• 반도체디스플레이기술학회지
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• 제17권4호
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• pp.97-100
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• 2018

$NF_3$ Plasma etching of silicon was conducted by injecting only $NF_3$ gas into reactive ion etching. $NF_3$ Plasma etching was done in intermediate pressure. Silicon etching by $NF_3$ plasma in reactive ion etching was diagnosed through residual gas analyzer and optical emission spectroscopy. In plasma etching, optical emission spectroscopy is generally used to know what kinds of species in plasma. Also, residual gas analyzer is mainly to know the byproducts of etching process. Through experiments, the results of optical emission spectroscopy during silicon etching by $NF_3$ plasma was analyzed with connecting the results of etch rate of silicon and residual gas analyzer. It was confirmed that $NF_3$ plasma etching of silicon in reactive ion etching accords with the characteristic of reactive ion etching.

• 한국재료학회지
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• 제29권11호
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• pp.715-719
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• 2019

Molybdenum is a low-resistivity transition metal that can be applied to silicon devices using Si-metal electrode structures and thin film solar cell electrodes. We investigate the deposition of metal Mo thin film by plasma-enhanced atomic layer deposition (PE-ALD). $Mo(CO)_6$ and $H_2$ plasma are used as precursor. $H_2$ plasma is induced between ALD cycles for reduction of $Mo(CO)_6$ and Mo film is deposited on Si substrate at $300^{\circ}C$. Through variation of PE-ALD conditions such as precursor pulse time, plasma pulse time and plasma power, we find that these conditions result in low resistivity. The resistivity is affected by Mo pulse time. We can find the reason through analyzing XPS data according to Mo pulse time. The thickness uniformity is affected by plasma power. The lowest resistivity is $176{\mu}{\Omega}{\cdot}cm$ at $Mo(CO)_6$ pulse time 3s. The thickness uniformity of metal Mo thin film deposited by PE-ALD shows a value of less than 3% below the plasma power of 200 W.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.223-223
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• 2012

Surface engineering plays a significant role in fabricating highly functionalized materials applicable to industrial and biomedical fields. Surface wrinkles and folds formed by ion beam or plasma treatment are buckling-induced patterns and controlled formation of those patterns has recently gained considerable attention as a way of creating well-defined surface topographies for a wide range of applications. Surface wrinkles and folds can be observed when a stiff thin layer attached to a compliant substrate undergoes compression and plasma treatment is one of the techniques that can form stiff thin layers on compliant polymeric substrates, such as poly (dimethylsiloxane) (PDMS). Here, we report two effective methods using plasma modification techniques for controlling the formation of surface wrinkles and folds on flat or patterned PDMS substrates. First, we show a method of creating wrinkled diamond-like carbon (DLC) film on grooved PDMS substrates. Grooved PDMS substrates fabricated by a molding method using a grooved master prepared by photolithography and a dry etching process were treated with argon plasma and subsequently coated with DLC film, which resulted in the formation of wrinkled DLC film aligning perpendicular to the steps of the pre-patterned ridges. The wavelength and the amplitude of the wrinkled DLC film exhibited variation in the submicron- to micron-scale range according to the duration of argon plasma pre-treatment. Second, we present a method for controlled formation of folds on flat PDMS substrates treated with oxygen plasma under large compressive strains. Flat PDMS substrates were strained uniaxially and then treated with oxygen plasma, resulting in the formation of surface wrinkles at smaller strain levels, which evolved into surface folds at larger strain levels. Our results demonstrate that we can control the formation and evolution of surface folds simply by controlling the pre-strain applied to the substrates and/or the duration of oxygen plasma treatment.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.179-179
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• 2016

A radio-frequency (RF) Inductively Coupled Plasma (ICP) torch system was used for boron-nitride nano-tube (BNNT) synthesis. Because of electrodeless plasma generation, no electrode pollution and effective heating transfer during nano-material synthesis can be realized. For stable plasma generation, argon and nitrogen gases were injected with 60 kW grid power in the difference pressure from 200 Torr to 630 Torr. Varying hydrogen gas flow rate from 0 to 20 slpm, the electrical and optical plasma properties were investigated. Through the spectroscopic analysis of atomic argon line, hydrogen line and nitrogen molecular band, we investigated the plasma electron excitation temperature, gas temperature and electron density. Based on the plasma characterization, we performed the synthesis of BNNT by inserting 0.5~1 um hexagonal-boron nitride (h-BN) powder into the plasma. We analysis the structure characterization of BNNT by SEM (Scanning Electron Microscopy) and TEM (Transmission Electron Microscopy), also grasp the ingredient of BNNT by EELS (Electron Energy Loss Spectroscopy) and Raman spectroscopy. We treated bundles of BNNT with the atmospheric pressure plasma, so that we grow the surface morphology in the water attachment of BNNT. We reduce the advancing contact angle to purity bundles of BNNT.

• 한국재료학회지
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• 제16권11호
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• pp.681-686
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• 2006

Plasma nitrocarburising and plasma post oxidation were performed to improve the wear and corrosion resistance of S45C and SCM440 steel by a plasma ion nitriding system. Plasma nitrocarburizing was conducted for 3h at $570^{\circ}C$ in the nitrogen, hydrogen and methane atmosphere to produce the ${\varepsilon}-Fe_{2-3}$(N, C) phase. Plasma post oxidation was performed on the nitrocarburized samples with various oxygen/hydrogen ratio at constant temperature of $500^{\circ}C$ for 1 hour. The very thin magnetite ($Fe_3O_4$) layer $1-2{\mu}m$ in thickness on top of the $15{\sim}25{\mu}m$ ${\varepsilon}-Fe_{2-3}$(N, C) compound layer was obtained by plasma post oxidation. A salt spray test and electrochemical testing revealed that in the tested 5% NaCl solution, the corrosion characteristics of the nitrocarburized compound layer could be further improved by the application of the superficial magnetite layer. Throttle valve shafts were treated under optimum plasma processing conditions. Accelerated life time test results, using throttle body assembled with shaft treated by plasma nitrocarburising and post oxidation, showed that plasma nitrocarburizing and plasma post oxidation processes could be a viable technology in the very near future which can replace $Cr^{6+}$ plating.

• 한국연소학회:학술대회논문집
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• 한국연소학회 2006년도 제33회 KOSCO SYMPOSIUM 논문집
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• pp.15-19
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• 2006

The meat consumption produces a lot of bone waste everyday. Dumping bone waste without treatment results into environmental hazards. Conventional treatment by pyrolysis is slow, inefficient and produces hazardous by-products. In the work, an investigation of bone waste incinerated using thermal plasma technology is presented. A high temperature arc plasma torch operated at 33 kW was employed for the experiments. Bone waste was incinerated to remove the infectious organic matter and to vitrify the inorganic matter using plasma torch. Bone waste was reduced its 2/3 weight after the treatment. The process was highly efficient, economical, convenient, and fuel free. This method could be used as an alternative method for disposal of bone waste, small infectious animals, hazardous hospital waste, etc.

• 접착 및 계면
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• 제7권1호
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• pp.23-29
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• 2006

Polymer thin films of pentafluorostyrene (PFS) were prepared by RF plasma (13.56 MHz) polymerization in continuous wave (CW) mode, as a function of plasma power and monomer pressure. Conditions for film preparation were optimized by measuring the solvent resistance of plasma polymer thin films in DMAc, NMP, THF, acetone and chloroform, as well as by evaluating the optical clarity via UV-VIS measurements. Pulsed mode plasma polymerization was also utilized to enhance the optical properties of the films by varying the period of on-time and duty cycle. Finally, the films were subjected to refractive index measurements and analyzed by ${\alpha}$-step, TGA and FT-IR.

• The Korean Journal of Ceramics
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• 제2권4호
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• pp.197-202
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• 1996

The highly oriented diamond particles were deposited on the mirror-polished (100) silicon substrates in the bell-jar type microwave plasma deposition system using a three-step process consisting if carburization, bias-enhanced nucleation and growth. By adjusting the geometry of the substrate and substrate holder, very dense disc-shaped plasma was formed over the substrate when the bias voltage was below -200V. Almsot perfectly oriented diamond films were obtained only in this dense disc-shaped plasma. From the results of the optical emission spectra of the dense disc-shaped plasma, it was found that the concentrations of atomic hydrogen and hydrocarbon radical were increased with negative bias voltage. It was also found that the highly oriented diamonds were deposited in the region, where the intensity ratios of carbonaceous species to atomic hydrogen are saturated.

• 한국군사과학기술학회지
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• 제5권4호
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• pp.19-26
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• 2002

A chamber enduring 3,000 bars and an electrical high voltage power system have been designed and installed for studying the characteristics of the plasma produced in electro-thermal chemical propulsion system. In order to test the structural characteristics, polyethylene injectors were used which have 4 or 6 mm inner diameter and several lengths from 15 to 70 mm. The capacitors were charged at the voltages of 5.2, 7.3 and 10.4 kV which correspond to 5.58, 11 and 22.3 kJ in charging energy. The observed resistivities of the plasma injector are close to those predicted by a theoretical model that describes the plasma resistivity according to high current density.

• Transactions on Electrical and Electronic Materials
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• 제9권4호
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• pp.156-162
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• 2008

We report results on a study of inductively coupled plasma (ICP) etching of Parylene-C (poly-monochloro-para-xylylene) films using an $O_2$ gas. Effects of process parameters on etch rates were investigated and are discussed in this article from the standpoint of plasma parameter measurements, performed using a Langmuir probe and modeling calculation. Process parameters of interest include ICP source power and pressure. It was shown that major etching agent of polymer films was oxygen atoms O($^3P$). At the same time it was proposed that positive ions were not effective etchant, but ions played an important role as effective channel of energy transfer from plasma towards the polymer.