• Title/Summary/Keyword: Plasma etching process

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Effect of Oxygen for Diamond Film Synthesis with C-Hexane in Microwave Plasma Enhanced CVD Process

  • Han, Sang-Bo
    • Journal of Electrical Engineering and Technology
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    • v.7 no.6
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    • pp.983-989
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    • 2012
  • The purpose of this paper is to decide the optimum synthesis conditions of polycrystalline diamond films according to the ratio of gas mixture. Diamond films were deposited with cyclo-hexane as a carbon precursor by the microwave plasma enhanced chemical vapor deposition process. The optimum oxygen ratio to cyclo-hexane was reached about 125 % under the fixed 0.3% c-hexane in hydrogen. Oxygen plays a role in etching the graphitic components of carbon sp2 bond effectively. By OES measurement, the best synthesis conditions found out about 12.5 % and 15.75 %, which is the emission intensity ratios of CH(B-X) and $H{\beta}$ on $H{\alpha}$, respectively. Also, the electron temperature was similar about 5,000 to 5,200 K in this work.

The Tribological Behaviors of Mesoporous $SiO_2$ Thin Film Formed by Sol-Gel and Self-Assembly Method (졸겔법과 자가조립법을 통해 제조된 메조포러스 $SiO_2$ 박막의 트라이볼로지 특성)

  • Lee, Young-Ze;Shin, Yun-Ha;Kim, Ji-Hoon;Kim, Ji-Man;Kim, Tae-Sung
    • Tribology and Lubricants
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    • v.23 no.6
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    • pp.298-300
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    • 2007
  • Frictional characteristics of mesoporous $SiO_2$ thin films were evaluated with different pore sizes. The films were manufactured by sol-gel and self-assembly methods to have a porous structure. The pores on the surface may play as the outlet of wear particle and the storage of lubricant so that the surface interactions could be improved. The pores were exposed on the surface by chemical mechanical polishing (CMP) or plasma-etching after forming the porous films. The ball-on-disk tests with mesoporous $SiO_2$ thin films on glass specimen were conducted at sliding speed of 15 rpm and a load of 0.26 N. The results show considerable dependency of friction on pore size of mesoporous $SiO_2$ thin films. The friction coefficient decreased as increasing the pore size. CMP process was very useful to expose the pores on the surface.

Fabrication of Micro Pattern on Flexible Substrate by Nano Ink using Superhydrophobic Effect (초발수 현상을 이용한 나노 잉크 미세배선 제조)

  • Son, Soo-Jung;Cho, Young-Sang;Rha, Jong Joo;Cho, Chul-Jin
    • Journal of Powder Materials
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    • v.20 no.2
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    • pp.120-124
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    • 2013
  • This study is carried out to develop the new process for the fabrication of ultra-fine electrodes on the flexible substrates using superhydrophobic effect. A facile method was developed to form the ultra-fine trenches on the flexible substrates treated by plasma etching and to print the fine metal electrodes using conductive nano-ink. Various plasma etching conditions were investigated for the hydrophobic surface treatment of flexible polyimide (PI) films. The micro-trench on the hydrophobic PI film fabricated under optimized conditions was obtained by mechanical scratching, which gave the hydrophilic property only to the trench area. Finally, the patterning by selective deposition of ink materials was performed using the conductive silver nano-ink. The interface between the conductive nanoparticles and the flexible substrates were characterized by scanning electron microscope. The increase of the sintering temperature and metal concentration of ink caused the reduction of electrical resistance. The sintering temperature lower than $200^{\circ}C$ resulted in good interfacial bonding between Ag electrode and PI film substrate.

Reactive ion etching of InP using $BCl_3/O_2/Ar$ inductively coupled plasma ($BCl_3/O_2/Ar$ 유도결합 플라즈마를 이용한 InP의 건식 식각에 관한 연구)

  • 이병택;박철희;김성대;김호성
    • Journal of the Korean Vacuum Society
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    • v.8 no.4B
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    • pp.541-547
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    • 1999
  • Reactive ion etching process for InP using BCl3/O2/Ar high density inductively coupled plasma was investigated. The experimental design method proposed by the Taguchi was utilized to cover the whole parameter range while maintaining reasonable number of actual experiments. Results showed that the ICP power and the chamber pressure were the two dominant parameters affectsing etch results. It was also observed that the etch rate decreased and the surface roughness improved as the ICP power and the bias voltage increased and as the chamber pressure decreased. The Addition of oxygen to the gas mixture drastically improved surface roughness by suppressing the formation of the surface reaction product. The optimum condition was ICP power 600W, bias voltage -100V, 10% $O_2$, 6mTorr, and $180^{\circ}C$, resulting in about 0.15$\mu\textrm{m}$ etch rate with smooth surfaces and vertical mesa sidewalls Also, the maximum etch rate of abut 4.5 $\mu\textrm{m}$/min was obtained at the condition of ICP power 800W, bias voltage -150V, 15% $O_2$, 8mTorr and $160^{\circ}C$.

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Fabrication of All-Nb Josephson Junction Array Using the Self-Aligning and Reactive ion Etching Technique (Self-Aligning 기술과 반응성 이온 식각 기술로 제작된 Nb 조셉슨 접합 어레이의 특성)

  • Hong, Hyun-Kwon;Kim, Kyu-Tea;Park, Se-Il;Lee, Kie-Young
    • Progress in Superconductivity
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    • v.3 no.1
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    • pp.49-55
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    • 2001
  • Josephson junction arrays were fabricated by DC magnetron sputtering, self-aligning and reactive ion etching technique. The Al native oxide, formed by thermal oxidation, was used as the tunneling barrier of Nb/$Al-A1_2$$O_3$Nb trilayer. The arrays have 2,000 Josephson junctions with the area of $14\mu\textrm{m}$ $\times$ $46\mu\textrm{m}$. The gap voltages were in the range of 2.5 ~2.6 mV and the spread of critical current was $\pm$11~14%. When operated at 70~94 ㎓, the arrays generated zero-crossing steps up to 2.1~2.4 V. To improve transmission of microwave power and prevent diffusion of oxygen into Nb ground-plane while depositing $SiO_2$dielectric, we applied a plasma nitridation process to the Nb ground-plane. The microwave power was well propagated in Josephson junction arrays with nitridation. The difference in microwave transmission 7an be interpreted by the surface impedance change depending on nitridation.

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Fabrication and Evaluation of the Flexible and Implantable Micro Electrode (생체 삽입형 유연한 마이크로 전극의 제작 및 평가)

  • Baek Ju-Yeoul;Kwon Gu-Han;Lee Sang-Woon;Lee Ky-Am;Lee Sang-Hoon
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.2
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    • pp.93-99
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    • 2006
  • In this paper, we fabricated and evaluated polydimethylsiloxane(PDMS)-based flexible and implantable micro electrodes. The electrode patterning was carried out with the photolithography and chemical etching process after e-beam evaporation of 100 ATi and 1000 A Au. The PDMS substrate was treated by oxygen plasma using reactive ion etching(RIE) system to improve the adhesiveness of PDMS and metal layers. The minimum line width of fabricated micro electrode was 20 $\mu$m. After finished patterning, we did packaging with PDMS and then brought up the electrode's part about 40 $\mu$m with gold electroplating. The Hank's balanced salt solution(HBSS) test was carried out for 6 month for endurance of fabricated micro electrode. We carried out in-vivo test for the evaluation of biocompatibility by implanting electrodes under the ICR mouse skin for 42 days.

High Durable Anti-Reflective Polymer with Silica Nanoparticle Array Fabricated by RF Magnetron Sputter (RF sputter를 이용한 실리카 증착 고 내구성 반사 방지막 제조)

  • Jeon, Seong-Gwon;Jeong, Eun-Uk;Rha, Jong-Joo;Kwon, Jung-Dae
    • Journal of Surface Science and Engineering
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    • v.52 no.2
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    • pp.84-89
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    • 2019
  • We fabricated durable anti-reflective(AR) layer with silica globular coating on polymer by two steps. Firstly, nano-protrusions of polymer were formed by plasma etching known as R.I.E(reactive ion etching) process. Secondly, silica globular coating was deposited on polymer nano-protrusions for mechanically protective and optically enhancing AR layers by RF magnetron sputter. And then durable antireflective polymers were synthesized adjusting plasma power and time, working pressures of RIE and RF sputtering processes. Consequently, we acquired the average transmission (94.10%) in the visible spectral range 400-800 nm and the durability of AR layer was verified to sustain its transmission until 5,000 numbers by rubber test at a load of 500 gf.

Laser-Direct Patterning for Plasma Display Panel (플라즈마 디스플레이 패널을 위한 레이저 직접 패터닝)

  • Ahn, Min-Young;Lee, Kyoung-Cheol;Lee, Hong-Kyu;Lee, Cheon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.99-102
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    • 1999
  • A mixture which was made from organic gel, glass powder and ceramic powder was masklessly etched for fabrication of barrier rib of PDP(Plasma Display Panel) by focused Ar$^{+}$ laser( λ =514 nm) and Nd:YAG(λ =532, 266 nm) laser irradiation at the atmosphere. The depth of the etched grooves increases with increasing a laser fluence and decreasing a scan speed. Using second harmonic of Nd:YAG laser, the threshold laser fluence was 6.5 mJ/$\textrm{cm}^2$ for the sample of PDP barrier rib softened at 12$0^{\circ}C$. The thickness of 130 ${\mu}{\textrm}{m}$ of the sample on the glass was clearly removed without any damage on the glass substrate by fluence of 19.5 J/$\textrm{cm}^2$....

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Double-Side Notched Long-Period Fiber Gratings fabricated by Using an Inductively Coupled Plasma for Force Sensing

  • Fang, Yu-Lin;Huang, Tzu-Hsuan;Chiang, Chia-Chin;Wu, Chao-Wei
    • Journal of the Korean Physical Society
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    • v.73 no.9
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    • pp.1399-1404
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    • 2018
  • This study used an inductively coupled plasma (ICP) dry etching process with a metal amplitude mask to fabricate a double-side notched long-period fiber grating (DNLPFG) for loading sensing. The DNLPFG exhibited increasing resonance attenuation loss for a particular wavelength when subjected to loading. When the DNLPFG was subjected to force loading, the transmission spectra were changed, showing a with wavelength shift and resonance attenuation loss. The experimental results showed that the resonant dip of the DNLPFG increased with increasing loading. The maximum resonant dip of the $40-{\mu}m$ DNLPFG sensor was -26.522 dB under 0.049-N loading, and the largest force sensitivity was -436.664 dB/N. The results demonstrate that the proposed DNLPFG has potential for force sensing applications.

Characterization of microcrystalline silicon thin films prepared by layer-by-layer technique with a OECVD system

  • Kim, C.O.;Nahm, T.U.;Hong, J.P.
    • Journal of Korean Vacuum Science & Technology
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    • v.3 no.2
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    • pp.116-120
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    • 1999
  • Possible role of hydrogen atoms on the formation of microcrystalline silicon films was schematically investigated using a plasma enhanced chemical vapor deposition system. A layer-by-layer technique that can alternate deposition of ${\alpha}$-Si thin film and then exposure of H2 plasma was used for this end. The experimental process was extensively carried out under different hydrogen plasma times (t2) at a fixed number of 20 cycles in the deposition. structural properties, such as crystalline volume fractions and grain shapes were analyzed by using a Raman spectroscopy and a scanning electron microscopy. Electrical transports were characterized by the temperature dependence of the dark conductivity that gives rise to the calculation of activation energy (Ea). Optical absorption was measured using an ultra violet spectrophotometer, resulting in the optical energy gap (Eopt). Our experimental results indicate that both of the hydrogen etching and the structural relaxation effects on the film surface seem to be responsible for the growth mechanism of the crystallites in the ${\mu}$c-si films.

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