• Title/Summary/Keyword: Plasma distribution

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Fabrication of Ion Mass Analyzer and its Operational Characteristics (이온질량분석기의 제작과 그 동작특성)

  • Kim, Guang-Hoon;Choi, Young-Wook;Lee, Hong-Sik;Rim, Geun-Hie;Nikiforov, S.A.
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.50 no.8
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    • pp.401-408
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    • 2001
  • The information of the ion composition in plasma applications is required to characterize a plasma. A better understanding of ion species composition ratio and its spacial distribution, etc. is thus necessary in plasma-related processes, such as thin film deposition, plasma-based ion implantation, semiconductor processing, and so on. In this research, a compact ion mass analyzer that is based on magnetic sector analyzer was developed and its operational characteristics were studied in nitrogen plasma.

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Numerical Modeling of Deposition Uniformity in ICP-CVD System (수치모델을 이용한 ICP-CVD 장치의 증착 균일도 해석)

  • Joo, Jung-Hoon
    • Journal of the Korean institute of surface engineering
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    • v.41 no.6
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    • pp.279-286
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    • 2008
  • Numerical analysis is done to investigate which would be the most influencing process parameter in determining the uniformity of deposition thickness in TiN ICP-CVD(inductively coupled plasma chemical vapor deposition). Two configurations of ICP antenna are modeled; side and top planar. Side and top gas inlets are considered with each ICP antenna geometries. Precursor for TiN deposition was TDMAT(Tetrakis Diethyl Methyl Amido Titanium). Two step volume dissociation of TDMAT is used and absorption, desorption and deposition surface reactions are included. Most influencing factors are H and N concentration dissociated by electron impact collisions in plasma volume which depends on the relative positions of gas inlet and ICP antenna generated hot plasma region. Low surface recombination of N shows hollow type concentration, but H gives a bell type distribution. Film thickness at substrate edges is sensitive to gas flow rate and at high pressures getting more dependent on flow characteristics.

Plasma cell Granuloma: one case report (혈장세포 육아종[보고 1예])

  • Kwack, Yeong-Tae;Park, Ju-Cheol;Yoo, Seh-Young
    • Journal of Chest Surgery
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    • v.14 no.3
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    • pp.225-227
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    • 1981
  • A 31-year-old female visited O.P.D. of internal medicine, Kyung Hee Medical center, with the chief complaint of generalized weakness and headache. She took a routine chest P-A and there was a 6.5 x 7.5 cm sized round mass in the right middle lung field. She admitted to the Dept. of Thoracic and Cardiovascular Surgery under the impression of malignant bronchogenic carcinoma with the remit of bronchoscopy and sputum cytology and tomogram. Middle and lower lobectomy of right lung was performed and postoperative surgical biopsy revealed out the plasma cell granuloma. The plasma cell granuloma may occur as a solitary nodule in the lung or be associated with systemic disease, plasma protein imbalance, or nonspecific local inflammatory reaction . More than two third of the reported patients were less than 30 year of age. Grossly the lesion appears reddish-brown and microscopic features include pallisade or a cartwheel distribution of plasma cells with Russel bodies and amyloid. Local excision or lobectomy has been curative in most cases.

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Formation of the functional plasma ploymerized thin films by a new type reactor (새로운 반응장치를 이용한 기능성 플라즈마 중합막의 제작)

  • 김종택;이상희;박종관;박구범;이덕출
    • Journal of the Korean Vacuum Society
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    • v.7 no.1
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    • pp.72-76
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    • 1998
  • A new gas-flow type reactor for plasma polymerization was developed to synthesize functional polymers, which enhances reaction of radicals activated in the discharge. Styrene was used for the plasma polymerization and molecular strucure and molecular weight distribution of the plasma -polymerized styrene were studies. The ploymer was evaluated to be an efficient electron beam resist. The sensitivity of the plasma-polymerized styrene film formed by this new reactor was better than that of the reported values of conventional polystyrene, Fine resist patterns could be successfully developed by a wet process.

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AC Plasma Power Supply with Variable Voltage and Variable Frequency (가변전압 가변주파수(VVVF) 교류 플라즈마 전원장치)

  • Shin Wan-Ho;Yun Kee-Pok;Jeoung Hwan-Myoung;Choi Jae-Ho
    • Proceedings of the KIEE Conference
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    • summer
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    • pp.1205-1207
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    • 2004
  • AC plasma power supply is used to control a ozone generator and a air pollution gas. AC plasma power supply is composed of power semiconductor switch devices and control board adapted SHE(Selected Harmonic Elimination) PWM method. AC plasma power supply with sinusoidal VVVF(variable voltage and variable frequency) is realized. Its output voltage range is from 0 [V] to 20[kV] and output frequency range is from 8[kHz] to 20[kHz]. Using proposed system, AC high voltage and high frequency discharge is tested in the DBD(dieletric barrier discharge) reactor, and the space distribution of a its non-thermal plasma is observed. In spite of the increasement of voltage and frequency, the proposed system have a stable operation characteristics. It is verified by the experimental results.

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COMPARISON OF PLASMA-INDUCED SURFACE DAMAGES IN VARIOUS PLASMA SOURCES

  • Yi, Dong-Hyen;Lee, Jun-Sik;Kim, Sang-Kyun;Kim, Jae-Jeong
    • Journal of the Korean institute of surface engineering
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    • v.29 no.5
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    • pp.338-344
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    • 1996
  • This study was an investigation of plasma-induced damages on silicon substrate in the semiconductor manufacturing technology. The plasma-induced damage level on silicon substrate was analyzed and compared in various plasma etching systems. The analysis methods were therma wave, life-time recovery, SCA (Surface Charge Analyzer) and TRXF (Total Reflection X-ray Fluorescence) measurements, and the measured values were compared for each systems. In the comparison of the values which were obtained by a system that had low life-time recovery, there was not any differences in DC parameters. However, the reflesh time distribution of device of that system had decreased about 10 to 20m sec compared to a system which had high life-time recovery.

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A Study on the Characteristics of the Radio-Frequency Induction Discharge Plasma (고주파 유도방전 플라즈마 특성에 관한 연구)

  • 박원주
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.13 no.3
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    • pp.34-39
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    • 1999
  • Electron temperature and electron density were rreasured in a radio-frequency inductively coupled plasma (RFICP) using a Langmuir probe method. Measurerrent was conducted in an argon discharge for pressures from 10 mTorr to 40 mTorr and input rf rnwer from 100 W to 600 W. Spatial distribution electroo temperature and electron density were rreasured for discharge with satre aspect ratio (R/L=2). Electron temperature and electron density were discovered depending on both pressure and power. Electron density was increased with iocreasing input power, but saturated at 450 W. Electron density was iocreased with iocreasing pressure. Radial distribution of the electron density was peaked at the rnsition which was a little rmved from center toward quartz window. Normal distribution of the electron density was peaked in the center between quartz plate and substrate. The above results could contribute to understand the Mechanism of Radio-Frequency Inductively Discharge Plasma.Plasma.

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Properties of Inductively coupled Ar/CH4 plasma based on plasma diagnostics with fluid simulation

  • Cha, Ju-Hong;Son, Ui-Jeong;Yun, Yong-Su;Han, Mun-Gi;Kim, Dong-Hyeon;Lee, Ho-Jun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.210.2-210.2
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    • 2016
  • An inductively coupled plasma source was prepared for the deposition of a-C:H thin film. Properties of the inductively coupled plasma source are investigated by fluid simulation including Navier-Stokes equations and home-made tuned single Langmuir probe. Signal attenuation ratios of the Langmuir probe harmonic frequency were 13.56Mhz and 27.12Mhz. Dependencies of plasma parameters on process parameters were accord with simulation results. Ar/CH4 plasma simulation results shown that hydrocarbon radical densities have their lowest value at the vicinity of gas feeding line due to high flow velocity. For input power density of 0.07W/cm3, CH radical density qualitatively follows electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density. The result suggest that optimization of discharge power is important for controlling deposition film quality in high density plasma sources.

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Antibacterial Activity of Dielectric Barrier Discharge Plasma against Main Food-borne Bacteria in Suspensions (유전체장벽방전 플라즈마에 의한 주요식중독세균의 살균 효과)

  • Choi, Man-Seok;Kim, Ji Yoon;Jeon, Eun Bi;Park, Shin Young
    • Korean Journal of Fisheries and Aquatic Sciences
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    • v.52 no.6
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    • pp.617-624
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    • 2019
  • Dielectric barrier discharge (DBD) plasma is one of the promising next generation non-thermal technologies for food sterilization. The present study investigated the effects of DBD plasma on the reduction of most common food-borne pathogenic bacteria (Staphylococcus aureus, Bacillus cereus, Vibrio parahaemolyticus, Salmonella enterica) and sanitary indicative bacteria (Escherichia coli) in the suspension (initial inoculum of approx. 9 log CFU/mL). The bacterial counts were significantly (P<0.05) reduced with the increase in the treatment time (1-30 min) of DBD plasma in the suspension. The D-values (time for 90% reduction) of DBD plasma by first-order kinetics for S. aureus, B. cereus, V. parahaemolyticus, S. enterica, and E. coli were 17.76, 19.96, 32.89, 21.55, and 15.24 min, respectively (R2>0.90). These results specifically showed that 30 min of DBD plasma treatment in > 90% reduction of seafood-borne pathogenic and sanitary indicative bacteria. This suspension study may provide the basic data for use in seafood processing and distribution.

Simulations for the cesium dynamics of the RF-driven prototype ion source for CRAFT N-NBI

  • Yalong Yang;Yong Wu;Lizhen Liang;Jianglong Wei;Rui Zhang;Yahong Xie;Wei Liu;Chundong Hu
    • Nuclear Engineering and Technology
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    • v.56 no.4
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    • pp.1145-1152
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    • 2024
  • To realize an initial objective of the negative ion-based neutral beam injection (N-NBI) at the Comprehensive Research Facility for Fusion Technology (CRAFT) test facility, which targets an H0 beam power of 2 MW at an energy of 200-400 keV and a pulse duration of 100 s, it is crucial to study the cesium dynamics of the negative ion source. Here a numerical simulation program CSFC3D is developed and applied to simulate the distribution and time dynamics of cesium during short pulses. The calculations show that most of the cesium on the plasma grid (PG) area originates from the release of cesium that is accumulated within the ion source in the plasma phase. Increasing the wall temperature reduces the loss of cesium on the wall of the ion source. Furthermore, the thickness of the cesium monolayer is directly influenced by the PG temperature. Both simulated and experimental results demonstrate that maintaining the PG temperature between 180 ℃ and 200 ℃ is essential for enhancing the performance of the ion source and optimizing the cesium behavior.