion on PC was also investifated. Accelerated $Ar^{+}$ lons in sheath area of anode bombard the bare surface of PC during initial stage of dc bias sputtering. PC substrate. therefore, has severe roughen and hydrophilic surface due to the physical etching process with more activated functional group. As dc-bias sputtering process proceeds, morphology of Cu film shows better step coverage and dense layer. The results of peel test show the evidence of superiority of bias sputtering for the adhesion between metal Cu and PC.C.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.171-174
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• 2002

The barium strontium titannate (BST) thin films were etched in $CF_{4}/Ar$ inductively coupled plasma (ICP). The high etch rate obtained at a $CF_{4}(20%)/Ar(80%)$ and the etch rate in pure argon was twice higher than that in pure $CF_{4}$. This indicated that BST etching is sputter dominant process. It is impossible to avoid plasma-induced damages by the energetic particles in the plasma and the nonvolatile etch products. The plasma damages were evaluated in terms of leakage current density, residues on the etched sample, and the changes of roughness. After the BST thin films exposed in the plasma, the leakage current density and roughness increases. In addition, there are appeared a nonvolatile etch byproductsand from the result of X-ray photoelectron spectroscopy (XPS). After annealing at ${600^{\circ}C}$ for 10 min in $O_{2}$ ambient, the increased leakage current density, roughness and nonvolatile etch byproducts reduced. From the this results, the plasma induced damage recovered by annealing process owing to the relaxation of lattice mismatches by Ar ions and the desorption of metal fluorides in high temperature.