• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.210.2-210.2
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• 2016

An inductively coupled plasma source was prepared for the deposition of a-C:H thin film. Properties of the inductively coupled plasma source are investigated by fluid simulation including Navier-Stokes equations and home-made tuned single Langmuir probe. Signal attenuation ratios of the Langmuir probe harmonic frequency were 13.56Mhz and 27.12Mhz. Dependencies of plasma parameters on process parameters were accord with simulation results. Ar/CH4 plasma simulation results shown that hydrocarbon radical densities have their lowest value at the vicinity of gas feeding line due to high flow velocity. For input power density of 0.07W/cm3, CH radical density qualitatively follows electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density. The result suggest that optimization of discharge power is important for controlling deposition film quality in high density plasma sources.

• 한국재료학회지
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• 제13권5호
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• pp.338-342
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• 2003

Adhesion between Cu and low-k films has been investigated. Low-k films deposited using a mixture of hexamethyldisilane(HMDS) and Para-xylene had a dielectric constant as low as 2.7, showing the thermally stable properties up to $400^{\circ}C$. In this study, Ti glue layer, boron dopant, and $N_2$plasma treatment were used to improve adhesion property of between Cu and low-k films. Ti glue layer slightly improved adhesion property. After $N_2$plasma treatment, the adhesion property was significantly improved due to the increased roughness and the formation of new binding states between Ti and plasma-treated PPpX : HMDS. However, $300^{\circ}C$ annealing of $N_2$plasma treated sample caused the diffusion of Cu into the PPpX : HMDS, degrading the low-k properties. In the case of Cu(B)/Ti/PPpX : HMDS, the adhesion was remarkably increased. This enhanced adhesion was attributed to formation of Ti-boride at the Cu-Ti interface. It is because the formed Ti-boride prevented the diffusion of Cu into the PPpX : HMDS and the Cu-Ti reaction at the Ti interface.

• 전기학회논문지
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• 제65권1호
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• pp.73-80
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• 2016

The preliminary test for the dual mode plasma torch system was carried out to explore the operation properties in advance. The dual mode plasma torch system that is able to operate in transferred, non-transferred, or dual mode is very adequate for melting the mixed wastes including nonconductive materials such as concrete, asbestos, etc. since it exploits both the high efficiency of heat transfer to the melt in transferred mode and stable operation in non-transferred mode. Also, system operation including restarting is reliable and very easy. A stationary melter with a refractory structure was designed and manufactured considering the melting behavior of slags to minimize the refractory erosion. The power supply for the dual mode plasma torch system built with high power insulated gate bipolar transistor (IGBT) modules has functions for both current control and voltage control and is sufficient to suppress the harmonics during the operation of the plasma torch. The power supply provides two different voltages for transferred operation and non-transferred. It is confirmed that the operation voltage in transferred is always higher than non-transferred. The dual mode plasma torch system was successfully developed and is under operation for a melting experiment to optimize operation data.

• 한국표면공학회지
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• 제37권6호
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• pp.313-318
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• 2004

Vertically-aligned and uniformly-distributed CuO nanowires were formed on copper-coated Si substrates by wet chemical process, immersing them in a hot alkaline solution. The effects of hydrogen plasma treatment on the field emission characteristics of CuO nanowires were investigated. It was found that hydrogen plasma treatment enhanced the field emission properties of CuO nanowires by showing a decrease in turn-on voltage, and an increase in emission current density, and stability of current-voltage curves. However, the excessive hydrogen plasma treatment made the I-V curves unstable. It was confirmed by XPS (X-ray Photoelectron Spectroscopy) analysis that hydrogen plasma treatment deoxidized CuO nanowires, thereby the work function of the nanowires decreased from 4.35 eV (CuO) to 4.1 eV (Cu). It is thought that the decrease in the work function enhanced the field emission characteristics. It is well-known that the lower the work function, the better the field emission characteristics. The results suggest that the hydrogen plasma treatment is very effective in achieving enhanced field emission properties of the CuO nanowires, and there may exist an optimal hydrogen plasma treatment condition.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.153-153
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• 2012

Endpoint detection with plasma impedance monitoring and self-plasma optical emission spectroscopy is demonstrated for dielectric layers etching processes. For in-situ detecting endpoint, optical-emission spectroscopy (OES) is used for in-situ endpoint detection for plasma etching. However, the sensitivity of OES is decreased if polymer is deposited on viewport or the proportion of exposed area on the wafer is too small. To overcome these problems, the endpoint was determined by impedance signal variation from I-V monitoring (VI probe) and self-plasma optical emission spectroscopy. In addition, modified principal component analysis was applied to enhance sensitivity for small area etching. As a result, the sensitivity of this method is increased about twice better than that of OES. From plasma impedance monitoring and self-plasma optical emission spectroscopy, properties of plasma and chamber are analyzed, and real-time endpoint detection is achieved.

• 한국재료학회지
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• 제12권10호
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• pp.776-783
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• 2002

Austenitic stainless steel (STS304) has been carburized using glow discharge plasma and its microstructure, wear resistance and corrosion property have been investigated. A repeat boost-diffuse carburizing was used as an effective plasma carburizing method. The effective case depth of the plasma carburized specimens was increased with the carbon concentration at the surface area. The specimens prepared by 3 hours plasma carburizing under $600^{\circ}C$ did not have the standard hardness for the effective case depth, but the specimen prepared by 11 hours plasma carburizing at $500^{\circ}C$ had nearly the same hardness with the specimen plasma carburized for 3 hours at $800^{\circ}C$. The wear resistance increased with temperature but the corrosion properties of the specimens prepared over $600^{\circ}C$ decreased rapidly due to the grain boundary sensitization. However, the specimen plasma carburized for 11 hours at $500^{\circ}C$ had nearly the same wear resistance with the specimen plasma carburized for 3 hours at $800^{\circ}C$ without deterioration of corrosion property. This could be resulted from the fact that the microstructure of the specimen plasma carburized for 11 hours at $500^{\circ}C$ was composed of martensite and austenite, because a partial martensite transformation was occurred only in the specimen plasma carburized for 11 hours at 50$0^{\circ}C$.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2000년도 추계학술발표회 초록집
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• pp.23-24
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• 2000

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2001년도 추계학술발표회 초록집
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• pp.35-35
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• 2001

agnesium Oxide (MgO) with a NaCI structure is well known to exhibit high secondary electron emission, excellent high temperature chemical stability, high thermal conductance and electrical insulating properties. For these reason MgO films have been widely used for a buffer layer of high $T_c$ superconducting and a protective layer for AC-plasma display panels to improve discharge characteristics and panel lifetime. Up to now MgO films have been synthesized by lE-beam evaporation, Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD), however there have been some limitations such as low film density and micro-cracks in films. Therefore magnetron sputtering process were emerged as predominant method to synthesis high density MgO films. In previous works, we designed and manufactured unbalanced magnetron source with high power density for the deposition of high quality MgO films. The magnetron discharges were sustained at the pressure of O.lmtorr with power density of $110W/\textrm{cm}^2$ and the maximum deposition rate was measured at $2.8\mu\textrm{m}/min$ for Cu films. In this study, the syntheses of MgO films were carried out by unbalanced magnetron sputtering with various $O_2$ partial pressure and specially target power densities, duty cycles and frequency using pulsed DC power supply. And also we investigated the plasma states with various $O_2$ partial pressure and pulsed DC conditions by Optical Emission Spectroscopy (OES). In order to confirm the relationships between plasma states and film properties such as microstructure and secondary electron emission coefficient were analyzed by X-Ray Diffraction(XRD), Transmission Electron Microscopy(TEM) and ${\gamma}-Focused$ Ion Beam (${\gamma}-FIB$).

• 한국재료학회지
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• 제22권4호
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• pp.211-214
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• 2012

Optimal conditions for HA plasma spray-coating on Ti6Al4V alloy were investigated in order to obtain enhanced bone-bonding ability with Ti6Al4V alloy. The properties of plasma spray coated film were analyzed by SEM, XRD, surface roughness measurement, and adhesion strength test because the film's transformed phase and crystallinity were known to be influential to bone-bonding ability withTi6Al4V alloy. The films were formed by a plasma spray coating technique with various combinations of plasma power, spray distance, and auxiliary He gas pressure. The film properties were analyzed in order to determine the optimal spray coating parameters with which we will able to achieve enhanced bone-bonding ability with Ti6Al4V alloy. The most influential coating parameter was found to be the plasma spray distance to the specimen from the spray gun nozzle. Additionally, it was observed that a relatively higher film crystallinity can be obtained with lower auxiliary gas pressure. Moderate adhesion strength can be achievable at minimal plasma power. That is, adhesion strength is minimally dependent on the plasma power. The combination of shorter spray distance, lower auxiliary gas pressure, and moderate spray power can be recommended as the optimal spray conditions. In this study, optimal plasma spray coated films were formed with spray distance of 70 mm, plasma current of 800 A, and auxiliary gas pressure of 60 psi.

• 폴리머
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• 제30권5호
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• pp.391-396
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• 2006

플라스마 표면처리는 접착력, 친수성, 소수성 등과 같은 고분자의 표면 특성을 개질시키기 위하여 사용되고 있다. 플라스마를 이용하여 표면을 처리하게 되면 고분자의 전체적인 물성은 유지한 채 표면의 특성만을 변화시키는 장점을 가지고 있다. 본 연구에서는 다양한 가스를 사용한 플라스마를 이용하여 상업용 Polyarlide66 (PA66) /polyphenylene(PPE) 고분자의 표면의 접착력 향상을 위해 표면 유기물 제거와 친수성으로 개질을 시도하였다. 플라스마 처리 공정 변수인 공정 파워, 처리 시간, 가스 종 들을 변화시키면서 표면을 개질하였으며 PASS/ PPE 고분자의 친수성 개질을 확인하기 위하여 접촉각 및 표면 자유에너지 변화를 측정하였다. 또한 유기물 제거를 FTIR 분석을 통하여 확인하였다. 플라스마를 이용한 표면처리 결과, 공정 파워 100 W, 처리 시간 2분, 아르곤/산소 공정가스에서 가장 낮은 접촉각(73도에서 14도)과 가장 높은 표면 자유에너지 ($44.20 mJ/m^2$에서 $50.03 mJ/m^2$)를 나타내었다.