• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.319-324
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• 2002

In this study, the reduce of plasma etching damage in PZT thin film with addictive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of $Cl_2/CF_4$ with addition of Ar and $O_2$ with inductively coupled plasma. The etch rates of PZT thin films were 1450 ${\AA}/min$ at 30% additive Ar and 1100 ${\AA}/min$ at 10% auditive $O_2$ into $Cl_2/CF_4$ gas mixing ratio of 8/2. In order to reduce plasma damage of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures at $O_2$ atmosphere. From the hysteresis curries, the ferroelectric properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed PZT films is consistent wish the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x ray photoelectron spectroscopy (XPS) analysis, the intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of $Ti_xO_y$ is recovered by $O_2$ recombination during rapid thermal annealing process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.9
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• pp.681-685
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• 2012

We investigated the dry etching characteristics of TiN in $TiN/Al_2O_3$ gate stack using a inductively coupled plasma system. TiN thin film is etched by BCl3/He plasma. The etching parameters are the gas mixing ratio, the RF power, the DC-bias voltages and process pressures. The highest etch rate is in $BCl_3/He$ (25%:75%) plasma. The selectivity of TiN thin film to $Al_2O_3$ is pretty similar with $BCl_3/He$ plasma. The chemical reactions of the etched TiN thin films are investigated by X-ray photoelectron spectroscopy. The intensities of the Ti 2p and the N 1s peaks are modified by $BCl_3$ plasma. Intensity and binding energy of Ti and N could be changed due to a chemical reaction on the surface of TiN thin films. Also we investigated that the non-volatile byproducts such as $TiCl_x$ formed by chemical reaction with Cl radicals on the surface of TiN thin films.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.2
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• pp.128-131
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• 2004

In this study Bosch etching process repeating etch and deposition by STS-ICP ASEHR was evaluated. Fundamentally etch depth changes were affected by thickness of deposited PR, $SiO_2$ and depth, and pattern size on the substrate. However etch rates were observed to be changed by variable parameters such as platen power, coil power, and process pressure. Etch rate showed $1.2\mu{m}/min$ and sidewall profile showed $90\pm0.2^\circ$ with platen power 12W, coil power 500W, and etch/passivation cycle 6/7sec. It was confirmed that this result was very typical to Bosch process utilizing ICP.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.385-385
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• 2010

In this work, we have investigated the etching characteristics of $TiO_2$ and selectivity of $TiO_2$ over $SiO_2$ thin films as resistance in ReRAM using the inductively coupled plasma. The etch rate and selectivity were measured by varying the $BCl_3$ addition into Ar plasma. The maximum etchrate was obtained at 110.1nm/min at $BCl_3$/Ar=5sccm/10sccm, 500W for RFpower, -100v for DC-bias voltage, and 2Pa for the process pressure. The etched $TiO_2$ surface was investigated with X-ray photo electron spectroscopy. We explained the etching mechanism in two etch mechanisms, physiclas puttering and chemical reaction.

• Transactions on Electrical and Electronic Materials
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• v.6 no.3
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• pp.87-90
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• 2005

$SiO_2$ via-hole etching with a high aspect ratio is a key process in fabricating ULSI devices; however, accumulated charge during plasma etching can cause etching stop, micro-loading effects, and charge build-up damage. To alleviate this concern, charge-up damage sensor was fabricated for the ultimate goal of real-time monitoring of accumulated charge. As an effort to reach the ultimate goal, fabricated sensor was used for electrical potential measurements of via holes between two poly-Si electrodes and roughly characterized under various plasma conditions using statistical design of experiment (DOE). The successful identification of potential difference under various plasma conditions not only supports the evidence of potential charge-up damage, but also leads the direction of future study.

• 제어로봇시스템학회:학술대회논문집
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• 1995.10a
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• pp.252-258
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• 1995

The purpose of this study is to provide the integrated process control system, utilizing neural network modeling, to search for the appropriate choice input, and to keep the process output within the desired rang in the real etch process.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.391-392
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• 2012

In these days, the desire for the precise and tiny displays in mobile application has been increased strongly. Currently, laser displays ranging from large-size laser TV to mobile projectors, are commercially available or due to appear on the market [1]. In order to achieve a mobile projectors, the semiconductor laser diodes should be used as a laser source due to their size and weight. In this presentation, the continuous etch characteristics of Pd and AlGaN/GaN superlattice for the fabrication of blue laser diodes were investigated by using inductively coupled $CHF_3$ and $Cl_2$ -based plasma. The GaN laser diode samples were grown on the sapphire (0001) substrate using a metal organic chemical vapor deposition system. A Si-doped GaN layer was grown on the substrate, followed by growth of LD structures, including the active layers of InGaN/GaN quantum well and barriers layer, as shown in other literature [2], and the palladium was used as a p-type ohmic contact metal. The etch rate of AlGaN/GaN superlattice (2.5/2.5 nm for 100 periods) and n-GaN by using $Cl_2$ (90%)/Ar (10%) and $Cl_2$ (50%)/$CHF_3$ (50%) plasma chemistry, respectively. While when the $Cl_2$/Ar plasma were used, the etch rate of AlGaN/GaN superlattice shows a similar etch rate as that of n-GaN, the $Cl_2/CHF_3$ plasma shows decreased etch rate, compared with that of $Cl_2$/Ar plasma, especially for AlGaN/GaN superlattice. Furthermore, it was also found that the Pd which is deposited on top of the superlattice couldn't be etched with $Cl_2$/Ar plasma. It was indicating that the etching step should be separated into 2 steps for the Pd etching and the superlattice etching, respectively. The etched surface of stacked Pd/superlattice as a result of 2-step etching process including Pd etching ($Cl_2/CHF_3$) and SLs ($Cl_2$/Ar) etching, respectively. EDX results shows that the etched surface is a GaN waveguide free from the Al, indicating the SLs were fully removed by etching. Furthermore, the optical and electrical properties will be also investigated in this presentation. In summary, Pd/AlGaN/GaN SLs were successfully etched exploiting noble 2-step etching processes.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.31 no.1 s.256
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• pp.50-54
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• 2007

Nickel nano and microstructures are fabricated with simple process. The fabrication process consists of nickel deposition, lithography, nickel ion etching and plasma ashing. Well-aligned nickel nanowalls and nickel self-encapsulated microchannels were fabricated. We found that the ion etching condition as a key fabrication process of nickel nanowalls and self-encapsulated microchannels, i.e., 40 sccm Ar flow, 550 W RF power, 15 mTorr working pressure, and $20^{\circ}C$ water cooled platen without using He backside cooling unit and with using it, respectively. We present the experimental results and discuss the formational conditions and the effect of nickel redeposition on the fabrication of nickel nano and microstructures.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.131-135
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• 2023

Neural network-based time series models called time series neural networks (TSNNs) are trained by the error backpropagation algorithm and used to predict process shifts of parameters such as gas flow, RF power, and chamber pressure in reactive ion etching (RIE). The training data consists of process conditions, as well as principal components (PCs) of optical emission spectroscopy (OES) data collected in-situ. Data are generated during the etching of benzocyclobutene (BCB) in a SF₆/O₂ plasma. Combinations of baseline and faulty responses for each process parameter are simulated, and a moving average of TSNN predictions successfully identifies process shifts in the recipe parameters for various degrees of faults.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.65-65
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• 1999

Dry etching technique provides more easy controllability on the etch profile such as anisotropic etching than wet etching process and the results of lots of researches on the characterization of various plasmas or ion beams for semiconductor etching have been reported. Chlorine-based plasmas or chlorine ion beam have been often used to etch several semiconductor materials, in particular Si-based materials. We have studied the effect of He flow rate on the Si and SiO2 dry etching using chlorine-based plasma. Experiments were performed using reactive ion etching system. RF power was 300W. Cl2 gas flow rate was fixed at 58.6 sccm, and the He flow rate was varied from 0 to 120 sccm. Fig. 1 presents the etch depth of si layer versus the etching time at various He flow rate. In case of low He flow rate, the etch rate was measured to be negligible for both Si and SiO2. As the He flow increases over 30% of the total inlet gas flow, the plasma state becomes stable and the etch rate starts to increase. In high Ge flow rate (over 60%), the relation between the etch depth and the time was observed to be nearly linear. Fig. 2 presents the variation of the etch rate depending on the He flow rate. The etch rate increases linearly with He flow rate. The results of this preliminary study show that Cl2/He mixture plasma is good candidate for the controllable si dry etching.