• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.250-250
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• 2009

Thin film of $SnO_2$ was fabricated from plasma enhanced atomic layer deposition technology with bubbler type injector system by using TEMASn (tetrakisethylmethylamino tin) precursor. Mostly crystalline of $SnO_2$ films can be obtained with oxygen plasma and with water at relatively low temperature of $150^{\circ}C$. $SnO_2$ was deposited as an uniform rate of $1.0A^{\circ}$/cycle. In order to obtain uniform film, a seed oxide material was used before TEMASn deposition in ALD process. The process parameters were controlled to obtain dense thin film by atomic deposition methodology. The morphology and characterization of thin film with optimized process condition will be discussed.

• Analytical Science and Technology
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• v.11 no.1
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• pp.36-41
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• 1998

A gas chromatography-mass spectrometry method for the determination of 5-fluorourasil in human plasma is described. The method involves a single extraction procedure with 10 ml of isopropanol-ether(20:80) solution and pentafluoro-benzylation. Samples were injected using an automatic injector, followed by separation on a nonpolar capillary column and detection with a mass selective detector(MSD). No endogeneous compounds were found to interfere. The detection limit, based upon an assayed plasma volume of 0.5, was 3 ng/ml. The extraction yield was found to be above 80%. Plasma 5-FU concentrations were determined by this method in about 500 plasma samples from cancer patients undergoing treatment with 5-FU. This method is suitable for monitoring of 5-FU in plasma of cancer patients.

• Proceedings of the Korean Nuclear Society Conference
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• 2004.10a
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• pp.719-720
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• 2004

A multi-megawatt long pulse ion source (LPIS) of neutral beam injector was developed for the KSTAR. Beam extraction experiments of the LPIS were carried out at the neutral beam test stand (NBTS). Design requirements for the ion source were 120 kV/65 A deuterium beam and a 300 s pulse length. A maximum ion density of $9.1310^{11}$ $cm^{-3}$ was measured by using electric probes, and an optimum arc efficiency of 0.46 A/kW was estimated with ion saturation current of the probes, arc power, and total beam area. An arcing problem, caused by the structural defect of decelerating grid supporter, in the third gap was solved by the blocking of backstream ion particles, originated from the plasma in the neutralizer duct, through the unnecessary spaces on the side of grid supporter. A maximum drain power of 1.5 MW (i.e. 70 kV/21 A) with hydrogen was measured for a pulse duration of 0.5 s. Optimum beam perveance was ranged from 0.75 to 0.85. An improved design of accelerator for the effective control of beam particle trajectory should provide higher beam perveance.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.240-240
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• 2011

The first neutral beam injector (NBI-1) has been developed for the Korea Superconducting Tokamak Advanced Research (KSTAR) tokamak. A first long pulse ion source (LPIS-1) has been installed on the NBI-1 for an auxiliary heating and current drive of KSTAR core plasmas. Performance of ion and neutral beam extractions in the LPIS-1 was investigated initially on the KSTAR NBI-1 system, prior to the neutral beam injection into the main plasmas. The ion source consists of a JAEA magnetic bucket plasma generator with multi-pole cusp fields and a set of KAERI prototype-III tetrode accelerators with circular apertures. The inner volume of plasma generator and accelerator column in the LPIS-1 is approximately 123 liters. Final design requirements for the ion source were a 120 kV/ 65 A deuterium beam and a 300 s pulse length. The extraction of ion beams was initiated by the formation of arc plasmas in the LPIS-1, called as an arc-beam extraction method. A stable ion beam extraction of LPIS-1 has been achieved up to an 100 kV/42 A for a 4 s pulse length and an 80 kV/25 A for a 14 s pulse length. Optimum beam perveance of 1.21 microperv has been found at an accelerating voltage of 80 kV. Neutralization efficiency has been measured by using a water flow calorimetry (WFC) method of calorimeter and an operation of bending magnet. The full-energy species of ion beams have been detected by using the diagnostic method of optical multichannel analyzer (OMA). An arc efficiency of the LPIS was 0.6~1.1 A/kW depending on the operating conditions of arc discharge.

• Journal of Pharmaceutical Investigation
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• v.22 no.3
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• pp.197-204
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• 1992

A gas chromatographic method using nitrogen phosphorous selective detection was developed for simultaneous determination of haloperidol and its metabolite, reduced haloperidol, in human plasma. Combelen was used as internal standard, The method involved extraction and trimethylsilylation followed by the injection of $2-4\;{\mu}l$ of benzene layer, which was used to dissolve the trimethylsilylated derivatives of haloperidol and reduced haloperidol, onto SE-54 column [5% phenyl methyl silica fused capillary column, $16m{\times}0.22\;mm$ $(I.D.){\times}0.33\;{\mu}m$ (coated thickness)]. The temperature of column oven was programmed from $200^{\circ}C\;to\;300^{\circ}C$ at the increase rate of $10^{\circ}C/min and also the temperatures of injector and detector were set at $300^{\circ}C$. Helium was used as carrier gas and its flow rate was maintained at 30 ml/min. The detection was conducted with nitrogen phosphorous selective detector. The retention times for combelen, reduced haloperidol and haloperidol were found to be 9.14, 9.75 and 9.99 min, respectively. The detection limits for haloperidol and reduced haloperidol in human plasma were both 0.2 ng/ml. The coefficients of variation of the intra-assay were generally low (below 9.8%). The mean absolute recoveries of added haloperidol and reduced haloperidol from plasma were 72% and 84%, respectively. No interferences from endogenous substances were found.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• Journal of Korean Society of Environmental Engineers
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• v.37 no.8
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• pp.492-497
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• 2015

VOCs (Volatile Organic Compounds) are generally generated in the painting process, or at the company and laundry where use organic solvents. The VOCs consist of various hydrocarbons and has low calorific value due to its dilution with atmospheric air. Therefore, the VOCs are difficult to burn by a conventional fuel combustor. In this study, a novel plasma dump combustor was proposed for the treatment of low calorific VOC gases. This combustor was designed a combination of the characteristics in a plasma burner, a dump combustor and a 3D matrix burner. The combustor has good structure for maintaining enough residence time and reaction temperature for stable flame formation and VOC destruction. For investigating the performance characteristics of the plasma dump combustor, an experiment was achieved for VOC feed rate, VOC injector position, etc. Toluene was used as a surrogate of VOC. The novel combustor gave better performance than a conventional combustor, showing that VOC destruction rate and energy efficiency were 89.64% and 12.27 kg/kWh respectively, at feeding rate of 450 L/min of VOC of 3,000 ppm of toluene concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.368-368
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• 2008

Ion implantation has been widely developed during the past decades to become a standard industrial tool. To comply with the growing needs in ion implantation, innovative technology for the control of ion beam parameters is required. Beam current, beam profile, ion fractions are of great interest when uniformity of the implant is an issue. Especially, it is important to measure the spatial distribution of beam power and also the energy distribution of accelerated ions. This energy distribution is influenced by the proportion of mass for ion in the plasma generator(ion source) and by charge exchange and dissociation within the accelerator structure and also by possible collective effects in the neutralizer which may affect the energy and divergence of ions. Hydrogen atom has been the object of a good study to investigate the energy distribution. Hydrogen ion sources typically produce multi-momentum beams consisting of atomic ion ($H^+$) and molecular ion ($H_2^+$ and $H_3^+$). In the beam injector, the molecular ions pass through a charge-exchanges gas cell and break up into atomic with one-half (from $H_2^+$) or one-third (from $H_3^+$) according to their accelerated energy. Burrell et al. have observed the Doppler shifted lines from incident $H^+$, $H_2^+$, and $H_3^+$ using a Doppler shift spectroscopy. Several authors have measured the proportion of mass for hydrogen ion and deuterium using an ion source equipped with a magnetic dipole filter. We developed an ion implanter with 50-KeV and 20-mA ion source and 100-keV accelerator tube, aiming at commercial uses. In order to measure the proportion of mass for ions, we designed a filter system which can be used to measure the ion fraction in any type of ion source. The hydrogen and helium ion species compositions are used a filter system with the two magnets configurations.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.378-383
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• 2007

As the Minimally Invasive Surgery (MIS) is developed, an interventional procedure becomes the major of the spine surgery in the world. Despite of the use of the expensive medical equipments, the success chance of the nucleoplasty is about 30%. The reason is that the shape of the cannular needle is similar to that of the conventional injector and looks like the straight. Because the tip of these straight needles is not able to reach in the vicinity of the disc bulging or the protrusion, which are the cause of the low back pain and because the far indirect plasma discharge results in the decompression, the nucleoplasty has the limit. Many incurable diseases has not been solved due to the unexistence of the advanced technique for the MIS human body cannula device. If 3-D direction controllable cannular catheter (whose direction is accurately controlled after inserting into the bodies to cure the lesion) is developed, it is expected that new devised cannular catheter can cure many incurable diseases simultaneously. Therefore, the aims of this research are to develop the new devised cannular catheter of SMA direction controller for the medical situation, which has been produced through many previous trial-error procedures, and to produce the commercial medical device.