• Title/Summary/Keyword: Plasma Properties

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Effect of Inductively Coupled Plasma (ICP) Power on the Properties of Ultra Hard Nanocrystalline TiN Coatings (유도결합 플라즈마 파워변화에 따른 초경도 나노결정질 TiN 코팅막의 물성변화)

  • Chun, Sung-Yong
    • Journal of the Korean Ceramic Society
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    • v.50 no.3
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    • pp.212-217
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    • 2013
  • Ultra hard TiN coatings were fabricated by DC and ICP (inductively coupled plasma) magnetron sputtering techniques. The effects of ICP power, ranging from 0 to 300 W, on the coating microstructure, crystallographic, and mechanical properties were systematically investigated with FE-SEM, AFM, HR-XRD and nanoindentation. The results show that ICP power has a significant influence on the coating microstructure and mechanical properties of TiN coatings. With an increasing ICP power, the film microstructure evolves from an apparent columnar structure to a highly dense one. Grain sizes of TiN coatings decreased from 12.6 nm to 8.7 nm with an increase of the ICP power. A maximum nanohardness of 67.6 GPa was obtained for the coatings deposited at an ICP power of 300 W. The crystal structure and preferred orientation in the TiN coatings also varied with the ICP power, exerting an effective influence on film nanohardness.

Spark Plasma Sintering and Hot Pressing Sintering of Nanocrystalline WC-$10C_o$-0.8VC

  • Zhu, Li Hui;Shao, Guang Jie;Liu, Yi Xiong;Siddle, Dave
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09b
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    • pp.894-895
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    • 2006
  • WC-$10C_o$-0.8VC nanocrystalline powders were sintered by spark plasma sintering (SPS) and hot press sintering (HPS), and the microstructure and properties were compared. Results show that dense WC-$10C_o$-0.8VC can be obtained by SPS in several minutes when the sintering temperature is $>1200^{\circ}C$. Sintered at a temperature of $1300^{\circ}C$ the sample prepared by SPS for 3 minutes has higher density, finer grains and better properties than that prepared by HPS for 60 minutes. SPS can be used to prepare nanocrystalline WC-$10C_o$-0.8VC with improved properties when suitable sintering parametesr are chosen.

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Effect of Electrolyte Composition on Corrosion Behavior of PEO Treated AZ91 Mg Alloy

  • Park, Kyeong Jin;Lee, Jae Ho
    • Corrosion Science and Technology
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    • v.8 no.6
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    • pp.227-231
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    • 2009
  • Mg and Mg alloys have been used for lots of applications, including automobile industry, aerospace, mobile phone and computer parts owing to low density. However, Mg and Mg alloys have a restricted application because of poor corrosion properties. Thus, improved surface treatments are required to produce protective films that protect the substrate from corrosive environments. Environmental friendly Plasma Electrolytic Oxidation (PEO) has been widely investigated on magnesium alloys. PEO process combines electrochemical oxidation with plasma treatment in the aqueous solution. In this study, AZ91 Mg alloys were treated by PEO process in controlling the current with PC condition and treated time, concentration of NaF, NaOH, and $Na_2SiO_3$. The surface morphology and phase composition were analyzed using SEM, EDS and XRD. The potentiodynamic polarization tests were carried out for the analysis of corrosion properties of specimen. Additionally, salt spray tests were carried out to examine and compare the corrosion properties of the PEO treated Mg alloys.

Magnetonic Resistance Properties of Semiconductor Thin Films by Plasmon Effect on Fabricated Si(100) Substrate (플라즈몬 효과에 의한 실리콘 기판위에 증착된 반도체 박막의 자기저항특성)

  • Oh, Teresa
    • Journal of the Semiconductor & Display Technology
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    • v.18 no.3
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    • pp.105-109
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    • 2019
  • Plasmons have conductive properties using the effect of amplifying magnetic and electric fields around metal particles. The collective movement of free electrons in metal particles induces and produces the generation of plasmon. Because the plasmon is concentrated on the surface of the nanoparticles, it is also called the surface plasmon. The polarizing effect of plasma on the surface is similar to the principle of surface currents occurring in insulators. In this study, it was found the conditions under which plasma is produced in SiOC insulators and studied the electrical properties of SiOC insulators that are improved in conductivity by plasmons. Due to the heat treatment temperature of thin film, plasma formation was shown differently, metal particles were used with normal aluminium, SiOC thin films were treated with heat at 60 degrees, conductivity was improved dramatically, and heat treatment at higher temperatures was found to be less conductivity.

E-H Mode Transition Properties of Cylindrical ICP Hg:Kr

  • Yang Jong-Kyung;Pack Kwang-Hyun;Lee Jong-Chan;Park Dae-Hee
    • KIEE International Transactions on Electrophysics and Applications
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    • v.5C no.3
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    • pp.124-130
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    • 2005
  • In this paper, we designed a cylindrical type light source having an electromagnetic principle of inductively coupled plasma, and measured its electrical-optical properties. Using the transformer principle, an electrically equivalent circuit cylindrical type light source was analyzed. According to the parameters of electromagnetic induction, which were diameter of coil with cpO.3$\~$ 1.2mm, number of turns with 4$\~$ 12 turns, distance with 40$\~$ l20mm and RF power with 10$\~$ 150W, the electrical .md optical properties were measured. When the diameter of the coil was cp0.3mm, number of turns was 8 and distance was 40mm, and the maximum brightness of 29,730 cd/m$^{2}$ was shown with RF power l50W. The relationship between electromagnetic induction and plasma discharges was demonstrated using the mode transition from E-mode to H-mode

Effect of the Neutral Beam Energy on Low Temperature Silicon Oxide Thin Film Grown by Neutral Beam Assisted Chemical Vapor Deposition

  • So, Hyun-Wook;Lee, Dong-Hyeok;Jang, Jin-Nyoung;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.253-253
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    • 2012
  • Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

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Disinfective Properties and Ozone Concentrations in Water and Air from an Ozone Generator and a Low-temperature Dielectric Barrier Discharge Plasma Generator (오존발생기와 저온 유전체장벽 플라즈마를 이용한 오존 발생 및 살균력)

  • Lee, Young Sik;Jeon, Hyoung-Joo;Han, Hyung-Gyun;Cheong, Cheong-Jo
    • Journal of Environmental Science International
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    • v.22 no.8
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    • pp.937-944
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    • 2013
  • Ozone concentrations in water and air, and resulting disinfective properties, were measured following generation by either an ozone generator or a low-temperature dielectric barrier discharge plasma generator. In freshwater, ozone concentrations of 0.81 and 0.48 mg/L $O_3$ were observed after the ozone and plasma generators had been operated for five minutes, respectively. Higher levels of dissolved $O_3$ were attained more easily with the ozone generator. In seawater, both systems were capable of creating concentrations greater than 3.00 mg/L $O_3$ after 5minutes of operation. Higher ozone levels were attained more easily in seawater than in freshwater. Rates of bacterial sterilization in seawater after three minutes were 96% and 88%, using the plasma and ozone generators, respectively. In freshwater, higher concentrations of ozone were released into the atmosphere by the ozone generator than by the plasma generator. In creating equivalent levels of dissolved ozone in freshwater, the plasma generator released 4.5 times more ozone into the atmosphere than did the ozone generator. This shows that ozone generators are more effective than plasma generators for creating ozonated water. For the same concentration of dissolved ozone in seawater, more ozone was released into the atmosphere using the ozone generator than using the plasma generator. Therefore, with regard to air pollution, plasma generators seem to be less expensive than ozone generators.

Optical Properties for Plasma Polymerization Thin Films Using Envelope Method By Spectrophotometry (ENVELOPE METHOD를 이용한 플라즈마 중합 유기박막의 광학특성)

  • Yoo, D.C.;Park, G.B.;Lee, D.C.;HwqangBo, C.K.;Jin, K.H.
    • Proceedings of the KIEE Conference
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    • 1991.07a
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    • pp.183-186
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    • 1991
  • In order to prepare the functional organic optic meterials, the capacitive coupled gas flow type plasma polymerization apparatus was designed and manufactured. Styrene and para-Xylene monomer were adopt as organic materisl. Optical constant, refrative index, extinction coefficient of organic thin films by the gas flow type plasma polymerization appratus were determined by envelope method using spectrophotometry. The refractive index of plasma polymerized thin films was decreased in accordance to increase of wave length and discharge time. The extinction coefficient was very small compared with refractive index. From the experimental result of optical constant and film thickness, it was considered that the films which had required optical properties and thickness can be prepared by control of polymerization condition.

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The Study on Emission Spectrum Characteristics of Atmosphere Pressure Plasma (상압 플라즈마의 광 방출 스펙트럼 특성조사에 관한 연구)

  • Park, Sung-Jin
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.27 no.2
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    • pp.77-83
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    • 2013
  • In this study, we aimed to determine the optical properties of the plasma used for the dry cleaning method. The optical properties of the atmospheric pressure plasma device were measured through the degree of ionization of hydrogen or nitrogen gas by ionized atmospheric gas. The degree of ionization of hydrogen or nitrogen is closely associated with surface modification. We observed through our experiments that argon gas, an atmospheric gas, caused an increase in the ionization of nitrogen gas, which has similar ionization energy. This type of increase in nitrogen gas ions is believed to affect surface modification. The results of our study show that the pressure of argon gas and the partial pressure of argon and nitrogen gases lead to different results. This important result shows that argon ions can affect the ionization of nitrogen gas.

Improvement Study on Vertical Growth of Carbon Nanotubes and their Field Emission Properties at ICPCVD (유도결합형 플라즈마 화학기상증착법에서 탄소나노튜브의 수직성장과 전계방출 특성 향상 연구)

  • 김광식;류호진;장건익
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.8
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    • pp.713-719
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    • 2002
  • In this study, the vertically well-aligned CNTs were synthesized by DC bias-assisted inductively coupled plasma hot-filament chemical vapor deposition (ICPHFCVD) using radio-frequence plasma of high density and that CNTs were vertically grown on Ni(300 )/Cr(200 )-deposited glass substrates at 58$0^{\circ}C$. This system(ICPHFCVD) added to tungsten filament in order to get thermal decompound and DC bias in order to vertically grow to general Inductively Coupled Plasma CVD. The grown CNTs by ICPHFCVD were developed to higher graphitization and fewer field emission properties than those by general ICPCVD. In this system, DC bias was effect of vortical alignment to growing CNTs. The measured turn-on fields of field emission property by general ICPCVD and DC bias-assisted ICPHFCVD were 5 V/${\mu}{\textrm}{m}$ and 3 V/${\mu}{\textrm}{m}$, respectively.