• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.98-100
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• 2004

In this study, PST thin films were etched with inductively coupled $Cl_2/(Cl_2+Ar)$ plasmas. The etch characteristics of PST thin films as a function of $Cl_2/(Cl_2+Ar)$ gasmixtures were analyzed by using quadrupole mass spectrometer (QMS). Systematic studies were carried out as a function of the etching parameters, including the RF power and the working pressure. The maximum PST film etch rate is 56.2 nm/min, because a small addition of $Cl_2$ to the $Cl_2$/Ar mixture increased the chemical effect. It was proposed that sputter etching is the dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.5
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• pp.265-269
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• 2000

$(Ba, Sr)TiO_3$thin films were etched with a magnetically enhanced inductively coupled plasma (MEICP) at different CF4/Ar gas mixing ratios. Experimental was done by varying the etching parameters such as rf power, dc bias and chamber pressure. The maximum etch rate of the BST films was $1800{AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X-ray photoelectron spectroscopy (XPS) results show that surface reaction between Ba, Sr, Ti and C, F radicals occurs during the (Ba, Sr)TiO3 etching. To analyze the composition of surface residue after the etching, films etched with different CF_4/Ar$ gas mixing ratio were investigated using XPS and secondary ion mass spectroscopy (SIMS).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.62-65
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• 2001

$SrBi_2Ta_2O_{9}$ thin films were etched in inductively coupled $Cl_{2}$/$CF_{4}$/Ar plasma. The maximum etch rate was 1060 $\AA\textrm{m}$/min in $Cl_{2}$/$CF_{4}$/Ar (80). The chemical reactions on the etched surface were studied with x-ray photoelectron spectroscopy. The etching of SBT thin films in $Cl_{2}$/$CF_{4}$/Ar were etched by chemically assisted reactive ion etching. The small addition of $Cl_2$ into $CF_4$(20)/Ar(80) plasma will decrease the fluorine radicals and the increase Cl radical.

• Journal of the Korean Ceramic Society
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• v.31 no.6
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• pp.601-608
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• 1994

Aluminum oxide thin films were deposited on p-type(100) silicon substrates by electron cyclotron resonance plasma enhanced CVD(ECR-PECVD) using TMA[Al(CH3)3] and oxygen as reactant gases at 16$0^{\circ}C$ or lower temperatures. The aluminum oxide films deposited by ECR-PECVD have the amorphous structure with the refractive index of 1.62~1.64 and the O/Al ratio of 1.6~1.7. Oxygen flow rate necessary for the stable deposition of the aluminum oxide films increases as the deposition temperature increases. It was found from the OES analysis that the ECR plasma had les cooling effect by introducing the TMA reactant gas in comparison with the RF plasma. The properties of aluminum oxide films prepared by ECR-PECVD were compared with those prepared by RF-PECVD. The ECR-PECVD aluminum oxide films have the higher refractive indices, the lower contents of impurities (H and C) and the stronger wet etch resistance than those deposited by RF-PECVD.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1011-1015
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• 2002

In this study, Au thin films were etched with a Cl$_2$/Ar gas combination in an inductively coupled plasma. The highest etch rate of the Au thin film was 3500 A/min at a Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is Au-Cl bonding by chemical reaction between Cl and Au. During the etching of Au thin films in Cl$_2$/Ar plasma, Au-Cl bond is formed, and these products can be removed by the physical bombardment of Ar ions[l].

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1400-1402
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• 1994

Plasma polymerized thin films was prepared using an interelectrod inductively coupled gas-flow-type reactor. Styrene was chosen as the monomer to be used. This thin films were also delineated by the electron-beam apparatus with an acceleration voltage 30kV, and the pattern in the resist was developed with RIE 80 with argon gas mixture ratio, pressure and RF power. The molecular structure of thin films was investigated by GPC and FT-IR and then was discussed in relation to its quality as a resist. In the case of plasma polymerization, thickness of resist could be controlled by discharge duration and power. Also etch rate is increased as to growing pressure with RIE 80.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.51-55
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• 2011

We investigated the etching characteristics of zinc oxide (ZnO) thin films deposited by the atomic layer deposition method. The gases of the inductively coupled plasma chemistry consisted of $Cl_2$, Ar, and $O_2$. The maximum etch rate was 40.3 nm/min at a gas flow ratio of $Cl_2$/Ar=15:5 sccm, radio-frequency power of 600 W, bias power of 200 W, and process pressure of 2 Pa. We also investigated the plasma induced damage in the etched ZnO thin films using X-ray diffraction (XRD), atomic force microscopy and photoluminescence (PL). A highly oriented (100) peak was present in the XRD spectroscopy of the ZnO samples. The full width at half maximum value of the ZnO sample etched using the $O_2/Cl_2$/Ar chemistry was higher than that of the as-deposited sample. The roughness of the ZnO thin films increased from 1.91 nm to 2.45 nm after etching in the $O_2/Cl_2$/Ar plasma chemistry. Also, we obtained a strong band edge emission at 380 nm. The intensities of the peaks in the PL spectra from the samples etched in all of the chemistries were increased. However, there was no deep level emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.84-87
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• 2001

In this study, $CeO_2$ thin films were etched with a $CF_4/Ar$ gas combination in inductively coupled plasma (ICP), The maximum etch rate of $CeO_2$ thin films is $270{\AA}/min$under $CF_4/(CF_4+Ar)$ of 0.2, 600 W/-200 V, 15 mTorr, and $25^{\circ}C$. The selectivities of $CeO_2$ to PR and SBT are 0.21, 0.25. respectively. The surface reaction of the etched $CeO_2$ thin films was investigated with x-ray photoelectron spectroscopy (XPS). There is a chemical reaction between Ce and F, Compounds such as $Ce-F_x$ are remains on the surface of $CeO_2$ thin films. Those products can be removed by Ar ion bombardment effect, The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. Scanning electron microscopy (SEM) was used to examine etched profiles of $Ce-F_x$ thin films. The etch profile of over-etched $CeO_2$ films with the $0.5 {\mu}m$ line was approximately $65^{\circ}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.93-98
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• 2001

YMnO$_3$ films are excellent gate dielectric materials of ferroelectric random access memories (FRAMs) with MFSFET (metal -ferroelectric-semiconductor field effect transistor) structure because YMnO$_3$ films can be deposited directly on Si substrate and have a relatively low permittivity. Although the patterning of YMnO$_3$ thin films is the requisite for the fabrication of FRAMs, the etch mechanism of YMnO$_3$ thin films has not been reported. In this study, YMnO$_3$thin films were etched with Cl$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$ film is 285$\AA$/min under Cl$_2$/(Cl$_2$+Ar) of 1.0, RF power of 600 W, dc-bias voltage of -200V, chamber pressure of 15 mTorr and substrate temperature of $25^{\circ}C$. The selectivities of YMnO$_3$ over CeO$_2$ and $Y_2$O$_3$ are 2.85, 1.72, respectively. The selectivities of YMnO$_3$ over PR and Pt are quite low. Chemical reaction in surface of the etched YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS) surface of the selected YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry (SIMS). The etch profile was also investigated by scaning electron microscopy(SEM)

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.375-378
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• 1998

Platinum thin film which hardly form volatile compounds with any reactive gas at normal process temperature was etched in inductive coupled BCl$_{3}$/Cl$_{2}$ plasma. The etch rate of platinum thin film increased with increasing Cl$_{2}$/(Cl$_{2}$ + BCl$_{3}$) ratio. That reasoned increasing of ion current density.