• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.61.1-61.1
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• 2015

Nanoscale semiconductor plasma processing has become one of the most challenging issues due to the limits of physicochemical fabrication routes with its inherent complexity. The mission of future and emerging plasma processing for development of next generation semiconductor processing is to achieve the ideal nanostructures without abnormal profiles and damages, such as 3D NAND cell array with ultra-high aspect ratio, cylinder capacitors, shallow trench isolation, and 3D logic devices. In spite of significant contributions of research frontiers, these processes are still unveiled due to their inherent complexity of physicochemical behaviors, and gaps in academic research prevent their predictable simulation. To overcome these issues, a Korean plasma consortium began in 2009 with the principal aim to develop a realistic and ultrafast 3D topography simulator of semiconductor plasma processing coupled with zero-D bulk plasma models. In this work, aspects of this computational tool are introduced. The simulator was composed of a multiple 3D level-set based moving algorithm, zero-D bulk plasma module including pulsed plasma processing, a 3D ballistic transport module, and a surface reaction module. The main rate coefficients in bulk and surface reaction models were extracted by molecular simulations or fitting experimental data from several diagnostic tools in an inductively coupled fluorocarbon plasma system. Furthermore, it is well known that realistic ballistic transport is a simulation bottleneck due to the brute-force computation required. In this work, effective parallel computing using graphics processing units was applied to improve the computational performance drastically, so that computer-aided design of these processes is possible due to drastically reduced computational time. Finally, it is demonstrated that 3D feature profile simulations coupled with bulk plasma models can lead to better understanding of abnormal behaviors, such as necking, bowing, etch stops and twisting during high aspect ratio contact hole etch.

• Journal of Astronomy and Space Sciences
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• 제17권1호
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• pp.99-106
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• 2000

When a deployed probe is biased by a high positive potential during a space experiment, the payload is induced to a negative voltage in order to balance the total current in the whole system. The return currents are due to the responding ions and secondary electrons on the payload surface. In order to understand the current collection mechanism, the process was simulated with a combination of resistor, inductor, and capacitor in SPICE program which was equivalent to the background plasma sheath. The simulation results were compared with experimental results from SPEAR-3 (Space Power Experiment Aboard Rocket-3). The return current curve in the simulation was compatible to the experimental result, and the simulation helped to predict the transient plasma response to a high voltage during the plasma sheath formation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.158.1-158.1
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• 2013

Microwave는 일반적으로 300 [MHz]~30 [GHz] 사이의 주파수를 가지는 전파로 1 [m] 이하의 파장을 가진다. Microwave를 이용한 플라즈마의 경우 낮은 이온 에너지, 효율적인 전자 가열, 넓은 동작압력 범위, 높은 밀도 등의 장점을 가지고 있어 PECVD(Plasma Enhanced Chemical Vapor Deposition)에 적합한 플라즈마 소스라고 할 수 있다. 또한 Microwave는 파장의 길이가 증착이 이루어지는 진공 챔버의 길이보다 매우 작기 때문에 대면적 적용성이 용이하므로 현재 많은 연구가 이루어지고 있다. 본 연구에서는 Fluid Simulation을 통해 Maxwell's equation, continuity equation, electromagnetic wave equation 등을 이용하여 Microwave의 파워 및 압력에 따른 플라즈마 parameter를 계산하고, 자체 제작한 Linear microwave plasma 장치에서 정전 탐침(Langmuir Probe)을 이용하여 플라즈마 Parameter를 측정하였다. 또한 Simulation 결과와 실험결과를 비교 분석하였다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회B
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• pp.2506-2511
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• 2007

The coupled simulation is performed to find out the interaction of arc plasmas with surrounding materials in a thermal puffer plasma chamber. In order to be more realistic, PTFE nozzle ablation and Cu electrode evaporation, which are caused by high temperature of arc plasmas, are considered together. Pressure rise and temperature inside the chamber generated during the whole arcing history are investigated with the applied currents. It is very important to define how thermal flow and mass transfer are processing between the arc plasma and surrounding materials for further understanding complex physics inside the chamber. It is concluded that the result might be very useful to understand the mechanism happened inside and to design thermal puffer plasma chambers, but further experimental studies are required to verify the results for the more practical applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.528-528
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• 2012

Recently, atmospheric pressure plasmas attract lots of interests for the useful applications such as surface modification and bio-medical treatment. In this study, a particle-in-cell Monte Carlo collision (PIC-MCC) simulation was adopted to investigate the discharge characteristics of a planar micro dielectric barrier discharge (DBD) with a driving frequency from 13.56 MHz to 162.72 MHz and with a gap distance of 80 micrometers. The variation of frequency, in the change in the electron energy probability function (EEPF). Through the relation between the ion trajectories and the frequency, results in the change of EEPFs is achievable with the turning point of frequency mode. Therefore, it is possible to categorize the efficient operation range of DBDs for its applications by controlling the interactions between plasmas and neutral gas for the generation of preferable radicals.

• 한국우주과학회:학술대회논문집(한국우주과학회보)
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• 한국우주과학회 2009년도 한국우주과학회보 제18권2호
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• pp.43.1-43.1
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• 2009

Electromagnetic radiation at the plasma frequency and its second harmonic, the so-called plasma emission, is fundamental process responsible for solar type II and III radio bursts. There have also been occasional observations of higher-harmonic plasma emissions in the solar-terrestrial environment. We will present that the simulation effort on characterizing the electron beam-generated plasma emission process at POSTECH. We have developed fully electromagnetic particle-in-cell (PIC) simulation code with three dimensions. We simulated harmonic plasma emission with various beam condition. Qualitative comparison with the traditional plasma frequency and second harmonic radiation theory is in good agreement. Higher harmonic emissions agree with the theory of coalescence of Langmuir and harmonic EM wave.

• 반도체디스플레이기술학회지
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• 제4권2호
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• pp.11-14
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• 2005

In plasma processing reactors, it is common practice to control plasma density and ion bombardment energy by manipulating excitation voltage and frequency. In this paper, a dually excited capacitively coupled rf plasma reactor is self-consistently simulated with a three moment model. Effects of phase differences between primary and secondary voltage waves, simultaneously modulated at various combinations of commensurate frequencies, on plasma properties are investigated. The simulation results show that plasma potential and density as well as primary self-dc bias are nearly unaffected by the phase lag between the primary and the secondary voltage waves. The results also show that, with the secondary frequency substantially lower than the primary frequency, secondary self·do bias remains constant regardless of the phase lag. As the secondary frequency approaches to the primary frequency, however, the secondary self-dc bias becomes greatly altered by the phase lag, and so does the ion bombardment energy at the secondary electrode. These results demonstrate that ion bombardment energy can be more carefully controlled through plasma simulation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제35회 하계학술대회 초록집
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• pp.355-355
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• 2008

• 전기학회논문지P
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• 제63권4호
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• pp.317-321
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• 2014

This paper describes the information for quantitative simulation of weakly ionized plasma. We must grasp the meaning of the plasma state condition to utilize engineering application and to understand materials of plasma state. Using quantitative simulations of weakly ionized plasma, we can analyze gas characteristic. In this paper, the electron Ionization and diffusion Coefficients in $CH_4$ has been analysed over the E/N range 0.1~300[Td], at the 300[$^{\circ}K$] by the two term approximation Boltzmann equation method and Monte Carlo Simulation. Boltzmann equation method has also been used to predict swarm parameter using the same cross sections as input. The behavior of electron has been calculated to give swarm parameter for the electron energy distribution function has been analysed in $CH_4$ at E/N=10, 100 for a case of the equilibrium region in the mean energy. A set of electron collision cross section has been assembled and used in Monte Carlo simulation to predict values of swarm parameters. The result of Boltzmann equation and Monte Carlo Simulation has been compared with experimental data by Ohmori, Lucas and Carter. The swarm parameter from the swarm study are expected to sever as a critical test of current theories of low energy scattering by atoms and molecules.

• 전자공학회논문지
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• 제50권10호
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• pp.124-131
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• 2013

플라즈마(Plasma) 공정 시뮬레이션에서 가장 중요한 요소는 식각(Etching) 과정으로 특성 정보 프로파일(Feature Profile)에 의존하는 식각 비율(Etch Rate)을 계산하는 것이다. 식각 비율을 결정 요소는 이온 플럭스(Ion Flux), 뉴트럴 플럭스(Neutral Flux), 가스 종 온도 등 다양하지만 본 논문에서는 이온 플럭스(Ion Flux)에 한정하여 고속으로 이온 플럭스를 계산하기 위한 스캔 방법을 제안했다. 그리고 일반적으로 많이 사용되어지는 몬테카를로(Monte Carlo) 방법과 제안 방법을 가우시안 분포 및 코사인 분포를 이용하여 실험하고 서로 비교 분석하였다. 본 논문에서 제안한 방법이 몬테카를로 방법과 비교 했을 때 보다 효율적으로 정확한 이온 플럭스를 계산 할 수 있음을 검증하였다.