• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.743-747
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• 2003

The improvement of luminance and luminous efficiency is the one of the most important part in AC-PDPs. To achieve high luminance and luminous efficiency, high VUV emission efficiency is needed. We measured the emission spectra of vacuum ultraviolet(VUV) and infrared(IR) rays in surface discharge AC-PDP with Ne-Xe mixture gas. The influence of Ne-Xe gas-mixture ratio on resonance state $Xe^{\ast}(3P_{1})$ and exited state $Xe^{\ast}(3P_{2})$ has been investigated. It is found that the intensity of VUV 147nm emission is proportional to that of the IR 828 nm emission, and the VUV 173nm emission is roughly proportional to that of the IR 823nm emission. The electron temperature and plasma density have been experimentally measured from the center of sustaining electrode gap by a micro Langmuir probe in AC-PDPs. The plasma density from the center of sustaining electrode gap are shown to be maximum value of $9{\times}10^{11}cm^{-3}$, where the electron temperature is about 1.6 eV in this experiment

• Korean Journal of Materials Research
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• v.10 no.7
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• pp.505-514
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• 2000

The carburizing behavior and fatigue properties of the plasma carburized low carbon Cr-Mo steel(0.176C-1.014Cr-0.387Mo) have been investigated. The effective case depth in plasma carburized steel increased up to 50% in comparison with that of gas carburizing, and this case depth increased with the increasing surface carbon content. With increasing time in plasma carburizing, the surface carbon content increased but its increasing rate decreased. Fatigue properties were studied in terms of microstructure, case depth, retained austenite and residual stress near the surface. The fatigue limit of the plasma carburized steel was higher than that of gas carburized one. The initiation of microcracks and initial crack propagation were retarded due to a relatively little surface and internal oxidation layer in plasma carburized steel. Fractography showed the crack initiated at the surface, and transgranular fracture at surface layer was more predominant in plasma carburized steel compared to that of gas carburized steel.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.72-74
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• 2004

In this study, we used a inductively coupled plasma (ICP) source for etching $Al_2O_3$ thin films because of its high plasma density, low process pressure and easy control bias power. $Al_2O_3$ thin films were etched using $Cl_2/BCl_3$, $N_2/Cl_2/BCl_3$, and Ar/$Cl_2/BCl_3$ plasma. The experiments were carried out measuring the etch rates and the selectivities of $Al_2O_3$ to $SiO_2$ as a function of gas mixing ratio, rf power, and chamber pressure. When $Cl_2$ 50% was added to $Cl_2/BCl_3$ plasma, the etch rate of the $Al_2O_3$ films was 118 nm/min. We also investigated the effect of gas addition. In case of $N_2$ addition, the etch rate of the $Al_2O_3$ films decreased while $N_2$ was added into $Cl_2/BCl_3$ plasma. However, the etch rate increased slightly as Ar added into $Cl_2/BCl_3$ plasma, and then further increase of Ar decreased the etch rate. The maximum etch rate was 130 nm/min at Ar 20% in $Cl_2/BCl_3$ plasma, and the highest etch selectivity was 0.81 in $N_2$ 20% in $Cl_2/BCl_3$ plasma. And, we obtained the results that the etch rate increases as rf power increases and chamber pressure decreases. The characteristics of the plasmas were estimated using optical emission spectroscopy (OES).

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.6
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• pp.483-488
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• 1999

The optimal mixing condition of four components gas(Ne,Xe,He,Ar) in PDPs was caculated by a numerical simulation method. The dominated reactions in which $Xe^*(^3P_1)$ is produced and decays were investigated in three components gas (Ne,Xe,He) and our new components gas (Ne,Xe,He,Ar). A peak point of $Xe^*$ density appears in the range of 0.1% to 2% of Ar mixture ratio. The results of simulation show that the direct exitation of Xe by electrons has the greatest influence on the inceasing $Xe^*$ density in both gas mixtures.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.2232-2237
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• 2007

Steam reforming and catalytic reforming of $CH_4$ conversion to produce synthesis gas require both high temperatures and high pressure. Non-thermal plasma is considered to be a promising technology for the hydrogen rich gas production from methane. In this study, three phase AC GlidArc plasma system was employed to investigate the effects of gas composition, gas flow rate, catalyst reactor temperature and applied electric power on the $CH_4$ and $H_2$ yield and the product distribution. The studied system consisted of three electrode and it connected AC generate power system different voltages. In this study, air was used for the partial oxidation of methane. The results showed that increasing gas flow rate, catalyst reactor temperature, or electric power enhanced $CH_4$ conversion and $H_2$ concentration. The reference conditions were found at a $O_2$/C molar ratio of 0.45, a feed flow rate of 4.9 ${\ell}$/min, and input power of 1kW for the maximum conversions of $CH_4$ with a high selectivity of $H_2$ and a low reactor energy density.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.6
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• pp.451-455
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• 1999

The highest etch rate of Pt film was obtained at 10% $Cl_2$/90% Ar gas mixing ratio in our previous investigation. However, the problems such as the etch residues(fence) remained on the pattern sidewall, low selectivity to oxide as mask and low etch slope were presented. In this paper, the etching by additive $O_2$ gas to 10% $Cl_2$/90% Ar gas base was examined. As a result, the fence-free pattern and higher etch slope as about 60$^{\circ}$was observed and the selectivity to oxide increased to 2.4 without decreasing of the etch rate $1500{\AA}$/min. XPS surface analysis proved that a only little $O_2$ gas removes the Pt-CI compounds as residues on the etched surface.

• Journal of Radiation Protection and Research
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• v.25 no.2
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• pp.99-107
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• 2000

Through the results of off-gas analysis at 3 sampling points in Plasma Arc Melting vitrification pilot plant, it was evaluated the partitioning of spiked materials in off-gas and the decontamination characteristic of off-gas treatment system. Spiked materials are hazard_us heavy metals(Pb, Cd, Hg), radioactive surrogate(Co, Cs) and radioactive materials($^{60}Co,\;^{137}Cs$). Through the Trial burn tests, Decontamination factor of spiked materials in off-gas treatment system is calculated.

• Transactions of the Korean Society of Automotive Engineers
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• v.10 no.6
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• pp.65-71
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• 2002

Characteristics of corona discharge of the different types of the plasma reactors which are cone-hole and cone-plate is investigated experimentally. The discharge starts at lower voltage for the cathode corona than the anode corona and spark occurs at higher voltage for the cathode corona. And the cathode corona makes more stable discharge than the anode corona. The effect of the base gas in corona discharge for different O$_2$/N$_2$ concentrations is related with the gas molecular weight. The discharge for the smaller molecular weight gas occurs easier than for the high molecular weight gas. The discharge current decreases with the increase of oxygen concentration and it increases more sharply for anode corona than for cathode corona as discharge voltage increases after corona onset voltage. NO-NO$_2$ conversion increases with the energy density of corona discharge and the addition of O$_2$ in a base N$_2$ gas.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.233-233
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is a prominent candidate among prospective semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. The etching of MTJ stack with good properties is one of a key process for the realization of high density MRAM. In order to achieve high quality MTJ stack, the use of CoFeB and IrMn magnetic films as free layers was proposed. In this study, inductively coupled plasma reactive ion etching of CoFeB and IrMn thin films masked with Ti hard mask was investigated in a $Cl_2$/Ar gas mix. The etch rate of CoFeB and IrMn films were examined on varying $Cl_2$ gas concentration. As the $Cl_2$ gas increased, the etch rate monotonously decreased. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of CoFeB and IrMn thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of CoFeB and IrMn displayed better etch profiles. Finally, the clean and vertical etch sidewall of CoFeB and IrMn free layers can be achieved by means of thin Ti hard mask in a $Cl_2$/Ar plasma at the optimized condition.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.241-246
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• 2018

$TaN_x$ film is grown by plasma enhanced atomic layer deposition (PEALD) using t-butylimido tris(dimethylamido) tantalum as a metalorganic source with various reactive gas species, such as $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. Although the pulse sequence and duration are the same, aspects of the film growth rate, microstructure, crystallinity, and electrical resistivity are quite different according to the reactive gas. Crystallized and relatively conductive film with a higher growth rate is acquired using $NH_3$ as a reactive gas while amorphous and resistive film with a lower growth rate is achieved using $N_2+H_2$ mixed gas. To examine the relationship between the chemical properties and resistivity of the film, X-ray photoelectron spectroscopy (XPS) is conducted on the ALD-grown $TaN_x$ film with $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. For a comparison, reactive sputter-grown $TaN_x$ film with $N_2$ is also studied. The results reveal that ALD-grown $TaN_x$ films with $NH_3$ and $H_2$ include a metallic Ta-N bond, which results in the film's higher conductivity. Meanwhile, ALD-grown $TaN_x$ film with a $N_2+H_2$ mixed gas or sputtergrown $TaN_x$ film with $N_2$ gas mainly contains a semiconducting $Ta_3N_5$ bond. Such a different portion of Ta-N and $Ta_3N_5$ bond determins the resistivity of the film. Reaction mechanisms are considered by means of the chemistry of the Ta precursor and reactive gas species.