• Journal of Sensor Science and Technology
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• v.16 no.3
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• pp.229-233
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• 2007

The indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. The ITO thin films deposited at room temperature because CR39 substrate its glass-transition temperature is $130^{\circ}C$. The ITO thin films used bottom and top electrode and for organic thin film transparent transistors (OTFTs). The ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300-800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of the ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300-800 nm) measured without post annealing process and a low resistivity value $9.83{\times}10^{-4}{\Omega}cm$ was measured thickness of 300 nm. All fabrication process of ITO thin films did not exceed $80^{\circ}C$.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1531-1533
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• 1997

We prepared polyimide film by electrophoretic deposition onto glass film as a sensing materials of humidity, and treated with plasma discharging as a function of discharging power to improve performance of the sensor. Then evaluated the characteristics of polyimide on humidity.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2022.05a
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• pp.25-26
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• 2022

플라즈마 공정장비 지능화를 이루기 위해서는 플라즈마 공정장비에서 플라즈마를 생성하는 다양한 조건 값에 따라 변화되는 플라즈마의 상태 값이 필요하며 이러한 데이터를 수집하기 위해 여러 종류의 측정 센서를 사용한다. 측정 센서에서 생산된 데이터를 이용하여 다양한 분석 기법을 사용하여 플라즈마 생성 조건 및 센서 데이터의 주요한 특징점 간의 관계성을 파악함으로써 플라즈마 공정장비의 상태를 진단할 수 있다. 이를 위해 플라즈마 공정장비에서 생산된 데이터를 기반으로 다양한 데이터 분석 연구를 통한 데이터간의 연관성을 보여주도록 한다.

• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.163-170
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• 1998

An ion energy spectrometer which has the $45^{\circ}$ parallel electrostatic deflection plate was designed and constructed for measuring ion temperature in high temperature plasma. The energy calibration and the energy resolution were studied in detail for a hydrogen ion at the $0.24{\sim}1.92\;keV$ energy using electrostatic accelerator with a duoplasmatron ion source. The voltage of the deflection plate was linearly increased for the decreased ion detector position at the constant ion energy and decreased for the increased ion energy at the fixed ion detector position. The inclination of the deflection plate voltage to the ion energy was between 0.92 and 1.61, and linearly decreased for the increased the ion detector position. The measured energy resolution, which is $4.2%\;{\sim}\;11.6%$ in this experiment region, was improved for the increased ion dector position and ion energy. The relative efficiency was increased for the decreased the ion detector position. The ion energy spectrum of the DC plasma in the multi-purpose plasma generator was measured using this equipment. The ion temperature was 203-205 eV at the discharge voltage 320 V, discharge current 1.7 A.

• Korean Chemical Engineering Research
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• v.47 no.6
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• pp.715-719
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• 2009

The phase change electrode board for the bio-information detection through electrical property response of phase change material was developed in this study. We manufactured the electrode board using Aluminum first that is widely used in conventional semiconductor device process. Without further treatment, these aluminum electrodes tend to contain voids in PETEOS(plasma enhanced tetraethyoxysilane) material that are easily detected by cross-sectional SEM(Scanning Electron Microscope). The voids can be easily attacked and transformed into holes in between PETEOS and electrodes after etch back and washing process. In order to resolve this issue of Al electrode board, we developed a electrode board manufacturing method using low resistivity TiN, which has advantages in terms of the step-coverage of phase change($Ge_2Sb_2Te_5$, GST) thin film as well as thermodynamic stability, without etch back and washing process. This TiN material serves as the top and bottom electrode in PRAM(Phase-change Random Access Memory). The good connection between the TiN electrode and GST thin film was confirmed by observing the cross-section of TiN electrode board using SEM. The resistances of amorphous and crystalline GST thin film on TiN electrodes were also measured, and 1000 times difference between the amorphous and crystalline resistance of GST thin film was obtained, which is well enough for the signal detection.

• Journal of the Korea Society of Computer and Information
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• v.18 no.3
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• pp.107-118
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• 2013

In this paper, we developed the semiconductor monitoring system for the etching process. Around the world, expert companies are competing fiercely since the semiconductor industry is a leading value-added industry that produces the essential components of electronic products. As a result, many researches have been conducted in order to improve the quality, productivity, and characteristics of semiconductor products. Process monitoring techniques has an important role to give an equivalent quality and productivity to produce semiconductor. In fact, since the etching process to form a semiconductor circuit causes great damage to the semiconductors, it is very necessary to develop a system for monitoring the process. The proposed monitoring system is mainly focused on the dry etching process using plasma and it provides the detailed observation, analysis and feedback to managers. It has the functionality of setting scenarios to match the process control automatically. In addition, it maximizes the efficiency of process automation. The result can be immediately reflected to the system since it performs real-time monitoring. UI (User Interface) provides managers with diagnosis of the current state in the process. The monitoring system has diverse functionalities to control the process according to the scenario written in advance, to stop the process efficiently and finally to increase production efficiency.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.40 no.4
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• pp.346-353
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• 2012

The Laser-Induced Breakdown Spectroscopy (LIBS) has great advantages as an analytical technique, namely real-time analysis without sample preparation, ideal for mobile chemical sensor for space exploration. The LIBS plasma characteristics are strongly dependent on the surrounding pressure. In this study, seven types of target (C, Ti, Ni, Cu, Sn, Al, Zn) were investigated for their elemental lifetime. The target was located in vacuum chamber which has the pressure range of 760 to $10^{-5}$ torr. As the pressure is decreased, the elemental lifetimes of carbon and titanium declined, while all other targets showed increased lifetimes until reaching 1 torr and declined with continued pressure decrease. The boiling point and electronegativity amongst the physicochemical properties of the samples are used to explain this peculiarity.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.189-194
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• 1999

The heat treatment effects of the undoped ZnO and Al doped ZnO(AZO) transparent conductive films prepared by rf magnetron sputtering were investigated. The variations of the electrical and optical properties with heat treatment temperature and ambient were studied. The resistivity of the un doped ZnO films heat treated in air and $H_z$ plasma for 1 hour increased rapidly above $200^{\circ}C$ and $300^{\circ}C$, respectively. And that of the ZnO:Al films heat treated in air also increased rapidly above $300^{\circ}C$. On the other hand that of the ZnO:Al films heat treated in $H_z$ plasma was constant regardless of heat treatment temperature. The optical transmittance above 550nm is about 90% for all thin films regardless of impurity doping, the heat treatment temperature and ambient.

• Journal of Sensor Science and Technology
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• v.25 no.1
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• pp.46-50
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• 2016

During KSTAR plasma experiments, torsional $Alfv\acute{e}n$ waves in the frequency of few GHz or below were detected. To understand this plasma waves during the crash of MHD instabilities, an RF spectrometer has been developed for detection of the radiated RF signals in the KSTAR Tokamak. It has the capability of broadband RF spectral measurement (50 ~ 400 MHz). To detect the broadband RF signals which are radiated from the KSTAR systems, a broadband antenna is the key feature of the RF spectrometer. In this paper, a broadband bowtie antenna for detection of $Alfv\acute{e}n$-waves in the KSTAR Tokamak is presented. Planar-type bowtie antenna is designed and fabricated on an FR4 substrate with thickness of 1.6 mm. The antenna consists of bowtie shaped balanced radiators and broadband planar balun. The antenna is designed to have an input impedance of 50 Ohm, and a taper-shaped balun is adopted for field and impedance matching between 50 Ohm transmission line to 110 Ohm feeding network of balanced radiators. The implemented antenna provides around -3 to 3 dBi of gain for the whole frequency band. The VSWR of the bowtie antenna is less than 12:1 over the frequency bandwidth of 50 to 2000 MHz.

• Journal of Sensor Science and Technology
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• v.12 no.5
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• pp.218-224
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• 2003

The devices of n-channel poly silicon thin film transistors(TFTs) hydrogenated by plasma, $H_2$ and $H_2$/plasma processes are fabricated. The carriers sensitivity characteristics are analyzed with voltage bias stress at the gate oxide. The parametric sensitivity characteristics caused by electrical stress conditions in hydrogenated devices are investigated by measuring the drain current, threshold voltage($V_{th}$), subthreshold slope(S) and maximum transconductance($G_m$) values. As a analyzed results, the degradation characteristics in hydrogenated n-channel polysilicon thin film transistors are mainly caused by the enhancement of dangling bonds at the poly-Si/$SiO_2$ interface and the poly-Si grain boundary due to dissolution of Si-H bonds. The generation of traps in gate oxide are mainly dued to hot electrons injection into the gate oxide from the channel region.