• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1195-1198
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• 2005

The improvement of efficiency is the one of the most important part in AC PDPs . To achieve high efficiency, high VUV emission efficiency and High ion induces secondary electron emission coefficient are needed. We have measured the emission spectra of vacuum ultraviolet rays and ion induced secondary electron emission coefficient of MgO protective layer in surface discharge AC-PDP with binary and ternary gas mixtures. We have investigated electro-optical characteristics of AC-PDPs to optimum gas mixture for high efficient.

• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.20-24
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• 1998

Thin films of diamond-like carbon(DLC) can be successfully deposited by using a magnetron plasma chemical vapor deposition (CVD) method with an rf(13.56 MHz) plasma of $C_dH_8$. Plasma characteristics are analyzed as a function of the magnetic field. As the magnetic field increases, both electron temperature ($T_e$) and density ($n_e$)increase, but the negative dc self-bias voltage (-$V_{ab}$) decreases, irrespective of gas pressures in the range of 1~7 mTorr. High deposition rates have been obtained even at low gas pressures, which may be attributed to the increased mean free path of electrons in the magentron plasma. Effects of rf power and additive gas on the structural properties of DLC films aer also examined by using various technique namely, TED(transmissio electron diffraction) microanalysis, FTIR, and Raman spectroscopies.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.4
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• pp.84-91
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• 1994

A compact electron cyclotron resonance(ECR) plasma system composed of a microwave generator and a magnet coil was fabricated. A Langmuir single probe was used to investigate the plasma characteristics of the system through I-V measurements. The performance of the compact ECR plasma system was tested for the case of silicon etching reaction with $CF_{4}/O_{2}$(30%) mixed gas. Electron density and etch rate increased to maximum values and then decreased with increasing argon gas pressure, but electron temperature changed in the opposite way. The electron density and the electron temperature of argon gas plasma were 0.85${\times}~5.5{\times}10^{10}cm^{-3}$ and 4.5~6.0 eV, respectively, in the pressure range from $3{\times}10^{4}$ to 0.05Torr. The etch rate reached a maximum value at the position of 2.5cm from the bottom of plasma cavity. Etch rate uniformity was $\pm$6% across 6cm wafer. Anisotropic index was 0.75 at 1.5${\times}10^{-4}$Torr.

• Applied Science and Convergence Technology
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• v.23 no.1
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• pp.44-47
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• 2014

In this study, we investigated the basic properties of N-doped ethylcyclohexene plasma polymer thin films that deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition (PECVD) method with controlled ammonia flow rate. Ethylcyclohexene was used as organic precursor with hydrogen gas as the precursor bubbler gas. Additionally, ammonia ($NH_3$) gas was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, UV-Visible spectroscopy, and water contact angle measurement. We found that with increasing plasma power, film thickness is gradually increased while optical transmittance is drastically decreased. However, under the same plasma condition, water contact angle is decreased with increasing $NH_3$ flow rate. The FT-IR spectra showed that the N-doped ethylcyclohexene plasma polymer films were completely fragmented and polymerized from ethylcyclohexane.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2005.11b
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• pp.300-315
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• 2005

Recently plasma surface-cleaning or surface-etching techniques have been focused in the respect of decontamination of spent or used nuclear parts and equipment. In this study decontamination rate of metallic cobalt surface was experimentally investigated via its surface etching rate with a $CF_4-O_2$ mixed gas plasma and metallic surface wastes of cobalt oxides were simulated and decontaminated with $NF_3$ - Ar mixed gas plasma. Experimental results revealed that a mixed etchant gas with about $80{\%}\;CF_4-20{\%}\;O_2$ gives the highest reaction rate of cobalt disk and the rate reaches with a negative 300 DC bias voltage up to $0.43\;{\mu}m$/min at $380^{\circ}C$ and $20{\%}\;NF_3-80\%$ Ar mixed gas gives $0.2\;{\mu}m$/min of reaction rate of cobalt oxide film.

• Journal of Korean Society for Atmospheric Environment
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• v.9 no.E
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• pp.382-389
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• 1993

An evaluation of a plasma reactor was conducted to investigate its potential as a feasible and economical off-gas control technology for an air stripping tower (AST). The plasma reactor was powered by an alternating current with frequencies up to 1000Hz. The study showed that over 90% conversion of gas-phase trichloroethylene (TCE) can be achieved. An optimum frequency for the laternating current existed for maximum power input. The optimum frequency was dependent on the reactor geometry and the primary voltage applied. for a fixed geometry, a plasma reactor has a limited capacity for flow rate. Even though it is a feasible process to control off-gases, further investigations should be conducted to develop a more economic process.

• Elastomers and Composites
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• v.47 no.4
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• pp.310-317
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• 2012

A jute fiber surface was modified with argon gas in a cylinder type RF plasma generator to enhance the interfacial bond strength and to optimize the plasma treatment condition. The plasma power, gas pressure, and treat time were varied to figure out any effect of those parameters on the morphology and mechanical strength of jute fibers, and the interfacial bond strength for a model composite with polypropylene resin. As the severity of plasma treatment was increased, the surface of jute fibers became rougher. Gas pressure was less effective in roughening of the surface compared with those of treat time and plasma power. Approximately 25% drop in tensile strength of jute fibers was observed for the parameters of treat time and plasma power, while little deterioration was found for gas pressure, with increasing the severity. Based on the interfacial shear strength (IFSS), the optimum plasma treatment condition was determined to be treat time of 30 s, plasma power of 40 W, and gas pressure of 30 mTorr.

• Transactions of the Korean hydrogen and new energy society
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• v.34 no.1
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• pp.8-16
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• 2023

In this work, we report basic performance test results of a lab-scale three phase alternative current (AC) arc plasma torch system for plasma gas reforming applications. The suggested system primarily consists of three graphite electrodes inclined at 12.5° to the central axis, a 𝞥 150 mm cylindrical gas path and a three phase-60 Hz AC power supply. At air flow rate of 50 Lpm and arc currents of 100-175 A, test results revealed that plasma resistances were decreasing from 1.08 Ω to 0.53 Ω with the increase of plasma power from 9.3 kW to 13.8 kW, causing the decrease of power factor and increase of the line voltages. However, the injected air can be heated quickly up to the temperatures of >1,200℃ when injecting AC arc plasma powers of >10 kW.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1532-1535
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• 1996

Diamond-like carbon (DLC) films have been prepared by a widely-used plasma CVD with an rf (13.56MHz) plasma of $CH_4$ gas. The hydrogen incorporated in DLC films plays an important role of determining the film properties, but its exact role has not been clear. In this study, the effect of hydrogen on the film properties of DLC has been examined by adding the hydrogen gas to the $CH_4$ gas during deposition and by exposing the prepared film to the hydrogen plasma. As the content of additive hydrogen gas increases, the density and hardness of the film increase, but the growth rate decreases. The FT-IR spectroscopy results show that the number of C-H bonds decreases with increasing the hydrogen gas. Also, the variation in the position of "G" and "D" peaks due to additive hydrogen, which has been measured by the Raman spectroscopy, indicates of $sp^3$ fraction.

• Journal of Welding and Joining
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• v.25 no.4
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• pp.42-48
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• 2007

An inert gas atomized NiTiZrSiSn bulk metallic glass feedstock was sprayed onto the copper plate using vacuum plasma spraying process. In order to change the in-flight particle energy, that is, thermal energy, the hydrogen gas flow rate in plasma gas mixture was increased at the constant flow rate of argon gas. Coating and single pass spraying bead were produced with the least feeding rate. Regardless of the plasma gas composition, fully melted through unmelted particle could be observed on the overlay coating. However, the frequency of the unmelted particle number density was increased with the decrease of the hydrogen gas flow rate. The amorphous phase fraction within coating was also affected by the number density of the unmelted particle.