• Journal of the Semiconductor & Display Technology
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• 제4권3호
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• pp.35-38
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• 2005

Due to high permeability of the ferrite cores, the characteristics of the inductively coupled plasma(ICP) are expected to be greatly improved. We investigated the effect of the ferrite cores on conventional inductively coupled plasma. It was observed that the current and voltage in the ICP antenna are slightly decreased and the power transfer efficiency is increased. However, due to eddy current and hysteresis loss, plasma density in the ICP with the ferrite cores is not increased. It seems that the ICP with the ferrite cores at low frequency ($\∼$100 kHz) will be greatly improved since the losses at the low frequency can be negligible.

• Journal of Industrial Technology
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• 제27권A호
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• pp.157-162
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• 2007

This paper describes a power supply aimed at the production of plasma and its control method for a magnetron sputter in thin film coating process of PVD(Physical Vapor Deposition). Plasma load changes its impedance characteristic easily according to operating conditions and frequently produces electric arc. So. in this paper, a plasma power supply with improved output control performance in the transient state for the plasma load is presented. Also, it includes a strategy that can detect arc rapidly and reduce arc energy effectively into a load. The validity of the proposed power supply through experimentation on 20kW system was proved.

• Transactions on Electrical and Electronic Materials
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• 제3권3호
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• pp.14-17
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• 2002

The HDP (High Density Plasma) CVD process consists of a simultaneous sputter etch and chemical vapor deposition. As CMOS process continues to scale down to sub- quarter micron technology, HDP process has been widely used fur the gap-fill of small geometry metal spacing in inter-metal dielectric process. However, HBP CVD system has some potential problems including plasma-induced damage. Plasma-induced gate oxide damage has been an increasingly important issue for integrated circuit process technology. In this paper, thin gate oxide charge damage caused by HDP deposition of inter-metal dielectric was studied. Multiple step HDP deposition process was demonstrated in this work to prevent plasma-induced damage by introducing an in-situ top SiH$_4$ unbiased liner deposition before conventional deposition.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 한국반도체및디스플레이장비학회 2003년도 춘계학술대회 발표 논문집
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• pp.12-17
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• 2003

본 연구에서는 MICP Etching system 을 이용한 Via contact 및 Deep contact hole etch process 특성을 연구하였다. Langmuir probe 를 이용한 MICP source 의 Plasma density & electron temperature 측정하였고 탄소와 플로우르를 포함하는 혼합 Plasma 를 형성하여 RF frequency, wall temperature, chamber gap, gas chemistry 등의 변화에 따른 식각 특성을 조사하였다. Plasma density 는 1000w 에서 $10^{11}$/$cm^3$ 이상의 high density plasma와 uniform plasma 형성을 확인하였고 $CH_{2}F_{2}$와 CO의 적절한 혼합비를 이용하여 Oxide to PR 선택비가 10 이상인 고선택비 조건을 확보하였다. 고선택비 형성에 따라 Polymer 형성이 많이 되었고 이를 개선하기 위하여 반응 챔버의 온도 조절을 통하여 Polymer 증착 방지에 효과적인 것을 확인하였다. MICP source를 이용하여 탄소와 플로우르의 혼합 가스와 식각 챔버의 온도 조절에 의한 선택비 증가를 확보하여 High Aspect Ratio Contact Hole Etch 가능성을 확보하였다.

• Macromolecular Research
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• 제17권11호
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• pp.886-893
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• 2009

Surface modifications using a radio frequency Ar-plasma treatment were performed on a polypropylene (PP) blend used for automotive bumper fascia. The surface characterization and morphology were examined. With increasing aging time, there was an increase in wettability, oxygen containing polar functional groups (i.e., C-O, C=O and O-C=O) due to oxidation, the amount of tale, and bearing depth and roughness on the PP surface, while there was a decrease in the number of hydrocarbon groups (i.e., C-C and C-H). AFM indicated that the Ar-plasma-treatment on a PP blend surface transforms the wholly annular surface into a locally dimpled surface, leading to an improvement in wettability. SEM showed that the PP layer observed in the non-plasma-treated sample was removed after the Ar-plasma treatment and the rubber particles were exposed to the surface. The observed surface characterization and morphologies are responsible for the improved wettability and interfacial adhesion between the PP blend substrate and bumper coating layers.

• Proceedings of the Korean Society For Composite Materials Conference
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• 한국복합재료학회 1999년도 추계학술발표대회 논문집
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• pp.36-39
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• 1999

Steel tire cords were coated via RF Plasma Polymerization of acetylene in order to enhance adhesion to rubber compounds. Adhesion of tire cords was measured by TACT as a function of plasma polymerization and argon etching conditions such as power, treatment time and chamber pressure. Tested tire cords were analysed by SEM to elucidate the adhesion mechanism. The highest adhesion values were obtained with argon etching condition at 90W, 10min, 30mtorr followed by acetylene plasma polymerization condition at 10W, 30sec., 30mtorr. In SEM analysis, the plasma polymerized tire cord at the optimized condition showed 100% rubber coverage as observed from brass-plated steel tire cords.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.218-221
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• 2008

Bottom-gate microcrystalline silicon thin film transistors (${\mu}c$-Si:H TFTs) were fabricated on glass and transparent polyimide substrates by conventional 13.56 MHz RF plasma enhanced chemical vapor deposition at $200^{\circ}C$. The deposition rate of the ${\mu}c$-Si:H film is 24 nm/min and the amorphous incubation layer near the ${\mu}c$-Si:H/silicon nitride interface is unobvious. The threshold voltage of ${\mu}c$-Si:H TFTs can be improved by $H_2$ or $NH_3$ plasma pretreatment silicon nitride film.

• Journal of the Korean Ceramic Society
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• 제48권1호
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• pp.1-5
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• 2011

Silicon carbide (SiC) has recently drawn an enormous industrial interest because of its useful mechanical properties such as thermal resistance, abrasion resistance and thermal conductivity at high temperature. RF Thermal plasma (PL-35 Induction Plasma, Tekna CO., Canada) has been utilized for synthesis of high purity SiC powder from cheap inorganic solution (Tetraethyl Orthosilicate, TEOS). It is found that the powders by thermal plasma consist of SiC with free carbon and amorphous silica ($SiO_2$) and, by thermal treatment and HF treatment, the impurities are driven off resulting high purity SiC nano-powder. The synthesized SiC powder lies below 30 nm and its properties such microstructure, phase composition, specific surface area and free carbon content have been characterized by X-ay diffraction (XRD), field emission scanning electron microscopy (FE-SEM), thermogravimetric (TG) and Brunauer-Emmett-Teller (BET).

• Journal of Surface Science and Engineering
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• 제38권5호
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• pp.183-187
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• 2005

The quaternary ZrCrAIN nanocomposite thin films are synthesized by Closed-Field Unbalanced Magnetron Sputtering (CFUBMS). Microstructure and mechanical properties of ZrCrAIN nanocomposite thin films are studied. Grain refinement of ZrCrAIN nanocomposite thin film is occurred by controlling $N_{2}$ partial pressure. Maximum hardness value according to the various $N_{2}$ partial pressures is obtained at 45 GPa. It is also conformed that critical value of the grain size (d) needs to achieve the maximum hardness.

• Journal of Surface Science and Engineering
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• 제40권1호
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• pp.1-5
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• 2007

Quaternary TiZrAlN nanocomposite thin films were synthesized by Closed-Field Unbalanced Magnetron Sputtering (CFUBMS), and their microstructure and mechanical characteristics were examined. The grain refinement of the TiZrAlN nanocomposite thin films was controlled by adjusting the $N_2$ partial pressure. The hardness of the film varied with the $N_2$ partial pressure and the maximum value was obtained approximately 47 GPa. It was also confirmed that there is a critical value of the grain size($d_c$) to need maximum hardness.